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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Design and Fabrication of a Thyristor Using Ion Implantation of Anode and Cathode

A thyristor is a solid-state semiconductor switch made up of four alternating p and n type layers. When the switch is turned on by a small pulse, current can flow as long as the device stays on. When the voltage drops below the turn on level or the current reverses, the switch will turn off. Thyristors only allow current to flow in one direction. One of the benefits of a thyristor device is in its capacity to conduct large voltages with a small device and a small turn-on pulse requirement. Another distinguishing feature of thyristors compared to other semiconductor devices is that it can only be in the on or off state, there’s no in-between state for the device to exist within. These properties make thyristors very useful as switch devices, especially in applications where current flow is only needed in one direction and could potentially be damaging in the opposite direction. Currently, thyristors are most commonly used to control very high power loads and they are available commercially in many designs to control different amounts of current.

42 ENGINEERING↗
DOE OSTI2020

A Novel Model of Thyristor in Reverse Recovery Process for Current Interruption Test of HVDC Circuit Breakers

The high voltage thyristor is widely used in high voltage DC (HVDC) grids due to its large current capability. Recently, the high voltage thyristor is implemented to produce a high current in the HVDC circuit breaker (CB) testing process. Unfortunately, the reverse recovery process (RRP) of a thyristor could induce significant turn-off overvoltage and power losses, jeopardizing the safety of the devices. The existing models of a thyristor cannot describe such hard-switching transient accurately. Therefore, this paper divides this process into four stages based on the physical mechanism and proposes a novel cosine exponential (CE), simulating the voltage and current of the thyristor with analytical equations, which are derived from the equivalent circuit. Moreover, the extraction procedure of the proposed model is illustrated in this paper. Finally, we develop an HVDC CB test platform to validate the proposed model. Experimental results show that the proposed CE model can accurately predict the overvoltage with a relative error of less than 8% at various current varying rates.

Dongye, Zhonghao↗
DOE OSTI2020

Triple integrated laser – thyristor

A triple laser – thyristor, i. e., a semiconductor laser with three emitting sections monolithically integrated with an electronic switch (thyristor) is experimentally studied. For comparison, the output characteristics of single and double laser – thyristors are presented. It is shown that the functional integration of a laser with a thyristor in one heterostructure allows the laser to efficiently operate in a pulsed regime (output power ∼50 W), the use of vertical integration of two laser sections increases the power to ∼90 W, and the integration of three laser sections makes it possible to increase the output optical power to ∼120 W with all other conditions being the same. (paper)

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

An Investigation into High Voltage Spiral Generators Utilizing Thyristor Input Switches

High voltage nanosecond pulses are widely used in scientific research, but their wider adoption in industry requires compact, cost effective and easy to use generators to be developed. This paper presents modelling and experimental investigations into one method of producing such pulses – a spiral generator with a solid-state, thyristor-based input switch. It includes how the pulses are formed within the spiral, why a high speed input switch is required, how the geometry of the spiral dictates its output characteristics, and the effects of different loads. Using thyristors, often connected in series to increase the operating voltage of the spiral, enables the spiral generators to have low jitter, high repetition rate, and long lifetime. Modelling of the circuit used a combination of telegraph equations to account for the wave propagation along the spiral and a lumped circuit exchanging charge between the spiral, the input switch, and the load. The model is verified by detailed experimental results with the relative error being < 10% in most cases. Here, the output voltage pulse was often observed to have an initial peak of much lower magnitude than the subsequent peak(s) – which can only be fully explained by considering wave propagation effects. Lower input switch inductance, shorter switching time, larger mean diameter of the spiral, and increasing the width of the copper tape that makes up the spiral can all increase the voltage multiplication efficiency. Though increasing the number of turns that make up the spiral can increase the output voltage, it can also lower the multiplication efficiency. By understanding the effects of different geometries the spiral can be optimized to drive different loads - three applications of such spiral generators are then presented: pulses with 10 kV amplitude and 10 kHz repetition rate for driving DBD plasma, pulses with amplitude of 10 kV and 10 kV/ns rising rate for triggering of advanced solid state switches, and pulses with -50 kV amplitude and 50 ns rising time for triggering high current gas switches through field distortion.1 Index Terms—spiral generator, nanosecond pulses, telegraph equations, series-connected thyristor module, pulse forming process

