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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Formatting and V&V of Consistent 238,240−24 2Pu $\overline{v}_p$ Evaluated Mean Values and Covariances

This report is in answer to the Nuclear Criticality Safety Program FY24 quarter 4 milestone that requires: “Format and V&V nu-bar means and covariances” for 238,240-242 Pu average prompt fission neutron multiplicities, $\overline{ν}$ p , that were obtained by a consistent evaluation leveraging the fission-event generator CGMF and a detailed uncertainty quantification of experimental data. It is described how nuclear data mean values and covariances were formatted using ENDFtk. Implementing the new 238,240-242 Pu $\overline{ν}$ p into the ENDF/B-VIII.1β 4 library leads to only small overall changes in criticality values of the Jezebel, Dirty Jezebel, Jupiter-001, Jupiter-002, EUCLID 3x2 and EUCLID 8x1 critical assemblies. Simulated k eff uncertainties due to $\overline{ν}$ p covariances change only little if cross-isotope covariances are considered or not for those assemblies with low percentage content of minor Pu isotopes. However, for the Dirty Jezebel critical assembly, that has a sizeable 240 Pu and non-negligible 241 Pu content, the simulated k eff uncertainties due to considering or neglecting cross-isotope $\overline{ν}$ p covariances is 443 versus 374 pcm.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

V‐Groove Si Nanopatterning for the Direct Epitaxy of Orientation‐Patterned III–V Nonlinear Optical Crystals

Orientation‐patterned (OP) III–V semiconductors—used as quasi‐phase‐matched crystals for nonlinear optics applications—are typically epitaxially grown on expensive III–V substrates using a complex process requiring three separate epitaxy steps. In this work, a method is demonstrated for growing orientation‐patterned III–V crystals on Si substrates through V‐groove nanopatterning and a single epitaxial growth. V‐groove Si allows for suppression of random antiphase domain formation that is typical of III–V growth on (001)‐oriented Si through the use of (111)‐faceted trenches patterned on (001)‐oriented Si substrates. By alternating the directions of the V‐groove trenches between [110] and [10], antiphase boundaries can be selectively induced at the boundaries between the two directions of trenches due to the difference in symmetry between the III–V material and Si. This approach allows for a greatly simplified process for growing OP‐III‐Vs and more broadly is a new, robust approach for precisely patterning antiphase boundaries of arbitrary shape and length scales down to 50 nm.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Electroanalytical characterization of Np( VI )/Np( V ) redox in a pentadentate ligand environment and stabilization of [Np V O 2 ] + by hydrogen bonding

The redox chemistry of the actinyl cations (AnO 2 n+ ) heavily influences their reactivity and speciation in solution, but the redox properties of the actinyls in non-aqueous media have received far less attention than they deserve. Here, the non-aqueous electrochemistry of a chemically reversible Np(VI)/Np(V) redox manifold is reported in both protic (CH 3 OH) and aprotic (CH 3 CN) organic media. Using a neutral Np(VI) complex supported by a chelating and strongly donating pentadentate ligand that was fully characterized in prior work, a clean Np(VI)/Np(V) redox couple was found to be accessible under ambient conditions. Coupled electrochemical and spectroscopic studies, as well as simulations of cyclic voltammetry data, confirm the 1e− nature of this couple and establish it to be chemically reversible and nearly electrochemically reversible as well. Bulk electrolysis of a solution of the neutral Np(VI) complex facilitated isolation of the corresponding anionic and monomeric Np(V) species. Data from X-ray diffraction analysis as well as optical and vibrational spectroscopies provide strong evidence in support of metal-centered reduction and the Np(V) oxidation state, findings that are in accord with the measured reduction potentials. Distinctive hydrogen bonding interactions between the terminal (yl) oxo groups and water molecules appear to stabilize the isolated Np(V) species in the solid state, providing insight into the features that afford the uncommon chemically reversible redox encountered in this system.

