SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Comparison of high temperature storage bake and operating burn-in as screening techniques for semiconductor devices used in Nimbus satellite
Statistical estimation procedures for identifying and eliminating poor quality or defective items
Data accumulated during 4 years of research and evaluation of ceramic chip capacitors, ceramic carrier mounted active devices, beam-lead transistors, and chip resistors are presented. Life and temperature coefficient test data, and optical and scanning electron microscope photographs of device failures are presented and the failure modes are described. Particular interest is given to discrete component qualification, power burn-in, and procedures for testing and screening discrete components. Burn-in requirements and test data will be given in support of 100 percent burn-in policy on all NASA flight programs.
The CMS detector s silicon tracker will be replaced in preparation for the upcoming High-Luminosity LHC (HL LHC) upgrade. The inner tracker will include a new pixel detector while the outer tracker (OT) will feature 5,592 pixel strip (PS) and 7,608 strip strip (2S) sensor modules with production distributed across 7 sites worldwide, requiring standardized grading and testing. One testing apparatus the burn-in box replicates the temperature cycling conditions that successful modules must withstand. The Phase-II Outer Tracker Analyzer of Test Outputs (POTATO) standardizes module evaluation and grading among testing sites. Given burn-in box test output, POTATO analyzes the results and assigns a letter grade to a module and its sub-components. POTATO's grading process must adapt to evolving standards for module evaluation; hence, we detail work on POTATO's database and grading functionality that will facilitate the unified assessment of Phase-II OT module assembly and testing worldwide. Once completed, POTATO will allow technicians to interact with a database of all graded modules and efficiently assess the global module assembly effort.
Terminal burn-in or baking step time in the processing of planar silicon devices is extended to reduce their inversion tendencies. The collector-base junction of the device is also cyclically biased during the burn-in.
The diffusion of Mg defects in 3C-SiC is studied using the density functional theory. Mg has the highest burn-in rate as a transmutant in 3C-SiC when it is placed in high-energy neutron irradiation environment of a fusion reactor. The presence and evolution of transmutant defects impact thermal and mechanical properties of this important structural material. This study is focused on understanding the structure, stability, and evolution of Mg defects and the interaction of Mg with native defects in 3C-SiC. Our calculations of diffusion coefficients for different Mg defects suggest that Mg is likely to diffuse faster in pristine 3C-SiC than in the damaged one, in agreement with earlier experimental observations.
4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.
The High-Luminosity LHC (HL-LHC) will operate at significantly increased luminosities and is expected to deliver about 3000 $fb^{-1}$ of proton-proton collision data at $\sqrt{s}=14$ TeV over a decade of operation. To maintain efficient tracking and triggering performance under high pileup and radiation conditions, the CMS experiment is upgrading its tracking detector for Phase-2 operations. The upgraded Outer Tracker (OT) will consist of Pixel-Strip (PS) and Strip-Strip (2S) silicon modules capable of providing tracking information to the Level-1 trigger at 40 MHz. Production and qualification of OT modules have been ongoing for about one year across several assembly and testing centers in the US, Europe, India, and Pakistan, requiring extensive testing to ensure stable operation in the HL-LHC environment. Fermilab is responsible for the production and testing of a significant fraction of the OT modules. The testing activities include IV characterization of silicon sensors, noise and pedestal measurements, verification of communication between module components, and burn-in studies using cold-box systems operated under controlled thermal conditions. Results from module testing and qualification studies performed during production will be presented.
Flight specifications effects on failure rates of semiconductor parts in Apollo Guidance Computer, detailing procurement, screen, burn-in and field history
Tests were conducted on 20-Ah sealed nickel cadmium cells to evaluate initial and long-term performance at various charge rates, temperatures and voltage-control levels. An average ampere-hour recharge of 103 percent per orbit at 13 C was able to maintain cell capacity; required watt-hour recharge on an orbital basis was 8 to 10 percent greater than required ampere-hour recharge. Cells exhibited an early life burn-in characteristic. A discharge after periods of repetitive cycling yielded two voltage plateaus which were temporarily eliminated by the discharge.
