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Results for “device scaling”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Scaling device for photographic images

A scaling device projects a known optical pattern into the field of view of a camera, which can be employed as a reference scale in a resulting photograph of a remote object, for example. The device comprises an optical beam projector that projects two or more spaced, parallel optical beams onto a surface of a remotely located object to be photographed. The resulting beam spots or lines on the object are spaced from one another by a known, predetermined distance. As a result, the size of other objects or features in the photograph can be determined through comparison of their size to the known distance between the beam spots. Preferably, the device is a small, battery-powered device that can be attached to a camera and employs one or more laser light sources and associated optics to generate the parallel light beams. In a first embodiment of the invention, a single laser light source is employed, but multiple parallel beams are generated thereby through use of beam splitting optics. In another embodiment, multiple individual laser light sources are employed that are mounted in the device parallel to one another to generate the multiple parallel beams.

Rivera, Jorge E.↗
NASA NTRS2008

Featured Invention: Laser Scaling Device

In September 2003, NASA signed a nonexclusive license agreement with Armor Forensics, a subsidiary of Armor Holdings, Inc., for the laser scaling device under the Innovative Partnerships Program. Coupled with a measuring program, also developed by NASA, the unit provides crime scene investigators with the ability to shoot photographs at scale without having to physically enter the scene, analyzing details such as bloodspatter patterns and graffiti. This ability keeps the scene's components intact and pristine for the collection of information and evidence. The laser scaling device elegantly solved a pressing problem for NASA's shuttle operations team and also provided industry with a useful tool. For NASA, the laser scaling device is still used to measure divots or damage to the shuttle's external tank and other structures around the launchpad. When the invention also met similar needs within industry, the Innovative Partnerships Program provided information to Armor Forensics for licensing and marketing the laser scaling device. Jeff Kohler, technology transfer agent at Kennedy, added, "We also invited a representative from the FBI's special photography unit to Kennedy to meet with Armor Forensics and the innovator. Eventually the FBI ended up purchasing some units. Armor Forensics is also beginning to receive interest from DoD [Department of Defense] for use in military crime scene investigations overseas."

Dunn, Carol Anne↗
DOE OSTI2019

Device-scale computational fluid dynamics modeling of carbon dioxide absorption using encapsulated sorbents

Micro-encapsulated carbon dioxide sorbent (MECS) is considered to be a promising material for carbon capture system because of high capture rate, low fabrication cost, and efficient energy consumption. To accelerate the development of MECS technology for industrial deployment, device-scale computational fluid dynamics (CFD) simulations are performed to study hydrodynamics and CO2 absorption behavior in a conceptual fluidized bed reactor. The two-fluid model solver, built in the Multiphase Flow with Interphase eXchanges (MFIX), is adopted to solve the multiphase flow hydrodynamics by representing both fluid and solids as continuous phases. Filtered models are implemented to capture the sub-grid effects that normally cannot be directly considered because MECS particles are too small to be explicitly resolved at such a large scale. Using established CFD tools, this study aims to characterize MECS behavior and predict its carbon capture performance in a conceptual device-scale absorber. The MECS particle size and gas flow rate have significant impact on CO2 capture efficiency. The CO2 capture efficiency decreases with increasing gas flow rate. Smaller particle size lead to better gas-solid homogeneity, as a results CO2 absorption efficiency increases.

Wang, Chao (ORCID:0000000279406614)↗
NASA NTRS2004

Single Event Effects in Highly Scaled Devices for Space Applications

This paper discusses single-event upset (SEU) in memories and microprocessors that are the "drivers" of highly scaled commercial integrated circuits. Despite the decrease in critical charge that occurs for highly scaled CMOS devices, recent test data has shown that SEU rates are actually somewhat lower for scaled devices compared to older devices with larger feature size. Hard errors, which are increasingly important for memories, are discussed along with conventional soft errors. Functional errors in memories and microprocessors are particularly significant, and tend to dominate the response of highly scaled devices from an application standpoint. Predictions for future devices are made using the Semiconductor Industry Roadmap along with recent modeling and radiation test results.

