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Results for “Zone Refining”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Segregation Coefficients of Impurities in Selenium by Zone Refining

The purification of Se by zone refining process was studied. The impurity solute levels along the length of a zone-refined Se sample were measured by spark source mass spectrographic analysis. By comparing the experimental concentration levels with theoretical curves the segregation coefficient, defined as the ratio of equilibrium concentration of a given solute in the solid to that in the liquid, k = x(sub s)/x(sub l) for most of the impurities in Se are found to be close to unity, i.e., between 0.85 and 1.15, with the k value for Si, Zn, Fe, Na and Al greater than 1 and that for S, Cl, Ca, P, As, Mn and Cr less than 1. This implies that a large number of passes is needed for the successful implementation of zone refining in the purification of Se.

Su, Ching-Hua↗
NASA NTRS1993

Contactless heater floating zone refining and crystal growth

Floating zone refining or crystal growth is carried out by providing rapid relative rotation of a feed rod and finish rod while providing heat to the junction between the two rods so that significant forced convection occurs in the melt zone between the two rods. The forced convection distributes heat in the melt zone to allow the rods to be melted through with a much shorter melt zone length than possible utilizing conventional floating zone processes. One of the rods can be rotated with respect to the other, or both rods can be counter-rotated, with typical relative rotational speeds of the rods ranging from 200 revolutions per minute (RPM) to 400 RPM or greater. Zone refining or crystal growth is carried out by traversing the melt zone through the feed rod.

Kou, Sindo↗
NASA NTRS1979

Zone-refining encapsulated semiconductors

Reflector directs intense, sharply focused heat precisely where it is needed for zone-refining semiconductor materials. Reflector is especially suited for compound semiconductors which must be sealed inside capsule to prevent vaporizing during zone refining. Device is flattened toroid with elliptical-cross-section, much like horizontal partly-inflated inner tube.

Davidson, M. C.↗
NASA NTRS1988

Laser furnace and method for zone refining of semiconductor wafers

A method of zone refining a crystal wafer (116 FIG. 1) comprising the steps of focusing a laser beam to a small spot (120) of selectable size on the surface of the crystal wafer (116) to melt a spot on the crystal wafer, scanning the small laser beam spot back and forth across the surface of the crystal wafer (116) at a constant velocity, and moving the scanning laser beam across a predetermined zone of the surface of the crystal wafer (116) in a direction normal to the laser beam scanning direction and at a selectible velocity to melt and refine the entire crystal wafer (116).

Griner, Donald B.↗
NASA NTRS1986

Laser Vacuum Furnace for Zone Refining

Laser beam scanned to produce moving melt zone. Experimental laser vacuum furnace scans crystalline wafer with high-power CO2-laser beam to generate precise melt zone with precise control of temperature gradients around zone. Intended for zone refining of silicon or other semiconductors in low gravity, apparatus used in normal gravity.

Griner, D. B.↗
NASA NTRS1986

A graphical treatment of combined evaporation and segregation contributions to impurity profiles for zone-refining in vacuum

Impurity concentration profiles have been calculated for zone-refining when both segregation and evaporation of impurities are operative, assuming a uniform initial concentration. Graphic profiles are presented for selected values of effective segregation coefficient k, effective evaporation coefficient g, and number of zone passes n. Some examples of impurity profiles for float-zoned silicon are also presented.

Ciszek, T. F.↗
NASA NTRS1986

Zone Refining by Laser

System developed for studying use of laser beam for zone-refining semiconductors and metals. Specimen scanned with focused CO2 laser beam in such way that thin zone of molten material moves along specimen sweeps impurities with it. Zone-melting system comprises microcomputer, laser, electromechanical and optical components for beam control, vacuum chamber that holds specimen, and sensor for determining specimen temperature.

Griner, D. B.↗
NASA NTRS1975

Solar energy concentrator system for crystal growth and zone refining in space

The technological feasibility of using solar concentrators for crystal growth and zone refining in space has been performed. Previous studies of space-deployed solar concentrators were reviewed for their applicability to materials processing and a new state-of-the-art concentrator-receiver radiation analysis was developed. The radiation analysis is in the form of a general purpose computer program. It was concluded from this effort that the technology for fabricating, orbiting and deploying large solar concentrators has been developed. It was also concluded that the technological feasibility of space processing materials in the focal region of a solar concentrator depends primarily on two factors: (1) the ability of a solar concentrator to provide sufficient thermal energy for the process and (2) the ability of a solar concentrator to provide a thermal environment that is conductive to the processes of interest. The analysis indicate that solar concentrators can satisfactorily provide both of these factors.

Mcdermit, J. H.↗
NASA NTRS1984

Laser furnace technology for zone refining

A carbon dioxide laser experiment facility is constructed to investigate the problems in using a laser beam to zone refine semiconductor and metal crystals. The hardware includes a computer to control scan mirrors and stepper motors to provide a variety of melt zone patterns. The equipment and its operating procedures are described.

