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Results for “bulk photovoltaic”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Characterization of iron-doped lithium niobate for holographic storage applications

A comprehensive characterization of chemical and holographic properties of eight systematically chosen Fe:LiNbO3 crystals is performed in order to determine optimum performance of the crystals in holographic storage and display applications. The discussion covers determination of Fe(2+) and Fe(3+) ion concentrations in Fe:LiNbO3 system from optical absorption and EPR measurements; establishment of the relation between the photorefractive sensitivity of Fe(2+) and Fe(3+) concentrations; study of the spectral dependence, the effect of oxygen annealing, and of other impurities on the photorefractive sensitivity; analysis of the diffraction efficiency curves for different crystals and corresponding sensitivities with the dynamic theory of hologram formation; and determination of the bulk photovoltaic fields as a function of Fe(2+) concentrations. In addition to the absolute Fe(2+) concentration, the relative concentrations of Fe(2+) and Fe(3+) ions are also important in determining the photorefractive sensitivity. There exists an optimal set of crystal characteristics for which the photorefractive sensitivity is most favorable.

Shah, R. R.↗
NASA NTRS1982

Photovoltaic characteristics of diffused P/+N bulk GaAs solar cells

The photovoltaic characteristics of P(+)N junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are described in this paper.Spectral response measurements were analyzed in detail and compared to a computer simulation in order to determine important material parameters. It is projected that proper optimization of the cell parameters can increase the efficiency of the cells from 12.2 percent to close to 20 percent.

Borrego, J. M.↗
NASA NTRS1999

High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures

The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and Epsilon. The challenge was to find PZT compositions that maintained high d(sub ij) and Epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.

Neurgaonkar, R. R.↗
NASA NTRS1999

High Performance Piezoelectric Thin Films for Shape Control in Large Inflatable Structures

The objective of this research and development program was to develop PbZr(1-x)Ti(x)O3 (PZT) and Pb(1-x)Ba(x)Nb2O6 (PBN) materials with large piezoelectric response which are suitable for shape control in large inflatable structures. Two approaches were to be considered: (1) direct deposition of PZT and PBN films on flexible plastic or thin metal foil substrates, and (2) deposition on Si followed by fabrication of hybrid structures on mylar or kapton. Testing in shape control concepts was carried out at JPL and based on their results, the required modifications were made in the final film compositions and deposition techniques. The program objective was to identify and then optimize piezoelectric materials for NASA shape control applications. This involved the bulk piezoelectric and photovoltaic responses and the compatibility of the thin films with appropriate substrate structures. Within the PZT system, Rockwell has achieved the highest reported piezoelectric coefficient (d(sub 33) greater than 100 pC/N) of any ceramic composition. We used this experience in piezoelectric technology to establish compositions that can effectively address the issues of this program. The performance of piezoelectric thin films depends directly on d(sub ij) and epsilin. The challenge was to find PZT compositions that maintained high d(sub ij) and epsilon, while also exhibiting a large photovoltaic effect and integrate thin films of this composition into the system structure necessary to meet shape control applications. During the course of this program, several PZT and PLZT compositions were identified that meet these requirements. Two such compositions were successfully used in electrical and optical actuation studies of thin film structures.

Neurgaonkar, R. R.↗
NASA NTRS1984

Diffused junction p(+)-n solar cells in bulk GaAs. II - Device characterization and modelling

The photovoltaic characteristics of p(+)-n junction solar cells fabricated on bulk GaAs by an open tube diffusion technique are presented in detail. Quantum efficiency measurements were analyzed and compared to computer simulations of the cell structure in order to determine material parameters such as diffusion length, surface recombination velocity and junction depth. From the results obtained it is projected that proper optimization of the cell parameters can increase the efficiency of the cells to close to 20 percent.

Keeney, R.↗
NASA NTRS1987

Characterization and modelling of open tube diffused n+p bulk InP solar cells

The authors describe the photovoltaic characteristics of an n+p junction solar cell fabricated on bulk InP by an open-tube-diffusion technique. Analysis of the forward characteristics shows that the forward current is dominated by recombination in the quasineutral regions, indicating that the fabrication technique produces a clean junction. Spectral response measurements are analyzed and more realistic boundary conditions are used to model the solar cell to determine important material and device parameters.

