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Passive Peak Temperature Monitors
Passive Peak Temperature Monitors Project Summary
Silicon Carbide Temperature Monitor Processing Improvements. Status Report
Silicon carbide (SiC) temperature monitors are used as temperature sensors in Advanced Test Reactor (ATR) irradiations at the Idaho National Laboratory (INL). Although thermocouples are typically used to provide real-time temperature indication in instrumented lead tests, other indicators, such as melt wires, are also often included in such tests as an independent technique of detecting peak temperatures incurred during irradiation. In addition, less expensive static capsule tests, which have no leads attached for real-time data transmission, often rely on melt wires as a post-irradiation technique for peak temperature indication. Melt wires are limited in that they can only detect whether a single temperature is or is not exceeded. SiC monitors are advantageous because a single monitor can be used to detect for a range of temperatures that occurred during irradiation. As part of the process initiated to make SiC temperature monitors available at the ATR, post-irradiation evaluations of these monitors have been previously completed at the High Temperature Test Laboratory (HTTL). INL selected the resistance measurement approach for determining irradiation temperature from SiC temperature monitors because it is considered to be the most accurate measurement. The current process involves the repeated annealing of the SiC monitors at incrementally increasing temperature, with resistivity measurements made between annealing steps. The process is time consuming and requires the nearly constant attention of a trained staff member. In addition to the expensive and lengthy post analysis required, the current process adds many potential sources of error in the measurement, as the sensor must be repeatedly moved from furnace to test fixture. This time-consuming post irradiation analysis is a significant portion of the total cost of using these otherwise inexpensive sensors. An additional consideration of this research is that, if the SiC post processing can be automated, it could be performed in an MFC hot cell, further reducing the time and expense of lengthy decontaminations prior to processing. Sections of this report provide a general description of resistivity techniques currently used to infer peak irradiation temperature from silicon carbide temperature monitors along with some representative data, the proposed concepts to improve the process of analyzing irradiated SiC temperature monitors, the completed efforts to prove the proposed concepts, and future activities. The efforts detailed here succeeded in designing and developing a real-time automated SiC resistivity measurement system, and performed two initial test runs. Activities carried out include the assembly and integration of the system hardware; the design and development of a preliminary monitor fixture; the design of a technique to automate the data analysis and processing; the development of the communication, coordination, and user software; and the execution and troubleshooting of test run experiments using the box furnace. Although the automation system performed as required, the designed fixture did not succeed in establishing the needed electrical contacts with the SiC monitor.
TEMPERATURE MONITORING OPTIONS AVAILABLE AT THE IDAHO NATIONAL LABORATORY ADVANCED TEST REACTOR
As part of the Advanced Test Reactor National Scientific User Facility (ATR NSUF) program, the Idaho National Laboratory (INL) has developed in-house capabilities to fabricate, test, and qualify new and enhanced sensors for irradiation testing. To meet recent customer requests, an array of temperature monitoring options is now available to ATR users. The method selected is determined by test requirements and budget. Melt wires are the simplest and least expensive option for monitoring temperature. INL has recently verified the melting temperature of a collection of materials with melt temperatures ranging from 100 to 1000 C with a differential scanning calorimeter installed at INL’s High Temperature Test Laboratory (HTTL). INL encapsulates these melt wires in quartz or metal tubes. In the case of quartz tubes, multiple wires can be encapsulated in a single 1.6 mm diameter tube. The second option available to ATR users is a silicon carbide temperature monitor. The benefit of this option is that a single small monitor (typically 1 mm x 1 mm x 10 mm or 1 mm diameter x 10 mm length) can be used to detect peak irradiation temperatures ranging from 200 to 800 C. Equipment has been installed at INL’s HTTL to complete post-irradiation resistivity measurements on SiC monitors, a technique that has been found to yield the most accurate temperatures from these monitors. For instrumented tests, thermocouples may be used. In addition to Type-K and Type-N thermocouples, a High Temperature Irradiation Resistant ThermoCouple (HTIR-TC) was developed at the HTTL that contains commercially-available doped molybdenum paired with a niobium alloy thermoelements. Long duration high temperature tests, in furnaces and in the ATR and other MTRs, demonstrate that the HTIR-TC is accurate up to 1800 C and insensitive to thermal neutron interactions. Thus, degradation observed at temperatures above 1100 C with Type K and N thermocouples and decalibration due to transmutation with tungsten-rhenium and platinum rhodium thermocouples can be avoided. INL is also developing an Ultrasonic Thermometry (UT) capability. In addition to small size, UT’s offer several potential advantages over other temperature sensors. Measurements may be made near the melting point of the sensor material, potentially allowing monitoring of temperatures up to 3000 C. In addition, because no electrical insulation is required, shunting effects are avoided. Most attractive, however, is the ability to introduce acoustic discontinuities to the sensor, as this enables temperature measurements at several points along the sensor length. As discussed in this paper, the suite of temperature monitors offered by INL is not only available to ATR users, but also to users at other MTRs.
