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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching.

Bailey, Sheila G.↗
NASA NTRS1976

Changes in boron fiber strength due to surface removal by chemical etching

The effects of chemical etching on the tensile strength of commercial boron/tungsten fibers were investigated. Fibers with as-received diameters of 203, 143, and 100 micrometers were etched to diameters as small as 43 micrometers. The etching generally resulted in increasing fiber tensile strength with decreasing fiber diameter. And for the 203 micrometer fibers there was an accompanying significant decrease in the coefficient of variation of the tensile strength for diameters down to 89 micrometers. Heat treating these fibers above 1,173 K in a vacuum caused a marked decrease in the average tensile strength of at least 80 percent. But after the fibers were etched, their strengths exceeded the as-received strengths. The tensile strength behavior is explained in terms of etching effects on surface flaws and the residual stress pattern of the as-received fibers.

Smith, R. J.↗
NASA NTRS1988

Nonaqueous chemical etch for YBa2Cu3O(7-x)

A nonaqueous chemical etch, with Br as the active ingredient, is described which removes the insulating hydroxides and carbonates that form on high-temperature superconductor surfaces as a result of atmospheric exposure. X-ray photoemission spectra have been recorded before and after etching YBa2Cu3O(7-x) films. It is found that, after the etch, the high binding energy O 1s and Ba 3d peaks associated with surface contaminants are greatly reduced, the Y:Ba:Cu ratio is close to the expected 1:2:3, and the oxidation state of the Cu(2+) is not affected. The resistance of an etched film reaches zero at 78 K, compared to 81 K for a similar unetched film. The suitability of other nonaqueous halogen-based etches is discussed, as is the applicability of this etch to other high-Tc superconductors.

Vasquez, R. P.↗
NASA NTRS1997

High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

Lakew, B.↗
NASA NTRS2008

Fabrication of nano-gap electrode arrays by the construction and selective chemical etching of nano-crosswire stacks

Methods of fabricating nano-gap electrode structures in array configurations, and the structures so produced. The fabrication method involves depositing first and second pluralities of electrodes comprising nanowires using processes such as lithography, deposition of metals, lift-off processes, and chemical etching that can be performed using conventional processing tools applicable to electronic materials processing. The gap spacing in the nano-gap electrode array is defined by the thickness of a sacrificial spacer layer that is deposited between the first and second pluralities of electrodes. The sacrificial spacer layer is removed by etching, thereby leaving a structure in which the distance between pairs of electrodes is substantially equal to the thickness of the sacrificial spacer layer. Electrode arrays with gaps measured in units of nanometers are produced. In one embodiment, the first and second pluralities of electrodes are aligned in mutually orthogonal orientations.

Son, Kyung-Ah↗
NASA NTRS1983

Compositional depth profile of a native oxide LPCVD MNOS structure using X-ray photoelectron spectroscopy and chemical etching

It is pointed out that there is no report of an unambiguous analysis of the composition and interfacial structure of MNOS (metal-nitride oxide semiconductor) systems, despite the technological importance of these systems. The present investigation is concerned with a study of an MNOS structure on the basis of a technique involving the use of X-ray photoelectron spectroscopy (XPS) with a controlled stopped-flow chemical-etching procedure. XPS is sensitive to the structure of surface layers, while stopped-flow etching permits the controlled removal of overlying material on a scale of atomic layers, to expose new surface layers as a function of thickness. Therefore, with careful analysis of observed intensities at measured depths, this combination of techniques provides depth resolution between 5 and 10 A. According to the obtained data there is intact SiO2 at the substrate interface. There appears to be a thin layer containing excess bonds to silicon on top of the SiO2.

Wurzbach, J. A.↗
NASA NTRS1975

Sputtered gold mask for deep chemical etching of silicon

Sputtered mask resists chemical attack from acid and has adherence to withstand prolonged submergence in etch solution without lifting from silicon surface. Even under prolonged etch conditions with significant undercutting, gold mask maintained excellent adhesion to silicon surface and imperviousness to acid.

Pisciotta, B. P.↗
NASA NTRS1969

Multiple-mask chemical etching

Multiple masking techniques use lateral etching to reduce the total area of the high etch-rate oxide exposed to the chemical etchant. One method uses a short-term etch to remove the top layer from the silicon oxide surface, another acts before the top layer is grown.