Bothra, S.↗
NASA NTRS1978

Thermal and other tests of photovoltaic modules performed in natural sunlight

The bulk of the testing was the characterization of twenty-nine modules according to their nominal operating cell temperature (NOCT) and the effect on NOCT of changes in module design, various residential roof mounting configurations, and dirt accumulation. Other tests, often performed parallel with the NOCT measurements, evaluated the improvement in electrical performance by cooling the modules with water and by channeling the waste heat into a phase change material (wax). Electrical degradation resulting from the natural marriage of photovoltaic and solar water heating modules was also demonstrated. Cost effectiveness of each of these techniques are evaluated in light of the LSA cost goal of $0.50 per watt.

Stultz, J. W.↗
NASA NTRS2008

Progress Towards III-V Photovoltaics on Flexible Substrates

Presented here is the recent progress of the NASA Glenn Research Center OMVPE group's efforts in the development of high efficiency thin-film polycrystalline III-V photovoltaics on optimum substrates. By using bulk polycrystalline germanium (Ge) films, devices of high efficiency and low mass will be developed and incorporated onto low-cost flexible substrates. Our progress towards the integration of high efficiency polycrystalline III-V devices and recrystallized Ge films on thin metal foils is discussed.

McNatt, Jeremiah S.↗
NASA NTRS1981

Effect of short wavelength illumination on the characteristic bulk diffusion length in ribbon silicon solar cells

The influence of short wavelength light on the characteristic bulk minority carrier diffusion length of the ribbon silicon photovoltaic cell has been investigated. We have measured the intensity and wavelength dependence of the diffusion length in an EFG ribbon cell, and compared it with a standard Czochralski grown silicon cell. While the various short wavelength illuminations have shown no influence on the diffusion length in the CZ cell, the diffusion lengths in the ribbon cell exhibit a strong dependence on the volume generation rate as well as on the wavelength of the superimposed lights. We have concluded that the trap-filling phenomenon at various depths in the bulk neutral region of the cell is consistent with the experimental observation.

Ho, C. T.↗
NASA NTRS1984

Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

Costogue, E. N.↗
NASA NTRS2012

Comparison of Square and Radial Geometries for High Intensity Laser Power Beaming Receivers

In an effort to further advance a realizable form of wireless power transmission (WPT), high intensity laser power beaming (HILPB) has been developed for both space and terrestrial applications. Unique optical-to-electrical receivers are employed with near infrared (IR-A) continuous-wave (CW) semiconductor lasers to experimentally investigate the HILPB system. In this paper, parasitic feedback, uneven illumination and the implications of receiver array geometries are considered and experimental hardware results for HILPB are presented. The TEM00 Gaussian energy profile of the laser beam presents a challenge to the effectiveness of the receiver to perform efficient photoelectric conversion, due to the resulting non-uniform illumination of the photovoltaic cell arrays. In this investigation, the geometry of the receiver is considered as a technique to tailor the receiver design to accommodate the Gaussian beam profile, and in doing so it is demonstrated that such a methodology is successful in generating bulk receiver output power levels reaching 25 W from 7.2 sq cm of photovoltaic cells. These results are scalable, and may be realized by implementing receiver arraying and utilizing higher power source lasers to achieve a 1.0 sq m receiver capable of generating over 30 kW of electrical power. This type of system would enable long range optical "refueling" of electric platforms, such as MUAV s, airships, robotic exploration missions and provide power to spacecraft platforms which may utilize it to drive electric means of propulsion. In addition, a smaller HILPB receiver aperture size could be utilized to establish a robust optical communications link within environments containing high levels of background radiance, to achieve high signal to noise ratios.