Benchmark Analysis for the Optical Dilatometry Method Using Silicon Carbide Temperature Monitors
The main objective of this project was to conduct a benchmark analysis for the optical dilatometry method by using NSUF’s SiC temperature monitors: two (2) SiC temperature monitors provided by NSUF’s BSU-8242 experiment and two (2) SiC temperature monitors provided by NSUF’s GE-Hitachi experiment. Per the BSU-8242 experiment, KGT-3597 and KGT-3591 had a design temperature of 400°C and an exposure of 3 dpa. Per the GE-Hitachi experiment, KGT-3341 and KGT-3336 had a design temperature of 290°C +/- 50°C and an exposure of 0.5–1 dpa. The KGT-3336 SiC monitor was split into two pieces during the decontamination process, making the dilatometry method the only way to analyze both those pieces. The BSU-8242 monitors revealed peak irradiation temperatures under the design temperature, and the GE-Hitachi monitors revealed peak irradiation temperatures within the design temperature range. The optical dilatometry method measured the peak irradiation temperature of BSU-8242 KGT-3597 to be 330°C, while the resistivity method measured the peak irradiation temperature of BSU-8242 KGT-3591 to be 320°C +/- 20°C. The optical dilatometry method measured the peak irradiation temperatures of the pieces of GE-Hitachi KGT-3336 to be 260°C (for the larger piece) and 220°C (for the smaller piece), while the resistivity method measured the peak irradiation temperature of GE-Hitachi KGT-3341 to be 300°C, with an accuracy range of -50°C to +20°C. Both methods of SiC temperature monitor analysis produced very similar peak irradiation temperatures for each pair of SiC passive monitors from the two experiments, BSU-8242 and GE-Hitachi. The results show dilatometry method to be a reliable and less time-intensive process for determining irradiation temperatures from passive SiC thermometry.
Advancing Temperature Monitoring of the Bottom Anode in a Direct Current Electric Arc Furnace Operations with Distributed Optical Fiber Sensors.
The bottom anode in the Direct Current Electric Arc Furnace (DC EAF) is critical for completing the electrical circuit necessary for sustaining the arc within the furnace. For pin-type bottom anodes, monitoring of the temperature of select pins instrumented with thermocouples is performed to track bottom wear in the EAF and inform the operator when the furnace should be removed from service. Furthermore, this work presents the results from a plant trial using distributed temperature monitoring of bottom anode pins in a 165-ton DC EAF over a two-month service period utilizing two optical fiber sensing techniques: fiber Bragg grating (FBG) and Rayleigh backscattering (RBS). The early detection of temperature anomalies along the length of the anode pin through distributed sensing enhances operational safety, providing a robust alternative to traditional thermocouples.
