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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Charge collection efficiency in back-illuminated Charge-Coupled Devices

Low noise CCDs fully-depleted up to 675 micrometers have been identified as a unique tool for Dark Matter searches and low energy neutrino physics. The charge collection efficiency (CCE) for these detectors is a critical parameter for the performance of future experiments. We present here a new technique to characterize CCE in back-illuminated CCDs based on soft X-rays. This technique is used to characterize two different detector designs. The results demonstrate the importance of the backside processing for detection near threshold, showing that a recombination layer of a few microns significantly distorts the low energy spectrum. The studies demonstrate that the region of partial charge collection can be reduced to less than 1 micrometer thickness with adequate backside processing.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Charge collection and trapping mechanisms in hexagonal boron nitride epilayers

Understanding charge collection and trapping mechanisms is crucial for using hexagonal boron nitride (h-BN) as active layers for many photonic and electronic devices such as deep UV detectors and emitters, neutron detectors, and single photon emitters. Charge collection and trapping mechanisms in h-BN epilayers have been investigated by probing impurity related optical emissions under an applied electrical field. Our results suggested that the existence of oxygen impurities affects the charge collection efficiency and results in an additional emission peak at 3.75 eV, corresponding to a donor-acceptor pair (DAP) recombination involving O N (oxygen residing on the nitrogen site) donors and the V B -H (boron vacancy bonded with hydrogen complex) deep level acceptors. Experimental results further revealed that the applied electric field induces an anti-correlation between the emission intensity of the DAP transition and the charge collection efficiency from which it was shown that it is possible to find an expression to quantitatively measure the maximum charge collection efficiency in h-BN. The results introduce not only a coherent picture for the relationship between common impurities in h-BN and charge collection and trapping mechanisms but also useful insights into possible approaches to improve the quality, purity, and charge collection of the h-BN epilayers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells

In this contribution, we report on the charge-collection characteristics of silicon photovoltaic devices using passivated contacts based on the c-Si/SiO x /poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiO x layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The apexes of the pyramids exhibit reduced EBIC signal whereas the valleys between adjacent pyramids show the strongest collection. Our results indicate that charge collection in c-Si/SiO x /poly-Si structures can be influenced by both the properties of the SiO x layer and surface texture.

14 SOLAR ENERGY↗
DOE OSTI2020

Charge collection and electrical characterization of neutron irradiated silicon pad detectors for the CMS High Granularity Calorimeter

The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and timing information on electromagnetic and hadronic showers in the immense pileup of the HL-LHC. The High Granularity Calorimeter (HGCAL) will use 120-, 200-, and 300-$\mu\textrm{m}$ thick silicon (Si) pad sensors as the main active material and will sustain 1-MeV neutron equivalent fluences up to about $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$. In order to address the performance degradation of the Si detectors caused by the intense radiation environment, irradiation campaigns of test diode samples from 8-inch and 6-inch wafers were performed in two reactors. Characterization of the electrical and charge collection properties after irradiation involved both bulk polarities for the three sensor thicknesses. Since the Si sensors will be operated at -30 $^\circ$C to reduce increasing bulk leakage current with fluence, the charge collection investigation of 30 irradiated samples was carried out with the infrared-TCT setup at -30 $^\circ$C. TCAD simulation results at the lower fluences are in close agreement with the experimental results and provide predictions of sensor performance for the lower fluence regions not covered by the experimental study. All investigated sensors display 60$\%$ or higher charge collection efficiency at their respective highest lifetime fluences when operated at 800 V, and display above 90$\%$ at the lowest fluence, at 600 V. The collected charge close to the fluence of $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$ exceeds 1 fC at voltages beyond 800 V.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

The nanoscale distribution of copper and its influence on charge collection in CdTe solar cells

For decades, Cu has been the primary dopant in CdTe photovoltaic absorbers. Typically, Cu acceptor concentrations in these devices are on the order of 1 1014 cm-3, which has made it notoriously difficult to directly correlate nanoscale Cu distributions to the local charge transport properties of these devices. To measure and correlate these properties, measurement techniques require high sensitivity to elemental concentration, large penetration depth, and operando compatibility. Techniques such as secondary-ion mass spectroscopy and X-ray energy dispersive spectroscopy are widely adopted to measure Cu concentrations, but they are limited by penetration depth, sensitivity, or spatial resolution. Additionally, they lack the operando capabilities required to correlate one-to-one Cu concentrations to electrical performance. In this work, correlative X-ray microscopy is used to investigate the spatial distribution of Cu and its impact on charge collection through the depth and breadth of CdTe photovoltaic devices. Plan-view, nanoscale X-ray fluorescence maps clearly demonstrate the spatial segregation of copper around regions thought to be CdTe grain boundaries. Complementary cross-section imaging unveils the transition of the maximum charge-collection efficiency from the ZnTe-CdTe interface to the CdS-CdTe interface as a function of Cu incorporation. The copper concentration through the depth of the CdTe layer is characterized by slow and fast diffusion components, and cross-section charge-transport modeling shows that the experimentally obtained charge collection can be explained by the modeled acceptor distribution through the depth of the CdTe layer.