Mikeska, Emily R.↗
DOE OSTI2024

Jet cone radius dependence of R AA and v 2 at PbPb 5.02 TeV from JEWEL+T R ENTo+v-USPhydro

We combine, for the first time, event-by-event T R ENTo initial conditions with the relativistic viscous hydrodynamic model v-USPhydro and the Monte Carlo event generator JEWEL to make predictions for the nuclear modification factor R AA and jet azimuthal anisotropies v n { 2 } in $\sqrt{s_{NN}}$ = 5.02 TeV PbPb collisions for multiple centralities and values of the jet cone radius R. The R-dependence of R AA and v 2 { 2 } strongly depends on the presence of recoiling scattering centers. We find a small jet v 3 { 2 } in mid-central collisions and consistent results in wide jet p T regions and centralities with ATLAS data.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with V th < -6 V and High on-Current

In this work, a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) is demonstrated that operates in an Accumulation Channel rather than a Transfer Doping regime. The FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated Al 2 O 3 is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for the formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of Al 2 O 3 . Completed devices with gate/channel length of 1 µm demonstrate record threshold voltage < -6 V with on-current > 80 mA mm -1 . Carrier density and mobility figures extracted by CV analysis indicate a high 2D charge density of ≈ 2 × 10 12 cm -2 and increased hole mobility of 110 cm 2 V -1 s -1 in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a powerful new strategy to greatly improve carrier mobility and enable enhanced high power and high frequency diamond transistor performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

𝐵 → 𝜌⁢ℓ⁢$\bar{v}$ Resonance Form Factors from 𝐵→ 𝜋⁢𝜋⁢ℓ⁢$\bar{v}$ in Lattice QCD

The decay 𝐵 → 𝜌⁢ℓ⁢$\bar{v}$ is an attractive process for determining the magnitude of the smallest Cabibbo-Kobayashi-Maskawa matrix element, |𝑉 𝑢⁢𝑏 |, and can provide new insights into the origin of the long-standing exclusive-inclusive discrepancy in determinations of this standard-model parameter. This requires a nonperturbative QCD calculation of the 𝐵 → 𝜌 form factors 𝑉, 𝐴 0 , 𝐴 1 , and 𝐴 12 . The unstable nature of the 𝜌 resonance has prevented precise lattice QCD calculations of these form factors to date. Here, we present the first lattice QCD calculation of the 𝐵 → 𝜌 form factors in which the 𝜌 is treated properly as a resonance in 𝑃-wave 𝜋⁢𝜋 scattering. To this end, we use the Lellouch-Lüscher finite-volume formalism to compute the 𝐵 → 𝜋⁢𝜋 form factors as a function of both momentum transfer and 𝜋⁢𝜋 invariant mass, and then analytically continue to the 𝜌 resonance pole. This calculation is performed with 2 + 1 dynamical quark flavors at a pion mass of approximately 320 MeV, and demonstrates a clear path toward results at the physical point.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

SBIR Phase I Final Technical Report MODULAR NEUTRON DETECTOR ARRAY FOR PROTEIN CRYSTALLOGRAPHY BEAM LINES Award Number DE-SC0024828 Prepared for U.S. Department of Energy, Office of Science, SC-1 For the Period July 22, 2024 – April 21, 2025 Report Date November 22, 2024 Submitted by Vivek V. Nagarkar, Ph.D., Principal Investigator Report Contributors Mr. Nicholas Anastasi, Dr. Charles Sosa, Dr. Jun Wang, Dr. Lakshmi Soundara Pandian and Dr. Vivek V. Nagarkar

Explore the source record for details and available documents.