Robust metal-ceramic coaxial cable sensors for distributed temperature monitoring in fossil energy power systems
The project aims to develop a new type of low cost, robust metal-ceramic coaxial cable (MCCC) Fabry-Pérot interferometer (FPI) sensor and demonstrate the capability of cascading a series of FPI sensing points in a single MCCC for real-time distributed monitoring of temperature up to 1000°C. The technical accomplishments of this project include: (i) development of metal and ceramic materials for fabricating the MCCC suitable for use in high temperature (up to 1000oC) fossil fuel, (ii) design, construction and test of single point MCCC-FPI sensors for high temperature measurement at deviation within ±2.7%, (iv) demonstration of the MCCC-FPI sensors for real-time distributed temperature measurement with desired sensitivity, spatial resolution, stability, and response speed that are important to practical applications, and (v) development of a novel MCCC-FPI sensor platform for measuring high frequency dielectric constants for solids and liquids as function of temperature. Single point MCCC-FPI sensors are fabricated based on the FPI parameters, including the relationship between reflector width and reflectance as well as the inter-reflector distance for a FPI, estimated by model calculations. MCCC-FPI sensors have been made using insulators of packed ceramic powders, ceramic tubes, and air or inert gases; outer conductors of various metal tubes; inner conductors of wires of the same metal materials as the tubes used; and reflectors of dense ceramic discs, casted ceramic discs and air gaps. The insulator, conductor and reflector materials are investigated for their thermal, chemical, and structural stabilities under temperatures up to 1000°C in simulated coal-derived syngas. Based on the experimental findings, alumina tube and discs, and stainless steel tube and wire are selected for reflector, insulator and outer and inner conductors, respectively. Air or inert gases are found to be useful for reflectors (in the form of narrow groves) or insulators (in the form of empty chamber cavity between ceramic discs) in construction of MCCC-FPI sensors. Single point MCCC-FPI sensors have been fabricated using stainless steel as conductors, dense α-alumina tubes as dielectric insulators, and two air gaps in the insulator as reflectors. The MCCC-FPI sensor with air gap reflectors has been demonstrated for measuring temperature between 200 and 500°C using microwave as sensing signal in a frequency range of 2 – 8 GHz. The temperature measurement is achieved by monitoring the frequency shift (Δƒ) of a selected resonant peak of the microwave interferogram reflected from the pair of air gap reflectors. The MCCC-FPI sensor exhibited excellent linear temperature-dependence for Δƒ, good accuracy (deviation ±2.7%), and reasonable response speed (<180 s for stabilization). Thermal drifting of the sensing signal was also rather minimal for the MCCC-FPI sensors after operating for more than one week at around 500oC. MCCC-FPI sensors with each containing 2 or 3 pairs of reflectors (i.e. 2 or 3 FPIs in a single cable) have been fabricated and demonstrated for distributed temperature measurement between 250 and 550°C in a microwave frequency range of 3-6 GHz. The measurement is achieved by monitoring the frequency shift of a selected resonant peak of the reflected microwave interferogram, which is obtained by the join-time-domain signal processing method. The results demonstrate that the FPI sensing points in both the three-point and two-point MCCC sensors can measure distributed high temperature with good reproducibility and consistency in multiple runs of measurement tests. The sensor signal displays excellent linear dependence between temperature and the corresponding frequency shift. The 2-point and 3-point MCCC-FPI sensors also exhibit fast response to environmental temperature changes. A three-point MCCC-FPI sensor has been further examined for temperature measurement up to 1000°C for multiple heating-cooling cycles and the results prove that the sensor is suitable for distributed temperature measurement up to 1000°C. MCCC-FPI sensors with more than 4 FPIs point in a single line are made in two structures: the first uses alumina tube as insulation and air gaps as reflectors; and the second uses air chamber as insulation and complete circular alumina discs (2 mm-thick) as reflectors. MCCC-FPIs in neither of the two structures are able to exceed four FPIs in a cable because the reflections from the FPIs are too strong for the microwave to transmit through >4 FPIs over a long distance. Specially shaped alumina discs made by removing parts of the circular discs are found to decrease the microwave reflectance because of reduced reflection areas. However, the smallest reflectance (in terms of percentage of the incident signal) obtained in this work is as high as 7.5%, which is still too large to construct more than 10 FPIs in a single MCCC. Nevertheless, the feasibility of the proposed multipoint MCCC-FPI has been demonstrated using air insulation and 2 mm-thick low-ε r Teflon discs as reflectors on a 2 m-long cable containing 10 FPIs (with reflectance <5% on each FPI). These results indicate that the contrast of dielectric constant between the insulation and reflector has a more significant impact on the reflectance. Thus, future research efforts should also be directed to developing ceramic materials (dense or porous) with low dielectric constant values which, when used as insulation or reflector, can realize large numbers of FPIs in a single cable over a long distance. To assist the development of high temperature dielectric materials, a novel MCCC-FPI sensor platform is developed and successfully demonstrated for measuring high frequency dielectric constants for fluids, packed dielectric solids, and ceramic tube materials and determining ε r dependencies on temperature and chemical composition, etc..