14 SOLAR ENERGY↗
DOE OSTI2021

Copper Defects and Charge Collection in Cadmium Telluride Photovoltaic Devices

In CdTe photovoltaic devices, the CdTe layer must be doped with Cu to reduce its resistivity, increase carrier lifetime, and improve hole transport. However, the Cu concentration is typically very low around the interfaces and within the CdTe layer, making it difficult to determine the influence Cu has on charge transport at the nanoscale; Cu concentrations are difficult to detect due to low ionization probability of Cu atoms [1]. Here, we use synchrotron X-ray microscopy to probe the nanoscale distribution of Cu and correlate it to local charge collection in CdTe photovoltaic devices. We demonstrate Cu segregation around grain boundaries, and, using cross-section charge collection measurements and transport modelling, show recombination center concentration in the CdTe layer dictates the interface at which charge collection occurs. The work gives insights on how Cu distributes in CdTe photovoltaic systems, and an understanding of how these distributions affect charge transport.

Walker, Trumann↗
DOE OSTI2021

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.

42 ENGINEERING↗
DOE OSTI2020

Charge collection study with the ATLAS ITk prototype silicon strip sensors ATLAS17LS

The inner tracker of the ATLAS detector is scheduled to be replaced by a completely new silicon-based inner tracker (ITk) for the Phase-II of the CERN LHC (HL-LHC). The silicon strip detector covers the volume 40 < R < 100 cm in the radial and | z | < 300 cm in the longitudinal directions. The silicon sensors for the detector will be fabricated using the n + -on-p 6-inch wafer technology, for a total of 22,000 wafers. Here, intensive studies were carried out on the final prototype sensors ATLAS17LS fabricated by Hamamatsu Photonics (HPK). The charge collection properties were examined using penetrating 90 Sr β -rays and the ALIBAVA fast readout system for the miniature sensors of 1 cm × 1 cm in area. The samples were irradiated by protons in the 27 MeV Birmingham Cyclotron, the 70 MeV CYRIC at Tohoku University, and the 24 GeV CERN-PS, and by neutrons at Ljubljana TRIGA reactor for fluence values up to 2 × 10 15 n eq /cm 2 . The change in the charge collection with fluence was found to be similar to the previous prototype ATLAS12, and acceptable for the ITk. Sensors with two active thicknesses, 300 μ m (standard) and 240 μ m (thin), were compared and the difference in the charge collection was observed to be small for bias voltages up to 500 V. Some samples were also irradiated with gamma radiation up to 2 MGy, and the full depletion voltage was found to decrease with the dose. This was caused by the Compton electrons due to the 60 Co gamma radiation. To summarize, the design of the ATLAS17LS and technology for its fabrication have been verified for implementation in the ITk. We are in the stage of sensor pre-production with the first sensors already delivered in January of 2020.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Surface-Defect-Passivation-Enabled Near-Unity Charge Collection Efficiency in Bromide-Based Perovskite Gamma-Ray Spectrum Devices

Hybrid lead halide perovskites have superior charge transport properties to all-inorganic perovskites, but high-resolution spectroscopic radiation detectors have not been realized. Here we show that surface deep traps severely limit charge collection in formamidinium lead bromide (FAPbBr3) single-crystal devices, despite having a good bulk transport property. Three types of defect on the crystal surface, namely, FA vacancies, uncoordinated lead and Pb-Pb dimers caused by bromide loss, are found to form deep traps, resulting in non-radiative charge recombinations at the metal/perovskite interface. By tailoring the passivation functional groups, we find that ammonium bromide can passivate all these three deep traps on FAPbBr3 surfaces, improving the charge collection efficiency to near unity. The comparable bulk and surface recombination lifetimes indicate that all the surface defects are effectively passivated. Surface passivation also reduces the dark current by 10 times and decreases the dark counts by ~60 times. The energy resolution of the 137Cs spectra acquired using the FAPbBr3 detectors is improved from 5.7% to 1.7% when all the surface defects are passivated without changing the bulk properties, which is the best among solution-grown semiconductor detectors. Surface passivation is stable for more than six months, and FAPbBr3 spectroscopic detectors can operate at unprecedented high temperatures of more than 130 degrees C.