42 ENGINEERING↗
DOE OSTI2024

The CMOS Pseudo-Thyristor: a zero-static current discriminator circuit

We report a very low power discriminator circuit for pixelized detectors, called the Pseudo-Thyristor is described in this document. It is a positive feedback topology using regular PMOS and NMOS field-effect transistors (FET's) with zero static current. When a small charge is injected into the circuit, it flips rapidly due to the positive feedback and outputs a logic transition for further digitization. Simulation shows that in a 65 nm process, it is possible to achieve a detecting threshold below 5 fC while maintain the average power consumption below 10 micro-Watts when the hit occupancy is <10% for 40 MHz operation.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

A Bulk-Capacitance Reduction Method Using Self-Driven Thyristor for AC-DC Converters

Universal serial bus power delivery (USB-PD) fast chargers equipped with wide-bandgap devices are driven to higher power density and efficiency. Furthermore, the indispensable high-voltage bulk capacitors used to smooth the rectifier output could take 40% of the total system volume due to the large capacitance value required. This paper discussed a capacitor reduction method using a self-driven thyristor scheme comprised of only three components in total. No extra control circuit is needed. Circuit analysis and design equations are presented, and the design results are implemented in a 60-W GaN-based active-clamp flyback converter. The measurement results on the prototype show a 36.4% reduction of the bulk-capacitor size with similar efficiency compared to the conventional solution.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

The Recent Improvements of the SNS Extraction Kicker Power Supplies

A total of 14 extraction kickers., with one as the hot spare., are in service to extract protons out of the storage ring at the SNS. The jitter issue and the short lifetime of the switches were resolved after the thyratrons were replaced with solid state switches in 2018. This paper discusses the recent improvements. Two thyristor switches suffered overheating damage in separate incidents. One was due to the oil pump failure and the other was the result of a disconnected oil hose. An ultrasonic flow meter and a fiber optic temperature monitoring system have been installed for each extraction kicker power supply. The flow meter continuously monitors the entire tank oil flow. The temperature monitor detects the thyristor switch real-time temperatures in three locations. Fault thresholds are selected so that the thyristor switches are protected from overheating damage. Alarms are configured to alert staff to take actions before faults occur. In addition., the cause of an intermittent misfire issue was identified, and the solution was implemented. Lastly., a future oscilloscope upgrade and an oil level sensor are discussed.

Tan, Yugang↗
DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front- end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high-speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel. Another novel low-power circuit called Pseudo-Thyristor presented in another document will replace traditional discriminator and the Regenerative Current Mirror plus Pseudo- Thyristor will provide a full solution for the silicon pixel low-power frontend ASIC.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Semiconductor topologies and devices for soft starting and active fault protection of power converters

Various examples are provided related to semiconductor topologies and devices that can be used for soft starting and active fault protection of power converters. In one example, an active switch device includes an active switch having a gating control input; and a thyristor having a gating control input. The thyristor is coupled in parallel with the active switch. The active switch can be an IGBT, MOSFET, or other appropriate device. In another example, a power converter can include the active switch devices and switching control circuitry coupled to gating control inputs of the active switch devices.

Beddingfield, Richard B.↗
DOE OSTI2022

Damping inter-area oscillation using reinforcement learning controlled TCSC

Appropriate damping control of the inter-area oscillation would ensure the grid stability and maintain the tie-line power transfer capability. In this paper, we proposed a novel reinforcement learning (RL) based power oscillation damping (POD) controller that uses Thyristor Controlled Series Compensators (TCSC) to damp inter-area oscillations. By leveraging the unbiased gradient direction estimation of the natural evolution strategy (NES), we successfully regulated the power flows on the tie-lines and damped inter-area oscillations through dynamically modulating the inserted reactance of the TCSC. The proposed RL-based POD controller has been tested on both two-area four-machine system and North American Minni-WECC system. Extensive studies have demonstrated the excellent performance of the proposed RL-based TCSC POD controller in damping inter-area oscillations.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

