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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Nitrogen p-type doping in polycrystalline zinc selenide telluride films

Nitrogen-doped zinc selenide telluride (N:ZnSe x Te 1−x ) is of interest because it is one of the widest-gap II–VI semiconductors that can still be doped p-type with reasonably high hole concentrations. We sputter deposit N:ZnSe x Te 1−x films, varying Se/(Se + Te), or x, from 0 to 0.7, N 2 flow rate from 0.25 to 0.75 sccm, and substrate temperature from 250 to 370 °C. Increasing x from 0 to 0.39 at the optimal temperature of 370 °C and N 2 flow rate of 0.5 sccm leads to 1.3 atomic % nitrogen incorporation and wurtzite phase stabilization. Such doping and alloying increases hole concentration from 3 × 10 18 cm −3 to 3 × 10 19 cm −3 , although mobility drops from 0.4 to 0.02 cm 2 V −1 s −1 . Our sputtered N:ZnSe 0.38 Te 0.62 has an absorption onset 0.1 eV greater than the ZnTe value of 1.87 eV. Increasing x from 0 to 0.51 enhances transmittance by moving absorption onset from 1.87 to 2.11 eV with diminished band gap bowing likely due to disorder, and increases the work function from 5.12 to 5.42 eV. This combination of tunable properties makes sputtered N:ZnSe x Te 1−x desirable for transparent p-type contacts in polycrystalline Cd(Se,Te) optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Design of Zn Chalcogenide Shells for Emissive Ga-Rich In 1– X Ga X As Quantum Dots Synthesized in Molten Salts

Colloidal quantum dots (QDs) have seen expanded applications in optoelectronics from visible to near-infrared (NIR) wavelengths. However, the options for QDs with bright and size-tunable emission in the NIR region are mostly limited to heavy-metal-based (Pb, Cd, Hg) semiconductors. Here, Ga-rich In 1–X Ga X As QDs with zinc chalcogenide shells are demonstrated as candidates for NIR emitters. Based on new developments in inorganic molten salt chemistry, we synthesized colloidal In 1–X Ga X As QDs containing up to 85% gallium with high crystallinity based on Raman and XRD analyses. Zinc selenide and sulfide shells with different morphologies were grown on In 1–X Ga X As QDs by controlling the Zn precursor chemistry. Despite the nominally reduced lattice mismatch in the In 1–X Ga X As/ZnSe heterostructure, a ZnS shell was found to be a much more effective passivation material: In 1–X Ga X As/ZnS core–shell QDs show a photoluminescence quantum yield (PL QY) of about 30% versus 11% for ZnSe shells. In conclusion, based on the analysis of PL decay and transient absorption (TA) dynamics, we surmise that electron trapping is the major reason for efficiency loss, providing a clear heterostructure design principle for realizing efficient NIR-emitting In 1–X Ga X As QDs.

Electron trapping↗
DOE OSTI2020

Single-pass Cr:ZnSe amplifier for broadband infrared undulator radiation

An amplifier based on a highly-doped chromium zinc-selenide (Cr:ZnSe) crystal is proposed to increase the pulse energy emitted by an electron bunch after it passes through an undulator magnet. The primary motivation is a possible use of the amplified undulator radiation emitted by a beam circulating in a particle accelerator storage ring to increase the particle beam’s phase-space density—a technique dubbed optical stochastic cooling (OSC). This paper uses a simple four energy level model to estimate the single-pass gain of Cr:ZnSe and presents numerical calculations combined with wave-optics simulations of undulator radiation to estimate the expected properties of the amplified undulator wave-packet.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Random quasi-phase-matching for pulse characterization from the near to the long wavelength infrared

Experiments requiring ultrafast laser pulses require a full characterization of the electric field to glean meaning from the experimental data. Such characterization typically requires a separate parametric optical process. As the central wavelength range of new sources continues to increase so too does the need for nonlinear crystals suited for characterizing these wavelengths. Here we report on the use of poly-crystalline zinc selenide as a universal nonlinear crystal in the frequency resolved optical gating characterization technique from the near to long-wavelength infrared. Due to its property of random quasi-phase-matching it’s capable of phase matching second-harmonic and sum-frequency generation of ultra-broadband pulses in the near and long wavelength infrared, while being crystal orientation independent. With the majority of ultra-fast laser sources being in this span of wavelengths, this work demonstrates a greatly simplified approach towards ultra-fast pulse characterization spanning from the near to the long-wavelength infrared. To our knowledge there is no single optical technique capable of such flexible capabilities.

