Effect of reabsorbed recombination radiation on the diffusion length of minority carriers in wide-band-gap semiconductors
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Von Roos, O.↗
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High voltage, high current Schottky barrier solar cell
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.
Stirn, R. J.↗
Research and development study on wide band-gap semiconductor films Interim report, Jun. 1967 - Nov. 1968
Structural, optical, and electrical properties of AlSb, AlAs, AlP, AlN, and BN thin films deposited by sputtering and evaporation
Francombe, M. H.↗
Determination of deep level capture cross sections in wide band-gap semiconductors by means of an electron beam
The paper presents a general theory for the determination of the short circuit current generated by a sinusoidally amplitude-modulated electron beam in the presence of recombination centers with an arbitrary number of charge states. It is shown that a measurement of the coherent phase shift with respect to the incident beam as a function of the modulation frequency of the beam ascertains the magnitudes of electron and hole capture cross sections. The surface exposed to the electron beam must have a negligible surface recombination velocity for the measurements to be unambiguous.
Von Roos, O.↗
Advanced Radiation Detectors and Detector Systems Research
Real‐time awareness of space radiation is critical for missions beyond LEO. Missions to the Moon, Mars, Near‐Earth‐Objects (NEOs), inner and outer planets, as well as other destinations in space, will require embedded instrumentation to provide feedback for “smart”, adaptive control systems. Precision instrumentation will also be needed to provide improved data for space radiation modeling and space weather forecasting and awareness. Compact instrumentation on small platforms such as CubeSats and other small space‐faring vehicles will provide a better understanding of the space radiation environment by supplying data from multiple locations in space where information is yet unknown. Compact integrable solid‐state detectors with low noise and high tolerance of operation in a radiation environment are enabled by the application of Wide Band Gap semiconductors as radiation detectors. NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop supporting technologies that enable improved instruments for space science missions. A variety of radiation detectors are under development, such as silicon carbide semiconductor detectors, for applications to space science, lunar prospecting, and fission power systems.
Field and particle detectors↗
Interconnection of Semiconductor Devices in Extreme Environment Microelectronic Integrated Circuit Chips
A process of fabrication and the resulting integrated circuit device is made of patterned metal electrical interconnections between semiconductor devices residing on and forming extremely harsh environment integrated circuit chips. The process enables more complicated wide band gap semiconductor integrated circuits with more than one level of interconnect to function for prolonged time periods (over 1000 hours) at much higher temperatures (500 C).
Spry, David J.↗
Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport
Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths, In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors.The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk II-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology. The electrical and optical properties of semiconductor materials depend on the native point defects, (the deviation from stoichiometry), and the impurity or dopant distribution. To date, the bulk growth of ZnSe substrates has been plagued with problems related to defects such as non-uniform distributions of native defects, impurities and dopants, lattice strain, dislocations, grain boundaries, and second phase inclusions which greatly effect the device performance. In the bulk crystal growth of some technologically important semiconductors, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials.
Su, Ching-Hua↗
Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport
Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths. In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors. With an energy gap of 2.7 eV at room temperature, and an efficient band- to-band transition, ZnSe has been studied extensively as the primary candidate for a blue light emitting diode for optical displays, high density recording, and military communications. By employing a ternary or quaternary system, the energy band gap of II-VI materials can be tuned to a specific range. While issues related to the compositional inhomogeneity and defect incorporation are still to be fully resolved, ZnSe bulk crystals and ZnSe-based heterostructures such as ZnSe/ZnSeS, ZnSe/ZnCdSe and ZnCdSe/ZnSeS have showed photopumped lasing capability in the blue-green region at a low threshold power and high temperatures. The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk H-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology.
Su, Ching-Hua↗
Graded junction termination extensions for electronic devices
A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.
Merrett, J. Neil↗
Graded junction termination extensions for electronic devices
A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.