The Upgrade of the SNS Extraction Kicker Power Supplies for the Proton Power Upgrade

The Proton Power Upgrade (PPU) project at the Spallation Neutron Source (SNS) aims to enhance the linear accelerator's power output from 1.4 to 2.8 megawatts. A critical focus lies on upgrading the Extraction Kicker Power Supplies to handle the amplified beam power. The existing capacitor charging power supplies lacked the capability to charge the Blumlein-type Pulse Forming Network (PFN) to the required 40 kV at a repetition rate of 60 Hz. To address this limitation, an initial solution involving the use of a resonant charging circuit was proposed. However, a challenge arose with a self-firing issue in the thyristor switch, which proved unsolvable within the given timeframe. Facing a critical decision point in the project, an alternative approach was explored: integrating a supplementary power supply to enhance the overall power capacity. This solution was tested and ultimately chosen as the path forward. To accommodate the additional power supply, the power distribution system had to undergo upgrades. Throughout this endeavor, a comprehensive examination of the system took place, with meticulous identification of key components. This paper delves into the technical challenges encountered during the process and the corresponding solutions that were implemented.

Tan, Yugang [ORNL] (ORCID:0000000155968252)↗
DOE OSTI2025

A High-Voltage High-Current Benchtop Test Stand for Solid-State Switch Testing at the SNS

Solid-state switches already replaced thyratrons in the SNS extraction kicker power supplies, offering improved efficiency and reliability. However, recent supply chain disruptions, combined with a self-firing issue, led us to explore alternative solutions. A vendor-developed MOS-Gated Thyristor switch was introduced but ultimately failed during testing. To investigate the failure and assess possible improvements, a benchtop test stand was constructed to evaluate the performance of a single stage board. This test stand features a Pulse Forming Network (PFN) that operates at 6 kV and 6 kA, with a repetition rate exceeding 60 Hz, simulating real operational conditions. By utilizing this setup, we seek to gain a better understanding of the failure mechanisms, refine the switch designs, and ultimately develop a more reliable alternative for the extraction kicker power supplies.

Bullman, Austin [ORNL]↗
DOE OSTI2022

Development of a 250 Degree C 15kV Supercascode Switch Using SiC JFET Technology

Tetra Corporation is developing a pulsed power drilling system for the geothermal industry. The system requires a high temperature switching technology to replace the existing technology based on Si thyristors with a temperature limit of 150 degrees C. This work focuses on the development of such switch based on a Supercascode configuration using SiC JFET technology. The development presented contains thermal models, packaging design and processes, circuit simulations and prototypes of both the Supercascode switch and the high temperature packaged SiC JFETs.

cascaded switch↗
DOE OSTI2022

A 300 kA Pulsed Power Supply for LBNF

The Long Baseline Neutrino Facility (LBNF) will produce the worlds most intense neutrino beam. Three series connected magnetic horns will require 5kV, 300kA, 800$\mu$s pulses at a rate of 0.7Hz to focus the beam. Fermilab has designed and built pulsed high current supplies for horns in the past. Pulsed currents of 205 kA for Neutrinos at Main Injector (NuMI - NOvA), focusing a 120 GeV beam, and 170 kA for Booster Neutrino Beam (BNB - MiniBooNE) for focusing an 8 GeV beam have been operational for about 18 years. While the magnetic horns are expected to be replaced, the LBNF horn power supply is expected to last the lifetime of the project, 30 years. A resonant, half sine wave pulser was used for NuMI and BNB and has many practical advantages. The system has impedance limited fault currents by design, albeit large ones. That along with the resonant behavior means that thyristor switches are well suited. Many fault modes of the system have also been calculated. Several circuit changes were incorporated so that a single fault can be tolerated. The supply must be reversable to enable both neutrinos and anti-neutrinos to be produced. These reversal requirements required a significant amount of mechanical design and consideration to allow for quick reversal of all the semiconductors.

43 PARTICLE ACCELERATORS↗