Davis, Brandin (ORCID:0000000166964548)↗
DOE OSTI2021

Characterization of CdZnTeSe Nuclear Detector Chemically Etched in Bromine Methanol

Semiconductor nuclear radiation detectors made from tertiary and quaternary compounds of cadmium telluride (CdTe) can operate at room temperature without cryogenic cooling. One of such materials that have become of great interest is cadmium zinc telluride selenide (CdZnTeSe). Compared to other CdTe-based materials, such as cadmium zinc telluride (CdZnTe), CdZnTeSe can be grown with much less Te inclusions and sub-grain boundary networks. Chemical etching is often used to smoothen wafer surfaces during detector fabrication. This paper presents the characterization of CdZnTeSe that is chemically etched using bromine methanol solution. Infrared imaging shows that the wafer has no sub-grain boundary networks that often limit detector performance. The current-voltage (I-V) characterization experiment gave a resistivity of 4.6 × 10 10 Ω-cm for the sample. The I-V curve was linear in the ±10 to ±50 volts range. An energy resolution of 7.2% was recorded at 100 V for the 59.6-keV gamma line of 241 Am.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Effect of Surface Passivation of CZTS Semiconductor Detector on Leakage Current

Cadmium Zinc Telluride Selenide (CdZnTeSe or CZTS)has shown high crystal quality for room-temperature gamma ray and X-ray detection applications compared to Cadmium Zinc Telluride (CdZnTe or CZT) [1,2]. Current applications of CZT include medical imaging, homeland security, and X-ray and gamma ray astronomy [3]. CZST has similar potential applications

Kangethe, Anthony [Morgan State Univ., Baltimore, ↗
DOE OSTI2020

Study of CdZnTeSe Gamma-Ray Detector under Various Bias Voltages

Cadmium zinc telluride selenide (CdZnTeSe) is a new semiconductor material for gamma-ray detection and spectroscopy applications at room temperature. It has very high crystal quality compared to similar materials such as cadmium telluride and cadmium zinc telluride. The consistency of peak position in radiation detection devices is important to practical applications. In this paper, we have characterized a CdZnTeSe planar detector for bias voltages in the range of -20 V to -200 V and amplifier shaping time of 2, 3 and 6 μs. The peak position of the 59.6-keV gamma line of 241 Am becomes more stable as the absolute value of the applied voltage increases. The best energy resolution of 8.5% was obtained for the 59.6-keV gamma peak at -160 V bias voltage and 3-μs shaping time. The energy resolution was relatively stable in the -120 V to -200 V range for a 6-μs shaping time. Future work will be focused on the study of the peak position and energy resolution over time.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Electron Transfer Going the Distance: Mn-Doped ZnSe as a Model Photocatalytic System

In this work, time-resolved photoluminescence and transient absorption spectroscopy are used to examine the influence that long excited state lifetimes of Mn-doped nanocrystals have on the mechanisms of photo-induced electron transfer (PET) in photocatalytic systems. Mn-doped ZnSe nanocrystals can undergo PET over their nearly millisecond excited state lifetime, which enables electron transfer to viologens in solution over large encounter distances in comparison to molecular length scales. The long excited state lifetimes also enable diffusion of the excited nanocrystals over hundreds of nanometers in solution, allowing them to react with molecular species at nanomolar concentrations. The ability to capture and sustain optical energy in spin-forbidden transitions among crystal field states of the Mn ions opens opportunities to explore the influence that long excited state lifetimes have on photocatalytic reaction mechanisms involving molecular species such as CO 2 that can be difficult to concentrate or attach to nanocrystal surfaces.

14 SOLAR ENERGY↗
DOE OSTI2020

Kinetics of the luminescence decay of Fe{sup 2+} impurity centres in polycrystalline ZnSe upon excitation by an electron beam

The kinetics of the decay of the luminescence of Fe{sup 2+} ions is measured at nitrogen temperature in polycrystalline ZnSe excited by a short pulse of accelerated electrons. The time dependence of the luminescence intensity differs from the exponential one, observed upon excitation of luminescence by a short light pulse. The obtained nonexponential dependence is theoretically described. The explanation is based on the quenching effect of the excited state of the Fe{sup 2+} ion by free electrons of the volume charge of the current of accelerated electrons in the sample (Auger effect). It was shown that the relaxation of the volume charge after the electron-accelerating voltage is removed makes a significant contribution to the decay kinetics of the impurity luminescence. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure

