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Results for “electron-beam lithography”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Fabrication of Tunnel Junctions For Direct Detector Arrays With Single-Electron Transistor Readout Using Electron-Beam Lithography

This paper will describe the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-millimeter wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper will describe how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions.

Stevenson, T. R.↗
NASA NTRS2001

Stitching-error reduction in gratings by shot-shifted electron-beam lithography

Calculations of the grating spatial-frequency spectrum and the filtering properties of multiple-pass electron-beam writing demonstrate a tradeoff between stitching-error suppression and minimum pitch separation. High-resolution measurements of optical-diffraction patterns show a 25-dB reduction in stitching-error side modes.

Integrated optics semiconductor lasersgratings↗
NASA NTRS1992

Slot antenna SIS mixers for submillimeter wavelengths

We are developing improved versions of a slot antenna SIS mixer which we have previously described. The initial work demonstrated a double sideband noise temperature of 420 K for a 500 GHz quasi-optical SIS mixer employing a twin-slot antenna on a quartz dielectric substrate. A quartz hyperhemispherical lens is used to focus the incoming radiation onto the twin-slot antenna. The advantages of a twin-slot antenna include a low impedance (35 omega) and a clean, symmetric beam pattern into the dielectric with a 70 percent efficiency. In our original mixer, the radiation was coupled from the two slot antennas onto superconducting microstrip lines which fed the SIS junction. By performing an impedance transformation using tapered lines and by feeding the radiation from the two slots to the junction in parallel, the effective (real) impedance seen by the junction was reduced to just 4 omega. This very low impedance allowed a junction area of 2.3 sq micron to be used at 500 GHz, which was manufactured using optical lithography. However, no attempt was made to tune out the junction capacitance. We estimate that this capacitance reduces the impedance coupling efficiency to eta(sub Z) approx. equals 0.23, for our junction with omega R(sub N) C = 5.3 at 500 GHz. The recent development of techniques using electron-beam lithography to manufacture junctions with very small areas (approx. equals 0.1 sq microns) now allows considerably more flexibility in the design of SIS mixer circuits. We have redesigned the slot-antenna mixer to take advantage of this possibility. In particular, we have included a novel circuit which allows the junction capacitance to be tune out over a broad bandwidth. For instance, mixers designed for 800 GHz using NbN/MgO/NbN junctions with realistic parameters achieve a 3 dB impedance bandwidth of nearly 400 GHz. Furthermore, our circuit uses only short lengths of microstrip and should be less sensitive to RF losses than other designs. The improved impedance match should give a large reduction in noise temperature as compared to our previous mixer. The new devices are currently under fabrication. Further details of the design and any available experimental results are discussed.

Zmuidzinas, Jonas↗
NASA NTRS2002

Diffractive optical elements on non-flat substrates using electron beam lithography

The present disclosure describes a technique for creating diffraction gratings on curved surfaces with electron beam lithography. The curved surface can act as an optical element to produce flat and aberration-free images in imaging spectrometers. In addition, the fabrication technique can modify the power structure of the grating orders so that there is more energy in the first order than for a typical grating. The inventors noticed that by using electron-beam lithography techniques, a variety of convex gratings that are well-suited to the requirements of imaging spectrometers can be manufactured.

Maker, Paul D.↗
NASA NTRS1975

Advances in superconducting quantum electronic microcircuit fabrication

Standard microelectronic fabrication techniques have been utilized to produce batch quantities of superconducting quantum electronic devices and circuits. The overall goal is a fabrication technology yielding circuits that are rugged and stable and capable of being fabricated controllably and reproducibly in sizeable quantities. Our progress toward this goal is presented, with primary emphasis on the most recent work, which includes the use of electron-beam lithography and techniques of hybrid microelectronics. Several prototype microcircuits have been successfully fabricated. These microcircuits are formed in a thin-film parent material consisting of layers of superconducting and normal metals, and use proximity-effect structures as the active circuit elements.

Kirschman, R. K.↗
NASA NTRS1983

Vibration-Isolation Bench for Testing in Vacuum

Precise optical systems tested without contamination. Vibration isolator is one of three such units supporting cast-iron table. Table used to test optical systems in vacuum. Isolator made from commercially available components. Scaled-down version finds wider application in electron optics or electron-beam lithography.

Dankowski, J. C.↗
NASA NTRS1983

GaAs microwave devices and circuits with submicron electron-beam defined features

This paper describes the fabrication and application of GaAs FET's, both as discrete microwave devices and as the key active components in monolithic microwave integrated circuits. The performance of these devices and circuits is discussed for frequencies ranging from 3 to 25 GHz. The crucial fabrication step is the formation of the submicron gate by electron-beam lithography.

Wisseman, W. R.↗
NASA NTRS1988

Dual-Cathode Electron-Beam Source

Beam from either cathode electromagnetically aligned with exit port. Electron beam from either of two cathodes deflected by magnetic and electric fields to central axis. Mechanical alignment of beam easy because cathode axes, anode apertures, and electron trajectories coplanar. Applications where uninterrupted service needed: scanning electron microscopes, transmission electron microscopes, electron-beam lithography equipment, Auger instruments, and microfocused x-ray sources.

