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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Design of CMOS logic gates for TID radiation

The rise time, fall time and propagation delay of the logic gates were derived. The effects of total ionizing dose (TID) radiation on the fall and rise times of CMOS logic gates were obtained using C program calculations and PSPICE simulations. The variations of mobility and threshold voltage on MOSFET transistors when subjected to TID radiation were used to determine the dependence of switching times on TID. The results of this work indicate that by increasing the size of P-channel transistor with respect to the N-channel transistors of the CMOS gates, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in TID radiation.

Attia, John Okyere↗
NASA NTRS2001

New Instrumentation, Patterns and Their Effects on TID Testing of Antifuse-Based FPGAs

TID-induced leakage currents for some families of antifuse-based Field Programmable Gate Array (FPGA) devices are significantly affected by the state of bias of a device's internal nodes; proper consideration of this effect is essential for proper testing of these devices and interpretation of test results. Variations in TID performance based on utilization of different internal logic modules for implementing identical circuits may be utilized by circuit designers for improvement in TID performance by tailoring the placement algorithm. Propagation delays are significantly affected by TID-induced damage for the devices of 54SX32S family.

Kleyner, Igor↗
NASA NTRS2003

TID Effects of High-Z Material Spot Shields on FPGA Using MPTB Data

An experiment on the Microelectronics and Photonics Test Bed (MPTB) was testing lield programmable gate arrays using spot shields to extend the life of some of the devices being tested. It was expected that the unshielded parts would fail from a total ionizing dose (TID) and yet the opposite occurred. The data show that the devices failing from the TID effects are those with the spot shields attached. This effort is to determine the mechanism by which the environment is interacting with the high-Z material to enhance the TID in these field programmable gate arrays.

Hardage, Donna↗
NASA NTRS2023

A Confidence-Based Approach to Including Survivors in a Probabilistic TID Failure Assessment

A probabilistic total ionizing dose (TID) failure assessment is extended to include survivor data, enabling the bounding of failure probability to a desired confidence level (CL) without failure data. The extension provides an avenue for analyzing microelectronics tested for TID without reaching a failure mode, a scenario often encountered by missions utilizing commercial-off-the-shelf (COTS) technologies. Using the type-I censored likelihood formulation and a realistic upper bound on expected device performance, the failure probability space is bounded by confidence contours within the context of a variable environment. The framework accommodates any type of distribution assumed for the part failure or the environment under consideration. Furthermore, the framework can be utilized pre-emptively to plan future device TID tests, minimizing costs while meeting survival requirements. Heritage data may also be used as survivors to further minimize testing costs when parts are from the same lot, but the amount of constraint derived from heritage is limited. Altogether, the framework enables a formal, mathematically rigorous analysis of radiation tolerant devices tested to a maximum dose, as well as flight heritage, in a hardness assurance methodology.

confidence↗
NASA NTRS1985

Quantitative study on dispersion relations of TIDs observed by an HF Doppler array

A quantitative study on the dispersion relation of traveling ionospheric disturbances (TIDs) was performed by using data obtained by an HF Doppler array. Observed data at three stations are digitized continuously with a sampling period of 10 sec. A schematic illustration of a running analysis method is given. Fourier components omega's and their wave vectors k's of the TIDs are calculated from these subset data from three stations by means of the cross-spectrum analysis. Diagrams of horizontal trace velocity V sub ph versus wave period T were also obtained. From these diagrams one can see clear cutoff periods of the internal mode of the atmospheric gravity waves. A morphological classification of the mode of the omega - k and V sub ph - T obtained through one year was performed. The estimation of the horizontal velocity vectors of the thermospheric wind form their dispersion relations was performed also. A key point of the method of obtaining the vectors is to estimate the tilt, in azimuthally different omega - k diagrams, of a resonant branch ascribed to the Brunt oscillations.

Tsutsui, M.↗
NASA NTRS2002

SEE and TID extension testing of the Xilinx XQR18V04 4Mbit radiation hardened configuration PROM

The XQR18V04 was evaluated for single event upset rates using proton and heavy ions. The PROM was demonstrated to be immune to latch-up, as well as to static upset in the flash memory cells, to an LET > 125 MeV/mg/cmz (effective). The PROM was also tested in a dynamic mode, which revealed three distinct error modes: Read Bit Errors, Address Errors, and a Single Event Functional Interrupt (SEW which affected the data output drivers. Saturation cross-sections, and onset thresholds, for these errorinodes were measured at the heavy ion facility at Texas A&M University, and the proton facility at UC Davis. Additional testing was performed at UC Davis and the Cobalt 60 source at McClellan Air Force Base to examine the effect to TID life as a function of power biasing. The PROM demonstrated a 100% improvement in total TID life with an 84% percent decrease in device usage.

