Technique for measuring dielectric loss tangent.
Dielectric loss tangent measurement in pyroelectric materials for EM radiation detectors and heat transfer sensors
DIELECTRIC MATERIAL↗
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Precision Measurement of the Microwave Dielectric Loss of Sapphire in the Quantum Regime with Parts-per-Billion Sensitivity
Dielectric loss is known to limit state-of-the-art superconducting qubit lifetimes. Recent experiments imply upper bounds on bulk dielectric loss tangents on the order of 100 parts per billion but because these inferences are drawn from fully fabricated devices with many loss channels, these experiments do not definitely implicate or exonerate the dielectric. To resolve this ambiguity, we devise a measurement method capable of separating and resolving bulk dielectric loss with a sensitivity at the level of 5 ×10 –9 . The method, which we call the dielectric dipper, involves the in situ insertion of a dielectric sample into a high-quality microwave cavity mode. Smoothly varying the participation of the sample in the cavity mode enables a differential measurement of the dielectric loss tangent of the sample. The dielectric dipper can probe the low-power behavior of dielectrics at cryogenic temperatures and does so without the need for any lithographic process, enabling controlled comparisons of substrate materials and processing techniques. We demonstrate the method with measurements of sapphire grown by edge-defined film-fed growth (EFG) in comparison to high-grade sapphire grown by the heat-exchanger method (HEMEX). For EFG sapphire, we infer a bulk loss tangent of 63(8) ×10 –9 and a substrate-air interface loss tangent of 15(3) ×10 –4 (assuming a sample surface thickness of 3 nm). For a typical transmon, this bulk loss tangent would limit device quality factors to Q ≲20 ×10 6 , suggesting that bulk loss is likely the dominant loss mechanism in the longest-lived transmons on sapphire. We also demonstrate this method on HEMEX sapphire and bound its bulk loss tangent to be less than 19(6) ×10 –9 . As this bound is about 3 times smaller than the bulk loss tangent of EFG sapphire, the use of HEMEX sapphire as a substrate would lift the bulk dielectric coherence limit of a typical transmon qubit to several milliseconds.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Acceptor-Induced Bulk Dielectric Loss in Superconducting Circuits on Silicon
The performance of superconducting quantum circuits is primarily limited by dielectric loss due to interactions with two-level systems (TLSs). State-of-the-art circuits with engineered material interfaces are approaching a limit where dielectric loss from bulk substrates plays an important role. However, a microscopic understanding of dielectric loss in crystalline substrates is still lacking. In this work, we show that boron acceptors in silicon constitute a TLS bath that leads to an energy dissipation channel for superconducting circuits. We discuss how the electronic structure of boron acceptors leads to an effective TLS response in silicon. We sweep the boron concentration in silicon and demonstrate the bulk dielectric loss limit from boron acceptors. We show that boron-induced dielectric loss can be reduced in a magnetic field due to the spin-orbit structure of boron. This work provides the first detailed microscopic description of a TLS bath for superconducting circuits and demonstrates the need for ultrahigh-purity substrates for next-generation superconducting quantum processors.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Measurement of Dielectric Loss in Silicon Nitride at Centimeter and Millimeter Wavelengths
This work presents a suite of measurement techniques for characterizing the dielectric loss tangent across a wide frequency range from similar to 1 GHz to 150 GHz using the same test chip. In the first method, we fit data from a microwave resonator at different temperatures to a model that captures the two-level system (TLS) response to extract and characterize both the real and imaginary components of the dielectric loss. The inverse of the internal quality factor is a second measure of the overall loss of the resonator, where TLS loss through the dielectric material is typically the dominant source. The third technique is a differential optical measurement at 150 GHz. The same antenna feeds two microstrip lines with different lengths that terminate in two microwave kinetic inductance detectors (MKIDs). The difference in the detector response is used to estimate the loss per unit length of the microstrip line. Our results suggest a larger loss for SiNx at 150 GHz of tan delta similar to 4 x 10(-3) compared to 2.0 x 10(-3) and greater than or similar to 1 x 10(-3) measured at similar to 1 GHz using the other two methods. These measurement techniques can be applied to other dielectrics by adjusting the microstrip lengths to provide enough optical efficiency contrast and other mm/sub-mm frequency ranges by tuning the antenna and feedhorn accordingly.
