On-Wafer Microfabricated Test Structures for Characterizing RF Breakdown in Narrow Gaps.
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NREL is the only organization in the US that is accredited to conduct tests of wind turbine systems and components in accordance with International Electrotechnical Commission (IEC) test standards. The National Wind Technology Center houses the only full-scale wind turbine blade drivetrain test facilities in the US. To maintain these facilities, accreditation, and the acceptance of the wind industry, NREL must strive continuously to maintain and improve staff capabilities, procedures, facility and equipment. In addition, as wind turbines continue to increase in size, NREL must improve its capability to test the larger components associated with these new turbines. NREL is currently investigating methods to increase blade and drivetrain testing capabilities. Mitsubishi Power Systems (MPS) must also strive to meet the demands of the evolving wind energy industry by developing, proving and manufacturing new, cost-effective blades for its turbines. Mitsubishi has established a joint venture with TPI composites of Rhode Island for manufacturing blades to be installed on US wind turbines. There is an obvious advantage to test these prototype blades in a US facility. The NREL blade test facility is uniquely capable of fulfilling this need. In addition, NREL can provide other testing support to MPS through the use of its dynamometer facility for drivetrain testing and through the use of NREL’s field-testing capabilities for testing wind turbine systems. This CRADA provides the opportunity for both organizations to achieve critical goals in development of wind energy in the US. MPS obtains verification of its wind turbine components and system. NREL obtains improved test capabilities.
Electroluminescence (EL) characterization technique is used to quantify recombination properties in back junction silicon (Si) heterojunction (HJ) solar cell test structures with interdigitated back contact (IBC) emitters and metal contacts. These test structures are three terminal devices that allow the selective biasing and injection of minority carriers into spatially isolated emitter strips having different widths. This allows the study of minority carriers' current transport, flow, and recombination in these regions, which can, then, be applied to full IBC cells. EL is used to verify that emission is proportional to the minority carriers' concentration in the corresponding regions of the device, thus providing information relevant to minority carriers' collection when compared with laser beam induced current technique in considerably less time and with a higher spatial resolution. Current transport through the inversion layer that occurs due to the band bending at the n crystalline Si and p amorphous Si interface is discussed relying on the distance that minority carriers travel in different configurations and on their diffusion length. Laser defect spots (LDS) were, then, introduced in the emitter regions to analyze the spatial profile of minority carriers as they recombine at the LDS due to their high surface recombination velocity. Ideality factors in different configurations are spatially mapped from EL before and after introducing LDS and are used to show the effect of the inversion layer on the different recombination mechanisms. Current transport through the inversion layer is studied at different biasing conditions and correlated with current transport after LDS.
While different methods exist to determine the contact resistivity in semiconductor devices, these methods are limited to measurement of the majority carrier contacts. The measurement of p‐ or n‐type contacts on n‐ or p‐type crystalline silicon, respectively, is challenging due to the blocking diode formed by the p–n junction. In this article, we address this problem for tunneling oxide passivating contacts used in high‐efficiency Si solar cells. We propose a universal method to extract contact resistivity on symmetric test structures with polycrystalline silicon on SiO x (poly‐Si/SiO x ) passivating contacts under illumination, both for p–n and high–low‐junction passivated contacts. In this method, we demonstrate that the total contact resistance of each cell grid finger to the base wafer is governed by its effective contact area, defined by the transfer length extending from both sides of the finger. Therefore, the grid contact resistance of a poly‐Si contact depends on the ratio of the doped poly‐Si sheet resistance to the tunneling contact resistivity.
The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&D on monolithic pixel sensors are investigating the feasibility of the Tower Partners Semiconductor Co. 65 nm process for use in the next generation of vertex detectors. The ITS3 aims to employ wafer-scale Monolithic Active Pixel Sensors thinned down to 20–40 µm and bent to form truly cylindrical half barrels. Among the first critical steps towards the realisation of this detector is to validate the sensor technology through extensive characterisation both in the laboratory and with in-beam measurements. The Digital Pixel Test Structure (DPTS) is one of the prototypes produced in the first sensor submission in this technology and has undergone a systematic measurement campaign whose details are presented in this article. The results confirm the goals of detection efficiency and non-ionising and ionising radiation hardness up to the expected levels for ALICE ITS3 and also demonstrate operation at + 20 °C and a detection efficiency of 99% for a DPTS irradiated with a dose of 10 15 1 MeV n eq cm -2 . Furthermore, spatial, timing and energy resolutions were measured at various settings and irradiation levels.