FPGA Virtex II SEU↗
NASA NTRS2007

TID and SEE Response of an Advanced Samsung 4G NAND Flash Memory

Initial total ionizing dose (TID) and single event heavy ion test results are presented for an unhardened commercial flash memory, fabricated with 63 nm technology. Results are that the parts survive to a TID of nearly 200 krad (SiO2), with a tractable soft error rate of about 10(exp -l2) errors/bit-day, for the Adams Ten Percent Worst Case Environment.

Oldham, Timothy R.↗
NASA NTRS2013

TID Test Results for 4th Generation iPad(TradeMark)

TID testing of 4th generation iPads is reported. Of iPad subsystems, results indicate that the charging circuitry and display drivers fail at lowest TID levels. Details of construction are investigated for additional testing of components.

SEE↗
NASA NTRS2009

Comparison of TID Response and SEE Characterization of Single and Multi Level High Density NAND Flash Memories

Heavy ion single-event measurements and TID response for 8Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. In general, these commercial high density memories appear to be much less susceptible to SEE and have better TID response compared to older generations of flash memories. The charge pump survived up to 600 krads.

nonvolatile memory↗
NASA NTRS2019

A TID and SEE Characterization of Multi-Terabit COTS 3D NAND Flash

Single-event effects and total ionizing dose testing are described for a 32-layer NAND flash memory, in both SLC and MLC configurations, with special considerations for unique three-dimensional test results. Extraction of three-dimensional heavy-ion test data presents a unique visualization of angular effects in NAND flash. Pattern dependence differences between SLC and MLC mode are noted, along with slightly non-uniform angular cross-section results due to the complex volume. Finally, TID data under different operating and bias conditions shows that the failure point remains the higher-voltage erasure circuitry.

Flash Memory↗
NASA NTRS2021

Total Ionizing Dose (TID) Testing of the PA10 Power Operational Amplifier

This study was undertaken to determine the total ionizing dose (TID) sensitivity of the PA10 Power Op Amp Manufactured by APEX (figure 1), which is a candidate for use on the LDCM TIRS instrument. The test was conducted with interest in both parametric degradation and functional failure in the configuration like that of the TIRS application. (See figure 2). The DUT was irradiated in a stepwise fashion, with parametric and functional degradation measured between steps. The parts were irradiated with gamma rays at a low dose rate (~0.01 rads(Si)/sec.).

total ionizing dose (TID)↗
NASA NTRS1994

Three-parameter tunable Tilt-Integral-Derivative (TID) controller

A feedback control system compensator of the PID type is provided, wherein the proportional component of the compensator is replaced with a tilted component having a transfer function s to the power of -1/n. The resulting transfer function of the entire compensator more closely approximates an optimal transfer function, thereby achieving improved feedback controller. Further, as compared to conventional PID compensators, the TID compensator allows for simpler tuning, better disturbance rejection ratio, and smaller effects of plant parameter variations on closed loop response.

Lurie, Boris J.↗
NASA NTRS2002

SEE and TID of emerging non-volatile memories

We report on the SEE and TID tests of higher density flash memories. Stand-by currents and full functional tests were used to characterize the response of radiation effects.

single-event upset non-volatile memories↗
NASA NTRS2006

Low Temperature (30 K) TID Test Results of a Radiation Hardened 128 Channel Serial-to-Parallel Converter

This viewgraph presentation reviews the low temperature, Total Ionizing Dose (TID) tests of radiation hardened serial to parallel converter to be used on the James Webb Space Telescope. The test results show that the original HV583 level shifter - a COTS part -was not suitable for JWST because the supply currents exceeded specs after 20 krad( Si) .The HV584 - functionally similar to the HV583 -was designed using RHBD approach that reduced the leakage currents to within acceptable levels and had only a small effect on the level-shifted output voltage.

Meyer, Stephen↗