Evaluations of University of Wisconsin Silicon Carbide Temperature Monitors 300 LO and 400 LO B
Silicon carbide (SiC) temperature monitors 05R4-02-A KG1403 (300 LO) and 05R4-01-A KG1415 (400 LO B) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak irradiation temperatures. HTTL measurements indicate that the peak irradiation temperature for the 300 LO monitor was 295 {+-} 20 °C and the peak irradiation temperature for the 400 LO B monitor was 294 {+-} 25 °C. Two silicon carbide (SiC) temperature monitors irradiated in the Advanced Test Reactor (ATR) were evaluated at the High Temperature Test Lab (HTTL) to determine their peak temperature during irradiation. These monitors were irradiated as part of the University of Wisconsin Pilot Project with a target dose of 3 dpa. Temperature monitors were fabricated from high density (3.203 g/cm 3 ) SiC manufactured by Rohm Haas with a nominal size of 12.5 mm x 1.0 mm x 0.75 mm (see Attachment A). Table 1 provides identification for each monitor with an expected peak irradiation temperature range based on preliminary thermal analysis (see Attachment B). Post irradiation calculations are planned to reduce uncertainties in these calculated temperatures. Since the early 1960s, SiC has been used as a post-irradiation temperature monitor. As noted in Reference 2, several researchers have observed that neutron irradiation induced lattice expansion of SiC annealed out when the post-irradiation annealing temperature exceeds the peak irradiation temperature. As noted in Reference 3, INL uses resistivity measurements to infer peak irradiation temperature from SiC monitors. Figure 1 depicts the equipment at the HTTL used to evaluate the SiC monitors. The SiC monitors are heated in the annealing furnace using isochronal temperature steps that, depending on customer needs, can range from 50 to 800 °C. This furnace is located under a ventilation hood within the stainless steel enclosure. The ventilation system is activated during heating so that any released vapors are vented through this system. Annealing temperatures are recorded using a National Institute of Standards and Technology (NIST) traceable thermocouple inserted into an alumina tube in the furnace. After each isochronal annealing, the specimens are placed in a specialized fixture located in the constant temperature chamber (maintained at 30 °C) for a minimum of 30 minutes. After the 30 minute wait time, each specimen's resistance is measured using the specialized fixture and a calibrated DC power analyzer. This report discusses the evaluation of the SiC monitors and presents the results. Testing was conducted in accordance with Reference 3. Sections 2 and 3 present the data collected for each monitor and provide interpretation of the data. Section 4 presents the evaluated temperature results.
FET Junction Temperature Monitoring Using Novel On-Chip Solution
A novel junction temperature monitoring sensor is proposed and experimentally demonstrated for application in MOS-gate power devices. The sensor is created using the polycide gate electrode layer of the devices to create a temperature-sensitive resistor without any additional fabrication steps. The resistor is located on the field oxide with one end grounded at the device reference terminal to isolate it from the device current and voltage transients. It allows in-situ monitoring of the device junction temperature during active circuit operation. The technology has been implemented to monitor the junction temperature of Silicon Carbide Junction Barrier Schottky Field Effect Transistors (SiC JBSFETs) with the bi-directional FET (BiDFET).