Dielectrics loss↗
Oxide-nitride heteroepitaxy for low-loss dielectrics in superconducting quantum circuits
Superconducting qubits show great promise for the realization of fault-tolerant quantum computing, but lossy, amorphous dielectrics limit current technology. Identifying highly crystalline and stoichiometric dielectrics with intrinsically low microwave loss is therefore a central materials challenge, yet experimentally validated platforms remain scarce. In this work, we integrate a crystalline dielectric into a heteroepitaxial TiN/$γ$-Al$_2$O$_3$/TiN trilayer grown via pulsed laser deposition. Correlative high-resolution imaging, diffraction, and spectroscopy measurements confirm the single-crystal quality and chemical integrity of all layers, with minimal defects and limited anion interdiffusion across the oxide-nitride interfaces. Using microwave lumped-element resonators with parallel-plate capacitors, we report the first direct measurement of the dielectric loss of epitaxial $γ$-Al$_2$O$_3$, for which we find a low intrinsic two-level system loss, $δ_{\text{TLS}}^0 = (2.8 \pm 0.1) \times 10^{-5}$. These results establish heteroepitaxial oxides on transition metal nitrides as an attractive materials platform for superconducting quantum circuits, particularly for integration into compact device architectures such as merged-element transmons and microwave kinetic inductance detectors.
Garcia-Wetten, David A. [Northwestern U.]↗
Dielectric loss in microstrip lines
A technique is presented for calculating dielectric loss in microstrip lines. Numerical results for several different substrates are included. These are compared with other available results and experimental data.
Simpson, T. L.↗
Permafrost - Relation between ice content and dielectric losses at 100 K
The dielectric response of permafrost at 100 K and vacuums of around 10 ntorr is analyzed, varying its percent ice content from 1 to 18.6. The distributions obtained correspond to dielectric relaxations of the Cole-Cole type, with maximum losses occurring in the 30- to 600-Hz frequency range. The logarithms of such maxima depend linearly on the permafrost ice content, two regions of linear variation being defined above and below 3.6% ice content. Such relations point out the feasibility of determining ice content in permafrost by electromagnetic means.
Alvarez, R.↗
Dielectric loss due to charged-defect acoustic phonon emission
The coherence times of state-of-the-art superconducting qubits are limited by bulk dielectric loss, yet the microscopic mechanism leading to this loss is unclear. Here, we propose that the experimentally observed loss can be attributed to the presence of charged defects that enable the absorption of electromagnetic radiation by the emission of acoustic phonons. Our explicit derivation of the absorption coefficient for this mechanism allows us to derive a loss tangent of 7.2 × 10−9 for Al2O3, in good agreement with recent high-precision measurements [Read et al., Phys. Rev. Appl. 19, 034064 (2023)]. We also find that for temperatures well below ∼0.2 K, the loss should be independent of temperature, which is also in agreement with observations. Our investigations show that the loss per defect depends mainly on properties of the host material, and a high-throughput search suggests that diamond, cubic BN, AlN, and SiC are optimal in this respect.
Turiansky, Mark E. (ORCID:0000000291543582)↗
Room temperature polar and weak-ferromagnetic oxide with low dielectric loss
Single-phase materials that are simultaneously ferroelectric and ferromagnetic at room temperature are promising for devices such as non-volatile random-access memory. Perovskite BiFeO 3 which crystallizes in the polar rhombohedral structure (R3c) is ferroelectric and antiferromagnetic at room temperature. Here, we report a family of perovskite oxides in the BiFeO 3 – Bi 2/3 TiO 3 – ATiO 3 (where A 2+ is divalent alkaline earth metal ions e.g., Ca 2+ , Sr 2+ , Ba 2+ ) ternary phase diagram that is polar as well as weak ferromagnetic above room temperature. The composition (Bi 0.9167 A 0.075 )(Fe 0.9 Ti 0.1 )O 3 crystallizes in the polar rhombohedral structure space group R3c as corroborated by powder X-ray and neutron diffraction analysis. The nearly pure A-site perovskite possesses a long-range magnetic ordering above room temperature. Finally, these perovskites show a low dielectric loss, and the electrical response is dominated by grain contributions below 723 K.