Nagarkar, Vivek V.↗
DOE OSTI2025

Effect of vanadium on phase composition and hard magnetic properties of as-solidified and heat-treated Sm–Fe–(Ti,V) alloys

Although the intrinsic magnetic properties of Ti-stabilized Sm(Fe,Co,Ti) 12 compounds exhibit potential of excellent rare-earth-lean permanent magnets, it has been much easier to realize large coercivities with the isostructural compounds stabilized by either V or by certain combinations of Ti and V. To elucidate the influence of V on the microstructure and magnetic properties, a series of Sm 8.1 Fe 78.4 (Ti 1-x V x ) 13.5 alloys was studied after arc-melting and annealing at 850–1000 °C. The alloys were found to fall into three groups. For x ≤ 0.2, solidification generates mostly the Sm(Fe,Ti,V) 12 phase, but annealing converts at least part of it into the non-magnetic Sm(Fe,Ti,V) 11 and the magnetically soft Sm 2 (Fe,Ti,V) 17 phases. For 0.2 < x < 0.6, the alloys solidify into a near-equilibrium mixture of the Sm(Fe,Ti,V) 12 , TiFe 2 and Sm-rich phases. For x ≥ 0.6, solidification generates large fractions of α-Fe solid solution and Sm-rich phases; an annealing step is necessary to complete the formation of Sm(Fe,Ti,V) 12 phase. Also, for x ≥ 0.6 the temperature below which the Sm(Fe,Ti,V) 12 phase is stable decreases with x, as does the fraction of this phase formed during solidification. Here, the differences between these three groups of alloys suggest different strategies for developing hard magnetic properties, with the likelihood of a success increasing with increasing x. For x ≥ 0.6, heat treatment alone is demonstrated to generate a microstructure of micron and submicron Sm(Fe,Ti 1-x V x ) 12 crystallites separated by a Sm-rich phase and exhibiting a coercivity with values up to 3.5 and 5.7 kOe for x = 0.8 and 1.0, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Phosphate-modulated transformation of Sb(V)-bearing ferrihydrite under microbial iron- and sulfate-reducing conditions

Antimony (Sb) is a toxic metalloid that poses environmental risks in terrestrial and aquatic systems. The fate of the Sb(V) oxyanion, Sb(OH) 6 − , is governed by complex biogeochemical processes, including immobilization by ferric (Fe(III)) oxides, reduction by sulfide, and the less-explored competitive adsorption with other anions such as phosphate (PO 4 3− ). Here, this study investigates the interplay between such mechanisms in controlling the behavior of Sb(V) associated with ferrihydrite (Fh) under Fe(III)- and sulfate-reducing conditions, with a particular emphasis on the role of phosphate in influencing Sb(V) mobility and transformation. Anoxic reactors that contained Sb(V)-coprecipitated Fh, varying PO 4 3− concentrations (0, 0.2, and 2 mM), and sulfate, were inoculated with a microbial community sourced from Sb-contaminated soil. Additionally, abiotic reactors with either Sb(V)-adsorbed or Sb(V)-coprecipitated Fh and different PO 4 3− loadings (0–100 mM) were created to investigate the competitive adsorption mechanisms in the absence of microbial activity. Results from the abiotic reactors suggest that Sb(V) is likely incorporated into the Fh structure, with only minor amounts remaining surface-bound and extractable by PO 4 3− . In the biotic reactors, microbial Fe(III) and sulfate reduction were more extensive in the presence of PO 4 3− . At 0.2 mM PO 4 3− , microbial activity transformed Fh into siderite and led to the complete reduction of Sb(V) to Sb(III) as stibnite (Sb 2 S 3 ). At 2 mM PO 4 3− , the greater coverage by PO 4 3− stabilized Fh and decreased the extent of both Fe(III) and Sb(V) reduction, and shifted the reduced products to mackinawite and Sb(III) adsorbed onto Fh, in addition to stibnite formation. This study demonstrates that while PO 4 3− may not directly compete with Sb(V) for sorption sites, it can influence Sb mobility in Fe(III)- and sulfate-reducing environments by enhancing microbial activity and altering the mineralization pathways.