A Fiber Optic Ultrasonic Sensing System for High Temperature Monitoring Using Optically Generated Ultrasonic Waves
This paper presents the design, fabrication, and characterization of a novel fiber optic ultrasonic sensing system based on the photoacoustic (PA) ultrasound generation principle and Fabry-Perot interferometer principle for high temperature monitoring applications. The velocity of a sound wave traveling in a medium is proportional to the medium’s temperature. The fiber optic ultrasonic sensing system was applied to measure the change of the velocity of sound. A fiber optic ultrasonic generator and a Fabry-Perot fiber sensor were used as the signal generator and receiver, respectively. A carbon black-polydimethylsiloxane (PDMS) material was utilized as the photoacoustic material for the fiber optic ultrasonic generator. Two tests were performed. The system verification test proves the ultrasound sensing capability. The high temperature test validates the high temperature measurement capability. The sensing system survived 700 °C. It successfully detects the ultrasonic signal and got the temperature measurements. The test results agreed with the reference sensor data. Two potential industry applications of fiber optic ultrasonic sensing system are, it could serve as an acoustic pyrometer for temperature field monitoring in an industrial combustion facility, and it could be used for exhaust gas temperature monitoring for a turbine engine.
Online Junction Temperature Monitoring Using Intelligent Gate Drive for SiC Power Devices
Junction temperature is a prime design/operation parameter, as well as, a main indicator of device's health condition for power electronics converters. Compared to its silicon (Si) counterparts, it is more critical for silicon carbide (SiC) devices due to the reliability concern determined by the immaturity of new material and packaging. This paper presents a practical implementation using an intelligent gate drive for online junction temperature monitoring of SiC devices based on turn-off delay time as the thermo-sensitive electrical parameter. First, the sensitivity of turn-off delay time on the junction temperature for fast switching SiC devices is analyzed. A gate impedance regulation assist circuit is proposed to enhance the sensitivity by a factor of 60 and approach 736 ps/°C tested in the case study with little penalty on the power conversion performance. Next, an online monitoring unit based on gate assist circuits is developed to monitor the turn-off delay time in real time with the resolution less than 104 ps. As a result, the micro-controller is capable of “reading” junction temperature during the converter operation. Finally, a SiC-based half-bridge inverter is constructed with an intelligent gate drive consisting of the gate impedance regulation circuit and online turn-off delay time monitoring unit. Experimental results demonstrate the feasibility and accuracy of the proposed approach.
Distributed Temperature Monitoring of Tundish Refractory Lining Using Optical Fiber Sensors
Distributed temperature monitoring can provide useful insights into the thermal conditions in the continuous caster tundish that can affect operating stability and cast quality, such as preheat conditions, superheat uniformity, fill height, and refractory wear. In the current study, fiber optic sensors were embedded into the refractory lining of a lab-scale tundish to record the temperature profiles during dry-out, preheating, and direct molten steel exposure to demonstrate sensor performance. Additional trials were performed with fiber optic sensors embedded in an industrial tundish used in production. Furthermore, the results demonstrate that fiber optic sensors using Rayleigh technology can provide accurate distributed temperature measurements in refractory lined vessels and provide useful information about the process.
Evaluations of Silicon Carbide Temperature Monitors
The effect of irradiation on materials properties is an important field of study for materials usage in both fission and fusion systems for energy production. Neutron flux and energy spectrums are well understood; however, the irradiation temperature can be more difficult to determine. Since the early 1960s, Silicon Carbide (SiC) has been used as a passive post-irradiation temperature monitor because the irradiation defects anneal out above the irradiation temperature. Irradiation temperature is determined by measuring a property change after isochronal annealing or during a continuously monitored annealing process. There are many properties that may be measured including electrical resistivity, bulk density, dimensions, thermal diffusivity, or lattice spacing. Electrical resistivity is accepted as a robust measurement technique; however, such method is time-consuming since the steps involved must be performed in a serial manner. The use of thermal expansion from continuous dilatometry is an automated process requiring minimal setup time. As part of a Nuclear Science User Facilities (NSUF) project, low dose silicon carbide monitors were irradiated in the BR2 material test reactor at SCK, Belgium, and were then evaluated at the Idaho National Laboratory (INL) High Temperature Test Laboratory (HTTL) to determine their peak temperature achieved during irradiation. The technical significance of this work was that the monitors were irradiated to a dose that was significantly less than recommended in published literature. This paper will discuss the evaluation processes available at HTTL and the performance of the low dose silicon carbide temperature monitors.
