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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Toward exascale whole-device modeling of fusion devices: Porting the GENE gyrokinetic microturbulence code to GPU

GENE solves the five-dimensional gyrokinetic equations to simulate the development and evolution of plasma microturbulence in magnetic fusion devices. The plasma model used is close to first principles and computationally very expensive to solve in the relevant physical regimes. In order to use the emerging computational capabilities to gain new physics insights, several new numerical and computational developments are required. Here, we focus on the fact that it is crucial to efficiently utilize GPUs (graphics processing units) that provide the vast majority of the computational power on such systems. In this paper, we describe the various porting approaches considered and given the constraints of the GENE code and its development model, justify the decisions made, and describe the path taken in porting GENE to GPUs. We introduce a novel library called gtensor that was developed along the way to support the process. Performance results are presented for the ported code, which in a single node of the Summit supercomputer achieves a speed-up of almost 15× compared to running on central processing unit (CPU) only. Typical GPU kernels are memory-bound, achieving about 90% of peak. Our analysis shows that there is still room for improvement if we can refactor/fuse kernels to achieve higher arithmetic intensity. We also performed a weak parallel scalability study, which shows that the code runs well on a massively parallel system, but communication costs start becoming a significant bottleneck.

Germaschewski, K. (ORCID:0000000284956354)↗

Device modeling

A summary report is given of the activities of the device modeling workshop which was held as a part of the Space Photovoltaic Research and Technology Conference at the Lewis Research Center, October 7 to 9, 1986. The purpose of this workshop was to access the status of solar cell device modeling to see if it is meeting present and future needs of the photovoltaic community.

Schwartz, Richard↗

Understanding the Breakdown Behavior of Ultrawide-Bandgap Boron Nitride Power Diodes Using Device Modeling

Herein, a device study using technology computer-aided design simulation to theoretically analyze the electrical performance of ultrawide-bandgap boron nitride (BN)-based vertical junction devices is performed, including h-BN Schottky diode, h-BN pn diode, and h-BN/AlN pn diode; this is also the first demonstration of the BN power devices in simulation. The material properties of BN are defined with recently reported data, and the physical mechanisms of the device performance are systematically investigated. Additionally, the h-BN junctions in this simulation shows excellent performance, especially for breakdown behaviors. Schottky diode shows a turn-on voltage of 0.6 V for Pt Schottky contact and breakdown voltages over 450 V for 5 μm, 6 × 10 15 cm –3 p-type-doped drift layer; The h-BN pn diode shows a turn-on voltage of 6 V and breakdown voltages over 3 kV with a critical electric field of 13.6 MV cm –1 for 2.5 μm, 2 × 10 16 cm –3 p-type-doped drift layer. The h-BN/AlN heterojunction pn diode shows a turn-on voltage of 5.8 V and breakdown voltage over 2 kV for 2.5 μm, 2 × 10 16 cm –3 n-type-doped AlN drift layer. Herein, an understanding of the device principles of vertical BN junctions is provided, which can serve as a reference for the future development of robust BN power electronics.

36 MATERIALS SCIENCE↗

Verilog-A Device Models for Cryogenic Temperature Operation of Bulk Silicon CMOS Devices

Verilog-A based cryogenic bulk CMOS (complementary metal oxide semiconductor) compact models are built for state-of-the-art silicon CMOS processes. These models accurately predict device operation at cryogenic temperatures down to 4 K. The models are compatible with commercial circuit simulators. The models extend the standard BSIM4 [Berkeley Short-channel IGFET (insulated-gate field-effect transistor ) Model] type compact models by re-parameterizing existing equations, as well as adding new equations that capture the physics of device operation at cryogenic temperatures. These models will allow circuit designers to create optimized, reliable, and robust circuits operating at cryogenic temperatures.

Akturk, Akin↗

A device model for the tandem junction solar cell

A conceptual device model has been developed to explain operation of the tandem junction cell (TJC) when back contacts only are used. Operation and parameters of the cell are explained by transistor action. Experimental observations are presented which confirm that current is collected for carrier generation in the front uncontacted n(plus) region. The model should be useful as a guideline to optimize the TJC by application of transistor design principles.