Raible, Daniel E.↗
NASA NTRS2004

Thin-Film Solar Cells on Metal Foil Substrates for Space Power

Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. The objective of this research is to continue development of an innovative photovoltaic technology for satellite power sources that could provide up to an order of magnitude saving in both weight and cost, and is inherently radiation-tolerant through use of thin film technology and thin foil substrates such as 5-mil thick stainless steel foil or 1-mil thick Ti. Current single crystal technology for space power can cost more than $300 per watt at the array level and weigh more than 1 kg/sq m equivalent to specific power of approx. 65 W/kg. Thin film material such as CuIn(1-x),Ga(x)S2, (CIGS2), CuIn(1-x), G(x)Se(2-y),S(y), (CIGSS) or amorphous hydrogenated silicon (a-Si:H) may be able to reduce both the cost and mass per unit area by an order of magnitude. Manufacturing costs for solar arrays are an important consideration for total spacecraft budget. For a medium sized 5kW satellite, for example, the array manufacturing cost alone may exceed $2 million. Moving to thin film technology could reduce this expense to less than $500 K. Previous work at FSEC demonstrated the potential of achieving higher efficiencies from CIGSS thin film solar cells on 5-mil thick stainless steel foil as well as initial stages of facility augmentation for depositing thin film solar cells on larger (6"x 4") substrates. This paper presents further progress in processing on metal foil substrates. Also, previous work at DayStar demonstrated the feasibility of flexible-thin-film copper-indium-gallium-diselenide (CIGS) solar cells with a power-to-weight ratio in excess of 1000 W/kg. We will comment on progress on the critical issue of scale-up of the solar cell absorber deposition process. Several important technical issues need to be resolved to realize the benefits of lightweight technologies for solar arrays, such as: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. Once the technology has gained spaceflight certification it should find rapid acceptance in specific satellite markets.

Raffaelle, Ryne P.↗
NASA NTRS1978

Method and apparatus for measuring minority carrier lifetimes and bulk diffusion length in P-N junction solar cells

Carrier lifetimes and bulk diffusion length are qualitatively measured as a means for qualification of a P-N junction photovoltaic solar cell. High frequency (blue) monochromatic light pulses and low-frequency (red) monochromatic light pulses were alternately applied to the cell while it was irradiated by light from a solar simulator, and synchronously displaying the derivative of the output voltage of the cell on an oscilloscope. The output voltage is a measure of the lifetimes of the minority carriers (holes) in the diffused N layer and majority carriers (electrons) in the bulk P material, and of the diffusion length of the bulk silicon. By connecting a reference cell in this manner with a test cell to be tested in reverse parallel, the display of a test cell that matches the reference cell will be a substantially zero output.

Vonroos, O. H.↗
NASA NTRS1986

Proposal for superstructure based high efficiency photovoltaics

A novel class of cascade structures is proposed which features multijunction upper subcells, referred to as superstructure high-efficiency photovoltaics (SHEPs). The additional junctions enhance spectral response and improve radiation tolerance by reducing bulk recombination losses. This is important because ternary III-V alloys, which tend to have short minority-carrier diffusion lengths, are the only viable materials for the high-bandgap upper subcells required for cascade solar cells. Realistic simulations of AlGaAs SHEPs show that one-sun AM0 efficiencies in excess of 26 percent are possible.

Wagner, M.↗
NASA NTRS1980

Epitaxial and polycrystalline GaAs solar cells using OM-CVD techniques

GaAs epitaxial films were grown by chemical vapor deposition using organo-metallic sources (OM-CVD) on single crystal and polycrystalline bulk GaAs, as well as on bulk polycrystalline and recrystallized thin-film Ge substrates. Details of Antireflecting Metal-Oxide-Semiconductor (AMOS) solar cells fabricated on GaAs films grown on bulk polycrystalline Ge and recrystallized Ge thin-film substrates will be discussed, as well as preliminary photovoltaic results obtained for n(+)/p homojunction structures.

Yeh, Y. C. M.↗
NASA NTRS1987

Superstructure high efficiency photovoltaics

A novel class of photovoltaic cascade structures is introduced which features multijunction upper subcells. These superstructure high efficiency photovoltaics (SHEP's) exhibit enhanced upper subcell spectral response because of the additional junctions which serve to reduce bulk recombination losses by decreasing the mean collection distance for photogenerated minority carriers. Two possible electrical configurations were studied and compared: a three-terminal scheme that allows both subcells to be operated at their individual maximum power points and a two-terminal configuration with an intercell ohmic contact for series interconnection. The three-terminal devices were found to be superior both in terms of beginning-of-life expectancy and radiation tolerance. Realistic simulations of three-terminal AlGaAs/GaAs SHEP's show that one sun AMO efficiencies in excess of 26 percent are possible.

Wagner, M.↗