Bradley, James G.↗
NASA NTRS1991

Growing Cobalt Silicide Columns In Silicon

Codeposition by molecular-beam epitaxy yields variety of structures. Proposed fabrication process produces three-dimensional nanometer-sized structures on silicon wafers. Enables control of dimensions of metal and semiconductor epitaxial layers in three dimensions instead of usual single dimension (perpendicular to the plane of the substrate). Process used to make arrays of highly efficient infrared sensors, high-speed transistors, and quantum wires. For fabrication of electronic devices, both shapes and locations of columns controlled. One possible technique for doing this electron-beam lithography, see "Making Submicron CoSi2 Structures on Silicon Substrates" (NPO-17736).

Fathauer, Obert W.↗
NASA NTRS1991

Submicron area NbN/MgO/NbN tunnel junctions for SIS mixer applications

The development of submicron area mixer elements for operation in the submillimeter wave range is discussed. High-current-density NbN/MgO/NbN tunnel junctions with areas down to 0.1 sq microns have been fabricated in both planar and edge geometries. The planar junctions were fabricated from in situ deposited trilayers using electron-beam lithography to pattern submicron area mesas. Modifications of fabrication techniques used in larger-area NbN tunnel junctions are required and are discussed. The NbN/MgO/NbN edge junction process using sapphire substrates has been transferred to technologically important quartz substrates using MgO buffer layers to minimize substrate interactions. The two junction geometries are compared and contrasted in the context of submillimeter wave mixer applications.

Leduc, H. G.↗
NASA NTRS2000

Sub-Micron Long HTS Ho Electron Mixers

The hot-electron bolometer mixer made from a high-T, superconductor (HTS) was introduced recently as an alternative to a Schottky mixer at THz frequencies. The performance of the mixer depends on the total thermal conductance for heat removal from the phonon sub-system due to either length-dependent phonon diffusion or phonon escape to the substrate. We have measured both the length and temperature dependencies of the IF bandwidth of the mixers fabricated from 25-35 mn thick YBCO films on MgO and sapphire substrates. The films were grown by a laser deposition technique and electron-beam lithography was used to define bridge lengths down to 50 nm. Mixer measurements were done using signal frequencies in the range of 1-100 GHz. For 50 nm and 400 nm long devices on MgO, the 3-dB bandwidth was about 100 MHz. At temperatures below 60 K, the hot-electron plateau was clearly seen starting around 2-3 GHz. At temperatures above 70 K, the flux-flow effects begin to dominate and the IF bandwidth increases to 1-8 GHz, while the conversion efficiency drops by several dB. This temperature dependence of the IF bandwidth can account for previously reported unexpectedly high bandwidth of HTS mixers.

Harnack, 0.↗
NASA NTRS1998

New Convex Grating Types for Concentric Imaging Spectrometers

The properties of convex gratings fabricated by electron-beam lithography are investigated. Three grating types are shown. These gratings allow the optical designer to fully realize the considerable advantages of concentric spectrometer forms.

spectrometers concentric imaging electron beam↗
NASA NTRS2003

Aligning Three Off-Axis Mirrors with Help of a DOE

A proposed method based on the use of a special-purpose diffractive optical element (DOE) would simplify (relative to prior methods) the alignment of three off-axis mirrors that constitute an imaging optical system. The method would exploit the fact that a DOE can be fabricated lithographically with high accuracy by electron-beam lithography in a thin film of poly(methyl methacrylate). The method would effectively transfer much of the problem of obtaining the needed accuracy from the mechanical-mirror-alignment domain to the lithographic domain. Unlike other methods that depend on specific symmetries (e.g., sphericity and/or concentricity), this method is expected to apply with equal ease and accuracy to mirrors of any configuration including aspherical, decentered mirrors. Assuming that one of the mirrors of a general three-mirror imaging optical system can serve as a reference for the alignment of the other two mirrors, such a system has 12 degrees of freedom in alignment. In the proposed method, one would use an interferometer in combination with a DOE to effect precise and relatively rapid and easy alignment of two of the mirrors with respect to each other, thus reducing the alignment task to that of the six degrees of freedom of the remaining mirror. The figure depicts a representative three-mirror off-axis imaging system, wherein the primary and tertiary mirrors (M1 and M3, respectively) are concave and the secondary mirror (M2) is convex. The DOE for aligning this system would be fabricated on the right surface of an optical flat and could be made to have either negative or positive focusing power, depending on the requirements of the specific application. The DOE could be designed to be placed at any convenient distance from M1 and M3 - again, depending on the application. The DOE would be illuminated with light coming from the left, generated by an interferometer. First, assuming the optical flat is of high quality, the plane of the DOE would be aligned perpendicular to the collimated beam by use of light reflected from the left face of the optical flat. The DOE would comprise two independent areas: one dedicated to M1, the other to M3. The portions of the collimated beam passing through those areas would be diffracted towards the corresponding mirrors. A mask, not shown in the figure, could be used to prevent light from passing through the rest of the area of the optical flat. Light rays reflected from M1 and M3 would retrace their paths through the DOE and would propagate leftward to the interferometer.

Mouroulis, Pantazis↗