Topology Optimization (TO) determines a material distribution within a domain under given conditions and design constraints, and generally generates complex geometries as a result. Complementary to TO, Additive Manufacturing (AM) offers the ability to fabricate complex geometries which may be difficult to manufacture using traditional techniques such as milling. AM has been used in multiple industries including the medical devices area. Hence, TO may be used to create patient-matched devices where the mechanical response is catered to a particular patient. Furthermore, during a medical device regulatory 510(k) pathway, demonstrating that worst-cases are known and tested is critical to the review process. Using TO and AM to predict worst-case designs for subsequent performance testing may be challenging and does not appear to have been thoroughly explored. Investigating the effects of TO input parameters when AM is employed may be the first step in determining the feasibility of predicting these worst-cases.
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Abstract not provided.
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In this presentation, I examine the basic concepts of the device physics that can be used to distinguish various degradation and recovery modes on a cell level. The known degradation modes (bulk LeTID and LID, UVID, etc.) are due to defects and impurities that cause the photocarrier recombination according to Shockley-Reed-Hall (SRH) statistics. The SRH recombination rate strongly depends on the balance of electron and hole capture rates into the defects, which in turn, are governed by their local concentrations. The strongest recombination takes place at approximately equal concentrations of electrons and holes, while at low injection conditions (when one type of carrier dominates) the SRH recombination is suppressed. For cell degradation modes that affect the passivated interface (UVID, H-induced TOPCon contact degradation) the defects are at the interface under low-injection conditions due to either high local doping or the adjacent built-in charge in the dielectric. This mode is characterized by changes in the "diode prefactor" J01 slope in the inverse lifetime-injection level curve. In contrast, bulk degradation (LeTID, LID) affects bulk lifetime, with J01 slope unchanged. Carrier lifetime - injection level plots therefore serve as clear indicators of different degradation modes and are shown by experimental examples.
Thermal energy storage is a key element in concentrating solar energy systems. In 2017 a Roadmap toward a third-generation system that could meet the SunSHOT goals of 0.06 $/kWe recommended increasing temperatures to > 700° C for heat transfer media to in-crease thermal efficiencies and lower levelized costs of heat. In 2021, the U.S. Department of Energy selected the particle pathway, G3P3, to build a 1 MWt prototype solar tower with 6 MWh thermal energy storage at the NSTTF in Albuquerque, NM. Of the primary components, the falling particle receiver, and particle-to-sCO2 heat exchanger have been demonstrated at the 250 kWt capacity. The storage component is now being demonstrated as part of the G3P3-USA and G3P3-KSA pilot plants. Storage bin liner materials have been demonstrated by KSU in 2016 and 2019. A flowing particle storage container was demonstrated in 2020 by KSU. The testing presented in this work will be the first to test the particle to wall interactions with mono-lithic refractory insulation, and to validate a transient thermal transport model with the unique kinetics of bulk solids in funnel-flow where cooler particles near the walls flow inward toward a hot central flow channel. This work will also de-risk and characterize the specific design of the G3P3-USA storage bin.
Abstract not provided.
A series of extensively instrumented tests was performed on the Structural Evaluation Test Unit in the early 1990s. The purpose of these tests was to determine the response of a minimally designed cask to impacts that were more severe than the design basis impact. This test series provides an excellent opportunity for benchmarking explicit dynamic finite element analysis programs for behaviors that may be experienced by casks during regulatory and extra-regulatory impact events. This report provides the results of the four tests that were conducted. It is meant to go along with a companion report that defines the benchmark problem and gives the locations for the instrumentation and inspection points.
A series of extensively instrumented tests was performed on the Structural Evaluation Test Unit in the early 1990s. The purpose of these tests was to determine the response of a minimally designed cask to impacts that were more severe than the design basis impact. This test series provides an excellent opportunity for benchmarking explicit dynamic finite element analysis programs for behaviors that may be experienced by casks during regulatory and extra-regulatory impact events. This report provides the parameters of the test unit, the locations of instrumentation, the locations of inspection points, and the parameters of the four tests that were conducted. A companion report provides the results of the tests.
