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Properties of HPK UFSD after neutron irradiation up to 6e15 n/cm 2
In this article we report results from a neutron irradiation campaign of Ultra-Fast Silicon Detectors (UFSD) with fluences of 1e14, 3e14, 6e14, 1e15, 3e15 and 6e15 neq/cm 2 . The UFSD used in this study are circular 50 μm thick Low-Gain Avalanche Detectors (LGAD), with a 1.0 mm diameter active area. Hamamatsu Photonics (HPK), Japan, produced the UFSD with pre-irradiation internal gain in the range 5–70 depending on the bias voltage. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90 Sr β-source. The leakage current, internal gain and the timing resolution were measured as a function of bias voltage at -20 °C and -30 °C. The timing resolution of each device under test was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction discriminator (CFD) method for both. The dependence of the gain upon the irradiation fluence is consistent with the acceptor removal mechanism; at -20 °C the highest gain decreases from 70 before radiation to 2 after a fluence of 6e15 n/cm 2 . Consequently, the timing resolution was found to deteriorate from 20 ps to 50 ps. The results indicate that the most accurate time resolution is obtained varying with fluence the CFD value used to determine the time of arrival, from 0.1 for pre-irradiated sensors to 0.6 at the highest fluence. Key changes to the pulse shape induced by irradiation, i.e. (i) the contribution of charge multiplication not limited to the gain layer zone, (ii) the shortening of the rise time and (iii) the reduced pulse height, were compared with the WF2 simulation program and were found to be in agreement.
State-of-the-art and evolution of UFSD sensors design at FBK
Over the past few years, there has been growing interest in the development of silicon sensors able to simultaneously measure accurately the time of passage and the position of impinging charged particles. In this contribution, a review of the progresses in the design of UFSD (Ultra-Fast Silicon Detectors) sensors, manufactured at the FBK (Fondazione Bruno Kessler) Foundry, aiming at tracking charged particles in 4 dimensions, is presented. The state-of-the-art UFSD sensors, with excellent timing capability, are planned to be used in both ATLAS and CMS experiments detector upgrade, in order to reduce the background due to the presence of overlapping events in the same bunch crossing. The latest results on sensors characterization including time resolution, radiation resistance and uniformity of the response are here summarized, pointing out the interplay between the design of the gain layer and the UFSD performances. The research is now focusing on the maximization of the sensor fill factor, to be able to reduce the pixel size, exploring the implementation of shallow trenches for the pixel isolation and the development of resistive AC-coupled UFSD sensors. In conclusion, a brief review on research paths tailored for detection of low energy X-rays or for low material budget applications is given.
Experimental Study of Acceptor Removal in UFSD
The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. In this study, the effect is tested both with capacitance–voltage, C–V, measurements of the doping concentration and with measurements of charge collection, CC, using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C–V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.
Properties of FBK UFSDs after neutron and proton irradiation up to 6 ∙ 10 15 n eq /cm 2
Not provided.
Picosecond Timing Resolution Measurements of Low Gain Avalanche Detectors with a 120 GeV Proton Beam for the TOPSiDE Detector Concept
This paper presents results that take a critical step toward proving 10 ps timing resolution’s feasibility for particle identification in the TOPSiDE detector concept for the Electron-Ion Collider. Measurements of LGADs with a thickness of 35 μm and 50 μm are evaluated with a 120 GeV proton beam. The performance of the gain and timing response is assessed, including the dependence on the reverse bias voltage and operating temperature. The best timing resolution of UFSDs in a test beam to date is achieved using three combined planes of 35 μm thick LGADs at -30°C with a precision of 14.3 ± 1.5 ps.