Raspberry Pi–powered temperature monitoring of growth chamber microclimates
While controlled environments are desirable for growing and measuring plants, growth chambers and greenhouses typically have microclimates that impact plant growth, development, and stress responses. Furthermore, opening and closing the doors of a controlled environment introduces variation in the environment, especially at temperature extremes, affecting both the measurements and the organisms within. Using multiple temperature data loggers to normalize results can be cost-prohibitive and rarely offers real-time feedback on temperature status. We used low-cost single-board computers, cameras, and temperature sensors to manage and capture growth chamber temperatures while acquiring plant image data. Detailed here are methods to document microclimates within a growth chamber so that data can be normalized to measured temperature information. This protocol describes a low-cost method for automated temperature monitoring, which enables both high-throughput measurements of temperature along with plant growth and stress responses via plant imaging.
Develop Accurate Techniques for Passive SiC Temperature Monitoring of Miniature Samples for Cross-Cutting Applications
Passive thermometry is critically important because most fuels and materials irradiation experiments are not instrumented, and it is necessary to understand the irradiation temperature to properly interpret any post-irradiation examination data, including evolving properties and/or microstructures. The standard passive thermometry approach uses continuous dilatometry to evaluate changes in the instantaneous coefficient of thermal expansion during post-irradiation thermal annealing. This approach has limitations in terms of sample size (minimum length requirements) and the maximum irradiation temperature that can be accurately determined, which is limited by the reduced swelling (and therefore recovery) following higher temperature irradiation and limitations on the furnaces used with push-rod dilatometers. This work evaluates two new proposed techniques for post-irradiation evaluation of passive SiC temperature monitors: differential scanning calorimetry (DSC) and Raman spectroscopy. DSC is an extremely sensitive technique that can be used for any specimen geometry and is capable of higher temperature operation. Raman spectroscopy is similar in that it is a surface technique capable of examining extremely small samples (submillimeter), can be used with a heated stage up to 1,500°C (planned for future work), and is capable of mapping local irradiation temperatures throughout a sample. Existing SiC samples that were previously irradiated over a wide range of temperatures were cut into multiple pieces to allow for annealing studies using multiple different techniques: dilatometry, DSC, and Raman spectroscopy. This approach mitigates the concern that samples analyzed using one technique may have a slightly different irradiation history than those analyzed using a different technique. Recovery was clearly observed during annealing using both DSC and dilatometry. In some cases, a direct comparison could not be made due to some of the DSC runs accidentally including material from multiple specimens and issues with using an alternative DSC sample holder for the highest temperature annealing studies. Nevertheless, one trend was clear: the DSC runs resulted in higher irradiation temperatures compared to those of the dilatometry runs. Part of this could be attributed to the higher temperature ramp rates used during the DSC runs, which are often preferred to reduce noise in the measurements. By comparison, dilatometry has previously been shown to produce better data at lower ramp rates. Future work should further investigate the ideal ramp rate for both techniques to produce consistent results. Additional work should evaluate the best holder material to use for DSC runs exceeding 1,000°C to provide reliable data while preventing interactions between SiC and the holder.