This report is a continuation of the work performed in the report, Mo-100 Disk Structural Integrity Tests I [1]. The NorthStar pressed and sintered 29 mm diameter, 0.5 mm thick Mo-100 disks will be subjected to large temperature gradients when in-beam during production. These large temperature gradients cause high stress and deformation within the disks that could prove detrimental to the target assembly’s cooling performance. Disk fracture is also a possibility that must be understood. Therefore, disk structural integrity tests were performed to understand the thermal induced behavior of these disks. In order to replicate the in-beam conditions, the Mo-100 disks were subjected to large temperature gradients using a 30kW induction heater and coil. A series of transient tests were conducted in a similar fashion as the previous work, as well as an attempt to create steady state conditions for more accurate temperature gradients. The transient thermal test setup and results are described in this report.
Among GaN lateral power devices, with proper E-field management, the breakdown occurs in the device isolation region rather than the active region. In this paper, we investigate field-dependent carrier transport in the isolation structures. Isolation test structures with variations in buffer doping, un-intentionally doped (UID) GaN thickness, and implantation conditions were fabricated. Electrical characterization was performed over a wide range of voltage and temperature. With varying UID GaN thickness and buffer doping, the leakage current and breakdown characteristics remain the same for a specific implantation condition, indicating that the leakage conduction and breakdown are governed by the implanted GaN region. Analysis of the temperature-dependent I–V reveals that carrier transport in the implanted GaN can be well explained by hopping conduction, involving three distinctive regions of operation depending on the E-field. At low E-field, carrier transport is ohmic, consistent with variable range hopping, driven by thermal activation. At medium E-field, a field enhanced thermally activated hopping is observed, following σ ∼ σ(T)exp(E). At high E-field, activation-less hopping is visible, following σ ∼ exp(−1/E), which occurs above a critical E-field limited by localization length.
INL performed targeted oxidation tests to measure oxidation rates for samples of ET-10 and ETU-10 graphite under CRADA No. 21CRA22 Mod. 3, Annex A, “Tritium Testing to Support Kairos Power Advanced Reactor Demonstration” (04/02/2024). All testing was conducted within INL’s Carbon Characterization Laboratory (CCL) using test standard ASTM D7542-21 "Standard Test Method for Air Oxidation of Carbon and Graphite in the Kinetic Regime" [ASTM International, 2021]. Kairos Power provided all test specimens through its graphite vendor Ibiden, Inc. to INL and ASTM specimen specified dimensions. Information within this report only provides the Arrhenius oxidation rate plots as a function of temperature for each graphite grade tested. The raw mass loss per time data will be provided on the Nuclear Data Management and Analysis System (NDMAS) portal located on the INL information system.
ABSTRACT Measurement of peculiar velocities by combining redshifts and distance indicators is a powerful way to measure the growth rate of a cosmic structure and test theories of gravity at low redshift. Here we constrain the growth rate of the structure by comparing observed Fundamental Plane peculiar velocities for 15 894 galaxies from the 6dF Galaxy Survey (6dFGS) and Sloan Digital Sky Survey (SDSS) with predicted velocities and densities from the 2M++ redshift survey. We measure the velocity scale parameter $\beta \equiv {\Omega _{\rm m}^\gamma }/b = 0.372^{+0.034}_{-0.050}$ and $0.314^{+0.031}_{-0.047}$ for 6dFGS and SDSS, respectively, where Ωm is the mass density parameter, γ is the growth index, and b is the bias parameter normalized to the characteristic luminosity of galaxies, L*. Combining 6dFGS and SDSS, we obtain β = 0.341 ± 0.024, implying that the amplitude of the product of the growth rate and the mass fluctuation amplitude is fσ8 = 0.338 ± 0.027 at an effective redshift z = 0.035. Adopting Ωm = 0.315 ± 0.007, as favoured by Planck and using γ = 6/11 for General Relativity and γ = 11/16 for DGP gravity, we get $S_8(z=0) = \sigma _8 \sqrt{\Omega _{\rm m}/0.3} =0.637 \pm 0.054$ and 0.741 ± 0.062 for GR and DGP, respectively. This measurement agrees with other low-redshift probes of large-scale structure but deviates by more than 3σ from the latest Planck CMB measurement. Our results favour values of the growth index γ > 6/11 or a Hubble constant H0 > 70 km s−1 Mpc−1 or a fluctuation amplitude σ8 < 0.8 or some combination of these. Imminent redshift surveys such as Taipan, DESI, WALLABY, and SKA1-MID will help to resolve this tension by measuring the growth rate of cosmic structure to 1 per cent in the redshift range 0 < z < 1.