gamma ray↗
DOE OSTI2026

DOE EV Data Collection - Charging Data

Charging data are collected from one of three sources, each with varying levels of additional information. These sources, in approximate order from most to least additional information, are: • The electric vehicle supply equipment (charger) • Onboard the vehicle itself • From a utility submeter. Many chargers provide software that allows for the collection and reporting of charging session data. If unavailable, data may be recorded by the charging vehicle’s onboard systems. If neither of these options is available, data can be acquired from utility submeters that simply track the energy flowing to one or more chargers. Data collected directly from the electric vehicle supply equipment (EVSE) are typically the most accurate and highest frequency. However, it is not always possible to discern which exact vehicle is being charged during any one session. EVSE-side data can be identified where a single charger ID but a range of vehicle IDs are present (e.g., CH001, EV001-EV005). Data collected from the vehicle’s onboard systems usually does not provide information on which exact charger is being used. Vehicle-side data can be identified where a single Vehicle ID but a range of Charger IDs are present (e.g., EV001, CH001-CH005). Data collected from utility submeters provide no information on which specific vehicle is charging or which specific charger is in use. Submeter data can be identified where multiple Vehicle IDs and multiple Charger IDs are present, but only a single Fleet ID is present (e.g., EV001-EV005, CH001-CH005, Fleet01). The **Charge Data Daily/Session Dictionaries** contains definitions for each available parameter collected as part of an individual charging session, aggregated at either a daily or session level. The parameters available will vary between vehicles and chargers. The **Charger Attributes** table contains specific charger characteristics, coded to at least one anonymous Charger ID and linked to either a single or a range of Vehicle IDs. Vehicle ID can be used as a key between charging data and vehicle attribute tables. The **Charger Attributes Data Dictionary** contains definitions for each available parameter collected on the physical and operational characteristics of the charging hardware itself. The **Vehicle Attributes Data Dictionary** contains definitions for each available parameter associated with a vehicle’s physical and functional attributes and fleet context. The **Vehicle Attributes** table contains specific vehicle characteristics, coded to an anonymous Vehicle ID. This Vehicle ID can be used as a key between vehicle data and vehicle attribute tables, and in cases where charging data are supplied, links a vehicle with the charger(s) that supplied it power. The **Charging Data** tables contain the data from each charger’s operations, coded to at least one anonymous Charger ID and linked to either a single or a range of Vehicle IDs. Vehicle ID can be used as a key between charging data and vehicle attribute tables. Data is being uploaded quarterly through 2023 and subject to change until the conclusion of the project.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Charge collection in h -BN neutron detectors at elevated temperatures

Many of the neutron detector applications are in the environments with harsh conditions such as high temperatures. We report here the measurements of charge collection parameters of hexagonal boron nitride (h-BN) detectors at elevated temperatures, including the electron mobility-lifetime product (μτ) and surface recombination field (s/μ). It was found that μτ is increased, while s/μ is decreased as temperature increases. The temperature dependence of the surface recombination field (s/μ) revealed that electrons trapped in the surface states tend to thermally activate to the bulk region at higher temperatures with an activation energy of about 0.22 eV, leading to a reduction in the density of the charged surface states at elevated temperatures. Consequently, the charge collection efficiency is enhanced at elevated temperatures due to a reduced surface recombination field and increased electron mobility-lifetime product. The results suggested that h-BN neutron detectors are favorable for high temperature operation.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Unraveling Fano noise and the partial-charge-collection effect in x-ray spectra below 1 keV

Fano noise, readout noise, and the partial-charge-collection (PCC) effect collectively contribute to the degradation of energy spectra in charge-coupled device (CCD) measurements, especially at low energies. Here, in this work, the x rays produced by the fluorescence of fluorine (677 eV) and aluminum (1486 eV) were recorded using a Skipper-CCD, which enabled the readout noise to be reduced to 0.2 e - . Based on an analytical description of photopeak shapes resulting from the convolution of the PCC effect and Fano noise, we achieved a precise characterization of the energy spectra. This description enabled us to disentangle and quantify the contributions from both Fano noise and the PCC effect. As a result, we determined the Fano factor and the electron-hole pair creation energy. Additionally, we estimated the PCC region of the sensor and, for the first time, experimentally observed the expected skewness of photopeaks at low energies.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Characterization of Partial Charge Collection Induced by Neutron Damage in High-Purity Germanium Detectors