microelectronics↗
DOE OSTI2020

Absorber Column CFD model validation against PNNL’s device-scale absorber column on the LCFS unit

Absorber column has been widely used for CO 2 capture in the coal-fired power plants. High-fidelity CFD models play an important role in absorber column design and solvents optimization, which help enhance the CO 2 capture efficiency and reduce the operation cost. This report provides a comprehensive description of the development of CFD absorber models at two different levels, the design and implementation of PNNL’s device-scale absorber column experiment, and the methodology to combine the CFD results, experiment data, and Aspen model for a better understanding of the interface area in packed column. A composite model is firstly proposed in the Discrete Element Method (DEM) packing process, which can model the complex geometry of various packing elements. This generates a realistic packing pattern and accurate packing porosity ε and specific area a p compared to the actual values for absorber column used in LCFS. Two level of CFD absorber models were developed, namely the full-size column model (FCM) to simulate the entire packed column with a focus on the wall/entrance effects, and the representative column model (RCM) to simulate a section of column with a focus on the sensitivity study of interface area. A Design of Experiment (DoE) plan was developed to guide the collection of 100 run CFD data and 12 experiment runs. The 100 CFD runs were carried out in the RCM with Pro-Pak packing and cover a wide operation range and solvent properties. Impact of influential factors on the interface area in packed column were investigated in details. The CFD interface area was then combined with the experimental data and Aspen model to infer some information of the effective contact angle in the column. The accuracy and uncertainties in the interface area and contact angle can be quantified.

01 COAL, LIGNITE, AND PEAT↗
DOE OSTI2021

Electrochemical ion insertion from the atomic to the device scale

Electrochemical ion insertion involves coupled ion–electron transfer reactions, transport of guest species and redox of the host. The hosts are typically anisotropic solids with 2D conduction planes but can also be materials with 1D or isotropic transport pathways. These insertion compounds have traditionally been studied in the context of energy storage but also find extensive applications in electrocatalysis, optoelectronics and computing. Recent developments in operando, ultrafast and high-resolution characterization methods, as well as accurate theoretical simulation methods, have led to a renaissance in the understanding of ion-insertion compounds. In this Review, we present a unified framework for understanding insertion compounds across timescales and length scales ranging from atomic to device levels. Using graphite, transition metal dichalcogenides, layered oxides, oxyhydroxides and olivines as examples, we explore commonalities in these materials in terms of point defects, interfacial reactions and phase transformations. We illustrate similarities in the operating principles of various ion-insertion devices, ranging from batteries and electrocatalysts to electrochromics and thermal transistors, with the goal of unifying research across disciplinary boundaries.

36 MATERIALS SCIENCE↗
NASA NTRS1986

Forward-bias tunneling - A limitation to bipolar device scaling

Forward-bias tunneling is observed in heavily doped p-n junctions of bipolar transistors. A simple phenomenological model suitable to incorporation in device codes is developed. The model identifies as key parameters the space-charge-region (SCR) thickness at zero bias and the reduced doping level at its edges which can both be obtained from CV characteristics. This tunneling mechanism may limit the maximum gain achievable from scaled bipolar devices.

Del Alamo, Jesus A.↗
DOE OSTI2021

Al-alkyls as acceptor dopant precursors for atomic-scale devices

Atomically precise ultradoping of silicon is possible with atomic resists, area-selective surface chemistry, and a limited set of hydride and halide precursor molecules, in a process known as atomic precision advanced manufacturing (APAM). It is desirable to expand this set of precursors to include dopants with organic functional groups and in this work we consider aluminium alkyls, to expand the applicability of APAM. We explore the impurity content and selectivity that results from using trimethyl aluminium and triethyl aluminium precursors on Si(001) to ultradope with aluminium through a hydrogen mask. Comparison of the methylated and ethylated precursors helps us understand the impact of hydrocarbon ligand selection on incorporation surface chemistry. Combining scanning tunneling microscopy and density functional theory calculations, we assess the limitations of both classes of precursor and extract general principles relevant to each.