An optically pumped semiconductor laser based on a type-II CdS/ZnSe nanoheterostructure containing 10 quantum wells (QWs) was studied. The structure was grown by metal-organic vapour phase epitaxy on a GaAs substrate. The lifetime of electron-hole pairs at a low pump level was measured by luminescence decay to be ∼0 ns. The peak power of the microcavity semiconductor laser at room temperature and longitudinal pumping by a repetitively pulsed N{sub 2} laser was 7.2 W at a wavelength of 514 nm. The relatively low laser slope efficiency (0.35 %) is explained by amplified spontaneous emission propagating along the structure. The peak power and efficiency of the laser in the case of transverse pumping increase to 70 W and 3.5 %, respectively. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Femtosecond dynamics of cavity modes in ZnSe films on a metal

The ultrafast evolution of cavity modes in a ZnSe film on a metal (Cr, Cu, or Ni) is studied by femtosecond pump/supercontinuum-probe spectroscopy on a time scale of several tens of femtoseconds. Femtosecond excitation of a microcavity in a ZnSe film on a metal substrate leads to a change in the parameters of cavity (Fabry – Perot) modes. The cavity-mode frequency shifts are due to the photoinduced changes in the boundary conditions and the optical thickness of microcavity. (paper)

36 MATERIALS SCIENCE↗
DOE OSTI2020

Nanosecond semiconductor disk laser emitting at 496.5 nm

An optically pumped semiconductor disk laser based on a heterostructure containing ten CdS/ZnSe coupled quantum wells with type-II band offsets is studied. The structure was grown by metalorganic vapour phase epitaxy (MOVPE) on a GaAs substrate. The peak power of the semiconductor disk laser achieved at room temperature under longitudinal pumping by a repetitively pulsed N{sub 2} laser was 0.75 W at a wavelength of 496.5 nm, a pulse duration of 3 ns, and a pulse repetition rate of 100 Hz. The slope efficiency of the disk laser was 2.7 %. The total divergence angle at a cavity length of 1.1 mm varied from 5 mrad near the lasing threshold to 15 mrad at the maximum pump power. (lasers)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Charge Transport and Space-Charge Formation in Cd 1 - x Zn x Te 1 - y Se y Radiation Detectors

The electron- and hole-transport properties in cadmium zinc telluride selenide (CZTS) crystals are studied using a laser-induced transient-current technique with pulsed and dc bias. The internal electric field profile and velocity of surface recombination are determined by Monte Carlo simulations of electron and hole transient currents combined with a numerical solution of the drift-diffusion equation coupled with Poisson’s equation. Electron and hole drift mobilities of μe = 830 cm 2 /Vs and μh = 40 cm 2 /Vs, respectively, are determined. We also develop a simple technique for evaluating surface recombination directly from measured current waveforms without the need for numerical simulation. The good quality of the prepared detector at pulsed bias, with electron- and hole-mobility-lifetime products of (μτ)e = 1.9 × 10 -3 cm 2 /V and (μτ)h = 1.4 × 10 -4 cm 2 /V, respectively, are observed. The formation of a positive space charge, originating from hole injection combined with a recombination level, is found. We observe a significant position dependence of the lifetime of electrons and holes in dc bias due to hole injection. The experiment is successfully fitted by a simple model dominated by a single deep recombination level with an energy of E t =E C -0.73eV; concentration of 7.3 × 10 11 cm -3 ; and electron- and hole-capture cross sections of 3.5 × 10 -14 cm 2 and 6.5 × 10 -14 cm 2 , respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Detector Performance on Surface Passivation and its Long-Term Stability

Surface passivation is an ideal technique to prepare the surfaces of fabrication Cadmium Zinc Telluride (CZT) and related semiconductor devices such as Cadmium Zinc Tellurium Selenide (CZTS). Surface passivation techniques reduce the effects of aging in the detector [1]. Surface performance effects on material performance can result in fluctuations in energy resolution over time (such as periods of a year or more). The long-term stability of surface passivation with Potassium Hydroxide (KOH) was observed with measurement of 1) current (nano Amp) vs voltage (V) and 2) spectral response and energy resolution throughout the years. Three CZTS detector samples of M2, M3, and M4 were examined using a photomultiplier tube and voltage amplifier. The Bridgman technique is used to grow the CZTS used in this study.

