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Results for “effective model for InAs/GaAs heterostructures”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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4 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Modeling a Strain and Piezo Potentials in an InAs/GaAs Quantum Dot

We investigated the single-electron spectrum of an InAs/GaAs quantum dot (QD) using an effective potential model developed in previous studies. Our objective was to explore the limits of applicability of this model. We conducted numerical simulations, introducing a piezoelectric potential as a perturbation to the effective potential. The profile of this additional potential was derived from theoretical numerical studies presented in the literature. We analyzed the impact of variations in this profile within the framework of the perturbation theory. Our findings indicate that within a variation range of 25%, the effective potential model remains applicable.

42 ENGINEERING↗
DOE OSTI2021

Modeling electron transfer from the barrier in InAs/GaAs quantum dot-well structure

We study single electron tunnelling from the barrier in the binary InAs/GaAs quantum structure including quantum well (QW) and quantum dot (QD). The tunneling is described in the terms of localized/delocalized states and their spectral distribution. The modeling is performed by using the phenomenological effective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented. We focus on the effect of QD-QW geometry variations. The relation to the PL experiments is shown.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Quantum sensing effect of electron tunneling in DQD/analyte complex

We investigate electron tunneling between quantum dots and molecules to propose a quantum sensor. This sensor consists of double quantum dots (DQD) with energy levels specifically tailored to mirror those of the target analyte. By analyzing the spectral distribution of electron localizations in the DQD system, we can delineate the analyte’s spectrum and deduce its composition by comparing it with a reference sample. To understand electron tunneling dynamics within the DQD/analyte complex, we performed three-dimensional computational modeling applying the effective potential approach to the InAs/GaAs heterostructure. In this modeling, we mimicked the analyte spectrum by utilizing a quantum well characterized by a quasi-discrete spectrum. Our calculations reveal the inherent potential of utilizing this method as a highly sensitive and selective sensor.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Geometry-driven modeling of electron localization in InAs/GaAs double quantum dots

The coupled electronic states in two-dimensional (2D) and three-dimensional (3D) double quantum dot (DQD) systems are investigated using a phenomenological model applied to InAs/GaAs heterostructures. The single-band k • p effective potential approach previously proposed by our group is employed to numerically calculate the energy spectrum and spatial localization of a single electron, serving as an indicator of the coupling strength within the binary system. For identical quantum dots (QDs) in a DQD, the electronic states exhibit ideal coherence. We systematically vary the DQD geometry and the strength of the confinement potential (via an applied electric field) to examine the effects of symmetry breaking and the sensitivity of electron localization in both identical and nearly identical DQDs. Our results show that coherence in DQDs is highly sensitive to these subtle variations. This sensitivity can be harnessed to detect changes in the surrounding environment, such as fluctuations in chemical or electrical properties that affect the DQD system.

electron localization↗