Matzen, W. T.↗

NASA Workmanship Hot Topics: Water Soluble Flux and ESD Charge Device Model

This slide presentation reviews two topics of interest to NASA Workmanship: (1) Water Soluble Flux (WSF) and Electrostatic Discharge (ESD) safety. In the first topic, WSF, the presentation reviews voiding and the importance of cleanliness in using WSF for welding and soldering operations. The second topic reviews the NASA-HDBK-8739.21 for Human Body Model, and Machine Model safety methods, and challenges associated with the Charged Device Model (CDM)

Plante, Jeannette F.↗

The Exascale Framework for High Fidelity coupled Simulations (EFFIS): Enabling whole device modeling in fusion science

We present the Exascale Framework for High Fidelity coupled Simulations (EFFIS), a workflow and code coupling framework developed as part of the Whole Device Modeling Application (WDMApp) in the Exascale Computing Project. EFFIS consists of a library, command line utilities, and a collection of run-time daemons. Together, these software products enable users to easily compose and execute workflows that include: strong or weak coupling, in situ (or offline) analysis/visualization/monitoring, command-and-control actions, remote dashboard integration, and more. We describe WDMApp physics coupling cases and computer science requirements that motivate the design of the EFFIS framework. Furthermore, we explain the essential enabling technology that EFFIS leverages: ADIOS for performant data movement, PerfStubs/TAU for performance monitoring, and an advanced COUPLER for transforming coupling data from its native format to the representation needed by another application. Finally, we demonstrate EFFIS using coupled multi-simulation WDMApp workflows and exemplify how the framework supports the project’s needs. We show that EFFIS and its associated services for data movement, visualization, and performance collection does not introduce appreciable overhead to the WDMApp workflow and that the resource-dominant application’s idle time while waiting for data is minimal.

97 MATHEMATICS AND COMPUTING↗

Opportunities and Challenges of Computational Electromagnetics Methods for Superconducting Circuit Quantum Device Modeling: A Practical Review

High-fidelity numerical methods that model the physical layout of a device are essential for the design of many technologies. For methods that characterize electromagnetic effects, these numerical methods are referred to as computational electromagnetics (CEM) methods. Although the CEM research field is mature, emerging applications can still stress the capabilities of the techniques in use today. The design of superconducting circuit quantum devices falls in this category due to the unconventional material properties and important features of the devices covering nanometer to centimeter scales. Such multiscale devices can stress the fundamental properties of CEM tools which can lead to an increase in simulation times, a loss in accuracy, or even cause no solution to be reliably found. While these challenges are being investigated by CEM researchers, knowledge about them is limited in the broader community of users of these CEM tools. This review is meant to serve as a practical introduction to the fundamental aspects of the major CEM techniques that a researcher may need to choose between to model a device, as well as provide insight into what steps they may take to alleviate some of their challenges. Our focus is on highlighting the main concepts without rigorously deriving all the details, which can be found in many textbooks and articles. After covering the fundamentals, we discuss more advanced topics related to the challenges of modeling multiscale devices with specific examples from superconducting circuit quantum devices. We conclude with a discussion on future research directions that will be valuable for improving the ability to successfully design increasingly more sophisticated superconducting circuit quantum devices. Although our focus and examples are taken from this area, researchers from other fields will still benefit from the details discussed here.

Elkin, Samuel T. [Virginia Tech., Blacksburg]↗

Whole device modeling of the fuze sheared-flow-stabilized Z pinch

Abstract The FuZE sheared-flow-stabilized Z pinch at Zap Energy is simulated using whole-device modeling employing an axisymmetric resistive magnetohydrodynamic formulation implemented within the discontinuous Galerkin WARPXM framework. Simulations show formation of Z pinches with densities of approximately 10 22 m −3 and total DD fusion neutron rate of 10 7 per µ s for approximately 2 µ s. Simulation-derived synthetic diagnostics show peak currents and voltages within 10% and total yield within approximately 30% of experiment for similar plasma mass. The simulations provide insight into the plasma dynamics in the experiment and enable a predictive capability for exploring design changes on devices built at Zap Energy.