42 ENGINEERING↗
Cryogenic growth of aluminum: Structural morphology, optical properties, superconductivity, and microwave dielectric loss
We explore the molecular beam epitaxy synthesis of superconducting aluminum thin films grown on c-plane sapphire substrates at cryogenic temperatures of 6 K and compare their behavior with films synthesized at room temperature. We demonstrate that cryogenic growth increases structural disorder, producing crystalline grains that modify the optical, electrical, and superconducting properties of aluminum. We observe that cryogenic deposition changes the color of aluminum from fully reflective to yellow and correlate the pseudodielectric function and reflectance with structural changes in the film. We find that smaller grain sizes enhance the superconductivity of aluminum, increasing its critical temperature and critical field. We then estimate the superconducting gap and coherence length of Cooper pairs in aluminum in the presence of disorder. In conclusion, we fabricate superconducting microwave resonators on these films and find that, independently of the growth temperature, the system is dominated by two-level system loss with similar quality factors in the high- and low-power regimes. We further measure a higher kinetic inductance in the cryogenically grown films.
36 MATERIALS SCIENCE↗
Additive Manufacture of Low Loss Dielectric Optics
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Young, Nelson↗
Patterned Ferroelectric Films for Tunable Microwave Devices
Tunable microwave devices based on metal terminals connected by thin ferroelectric films can be made to perform better by patterning the films to include suitably dimensioned, positioned, and oriented constrictions. The patterns can be formed during fabrication by means of selective etching processes. If the width of the ferroelectric film in such a device is reduced at one or more locations, then both the microwave field and any applied DC bias (tuning) electric field become concentrated at those locations. The magnitudes of both the permittivity and the dielectric loss of a ferroelectric material are reduced by application of a DC field. Because the concentration of the DC field in the constriction(s) magnifies the permittivity- and loss-reducing effects of the applied DC voltage, the permittivity and dielectric loss in the constriction(s) are smaller in the constriction(s) than they are in the wider parts of the ferroelectric film. Furthermore, inasmuch as displacement current must flow through either the constriction(s) or the low-loss dielectric substrate, the net effect of the constriction(s) is equivalent to that of incorporating one or more low-loss, low-permittivity region(s) in series with the high-loss, high-permittivity regions. In a series circuit, the properties of the low-capacitance series element (in this case, the constriction) dominate the overall performance. Concomitantly, the capacitance between the metal terminals is reduced. By making the capacitance between the metal terminals small but tunable, a constriction increases the upper limit of the frequency range amenable to ferroelectric tuning. The present patterning concept is expected to be most advantageous for devices and circuits that must operate at frequencies from about 4 to about 60 GHz. A constriction can be designed such that the magnitude of the microwave electric field and the effective width of the region occupied by the microwave electric field become functions of the applied DC electric field, so that tunability is enhanced. It should even be possible to design the constriction to obtain a specific tuning-versus-voltage profile.
Miranda, Felix A.↗
In-plane and through-plane dielectric properties of graphene oxide membrane: Effect of Al 3 + modification
A graphene oxide (GO) membrane can be used in structural dielectric capacitors and planar micro-supercapacitors as a dielectric separator material due to its excellent through-plane and in-plane dielectric properties. The ability to tailor the dielectric properties of the GO membrane is crucial for dielectric applications. We believe this to be the first demonstration describing how Al 3+ ions impact the dielectric properties of the GO membrane through cation to oxygenated functional groups interactions. In this work, the Al 3+ -modification to the GO membrane was realized through a facile pre-coordination method followed by layer-by-layer assembling. The influence of Al 3+ on the GO membranes’ through-plane and in-plane dielectric properties (dielectric constant and dielectric loss) was investigated in the frequency range from 0.01 Hz to 10 5 Hz. Plane-to-plane and edge-to-edge Al 3+ coordination with the functional group on the basal plane or edge of the GO sheets was proposed to understand the metal ion's impact on the dielectric properties. The results demonstrated that the Al 3+ modification was an effective strategy to tailoring the GO membranes’ dielectric properties in a low frequency regime and further suggested the possibility of designing dielectric GO membranes with controllable dielectric performance. At a low frequency range (0.01–1 Hz), the addition of Al 3+ increased the through-plane dielectric constant and decreased the in-plane dielectric constant. In terms of dielectric loss, unmodified GO membranes exhibited a higher in-plane dielectric loss than the through-plane dielectric loss. Al 3+ -modified GO membranes exhibited increased through-plane dielectric loss and decreased in-plane dielectric loss compared to the unmodified GO membranes.
36 MATERIALS SCIENCE↗
Investigating Low Loss Substrates for Improved Qubit Coherence Times
Superconducting qubits are sensitive to dielectric losses from substrates, making the identification, optimization, and preparation of low-loss materials essential for enhancing qubit coherence times. In this work, we utilize Nb superconducting radio-frequency (SRF) cavities as a high-precision measurement tool to study the dielectric loss tangent of substrates with parts-per-billion sensitivity. This technique enables temperature- and field-resolved measurements, providing deep insights into the behavior of candidate materials such as sapphire and silicon. We explore the impact of substrate preparation techniques, examining how surface treatments and cleaning protocols influence dielectric loss. These studies highlight both the microscopic origins of loss in these substrates and the critical role of preparation methods, helping to identify key materials and processes that minimize dielectric loss, crucial for improving qubit performance.