Develop Accurate Techniques for Passive SiC Temperature Monitoring of Miniature Samples for Cross-Cutting Applications
Passive thermometry is critically important because most fuels and materials irradiation experiments are not instrumented, and it is necessary to understand the irradiation temperature to properly interpret any post-irradiation examination data, including evolving properties and/or microstructures. The standard passive thermometry approach uses continuous dilatometry to evaluate changes in the instantaneous coefficient of thermal expansion during post-irradiation thermal annealing. This approach has limitations in terms of sample size (minimum length requirements) and the maximum irradiation temperature that can be accurately determined, which is limited by the reduced swelling (and therefore recovery) following higher temperature irradiation and limitations on the furnaces used with push-rod dilatometers. This work evaluates two new proposed techniques for post-irradiation evaluation of passive SiC temperature monitors: differential scanning calorimetry (DSC) and Raman spectroscopy. DSC is an extremely sensitive technique that can be used for any specimen geometry and is capable of higher temperature operation. Raman spectroscopy is similar in that it is a surface technique capable of examining extremely small samples (submillimeter), can be used with a heated stage up to 1,500°C (planned for future work), and is capable of mapping local irradiation temperatures throughout a sample. Existing SiC samples that were previously irradiated over a wide range of temperatures were cut into multiple pieces to allow for annealing studies using multiple different techniques: dilatometry, DSC, and Raman spectroscopy. This approach mitigates the concern that samples analyzed using one technique may have a slightly different irradiation history than those analyzed using a different technique. Recovery was clearly observed during annealing using both DSC and dilatometry. In some cases, a direct comparison could not be made due to some of the DSC runs accidentally including material from multiple specimens and issues with using an alternative DSC sample holder for the highest temperature annealing studies. Nevertheless, one trend was clear: the DSC runs resulted in higher irradiation temperatures compared to those of the dilatometry runs. Part of this could be attributed to the higher temperature ramp rates used during the DSC runs, which are often preferred to reduce noise in the measurements. By comparison, dilatometry has previously been shown to produce better data at lower ramp rates. Future work should further investigate the ideal ramp rate for both techniques to produce consistent results. Additional work should evaluate the best holder material to use for DSC runs exceeding 1,000°C to provide reliable data while preventing interactions between SiC and the holder.
Evaluation of Low Dose Silicon Carbide Temperature Monitors
Thermocouples are generally used to provide real-time temperature indications in instrumented tests performed at materials and test reactors. Melt wires or paint spots are often included in such tests as an independent technique of detecting peak temperatures incurred during irradiation. In addition, less expensive static capsule tests, which have no leads attached for real-time data transmission, often rely on melt wires and paint spots as a post-irradiation technique for peak temperature indication. Unfortunately, these techniques are limited in that they can only detect whether a single temperature is or is not exceeded. Silicon carbide (SiC) monitors are advantageous because a single monitor can be used to determine the peak temperature reached within a relatively broad range (200 – 800°C). Although the use of SiC monitors was proposed more than five decades ago, the ultimate performance limits of this technique are not fully understood. The Nuclear Science User Facilities (NSUF) is the United States Department of Energy Office of Nuclear Energy's only designated nuclear energy user facility. Its mission is to provide nuclear energy researchers access to world-class capabilities and to facilitate the advancement of nuclear science and technology. This mission is supported by providing access to state-of-the-art experimental irradiation testing, post irradiation examination facilities, and high performance computing capabilities as well as technical and scientific assistance for the design and execution of projects. As part of an NSUF project, low dose silicon carbide monitors were irradiated in the Belgian Reactor 2 and were then evaluated both at the SCK•CEN and at Idaho National Laboratory's High Temperature Test Laboratory to determine their peak temperature achieved during irradiation. The technical significance of this work was that the monitors were irradiated to a dose that was significantly less than recommended in published literature. This paper will discuss the evaluation process, the irradiation test, and the performance of the low dose silicon carbide temperature monitors.
low-Cost, High-Performance Alternatives for Target Temperature Monitoring Using the Near-Infrared Spectrum
A process is being developed for commercial production of the medical isotope Mo-99 through a photo-nuclear reaction on a Mo-100 target using a highpower electron accelerator. This process requires temperature monitoring of the window through which a high-current electron beam is transmitted to the target. For this purpose, we evaluated two near infrared technologies: the OMEGA Engineering iR2 pyrometer and the Ocean Optics Maya2000 spectrometer with infrared-enhanced charge-coupled device (CCD) sensor. Measuring in the near infrared spectrum, in contrast to the long-wavelength infrared spectrum, offers a few immediate advantages: (1) ordinary glass or quartz optical elements can be used; (2) alignment can be performed without heating the target; and (3) emissivity corrections to temperature are typically less than 10%. If spatial resolution is not required, the infrared pyrometer is attractive because of its accuracy, low cost, and simplicity. If spatial resolution is required, we make recommendations for near-infrared imaging based on our data augmented by calculations