Johnson, Kirsten [Morgan State Univ., Baltimore, M↗
DOE OSTI2021

Advances in CdZnTeSe for Radiation Detector Applications

Detection of X- and gamma-rays is essential to a wide range of applications from medical imaging to high energy physics, astronomy, and homeland security. Cadmium zinc telluride (CZT) is the most widely used material for room-temperature detector applications and has been fulfilling the requirements for growing detection demands over the last three decades. However, CZT still suffers from the presence of a high density of performance-limiting defects, such as sub-grain boundary networks and Te inclusions. Cadmium zinc telluride selenide (CZTS) is an emerging material with compelling properties that mitigate some of the long-standing issues seen in CZT. This new quaternary is free from sub-grain boundary networks and possesses very few Te inclusions. In addition, the material offers a high degree of compositional homogeneity. The advancement of CZTS has accelerated through investigations of the material properties and virtual Frisch-grid (VFG) detector performance. The excellent material quality with highly reduced performance-limiting defects elevates the importance of CZTS as a potential replacement to CZT at a substantially lower cost.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Heteroepitaxial chemistry of zinc chalcogenides on InP nanocrystals for defect-free interfaces with atomic uniformity

Heteroepitaxy on colloidal semiconductor nanocrystals is an essential strategy for manipulating their optoelectronic functionalities. However, their practical synthesis typically leads to scattered and unexpected outcomes due to the intervention of multiple reaction pathways associated with complicated side products of reactants. Here, the heteroepitaxy mechanism of zinc chalcogenide initiated on indium phosphide (InP) colloidal nanocrystals is elucidated using the precursors, zinc carboxylate and trialkylphosphine selenide. The high magnetic receptivity of 77 Se and the characteristic longitudinal optical phonon mode of ZnSe allowed for monitoring the sequence of epilayer formation at the molecular level. The investigation revealed the sterically hindered acyloxytrialkylphosphonium and diacyloxytrialkylphosphorane to be main intermediates in the surface reaction, which retards the metal ion adsorption by a large steric hindrance. The transformation of adsorbates to the crystalline epilayer was disturbed by surface oxides. Raman scattering disclosed the pathway of secondary surface oxidation triggered by carboxylate ligands migrated from zinc carboxylate. The surface-initiated heteroepitaxy protocol is proposed to fabricate core/shell heterostructured nanocrystals with atomic-scale uniformity of epilayers. Despite the large lattice mismatch of ZnS to InP, we realised a uniform and interface defect-free ZnS epilayer (~0.3 nm thickness) on InP nanocrystals, as evidenced by a high photoluminescence quantum yield of 97.3%.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Wavelength-Dependent Spin Excitation with Circularly Polarized Light in CdSe Nanoplatelets

Zinc-blende (ZB) cadmium selenide (CdSe) nanoplatelets (NPLs) have drawn increasing attention as an ideal condensed-phase material for facilitating photon-to-spin transduction in quantum networks. Yet, a systematic investigation of their fidelity in converting circularly polarized light (CPL) to exciton spin polarization as a function of excitation wavelength is lacking. Here, this work demonstrates using time-resolved transient absorption (TA) spectroscopy combined with density functional theory calculations that ZB CdSe NPLs exhibit wavelength-dependent CPL-induced spin polarization. The capacity of CPL to inject spin polarization is maximized for resonant excitation of band-edge valence-to-conduction band (VB/CB) transitions, and the degree to which CPL induces spin polarization can be modified for non-resonant excitation wavelengths as excitation occurs at k-points away from the Γ point from VB states with varying degrees of mixed heavy-hole (HH) and light-hole (LH) characters. Furthermore, it is highlighted that spin polarization within the LH exciton (LX) population created from resonant LH/CB excitation is retained upon LX → HH exciton (HX) relaxation due to the slow electron spin-flip rate (~1.1 ps) compared to the LH → HH inter-band relaxation rate (~200 fs).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Formation Pathway of Wurtzite-like Cu 2 ZnSnSe 4 Nanocrystals

Cu 2 ZnSnSe 4 is a direct band gap semiconductor composed of Earth-abundant elements, making it an attractive material for thin film photovoltaic technologies. Cu 2 ZnSnSe 4 crystallizes in the kesterite structure type as a bulk material, but it can also crystallize in a metastable wurtzite-like crystal structure when synthesized on the nanoscale. The wurtzite-like polymorph introduces unique and useful properties to Cu 2 ZnSnSe 4 materials, including widely tunable band gaps and superior composi-tional flexibility as compared to kesterite Cu 2 ZnSnSe 4 . Here, we investigate the formation pathway of colloidally prepared wurtzite-like Cu 2 ZnSnSe 4 nanocrystals. We show that this quaternary material forms through a chain of reactions, starting with binary Cu 3 Se 2 nanocrystals that, due to both kinetic and thermodynamic reasons, preferentially react with tin to yield hexagonal copper tin selenide intermediates. Furthermore, these ternary intermediates then react with zinc to form the resulting wurtzite-like Cu 2 ZnSnSe 4 nanocrystals. Based on this formation pathway, we suggest synthetic methods that may prevent the for-mation of unwanted impurity phases that are known to hamper the efficiency of Cu 2 ZnSnSe 4 -based optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