Griner, D. B.↗
NASA NTRS1988

Preparation of multistage zone-refined materials for thermochemical standards

This paper describes the steps of a two-step zone purification procedure for completed minicells filled with ultrahigh-purity succinonitrile (SCN) in which the CNS is under its own vapor pressure. The solid-liquid equilibrium, as determined by melting and freezing point measurements, is therefore considered to be a realization of the triple-point. The freezing-point plateaus measured at a variety of bath temperatures demonstrated both the fundamental reproducibility of the measurement for a given sample and the lack of dependence of that measurement on the bath temperature which controls the freezing rate. The measurement reproducibility and the sample consistency indicate that the method described is indeed suitable for the preparation of pure material which can be used for the purposes of thermistor and thermometer calibration at 58.0796 + or - 0.0015 C.

Rubinstein, E.↗
NASA NTRS1980

Float zone refining: Space problems and solutions. A speculative proposal

A facility for the automatic growth of 60 cm long boules of Si up to 10 cm diameter is described. The facility is 21 ft tall, weighs 17,000 lb (without the sand ballast), and consumes 60 kW power. As a point of reference, the facility will cost approximately $500K without automation which will be developed. The total price is expected to be approximately $1.2 million.

Gill, G.↗
NASA NTRS1998

Purification and Crystal Growth of Lead Iodide by Physical Vapor Transport Method

Lead iodide (PbI2) is a layered compound semiconductor being developed as room temperature x- and gamma-ray detector. Compared to the more studied material, mercuric iodide, PbI2 has a higher melting temperature and no phase transition until liquid phase which are indications of better mechanical properties. In this study, the source material was purified by the zone-refining process, and the purest section was extracted from center of the the zone-refined ingot to be grown by physical vapor transport (PVT) method. The zone-refined material and as-grown crystals were characterized by optical microscopy and differential scanning calorimetry (DSC) to reveal the surface morphology, purity and stoichiometry. The results shows that both materials are near-stoichiometric composition, with the purity of the as-grown crystals higher than zone-refined materials. The resistivity of the as-grown crystal (10" Omega-cm) was derived from current-voltage (I-V) measurement, and is 10 times higher than the zone-refined materials. Detail results will be presented and discussed.

Wright, G. W.↗
NASA NTRS2000

Purification of Carbon Nanotubes: Alternative Methods

Traditional carbon nanotube purification process involves nitric acid refluxing and cross flow filtration using surfactant TritonX. This is believed to result in damage to nanotubes and surfactant residue on nanotube surface. Alternative purification procedures involving solvent extraction, thermal zone refining and nitric acid refiuxing are used in the current study. The effect of duration and type of solvent to dissolve impurities including fullerenes and P ACs (polyaromatic compounds) are monitored by nuclear magnetic reasonance, high performance liquid chromatography, and thermogravimetric analysis. Thermal zone refining yielded sample areas rich in nanotubes as seen by scanning electric microscopy. Refluxing in boiling nitric acid seem to improve the nanotube content. Different procedural steps are needed to purify samples produced by laser process compared to arc process. These alternative methods of nanotube purification will be presented along with results from supporting analytical techniques.

Files, Bradley↗
NASA NTRS2003

Succinonitrile Purification Facility

The Succinonitrile (SCN) Purification Facility provides succinonitrile and succinonitrile alloys to several NRA selected investigations for flight and ground research at various levels of purity. The purification process employed includes both distillation and zone refining. Once the appropriate purification process is completed, samples are characterized to determine the liquidus and/or solidus temperature, which is then related to sample purity. The lab has various methods for measuring these temperatures with accuracies in the milliKelvin to tenths of milliKelvin range. The ultra-pure SCN produced in our facility is indistinguishable from the standard material provided by NIST to well within the stated +/- 1.5mK of the NIST triple point cells. In addition to delivering material to various investigations, our current activities include process improvement, characterization of impurities and triple point cell design and development. The purification process is being evaluated for each of the four vendors to determine the efficacy of each purification step. We are also collecting samples of the remainder from distillation and zone refining for analysis of the constituent impurities. The large triple point cells developed will contain SCN with a melting point of 58.0642 C +/- 1.5mK for use as a calibration standard for Standard Platinum Resistance Thermometers (SPRTs).

Source record↗
NASA NTRS2005

A Viable Scheme for Elemental Extraction and Purification Using In-Situ Planetary Resources

NASA's new strategic direction includes establishing a self-sufficient, affordable and safe human and robotic presence outside the low earth orbit. Some of the items required for a self-sufficient extra-terrestrial habitat will include materials for power generation (e.g. Si for solar cells) and habitat construction (e.g. Al, Fe, and Ti). In this paper we will present a viable elemental extraction and refining process from in-situ regolith which would be optimally continuous, robotically automated, and require a minimum amount of astronaut supervision and containment facilities, The approach is based on using a concentrated heat source and translating sample geometry to enable simultaneous oxide reduction and elemental refining. Preliminary results will be presented to demonstrate that the proposed zone refining process is capable of segregating or refining important elements such as Si (for solar cell fabrication) and Fe (for habitat construction). A conceptual scheme will be presented whereby such a process could be supported by use of solar energy and a precursor robotic mission on the surface of the moon.

Sen, S.↗