Cannon, D. L.↗
NASA NTRS1980

Precise wet-chemical etching

Controlled amount of etchant applied to surface of rotating sample removes only few angstroms of material. Technique is suited to study of chemical and crystal structures. Rate can be varied through control of spin frequency, liquid viscosity, droplet size, total etchant volume, etchant concentration.

Grunthaner, F. J.↗
NASA NTRS1991

X-ray photoelectron spectroscopy study of chemically-etched Nd-Ce-Cu-O surfaces

Acetic acid, Br2, and HCl solutions are investigated for removing insulating species from Nd(1.85)Ce(0.15)CuO(4-delta) (NCCO) thin film surfaces. X-ray photoelectron spectroscopy (XPS) shows that the HCl etch is most effective, yielding O 1s spectra comparable to those obtained from samples cleaned in vacuum and a clear Fermi edge in the valence band region. Reduction and oxidation reversibly induces and eliminates, respectively, Fermi level states for undoped samples, but has no clearly observable effect on the XPS spectra for doped samples. Reactivity to air is much less for NCCO compared to hole superconductors, which is attributed to the lack of reactive alkaline earth elements in NCCO.

Vasquez, R. P.↗
NASA NTRS2008

Part Marking and Identification Materials on MISSE

Many different spacecraft materials were flown as part of the Materials on International Space Station Experiment (MISSE), including several materials used in part marking and identification. The experiment contained Data Matrix symbols applied using laser bonding, vacuum arc vapor deposition, gas assisted laser etch, chemical etch, mechanical dot peening, laser shot peening, and laser induced surface improvement. The effects of ultraviolet radiation on nickel acetate seal versus hot water seal on sulfuric acid anodized aluminum are discussed. These samples were exposed on the International Space Station to the low Earth orbital environment of atomic oxygen, ultraviolet radiation, thermal cycling, and hard vacuum, though atomic oxygen exposure was very limited for some samples. Results from the one-year exposure on MISSE-3 and MISSE-4 are compared to those from MISSE-1 and MISSE-2, which were exposed for four years. Part marking and identification materials on the current MISSE -6 experiment are also discussed.

Finckenor, Miria M.↗
NASA NTRS2008

Part Marking and Identification Materials' for MISSE

The Materials on International Space Station Experiment (MISSE) is being conducted with funding from NASA and the U.S. Department of Defense, in order to evaluate candidate materials and processes for flight hardware. MISSE modules include test specimens used to validate NASA technical standards for part markings exposed to harsh environments in low-Earth orbit and space, including: atomic oxygen, ultraviolet radiation, thermal vacuum cycling, and meteoroid and orbital debris impact. Marked test specimens are evaluated and then mounted in a passive experiment container (PEC) that is affixed to an exterior surface on the International Space Station (ISS). They are exposed to atomic oxygen and/or ultraviolet radiation for a year or more before being retrieved and reevaluated. Criteria include percent contrast, axial uniformity, print growth, error correction, and overall grade. MISSE 1 and 2 (2001-2005), MISSE 3 and 4 (2006-2007), and MISSE 5 (2005-2006) have been completed to date. Acceptable results were found for test specimens marked with Data Matrix(TradeMark) symbols by Intermec Inc. and Robotic Vision Systems Inc using: laser bonding, vacuum arc vapor deposition, gas assisted laser etch, chemical etch, mechanical dot peening, laser shot peening, laser etching, and laser induced surface improvement. MISSE 6 (2008-2009) is exposing specimens marked by DataLase(Registed TradeMark), Chemico technologies Inc., Intermec Inc., and tesa with laser-markable paint, nanocode tags, DataLase and tesa laser markings, and anodized metal labels.

Roxby, Donald↗
NASA NTRS1983

Etching Integrated Circuits

20-page report reviews methods available for etching specific layers on wafers and discusses automation techniques and features on one particular automated system. Compares two major etching methods, chemical (wet) and plasma (dry), and discusses areas in need of development. Methods covered include "dip-and-dunk" manual method of chemical etching, automated chemical etching, and plasma etching.

Kennedy, B. W.↗