Microbial Fe(III) and sulfate reduction↗
DOE OSTI2024

In-situ hydrogen microstructural characterization of Si heterojunction passivation: Addressing V OC degradation and mitigation pathways

Si heterojunction (SHJ) solar cells have demonstrated record efficiency >27%, approaching the theoretical limit of ≈ 29%, primarily due to best surface/interface defect passivation provided by deposited thin layers of hydrogenated amorphous silicon (a-Si:H). Such excellent surface/interface passivation reduces recombination loss and result in >100 mV improvement of cell open circuit voltage (V OC ) to ≈ 750 mV, thus the cell efficiency. However, fielded SHJ modules exhibit loss of V OC and hence efficiency over time in years, presumably due to degradation related to a-Si:H layers. This adversely affects the technology’s market acceptance, and levelized cost of energy (LCOE). It is hypothesized that the origin of a-Si:H degradation is somehow related to the presence of weak Si–Si bonds and hydrogen in a-Si:H films. The objective of this project is to test this hypothesis by directly measuring chemical and structural changes occurring within SHJ component layers and solar cells. This is achieved by developing an innovative in-situ Fourier transform infrared (FTIR) spectrometry apparatus to monitor hydrogen microstructural changes occurring within amorphous silicon and decipher hydrogen evolution kinetics over time when samples are exposed to heat and/or light stress. These in-situ measured hydrogen microstructural changes are correlated to the changes in effective minority carrier lifetime (τ eff ), implied V OC (iV OC ), surface recombination velocity (S), and cell V OC . These mechanistic understandings will provide critical guidance to mitigate the V OC -driven degradation of SHJ solar cell performance. Passivation optimization and degradation analysis of individual SHJ component structures were achieved through systematic deposition of three symmetric structures and the completed SHJ solar cell structure. The three symmetric structures used were intrinsic a-Si:H [(i)a-Si:H] layers in a bilayer structure, intrinsic and p-type doped stacked layers [(i-p)a-Si:H] representing the front heterojunction in the SHJ cell, and intrinsic and n-typed doped stacked layers [(i-n)a-Si:H] representing the back-side back surface field (BSF) in the SHJ cell. State-of-the-art passivation qualities are demonstrated by a champion iV OC of 740 mV for the (i)a-Si:H layers, and the (i-n)a-Si:H symmetric structure. A 725 mV iV OC is observed for the (i-p)a-Si:H symmetric structure. These symmetric passivated SHJ component structures were subsequently subjected to different accelerated lifetime (ALT) stressors to identify which conditions contribute the most to iV OC degradation. Degradation of the thin (10 nm) (i)a-Si:H passivation layers without any additional overlying layers is minimal; complexity of this study arises due to unavoidable surface oxidation of (i)a-Si:H layer during most of the stress application, which is likely irrelevant for a full SHJ cell configuration with overlying protective layers. The iV OC degradation of symmetric structures is found to occur primarily at the (i-p)a-Si:H passivation stack under dark heat stress with associated hydrogen loss from the (p)a-Si:H layer. An activation energy for increase in S (defect creation) of 0.65 eV can be correlated to the activation energy of ≈ 0.4 eV for hydrogen loss from the (i-p)a-Si:H stack. This also suggests the presence of weakly bonded hydrogen in the (p)a-Si:H films, which effuses out of the film stack at such low activation energy. When light and heat stress are applied together, similar hydrogen loss from (i-p)a-Si:H stack is observed, however, does not appreciably degrade iV OC or increase S. This is an important result and departure from direct correlation between hydrogen loss and defect creation. This perhaps indicates additional defect chemistries or annealing that might be occurring in the presence of light requiring further detailed defect measurements. The full SHJ cell structure used for this project is depicted in Fig.1(d). SHJ cells with an initial V OC ≈ 700 mV were fabricated and subjected to similar ALT stress conditions. Cell V OC is found to degrade the most under dark heat stress and is confirmed by observed hydrogen migration out of the (i-p)a-Si:H stack. However, hydrogen cannot escape from the cell stack, it accumulates near the (p)a-Si:H/ITO contact interface, where ITO acts as a barrier preventing hydrogen loss. Furthermore, light-heat combined stress does not degrade V OC appreciably, confirming the occurrence of a defect annealing process.

