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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

SEEMS: A Single Event Effects and Muon Spectroscopy facility at the Spallation Neutron Source

This study outlines a concept that would leverage the existing proton accelerator at the Spallation Neutron Source (SNS) of Oak Ridge National Laboratory to enable transformative science via one world-class facility serving two missions: Single Event Effects (SEE) and Muon Spectroscopy (μSR). The μSR portion would deliver the world’s highest flux and highest resolution pulsed muon beams for material characterization purposes, with precision and capabilities well beyond comparable facilities. The SEE capabilities deliver neutron, proton, and muon beams for aerospace industries that are facing an impending challenge to certify equipment for safe and reliable behavior under bombardment from atmospheric radiation originating from cosmic and solar rays. With negligible impact on the primary neutron scattering mission of the SNS, the proposed facility will have enormous benefits for both science and industry. Herein, we have designated this facility “SEEMS.”

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Multiscale System Modeling of Single-Event-Induced Faults in Advanced Node Processors

Integration-technology feature shrink increases computing-system susceptibility to single-event effects (SEE). While modeling SEE faults will be critical, an integrated processor’s scope makes physically correct modeling computationally intractable. Without useful models, presilicon evaluation of fault-tolerance approaches becomes impossible. To incorporate accurate transistor-level effects at a system scope, we present a multiscale simulation framework. Charge collection at the 1) device level determines 2) circuit-level transient duration and state-upset likelihood. Circuit effects, in turn, impact 3) register-transfer-level architecture-state corruption visible at 4) the system level. Furthermore, the physically accurate effects of SEEs in large-scale systems, executed on a high-performance computing (HPC) simulator, could be used to drive cross-layer radiation hardening by design. We demonstrate the capabilities of this model with two case studies. First, we determine a D flip-flop’s sensitivity at the transistor level on 14-nm FinFet technology, validating the model against published cross sections. Second, we track and estimate faults in a microprocessor without interlocked pipelined stages (MIPS) processor for Adams 90% worst case environment in an isotropic space environment.

42 ENGINEERING↗
DOE OSTI2020

Report from the Inaugural Meeting on the Opportunities at the SEEMS Facility June 11-12, 2019

The Inaugural Meeting on the Opportunities at the Single Event Effects—Muon Spectroscopy (SEEMS) facility was held June 11–12, 2019, at Oak Ridge National Laboratory (ORNL). Capabilities of the SEEMS facility concept were reviewed, with emphasis on particle beams for single event effects (SEE) testing of electronic devices (integrated circuits) and systems—a topic of growing interest and concern in aerospace avionics, satellites, supercomputing, autonomous cars, unmanned aerial vehicles and more. Participants from these industries and their regulators attended. A clear consensus on the growing and urgent need for SEE test capabilities like those offered by SEEMS was expressed. Subsequent to the meeting, letters of support for SEEMS were sent by The Boeing Company and Honeywell to the ORNL Laboratory Director, Thomas Zacharia.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.

42 ENGINEERING↗
DOE OSTI2021

Reconfigurable Framework for Resilient Semantic Segmentation for Space Applications

Deep learning (DL) presents new opportunities for enabling spacecraft autonomy, onboard analysis, and intelligent applications for space missions. However, DL applications are computationally intensive and often infeasible to deploy on radiation-hardened (rad-hard) processors, which traditionally harness a fraction of the computational capability of their commercial-off-the-shelf counterparts. Commercial FPGAs and system-on-chips present numerous architectural advantages and provide the computation capabilities to enable onboard DL applications; however, these devices are highly susceptible to radiation-induced single-event effects (SEEs) that can degrade the dependability of DL applications. In this article, we propose Reconfigurable ConvNet (RECON), a reconfigurable acceleration framework for dependable, high-performance semantic segmentation for space applications. In RECON, we propose both selective and adaptive approaches to enable efficient SEE mitigation. In our selective approach, control-flow parts are selectively protected by triple-modular redundancy to minimize SEE-induced hangs, and in our adaptive approach, partial reconfiguration is used to adapt the mitigation of dataflow parts in response to a dynamic radiation environment. Combined, both approaches enable RECON to maximize system performability subject to mission availability constraints. We perform fault injection and neutron irradiation to observe the susceptibility of RECON and use dependability modeling to evaluate RECON in various orbital case studies to demonstrate a 1.5–3.0× performability improvement in both performance and energy efficiency compared to static approaches.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Measurements of Single Event Upset in ATLAS IBL