Merrett, J. Neil↗
Ilmenite as Dual-Use Material
This paper addresses the subject of dual-use space technology transfer of a novel, non-traditional material termed ilmenite, found in a large percentage in the moon rocks brought back by NASA's APOLLO missions. The paper is somewhat premature in the sense that though the material as a mineral has been known for a long time, very little is known about pure single crystal ilmenite and hence few applications have been demonstrated. Yet, in another sense, it is very timely due to the fact that ilmenite promises to be a very interesting competition to silicon, silicon carbide and other compound semiconductors, especially those that are employed in high power, high temperature and large data storage/retrieval applications. It seems to be an excellent example of a small investment-high return situation. While some of the applications of this material - for production of oxygen, for instance - have been well-known, electronic applications have received relatively little attention. One reason for this was the fact that growth of single crystal ilmenite requires precise process conditions and parameters. We believe for the first time these have been determined in the Center for Electronic Materials, Texas A&M University. The work being done at Texas A&M University and Prairie View A&M University (supported by Battelle Pacific Northwest Laboratories and the Center for Space Power) indicates the excellent potential this material has in space as well as in terrestrial applications. To mention a few: as a wide band gap semiconductor it has applications in high temperature, high power situations, especially when heat dissipation is a problem such as may occur in the Space Station; the possibility of this material radiating in the blue region, it has immense applications in optoelectronics; as a material with a high density of highly directional d-bands, it lends itself to novel processing conditions and perhaps even to 'tunability' of physical parameters; as a potential scintillating material, it has possible applications as a sensor in waste management; as an oxygen sensor it has possible applications in automotive electronics; and as a radiation resistant material, it has obvious applications in the space environment. Results - experimental and theoretical - obtained so far in our laboratories will be reported with particular emphasis on the transfer of technology involving this fascinating material.
Kumar, A. A.↗
Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport
The studies on the crystal growth and characterization of II-VI wide band gap compound semiconductors, such as ZnTe, CdS, ZnSe and ZnS, have been conducted over the past three decades. The research was not quite as extensive as that on Si, III-V, or even narrow band gap II-VI semiconductors because of the high melting temperatures as well as the specialized applications associated with these wide band gap semiconductors. In the past several years, major advances in the thin film technology such as Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) have demonstrated the applications of these materials for the important devices such as light-emitting diode, laser and ultraviolet detectors and the tunability of energy band gap by employing ternary or even quaternary systems of these compounds. At the same time, the development in the crystal growth of bulk materials has not advanced far enough to provide low price, high quality substrates needed for the thin film growth technology.
Su, Ching-Hua↗
Development of aluminum alloy compounds for electroluminescent light sources
Aluminum alloy compounds as wide band gap semiconductors for electroluminescent light sources
Chicotka, R. J.↗
Development of gallium aluminum phosphide electroluminescent diodes
Work done on the development of gallium aluminum phosphide alloys for electroluminescent light sources is described. The preparation of this wide band gap semiconductor alloy, its physical properties (particularly the band structure, the electrical characteristics, and the light emitting properties) and work done on the fabrication of diode structures from these alloys are broadly covered.
Chicotka, R. J.↗
Carbon Nanotube Based Molecular Electronics
Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.
Srivastava, Deepak↗
Development of SiC Large Tapered Crystal Growth
Majority of very large potential benefits of wide band gap semiconductor power electronics have NOT been realized due in large part to high cost and high defect density of commercial wafers. Despite 20 years of development, present SiC wafer growth approach is yet to deliver majority of SiC's inherent performance and cost benefits to power systems. Commercial SiC power devices are significantly de-rated in order to function reliably due to the adverse effects of SiC crystal dislocation defects (thousands per sq cm) in the SiC wafer.
Neudeck, Phil↗
Body of Knowledge for Silicon Carbide Power Electronics
Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.
Silicon Carbide Power Electronics↗
On the Moon to Stay: Challenges Presented to Power Electronics Technology by Sustained Operations on the Lunar Surface
NASA’s Artemis Program seeks not only to return humans to the Moon for the first time since the 1970’s but also to provide the technological basis for infrastructure that will enable permanent and expanding scientific and industrial exploitation of the Lunar surface. The primary purpose of this infrastructure is to generate and distribute power to a diverse and growing range of scientific and industrial assets, and the keys to success for this function are power management and control circuits that are highly reliable and maintainable for a decade of operation in the extreme thermal, radiation, and dust environment of the Lunar surface. While various combinations of wide band gap semiconductors, electronic devices, circuit topologies, and shielding schemes have been successfully developed for mission environments ranging from low Earth orbit to the Jovian system, power management technology has not been optimized to meet the full combination of mission requirements for the Lunar surface. To accomplish this, NASA requests the dedicated focus of the power electronics industry.
semiconductors↗