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Transition metal dichalcogenides like molybdenum disulfide (MoS 2 ) are compelling for next-generation electronic devices. In this work, we investigate the impact of electronic stress on MoS 2 to illustrate that observational and phenomenological information on multiple devices can be useful to describe changes in the device, and caution against the rationalization of paltry results as representative or correlative to device behavior. Here, we stress MoS 2 by applying a sustained 20 V DC bias to study the material’s response. Post-stress electronic characterization revealed nonuniform shifts in current–voltage (I–V) behavior alongside microscale changes. Complementary mechanical, spectroscopic, and scanning microwave impedance measurements showed that stress-induced features locally modulate stiffness, surface potential, Raman intensity, and charge carrier density. We correlated I–V behavior with morphological features (wrinkles, tears, folds, height) and device-level geometry (MoS 2 overlap with electrodes, channel area, contact length) on 50 test structures across five chips to move beyond anecdotal conclusions. We found no universal correlations before DC stress. However, device-level geometry was correlated with I–V behavior after DC stress, suggesting that electrode contacts play a more dominant role than morphology in determining performance. Delamination and thinning induced by DC stress led to localized reductions in charge carrier density within the affected regions. Further, delamination and thinning appear to map to I–V device performance in a few samples, but the correlation is lost when a larger sample size is considered. This suggests significant sample-to-sample variability in surface electronic states of the test structures. We also discuss how environmental factors introduced during fabrication may contribute to the observed heterogeneous device response. Progress will require high-resolution, multimodal analysis across many samples constructed under controlled, clean conditions. By building data sets that capture variability, we can better identify the true drivers of performance.
Stress effects on electron relaxation time anisotropies in n-type Si, using high temperature piezoresistivity model for population transfer rates
Reliable test method based on special strain gauge load transducer for embedment axial stress measurement in electronic modules
Strain gage load transducer measures axial embedment stresses in resins used for encapsulation of welded electronic modules. It simulates the geometry of an actual electronic component and can be modified in size, shape, and operating temperature.
Fully kinetic simulations are used in this work to study strong shock waves in fully ionized plasmas for charge state 𝑍 ranging from 1 to 18. The ion stress tensor amplitude agrees well with classical predictions within the compression layer; however, its spatial structure is noticeably shaped by nonlocal transport effects. The electron stress tensor remains significantly smaller than that of the ions for all values of 𝑍 considered. Ion overheating in the compression layer is observed to scale approximately linearly with 𝑍. Both findings diverge from hydrodynamic models based on classical electron stress formulations. In conclusion, the electrons exhibit strong nonlocal behavior in the compression layer, with Knudsen numbers approaching unity for 𝑍 ≥ 6.
Data compiled by the Institute of Environmental Sciences were used to establish guidelines for identifying defective, abnormal, or marginal parts as well as manufacturing defects. These data are augmented with other available sources of similar information in conjunction with NASA centers' data and presented in a form that may be useful to all NASA centers in planning and developing effective environmental stress screens. Information relative to thermal and vibration screens as the most effective methods for surfacing latent failures in electronic equipment at the component level is considered.
A general discussion of the dominant terms in the stress tensor in a magnetized plasma such as the solar corona is presented. The importance of dissipative terms such as electrical resistivity, heat conduction, and interspecies collisions is assessed. For average coronal conditions, the proton stress tensor is found to reduce to the dominant terms in the classical expression for the viscous stress. The classical expression can fail in the transition region, however. In the diffusion region of reconnection, classical viscosity will be appropriate if the resistivity is very large, so that the diffusion region is broad, but in that case the viscous heating is small compared to the resistive heating. On the other hand, the more general expression for the stress tensor is required if the diffusion region is thin; the stress tensor will be important in this case. The electron stress tensor is also considered, and it is shown how the classical expression for electron viscosity can fail in the transition region and lower corona.
Synchrotron radiation rate from deexcitation of electrons in magnetic orbits of low quantum numbers, stressing electrons radiation in intense magnetic fields
Encapsulation technique minimizes embedment and thermal stresses in welded electronic modules. A coating of thinned room-temperature- vulcanizing silicone rubber having a high coefficient of expansion and flexibility at low temperature, is applied first and then an encapsulating epoxy resin having a relatively low coefficient of expansion is added.
Providing plasma fluid codes like NIMROD with continuum drift kinetic (CDK) physics that is quantitatively valid and computationally feasible throughout the spatial domain is difficult. Work at Utah State University (USU), in collaboration with the Center for Tokamak Transient Simulations (CTTS), focused on applying CDK closures in disruption-related calculations. Three examples where kinetic physics is paramount are (1) the electron stress tensor closure in Ohms law for accurately describing neoclassical tearing mode (NTM) evolution, (2) runaway electron (RE) density (nRE) and current (jRE) moments in NIMROD’s extended MHD model for self-consistent evolution of RE populations during disruptions and, (3) energetic ion effects on a myriad of MHD instabilities. While NTM simulations and continuum and PIC approaches to energetic ions in NIMROD have been a major goals of USU’s closure work for several years, the development of self-consistent CDK RE capability in NIMROD was started and extended considerably during the CTTS effort. Some goals of CDK RE in NIMROD are to explore the effects of the 2D relativistic phase space in 4D simulations and compare with NIMROD’s fluid RE model. Four publications and two PhD theses came out of the USU CTTS effort.
The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.
Uniaxial stress has proven to be a powerful experimental tuning parameter for effectively controlling lattice, charge, orbital, and spin degrees of freedom in quantum materials. In addition, its ability to manipulate the symmetry of materials has garnered significant attention. Recent technical progress to combine uniaxial stress cells with quantum oscillation and angle-resolved photoemission techniques allowed to study the electronic structure as function of uniaxial stress. This review provides an overview on experimental advancements in methods and examines studies on diverse quantum materials, encompassing the semimetal WTe 2 , the unconventional superconductor Sr 2 RuO 4 , Fe-based superconductors, and topological materials.
Uniaxial stress has proven to be a powerful experimental tuning parameter for effectively controlling lattice, charge, orbital, and spin degrees of freedom in quantum materials. In addition, its ability to manipulate the symmetry of materials has garnered significant attention. Recent technical progress to combine uniaxial stress cells with quantum oscillation and angle-resolved photoemission techniques allowed to study the electronic structure as function of uniaxial stress. This review provides an overview on experimental advancements in methods and examines studies on diverse quantum materials, encompassing the semimetal WTe2, the unconventional superconductor Sr2RuO4, Fe-based superconductors, and topological materials.
Electron paramagnetic resonance atomic scale stress analysis of high polymer fibers and rubber, measuring chain scission and bond rupture for different loading histories
The paper presents a three-dimensional mathematical model of signal generation and contrast in brittle materials and uses the model to simulate the effect of residual stress fields on the scanning electron acoustic microscopy (SEAM)-generated electron acoustic signal. According to the model, a positive (tensile) strain produces an increase in the output signal, whereas a negative (compressive) strain produces a decrease in the ouput signal. Dark field contrast conditions occur at a chopping frequency at which V2 - V1 is greater than 0 (where V2 = V is the SEAM output in a region of residual stresses, and V1 is the output in a stress-free region of the sample). Under ideal conditions (maximum contrast) V1 approaches zero. It was found that tensile strains of the order 0.2-0.3 percent, possible in brittle materials, would produce a variation of the acoustic output signal of the order 10 nV (about 1 percent), well within the image contrast and signal processing capability of the SEAM electronics.
Spin-lattice interaction in ruby measured by electron spin resonance in uniaxially stressed crystals