This paper investigates the correlation of damage induced by neutron interactions and degradation in the spectra of HPGe detectors. As neutrons kinetically interact with germanium crystals, they create interstitial and vacancy defects within the lattice. These defects then interfere with the charge migration of electron-hole pairs and reduce resolution in the observed energy spectrum. The partial charge collection produces observable spectral changes by increasing the peak width and reducing resolution (full width half maximum). A detailed characterization using various check sources was performed before and after iterations of neutron exposure in order to observe the effects of the neutron damage. An additional set of measurements was performed along with characterizations to show the detector’s response at discrete locations on the HPGe crystal. This was done to observe how the spectrum changes when the gamma rays are isolated to regions of various thicknesses of germanium. In order to impart damage, the detector was placed inside a californium shuffler with the face of the detector against the guide tube for the 252 Cf source. For irradiation of the HPGe, the source was then positioned in front of the face of the detector using the stepper motor of the shuffler. The neutron exposure time intervals were recorded and increased based on the initial damage observed. An MCNP simulation was performed to estimate the amount of interactions that occurred in the germanium crystal to ensure enough damage had occurred. Studying the effects that neutron damage imparts on a bullet-type HPGe detector can help provide necessary data to estimate total neutron exposure limits, reduce the likelihood of decisions made on suspect data, and aid in diagnostics of a damaged detector.

36 MATERIALS SCIENCE↗
DOE OSTI2021

The Effect of Radiation Damage on the Charge Collection Efficiency of Silicon Avalanche Photodiodes

Understanding radiation effects on avalanche photodiodes (APDs) is important because they are used in several applications involving harsh radiation environments. APDs are used as photosensors in applications where speed and detection efficiency are critical. Proton irradiation experiments on a commercial off-the-shelf APD demonstrated that the irradiation flux and applied reverse bias have a strong influence on the severity of radiation effects. This is measured using the ion beam induced charge (IBIC) technique in which charge collection efficiency (CCE) describes the signal response from a device. CCE can degrade substantially due to radiation damage, but recent measurements show that certain combinations of irradiation flux and reverse bias can lead to increases in CCE up to 186% ± 24% for irradiations with 2 MeV protons at a fluence of 6.4 × 10 11 cm –2 . This defect-enhanced charge multiplication (DECM) only appeared when the reverse bias during irradiation ranged from 170 to 1830 V out of a maximum operating bias of 2000 V and the proton flux ranged from 9.8 × 10 7 to 3.4 × 10 9 cm –2 s –1 . Furthermore values outside of either range led to losses in CCE. It is expected that DECM should be encountered in other devices, especially those with sufficiently high electric fields to cause impact ionization.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. Here, the detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241 Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ~ 1.5 x 10 12 α cm –2 . Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6 x 10 12 α cm –2 cm.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

The importance of shear on the collective charge transport in CDWs revealed by an XFEL source

Charge transport in materials has an impact on a wide range of devices based on semiconductor, battery, or superconductor technology. Charge transport in sliding charge density waves (CDW) differs from all others in that the atomic lattice is directly involved in the transport process. To obtain an overall picture of the structural changes associated to the collective transport, the large coherent x-ray beam generated by an x-ray free-electron laser (XFEL) source was used. The CDW phase can be retrieved over the entire sample from diffracted intensities using a genetic algorithm. For currents below threshold, increasing shear deformation is observed in the central part of the sample while longitudinal deformation appears above threshold when shear relaxes. Shear thus precedes longitudinal deformation, with relaxation of one leading to the appearance of the other. Moreover, strain accumulates on surface steps in the sliding regime, demonstrating the strong pinning character of these surface discontinuities. The sliding process of nanometric CDW involves macroscopic sample dimensions.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Use of diamond sensors for a high-flux, high-rate X-ray pass-through diagnostic

X-ray free-electron lasers (XFELs) deliver pulses of coherent X-rays on the femtosecond time scale, with potentially high repetition rates. While XFELs provide high peak intensities, both the intensity and the centroid of the beam fluctuate strongly on a pulse-to-pulse basis, motivating high-rate beam diagnostics that operate over a large dynamic range. The fast drift velocity, low X-ray absorption and high radiation tolerance properties of chemical vapour deposition diamonds make these crystals a promising candidate material for developing a fast (multi-GHz) pass-through diagnostic for the next generation of XFELs. A new approach to the design of a diamond sensor signal path is presented, along with associated characterization studies performed in the XPP endstation of the LINAC Coherent Light Source (LCLS) at SLAC. Qualitative charge collection profiles (collected charge versus time) are presented and compared with those from a commercially available detector. Quantitative results on the charge collection efficiency and signal collection times are presented over a range of approximately four orders of magnitude in the generated electron–hole plasma density.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