14 SOLAR ENERGY↗
DOE OSTI2025

Electrochemical Phase Engineering of γ′-V 2 O 5 Thin Films for Sodium-Ion Storage Electrodes

V 2 O 5 is a promising sodium-ion cathode material due to its high theoretical capacity (147 mAh/g) and working voltage (3.3 V vs Na/Na + ). Among its various crystal phases, γ′-V 2 O 5 has a large interlayer spacing, ensuring the reversible insertion–extraction of sodium ions. However, current synthesis methods for γ′-V2O5 require high temperatures (>600 °C) and toxic chemicals (NO 2 BF 4 ), which make the preparation demanding. Herein, we put forward an electrochemical phase engineering method combining thermal annealing and electrochemistry to easily prepare thin-film γ′-V 2 O 5 . Electrochemical characterization shows near-ideal performance as a thin-film cathode material for sodium-ion batteries. It shows a measured initial capacity of 152 mAh/g, a high working voltage (3.3 V vs Na + /Na), and an exceptional Coulombic efficiency of 98%, significantly surpassing previously reported values (∼50% CE). Cyclic voltammogram and galvanostatic capacity curves confirm the sodium insertion–deinsertion, which remains stable at 2 C. The γ′-V 2 O 5 thin film has electrochemical performance similar to γ′-V 2 O 5 powder, indicating another workable morphology of γ′-V 2 O 5 for sodium-ion batteries.

batteries↗
DOE OSTI2024

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.

Electroluminescence↗
DOE OSTI2024

Pure edge-dislocation half-loops in low-temperature Ga⁢N for V-defect formation

Lateral injection of carriers through semipolar crystallographic planes into c-plane QWs is one of the new frontiers in III-N light-emitting diodes (LEDs), especially for long wavelengths. Strategic use of V-defects has proven to be the most promising method for lateral injection, and creating optimal V-defect structure and density is an important research area for reducing forward voltage and increasing wall plug efficiency. Here, in this article, we present a novel method for forming V-defects in nominally unstressed low-temperature Ga⁢N through the generation of pure edge-dislocation half-loops. We present a detailed material science analysis of the loops via scattering-contrast electron microscopy. The loops have pure-edge character with Burgers vector 1/3 ⁢⟨$11\bar{2}0$⟩, and form in a sessile orientation on {$11\bar{2}0$} a-planes. The two arms of the loops are inclined such that the extra half-planes face down toward the growth substrate. The dislocation loops can be used to intentionally form V-defects through conditions of kinetically limited growth: these conditions also favor nucleation of V-defects at ∼100% of other threading dislocations in the Ga⁢N templates. Patterned sapphire substrates (PSS) are one of the most important substrates for III-N LED growth because of their superior light extraction. However, due to its low threading dislocation density, PSS have not been used extensively for V-defect LEDs. This work provides a pathway for improved control of V-defect formation and density on LEDs grown on sapphire with the goal of enabling uniform lateral injection in these V-defect engineered LEDs with low forward voltage, including PSS for high light extraction.

LEDs↗
DOE OSTI2024

$K^0_S$ meson production in inelastic p+p interactions at 31, 40 and 80 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$ beam momentum measured by NA61$/$SHINE at the CERN SPS