36 MATERIALS SCIENCE↗
NASA NTRS2005

Impact of Device Scaling on Deep Sub-micron Transistor Reliability: A Study of Reliability Trends using SRAM

As microelectronics are scaled in to the deep sub-micron regime, users of advanced technology CMOS, particularly in high-reliability applications, should reassess how scaling effects impact long-term reliability. An experimental based reliability study of industrial grade SRAMs, consisting of three different technology nodes, is proposed to substantiate current acceleration models for temperature and voltage life-stress relationships. This reliability study utilizes step-stress techniques to evaluate memory technologies (0.25mum, 0.15mum, and 0.13mum) embedded in many of today's high-reliability space/aerospace applications. Two acceleration modeling approaches are presented to relate experimental FIT calculations to Mfr's qualification data.

CMOS integrated circuits↗
NASA NTRS2010

Optical Modification of Casimir Forces for Improved Function of Micro-and Nano-Scale Devices

Recently, there has been a considerable effort to study the Casimir and van der Waals forces, enabled by the improved ability to measure small forces near surfaces. Because of the continuously growing role of micro- and nanomechanical devices, the focus of this activity has shifted towards the ability to control these forces. Possible approaches to manipulating the Casimir force include development of composite materials, engineered nanostructures, mixed-phase materials, or active elements. So far, practical success has been limited. The role of geometrical factors in the Casimir force is significant. It is known, for example, that the Casimir force between two spherical shells enclosed one into the other is repulsive instead of normal attractive. Unfortunately, nanosurfaces with this topology are very difficult to make. A more direct approach to manipulating and neutralizing the Casimir force is using external mechanical or electromagnetic forces. Unfortunately, the technological overhead of such an approach is quite large. Using electromagnetic compensation instead of mechanical will considerably reduce this overhead and at the same time provide the degree of control over the Casimir force that mechanical springs cannot provide. A mechanical analog behind Casimir forces is shown.

Strekalov, Dmitry V.↗
NASA NTRS2004

Measurement of Device Parameters Using Image Recovery Techniques in Large-Scale IC Devices

Devices that respond to radiation on a cell level will produce histograms showing the relative frequency of cell damage as a function of damage. The measured distribution is the convolution of distributions from radiation responses, measurement noise, and manufacturing parameters. A method of extracting device characteristics and parameters from measured distributions via mathematical and image subtraction techniques is described.

radiation↗
DOE OSTI2024

Modeling and Design of the Triton OWC System (Final Report)

Two versions of the Triton Oscillating Water Column type device will be modeled in WEC Sim. First, a model of a wave-tank scale device which can be tuned and validated against tank test data. Second, a model of the deployment-scale device will be constructed following the method of the tank-scale device to ensure that relevant physics are captured. In the latter case, the geometry, PTO architecture, and other design details are not yet finalized, so the model will serve as a platform for design iteration as time and budget allows. A subset of this iteration will be automated using existing WEC-Sim capabilities. A primary focus of this work will be familiarizing Triton personnel with the WEC-Sim workflow and model details so that the model of the deployment device can continue to be enhanced after project end.

16 TIDAL AND WAVE POWER↗
DOE OSTI2020

Machine learning coupled multi-scale modeling for redox flow batteries

The reaction distribution in macro or device-scale has been studied for redox flow batteries. The reaction distribution on electrode pore-scale structure however is not well understood, lacking especially on how the reaction distribution on the pore-scale may impact the overall performance of a flow battery. This study introduces for the first time a framework of a multi-scale model that provides understanding of the relationship between the pore-scale electrode structure reaction and the device-scale electrochemical reaction uniformity within the flow battery. A reduced order model is constructed based on 128 pore-scale simulations, which provide a quantitative relationship between the battery operation conditions (inlet velocity, current density, inlet concentration) and the surface reaction uniformity for the pore-scale sample. The multi-scale framework upscales this pore-scale surface reaction uniformity to device-scale combined uniformity. Based on the multi-scale model, a time-varying optimization of the inlet velocity is established, leading to significant reduction on pump power consumption with targeted surface reaction uniformity. The multi-scale model establishes the critical link between the micro-structure of a flow battery component and its performance at the macro-scale, therefore providing rationale for further operational or material optimization.