Quality, reliability, and design standards for microwave hybrid microcircuits were established. The MSFC Standard 85M03926 for hybrid microcircuits was reviewed and modifications were generated for use with microwave hybrid microcircuits. The results for reliability tests of microwave thin film capacitors, transistors, and microwave circuits are presented. Twenty-two microwave receivers were tested for 13,500 unit hours. The result of 111,121 module burn-in and operating hours for an integrated solid state transceiver module is reported.
The guidelines for selecting hardware to be used in manned spacecraft to obtain a five year operational lifetime without maintenance were developed. An analysis was conducted on the design, application, failure mechanisms, manufacturing processes and controls, screen and burn-in techniques, and quality control of hardware items. The equipment considered for evaluation include: (1) electric motors and bearings; (2) accelerometers; (3) gyroscopes and bearings; (4) compressors and pumps, (5) magnetic tape recorders; (6) plumbing components and tubing; (7) check valves; (8) pressure regulators and solenoid valves; (9) thermal control valves; (10) pressure vessels and positive expulsion devices; (11) nickel cadmium batteries; and (12) transducers.
The design of a previously developed basic variable R load simulator was entended to increase its power dissipation and transient handling capabilities. The delivered units satisfy all design requirements, and provides for a high power, modular simulation capability uniquely suited to the simulation of complex load responses. In addition to presenting conclusions and recommendations and pertinent background information, the report covers program accomplishments; describes the simulator basic circuits, transfer characteristic, protective features, assembly, and specifications; indicates the results of simulator evaluation, including burn-in and acceptance testing; provides acceptance test data; and summarizes the monthly progress reports.
This paper describes the design and development of a set of multifunction VHF/UHF integrated circuits aimed at providing a major improvement in spacecraft radio reliability through low stress operation and the processing of these circuits in beam-lead form. The methods evolved for the high frequency characterization of the devices are discussed together with the design of suitable test fixtures. Typical test results and the distribution of test parameters are presented. A unique carrier for beam-lead devices is described, and the need for such a device is discussed. The application of the carrier to device screening, burn-in and drift measurements is discussed together with the incentives for providing these capabilities. An overview of the integration of the devices into the spacecraft radio is given and candidate assembly processes are discussed. The technology impact of this approach upon future spacecraft radio systems is qualitatively examined.
A description is presented of a test program which has shown that well-constructed bubble memories can operate reliably over long periods of time and at low error rates. Even the relatively high error rate of one memory during burn-in can be considered acceptable if compared with tape recorder standards. No wear-out mechanism or aging could be detected. Bubble memories are now considered suitable for long-duration space missions and certainly are suitable for many military and commercial applications. It must be recognized, however, that bubble memories are complex devices and not yet fully understood. While the particular memory tested may never find practical applications, it nevertheless has provided insight into performance characteristics considered typical of bubble memories.
Twenty-five Hughes HCMP 1852D and 25 RCA CDP1852D 8-bit, CMOS, I/O port microcircuits underwent electrical characterization tests. All electrical measurements were performed on a Tektronix S-3260 Test System. Before electrical testing, the devices were subjected to a 168-hour burn-in at 125 C with the inputs biased at 10V. Four of the Hughes parts became inoperable during testing. They exhibited functional failures and out-of-range parametric measurements after a few runs of the test program.
The premission failure of a Voyager spacecraft capacitor has prompted an investigation into the use of polycarbonate capacitors in high impedance circuits, during which capacitor failures were induced by thermal cycling together with extended periods at high temperature. Measurement of leakage path temperature coefficients indicates that there are two distinct leakage types whose mechanisms are complicated by movement within the capacitor during temperature changes. A novel system for pulse detection during capacitor burn-in and ramp testing has proven to be beneficial.
INL has evaluated and refurbished General Purpose Heat Source (GPHS) Radioisotope Thermoelectric Generator (RTG) Flight Unit 5 (GPHS-RTG F5R or F5R) that was defueled in 2005. The generator has passed all the INL internal reviews, an end item data package has been delivered to NASA and is ready fueling for a mission. NASA requested a user’s guide for F5R with enough detail for a prospective mission proposal. This report documents the development of the power prediction model used in the user’s guide. The prediction evaluated the thermoelectric “burn-in” and the graceful degradation modes of the missions and developed a thermal inventory dependent equation that predicts the power that matches Galileo, Cassini, and PNH within a three-standard deviation of ±1%. This prediction is only valid for the 30 VDC load voltage of these missions.