The yields of $K^0_S$ mesons have been measured in inelastic p+p interactions at incident projectile momenta of 31, 40 and 80 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$ ($\sqrt{s_{NN}}=7.7, 8.8$ and 12.3 $\text {Ge}\hspace{-1.00006pt}\text {V}$, respectively). The data were recorded by the NA61$/$SHINE spectrometer at the CERN Super Proton Synchrotron and the $K^0_S$ mesons identified via their decays into $\pi ^{+} \pi ^{-}$ pairs. Double-differential distributions are presented as function of transverse momentum and rapidity. The mean multiplicities of $K^0_S$ mesons were determined to be $(5.95 \pm 0.19 (stat) \pm 0.30 (sys)) \times 10^{-2}$ at 31 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$, $(7.61 \pm 0.13 (stat) \pm 0.43 (sys)) \times 10^{-2}$ at 40 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$ and $(11.58 \pm 0.12 (stat) \pm 0.55 (sys)) \times 10^{-2}$ at 80 $\text {Ge}\hspace{-1.00006pt}\text {V}\!/\!c$. The results on $K^{0}_{S}$ production are compared with the production of charged kaons in corresponding reactions and with model calculations (Epos1.99, SMASH 2.0 and PHSD) as well as with published data from other experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

42 ENGINEERING↗
DOE OSTI2026

Discovering novel therapeutic V H Hs for emerging viruses: perspectives from VEEV selection strategies

Introduction: Evolution or emergence of a new viral variant is a significant public health concern. Alphaviruses, such as Venezuelan equine encephalitis virus (VEEV), are mosquito-borne viruses which are becoming more prevalent due to expansion of vector habitats. Despite this, there are currently no antiviral therapies or FDA-approved vaccines available to treat or prevent VEEV infection. The increased prevalence of such viruses provides opportunities for novel variants to evolve. Key therapeutic molecules that could be developed against viral pathogens are recombinant antibodies or antibody fragments, such as the variable heavy domain of heavy chain antibodies (V H Hs). Methods: In vitro selections offer a promising pathway for identification of therapeutic antibodies, here we explored isolation of V H Hs using phage and yeast display methodology with three antigen formats 1) recombinant E2, 2) linear peptides of E2, selected based on molecular dynamics analysis, and 3) UV inactivated virus. Results: Here we report four novel “human” V H Hs which bind to the VEEV E2 protein selected using different strategies that include both computational and biochemical design of suitable antigens and whole virus selections. These V H Hs have distinct complementarity-determining regions (CDRs). Multiple VHHs bind to the VEEV viral particles in ELISAs, and we report the peptide epitope recognized by these V H Hs. Discussion: Though non-neutralizing, these V H Hs bind to and sequester VEEV viral particles preventing infection, demonstrating the potential of these V H Hs to perform viral “sponging” which represents a novel therapeutic approach. The selection strategies we report may have applications to further antibody developments against other viruses.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2024

Self-compensation of group-V acceptors in CdTe

Cadmium Telluride is at the core of an important thin-film technology for photovoltaics that is already commercially available, yet the CdTe-based solar cell efficiency remains limited at 22%, well below the theoretical limit of ~30%. Increasing the hole concentration is crucial for higher efficiency, and group-V elements such as As, P, and Sb are potential dopants as they are shallow acceptors. Nevertheless, group-V doped p-type CdTe often exhibits low doping activation, and the compensation source remains debated. Here, we performed hybrid density functional calculations with spin-orbit coupling to investigate possible sources of hole compensation in group-V doped CdTe. First, regarding possible self-compensation of the group-V dopants, we find that the formation of AX centers is unlikely since they are found to be unstable relative to the shallow acceptor forms. However, if the group-V dopants come in during growth (such as dimer molecules As2, P2, and Sb2), we find that the impurity atoms, which would occupy nearest neighbor sites, maintain the V-V bonds, limiting the hole density. For the native defects, our study reveals that Cd interstitial is the lowest energy donor defect in p-type CdTe. Still, it has a small migration barrier of 0.5 eV, making it highly mobile and unstable at room temperature. The Te vacancy is the next lowest formation energy donor. The migration barrier of 1.4 eV indicates that the Te vacancy is stable at room temperature. The antisite CdTe is also a donor, with low formation energy and stable at room temperature, potentially limiting the hole concentration. Our results, therefore, shed light on possible compensation centers and some guidance on how to avoid them.

14 SOLAR ENERGY↗