Physics↗

Atoms-to-devices models for post-irradiation annealing kinetics in III-V semiconductors

Understanding atomic displacement damage and propagating this understanding into validated defect-aware radiation damage models is a critical step toward achieving predictive, atoms-to-systems assessment of radiation vulnerabilities of microelectronics. These models are essential for evaluating the performance and reliability of nuclear stockpile components or space-based electronics (satellites). The goal of this project was to bridge a fundamental science gap between defect spectroscopies and atomistic modeling of radiation-induced defects on the one hand, and simulations of device response on the other hand, to develop predictive defect-aware damage models for high-fidelity device simulations of radiation-damaged III-V semiconductors.

36 MATERIALS SCIENCE↗

Multiple-amplifier sensing charged-coupled device: model and improvement of the node removal efficiency

The multiple-amplifier sensing charge-coupled device (MAS-CCD) has emerged as a promising technology for astronomical observation, quantum imaging, and low-energy particle detection due to its ability to reduce the readout time for the same readout noise level compared with its predecessor, the skipper-CCD, by reading out the same charge packet through multiple inline amplifiers. Previous works identified a new parameter in this sensor, called node removal inefficiency (NRI), related to inefficiencies in charge transfer and residual charge removal from the sense node of each amplifier after readout. These inefficiencies can lead to distortions in the measured signals similar to those produced by the charge transfer inefficiencies in standard CCDs. We introduce more details in the mathematical model of the NRI mechanism and provide techniques to quantify its magnitude from the measured data. It also proposes a new operation strategy that significantly reduces its effect with minimal alterations of the timing sequences or voltage settings for the other signals of the sensor. The proposed technique is demonstrated experimentally on a 16-amplifier MAS-CCD. At the same time, the experimental data demonstrate that this approach minimizes the NRI effect to levels comparable with other sources of distortion such as the charge transfer inefficiency in scientific devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Device model for FETSIM circuit simulation program

A description of the MOS transistor used in the FETSIM analysis program is presented. CMOS/SOS device parameters are included. Typical device mobilities are given as well as the empirically determined constants necessary to model second-order effect conductance variations due to gate voltage and saturated drain voltage.

Ramondetta, P.↗

Development and Evaluation of Distributed Energy Resource Device Models: Electric Vehicles, Electric Water Heaters, and Commercial Refrigeration Systems

In order to validate distributed energy resource (DER) models operated with grid services in the GMLC 1.4.2 team’s February (GMLC 2019a) and July (GMLC 2019b) reports, a test and measurement program using actual DER devices was conducted by national laboratories for three devices: (1) electric vehicles (EVs), (2) water heaters, and (3) commercial refrigeration. Test procedures were developed and carried out to identify the mathematical models and their parameters that describe the operational function, characterize the physics, and obey transient response of the devices. This report focuses on the experimental results obtained to develop and verify simulations of three specific EV models. This section summarizes elements of the mathematical model and shows the necessity data collected from the EVs while charging and discharging (driving). In the course of the study, we found it necessary to make some modifications to the model to deal with observed transient behavior. Section 1.2 details the model assumptions and equations, Section 1.3 provides details of the EVs tested, Section 1.4 outlines the test procedures developed for the projects, and Section 1.5 presents the experimental results obtained for the three different EVs tested and how these results compare to the models running the same test profiles.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Ultra-Low Noise HEMT Device Models: Application of On-Wafer Cryogenic Noise Analysis and Improved Parameter Extraction Techniques

Significant advances in the development of HEMT technology have resulted in high performance cryogenic low noise amplifiers whose noise temperatures are within an order of magnitude of the quantum noise limit. Key to the identification of optimum HEMT structures at cryogenic temperatures is the development of on-wafer noise and device parameter extraction techniques. Techniques and results are described.

electronic materials↗

Self-organized confinement in whole-device modeling of laboratory magnetospheres

Turbulent self-organization driven by global ideal interchange modes in a dipole-confined plasma is explored with self-consistent, whole-plasma simulations using a flux-tube averaged magnetohydrodynamic model in dipole magnetic geometry. We show the existence of robust particle pinch driven by ideal interchange-mode fluctuations, in which the particles are transported up the density gradient. It is found that the plasma profiles in a dipole field spontaneously relax to a marginally stable state as centrally peaked pressure and density are created by global interchange-mode transport.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