Effects of Single Event Upsets (SEU) and Single Event Transients (SET) are studied in the FE-I4B chip of the innermost layer of the ATLAS pixel system. SEU/SET affect the FE-I4B Global Registers as well as the settings for the individual pixels, causing, among other things, occupancy losses, drops in the low voltage currents, noisy pixels, and silent pixels. Quantitative data analysis and simulations indicate that SET dominate over SEU on the load line of the memory. Operational issues and mitigation techniques are presented.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full potential, leading to single-event effects (SEEs) at lower bias voltages under heavy ion radiation. Here, in this work, we report on the performance of homojunction GaN vertical PiN diodes with a hybrid edge termination design under heavy ion irradiation, specifically, oxygen ions, chlorine ions, Cf-252 fission fragments, and alpha particles from an Am-241 source. The unique hybrid edge termination (HET) design provides better electric field management, preventing breakdown from occurring at the edge of the anode at lower voltages. The results of this study reveal that these devices exhibit excellent tolerance to 12-MeV oxygen and 16-MeV chlorine ions, owing to their low linear energy transfer (LET) and range in GaN. However, single-event burnout (SEB) is observed during the Cf-252 exposure at about 50% of the diodes' electrical breakdown voltage due to the presence of higher LET and longer-range ions. Optical and scanning electron microscopy (SEM) reveal that the damage that caused by SEB lies close to the center of these devices rather than the anode edge. Devices with junction termination extension (JTE) instead of HET edge termination also show similar SEB when irradiated with Cf-252 fission fragments. Physical damage due to SEB occurs at the edge of the anode for these devices. These comparative results show the benefits of HET for enhancing the resistance of GaN-based PiN diodes to heavy ion irradiation.

42 ENGINEERING↗
DOE OSTI2023

Soft error-mitigating semiconductor design system and associated methods

A soft error-mitigating semiconductor design system and associated methods that tailor circuit design steps to mitigate corruption of data in storage elements (e.g., flip flops) due to Single Events Effects (SEEs). Required storage elements are automatically mapped to triplicated redundant nodes controlled by a voting element that enforces majority-voting logic for fault-free output (i.e., Triple Modular Redundancy (TMR)). Storage elements are also optimally positioned for placement in keeping with SEE-tolerant spacing constraints. Additionally, clock delay insertion (employing either a single global clock or clock triplication) in the TMR specification may introduce useful skew that protects against glitch propagation through the designed device. The resultant layout generated from the TMR configuration may relax constraints imposed on register transfer level (RTL) engineers to make rad-hard designs, as automation introduces TMR storage registers, memory element spacing, and clock delay/triplication with minimal designer input.

Miryala, Sandeep↗
DOE OSTI2024

Soft error-mitigating semiconductor design system and associated methods

A soft error-mitigating semiconductor design system and associated methods that tailor circuit design steps to mitigate corruption of data in storage elements (e.g., flip flops) due to Single Events Effects (SEEs). Required storage elements are automatically mapped to triplicated redundant nodes controlled by a voting element that enforces majority-voting logic for fault-free output (i.e., Triple Modular Redundancy (TMR)). Storage elements are also optimally positioned for placement in keeping with SEE-tolerant spacing constraints. Additionally, clock delay insertion (employing either a single global clock or clock triplication) in the TMR specification may introduce useful skew that protects against glitch propagation through the designed device. The resultant layout generated from the TMR configuration may relax constraints imposed on register transfer level (RTL) engineers to make rad-hard designs, as automation introduces TMR storage registers, memory element spacing, and clock delay/triplication with minimal designer input.

Miryala, Sandeep↗
DOE OSTI2023

CMS High Granularity Calorimeter ECON-D ASIC overview and radiation testing results

The Compact Muon Solenoid (CMS) Experiment’s High Granularity Calorimeter (HGCAL) upgrade replaces the CMS electromagnetic and hadronic endcap calorimeters in preparation for the high-rate and high-radiation environment of the High Luminosity LHC. To effectively use the over 6 million channels of this highly-segmented “imaging” calorimeter, CMS is pioneering very front-end data compression with the Endcap Concentrator (ECON) ASICs – the ECON-T for the trigger path and the ECON-D for the data path. These 65 nm CMOS ASICs are radiation tolerant (200 Mrad) and low-power (< 2.5 mW/channel). In June 2023, we received the first full-functionality prototype of the data path concentrator ASIC, the ECON-D-P1. This talk will present an overview of the ECON-D-P1, summarize functionality and system testing, and present results from both Total Ionizing Dose (TID) and Single Event Effect (SEE) testing campaigns completed in summer 2023, validating the ECON-D radiation tolerant performance.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

The Mu2e Digitizer ReAdout Controller (DiRAC): characterization and radiation hardness

The Mu2e experiment at Fermilab will search for the neutrino-less coherent conversion of a muon into an electron in the field of a nucleus. Mu2e detectors comprise a straw tracker, an electromagnetic calorimeter and a veto for cosmic rays. The calorimeter employs 1348 Cesium Iodide crystals readout by silicon photo-multipliers and fast front-end, and digitization electronics. The digitization board is named DiRAC (Digitizer ReAdout Controller) and 140 cards are needed for the readout of the full calorimeter. The DiRACs are hosted in crates located on the external surface of calorimeter disks, inside the detector solenoid cryostat and must sustain very high radiation and magnetic field so it was necessary to fully qualify it. Several version of prototypes were validated for operation in a high-vacuum (10−4 Torr) and under a 1T magnetic field. An extensive radiation hardness qualification campaign, carried out with photons, 14 MeV neutron beams, and 200 MeV protons, certified the DiRAC design to sustain doses up to 12 Krad, neutron fluences up to ∼ 1011 1 MeV neq/cm2, and very low occurrences of single-event effects. The qualification campaigns and quality assurance procedures will be reviewed.

43 PARTICLE ACCELERATORS↗