flow batteries, machine learning, multi-scale mode↗
DOE OSTI2020

Classical Optimizers for Noisy Intermediate-Scale Quantum Devices

We present a collection of optimizers tuned for usage on Noisy Inter-mediate-Scale Quantum (NISQ) devices. Optimizers have a range of applications in quantum computing, including the Variational Quantum Eigensolver (VQE) and Quantum Approximate Optimization (QAOA) algorithms. They have further uses in calibration, hyperparameter tuning, machine learning, etc. We employ the VQE algorithm as a case study. VQE is a hybrid algorithm, with a classical minimizer step driving the next evaluation on the quantum processor. While most results to date concentrated on tuning the quantum VQE circuit, our study indicates that in the presence of quantum noise the classical minimizer step is a weak link and a careful choice combined with tuning is required for correct results. We explore state-of-the-art gradient-free optimizers capable of handling noisy, black-box, cost functions and stress-test them using a quantum circuit simulation environment with noise injection capabilities on individual gates. Our results indicate that specifically tuned optimizers are crucial to obtaining valid science results on NISQ hardware, as well as projecting forward on fault tolerant circuits.

Lavrijsen, Wim↗
DOE OSTI2021

Towards quantum simulations in particle physics and beyond on noisy intermediate-scale quantum devices

We review two algorithmic advances that bring us closer to reliable quantum simulations of model systems in high-energy physics and beyond on noisy intermediate-scale quantum (NISQ) devices. The first method is the dimensional expressivity analysis of quantum circuits, which allows for constructing minimal but maximally expressive quantum circuits. The second method is an efficient mitigation of readout errors on quantum devices. Both methods can lead to significant improvements in quantum simulations, e.g. when variational quantum eigensolvers are used. This article is part of the theme issue ‘Quantum technologies in particle physics’.

Science & Technology - Other Topics↗
DOE OSTI2019

A General Approach for Lab‐to‐Manufacturing Translation on Flexible Organic Solar Cells

Abstract The blossoming of organic solar cells (OSCs) has triggered enormous commercial applications, due to their high‐efficiency, light weight, and flexibility. However, the lab‐to‐manufacturing translation of the praisable performance from lab‐scale devices to industrial‐scale modules is still the Achilles' heel of OSCs. In fact, it is urgent to explore the mechanism of morphological evolution in the bulk heterojunction (BHJ) with different coating/printing methods. Here, a general approach to upscale flexible organic photovoltaics to module scale without obvious efficiency loss is demonstrated. The shear impulse during the coating/printing process is first applied to control the morphology evolution of the BHJ layer for both fullerene and nonfullerene acceptor systems. A quantitative transformation factor of shear impulse between slot‐die printing and spin‐coating is detected. Compelling results of morphological evolution, molecular stacking, and coarse‐grained molecular simulation verify the validity of the impulse translation. Accordingly, the efficiency of flexible devices via slot‐die printing achieves 9.10% for PTB7‐Th:PC 71 BM and 9.77% for PBDB‐T:ITIC based on 1.04 cm 2 . Furthermore, 15 cm 2 flexible modules with effective efficiency up to 7.58% (PTB7‐Th:PC 71 BM) and 8.90% (PBDB‐T:ITIC) are demonstrated with satisfying mechanical flexibility and operating stability. More importantly, this work outlines the shear impulse translation for organic printing electronics.

Meng, Xiangchuan↗