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
Design and fabrication of ion traps for low RF power dissipation
Large surface-electrode ion traps with multiple trapping regions and junctions are a natural approach to scaling trapped ion quantum computers, supporting the connectivity and ion counts necessary for complex quantum algorithms. However, a major hurdle in this scaling is on-chip power dissipation from the applied RF voltage, which increases at a rate between linear and cubic relative to trap size, depending on whether the losses are dielectric or Ohmic. Here, we present two versions of a trap with features designed to reduce both types of RF power dissipation. The first variant contains a raised RF electrode that increases the electrode–ground distance to reduce capacitance. Different DC voltage sources are demonstrated on this trap to show that technical noise before the filter remains the dominant source of voltage noise and therefore motional heating. The second variant additionally includes a method for removing dielectric from beneath the RF electrode to further reduce dielectric losses. These traps were demonstrated at room temperature with 40 Ca + ions. In conclusion, the similar heating rates and heating rate axial frequency dependencies between 2.4 and 3.0 MHz illustrate that this dielectric modification is not detrimental to trap performance.
Sterk, J. D. [Sandia National Laboratories (SNL-NM↗
Impact of absorption due to zero-field splitting on loss in dielectrics: A case study in sapphire
The coherence times of superconducting qubits are limited by loss mechanisms, whose microscopic origins have remained elusive. We propose a mechanism caused by transitions between zero-field-split states of paramagnetic impurities or defects. We derive the absorption cross section for a magnetic dipole transition and apply it to calculate the bulk loss tangent. For Cr, Fe, and V impurities in sapphire, we find loss tangents at 4.5 GHz in the range of 10 −9 –10 −8 , comparable to the loss measured in experiments. This value suggests that magnetic loss may be a limiting factor in the coherence times of superconducting qubits.
36 MATERIALS SCIENCE↗
Probing phonon softening in ferroelectrics by scanning probe microwave spectroscopy
Microwave measurements have recently been successfully applied to measure ferroelectric materials on the nanoscale, including detection of polarization switching and ferroelectric domain walls. In this study we discuss the question of whether scanning probe microscopy operating at microwave frequency can identify the changes associated with the soft phonon dynamics in a ferroic. The analytical expressions for the electric potential, complex impedance, and dielectric losses are derived and analyzed, since these physical quantities are linked to experimentally measurable properties of the ferroic. As a ferroic we consider virtual or proper ferroelectric with an optic phonon mode that softens at a Curie point. We also consider a decay mechanism linked to the conductance of the ferroic, thus manifesting itself as the dielectric loss in the material. Our key finding is that the influence of the soft phonon dispersion on the surface potential distribution, complex impedance, and dielectric losses are evidently strong in the vicinity (~10–30 K) of the Curie temperature. Additionally, we quantified how the spatial distribution and frequency spectra of the complex impedance and the dielectric losses react on the dynamics of the soft phonons near the Curie point. These results set the stage for characterization of polar phase transitions with nanoscale microwave measurements, providing a complementary approach to well established electromechanical measurements for fundamental understanding of ferroelectric properties as well as their applications in telecommunication and computing.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Eliminating Surface Oxides of Superconducting Circuits with Noble Metal Encapsulation
The lifetime of superconducting qubits is limited by dielectric loss, and a major source of dielectric loss is the native oxide present at the surface of the superconducting metal. Specifically, tantalum-based superconducting qubits have been demonstrated with record lifetimes, but a major source of loss is the presence of two-level systems in the surface tantalum oxide. Here, we demonstrate a strategy for avoiding oxide formation by encapsulating the tantalum with noble metals that do not form native oxide. By depositing a few nanometers of Au or AuPd alloy before breaking vacuum, we completely suppress tantalum oxide formation. Microwave loss measurements of superconducting resonators reveal that the noble metal is proximitized, with a superconducting gap over 80% of the bare tantalum at thicknesses where the oxide is fully suppressed. Further, our findings suggest that losses in resonators fabricated by subtractive etching are dominated by oxides on the sidewalls, pointing to total surface encapsulation by additive fabrication as a promising strategy for eliminating surface oxide two-level system loss in superconducting qubits.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