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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1970

P-n junctions formed in gallium antimonide

Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimonide substrate. HCl transports gallium to the reaction zone, where it combines with antimony hydride and the dopant carrier, hydrogen telluride. Temperatures as low as 400 degrees C are required.

Clough, R.↗
NASA NTRS1976

Thermocapillary convection in microgravity crystal growth melts of indium-antimonide

Results of two recent crystal growth experiments conducted aboard Skylab are analyzed for thermoconvective aspects. Theoretical temperature and velocity profiles in the crystal melts are predicted via computer modeling. These results are compared with experimental data obtained from Skylab investigators. From theoretical considerations, both indium-antimonide experiments should have exhibited substantial thermocapillary convection, but did not due to probable oxide film interference and/or opposing solutal effects.

Bourgeois, S. V., Jr.↗
NASA NTRS1977

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

Source record↗
NASA NTRS1981

X-ray photoemission studies of superficially oxidized cesium antimonide photoemitters

Superficially oxidized cesium antimonide photoemitting surfaces prepared in ultrahigh vacuum were studied by X-ray photoelectron spectroscopy. Oxidation of Cs3Sb to produce a surface with enhanced photosensitivity converts part of the antimony to elemental antimony and part of the cesium to cesium suboxide. The latter is identified on the basis of an O1 s peak at 531.3 eV, characteristic of Cs11O3. The production of Cs2O is not ruled out in this process since its signature at 527.5 eV is masked by an antimony shake-up peak at 527 eV.

Bates, C. W., Jr.↗
NASA NTRS1982

Study of photoconductive indium antimonide

Indium antimonide (InSb) material was assessed for use as photoconductive infrared detectors under low background conditions. Such detectors must be more rugged, and have lower capacitance, than the common photovoltaic InSb detector. Electronic grade n-type InSb was etched to 50 micrometers thickness, and tin and gold contacts were applied by evaporation. The test devices showed a relatively low ultimate impedance: 7 Mohms at 4.2 K. This was attributed to the presence of impurity levels of very shallow energies, and this material was judged unsuitable for low background detection.

Low, F. J.↗
NASA NTRS1983

Operation of integrating indium antimonide linear arrays at 65 K and below

The combination of a FET switch non-CCD readout architecture with high-quality mesa-photovoltaic indium-antimonide detector material has led to high-performance integrating linear imagers in the 1- to 5-micron region. These devices operate in the temperature regime below 100 K and provide very good dark current and responsivity uniformity (+ or - 2 percent). Test data will show performance at 65 K for a 512-element array and 46 K for a 128-element array. Useful integration times of 3600 seconds at 46 K and greater than 12 seconds at 65 K have been achieved. For both devices, kTC read noise levels of less than 1200 electrons have been measured.

Bailey, G. C.↗
NASA NTRS1983

Integrating indium antimonide linear arrays at 65K and below

A schematic is presented of a simplified electronic architecture of experimental 128 element infrared imager. Tables are given of sample diode responsivity, 512 element focal plane performance summary, and 128 element FPA mechanical and electrical characteristics. Typical 43 x 43 micron detector IV characteristics at 84 K are given, along with typical 43 x 43 micron Indium Antimonide CV characteristic at 83 K.

Bailey, Gary C.↗
NASA NTRS2004

Recent progress in the development of antimonide-based mid-ir interband cascade lasers

Antimonide-based type-II interband cascade lasers are promising in becoming efficient and compact mid-infrared light sources for many applications such as gas sensing and environmental monitoring. Significant progress toward such a goal has recently been made in terms of achieving low threshold current densities, high temperature operation, and continuous wave operation of single-mode distributed feedback lasers. We review the recent progress of Sb-based mid-IR IC lasers and address the requirements for further improvements in their performance.

semiconductor superlattices↗
NASA NTRS2020

Antimonides T2SL Mid-Wave and Long-Wave Infrared Focal Plane Arrays for Earth Remote Sensing Applications

In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The initial BIRD devices (such as the nBn and the XBn) used either InAs absorber grown on InAs substrate, or lattice-matched InAsSb alloy grown on GaSb substrate, with cutoff wavelengths of ~3.2μm and ~4μm, respectively. While these detectors could operate at much higher temperatures than existing MWIR detectors based on InSb, their spectral responses do not cover the full (3 – 5.5μm) MWIR atmospheric transmission window. The T2SL BIRD devices not only covers the full MWIR atmospheric transmission window, but the full LWIR atmospheric transmission window and beyond. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability.

Ghuman, Parminder↗