Search NASA⌕ Search

SEARCH · Search NASA

Results for “electronic stress”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Characterization of Electronic Stress-Induced Changes in Multilayer MoS 2

Transition metal dichalcogenides like molybdenum disulfide (MoS 2 ) are compelling for next-generation electronic devices. In this work, we investigate the impact of electronic stress on MoS 2 to illustrate that observational and phenomenological information on multiple devices can be useful to describe changes in the device, and caution against the rationalization of paltry results as representative or correlative to device behavior. Here, we stress MoS 2 by applying a sustained 20 V DC bias to study the material’s response. Post-stress electronic characterization revealed nonuniform shifts in current–voltage (I–V) behavior alongside microscale changes. Complementary mechanical, spectroscopic, and scanning microwave impedance measurements showed that stress-induced features locally modulate stiffness, surface potential, Raman intensity, and charge carrier density. We correlated I–V behavior with morphological features (wrinkles, tears, folds, height) and device-level geometry (MoS 2 overlap with electrodes, channel area, contact length) on 50 test structures across five chips to move beyond anecdotal conclusions. We found no universal correlations before DC stress. However, device-level geometry was correlated with I–V behavior after DC stress, suggesting that electrode contacts play a more dominant role than morphology in determining performance. Delamination and thinning induced by DC stress led to localized reductions in charge carrier density within the affected regions. Further, delamination and thinning appear to map to I–V device performance in a few samples, but the correlation is lost when a larger sample size is considered. This suggests significant sample-to-sample variability in surface electronic states of the test structures. We also discuss how environmental factors introduced during fabrication may contribute to the observed heterogeneous device response. Progress will require high-resolution, multimodal analysis across many samples constructed under controlled, clean conditions. By building data sets that capture variability, we can better identify the true drivers of performance.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Kinetic study of strong shock waves in fully ionized plasmas

Fully kinetic simulations are used in this work to study strong shock waves in fully ionized plasmas for charge state 𝑍 ranging from 1 to 18. The ion stress tensor amplitude agrees well with classical predictions within the compression layer; however, its spatial structure is noticeably shaped by nonlocal transport effects. The electron stress tensor remains significantly smaller than that of the ions for all values of 𝑍 considered. Ion overheating in the compression layer is observed to scale approximately linearly with 𝑍. Both findings diverge from hydrodynamic models based on classical electron stress formulations. In conclusion, the electrons exhibit strong nonlocal behavior in the compression layer, with Knudsen numbers approaching unity for 𝑍 ≥ 6.

Physics - Plasma physics↗
DOE OSTI2024

Final Report for Center for Tokamak Transient Simulations at USU

Providing plasma fluid codes like NIMROD with continuum drift kinetic (CDK) physics that is quantitatively valid and computationally feasible throughout the spatial domain is difficult. Work at Utah State University (USU), in collaboration with the Center for Tokamak Transient Simulations (CTTS), focused on applying CDK closures in disruption-related calculations. Three examples where kinetic physics is paramount are (1) the electron stress tensor closure in Ohms law for accurately describing neoclassical tearing mode (NTM) evolution, (2) runaway electron (RE) density (nRE) and current (jRE) moments in NIMROD’s extended MHD model for self-consistent evolution of RE populations during disruptions and, (3) energetic ion effects on a myriad of MHD instabilities. While NTM simulations and continuum and PIC approaches to energetic ions in NIMROD have been a major goals of USU’s closure work for several years, the development of self-consistent CDK RE capability in NIMROD was started and extended considerably during the CTTS effort. Some goals of CDK RE in NIMROD are to explore the effects of the 2D relativistic phase space in 4D simulations and compare with NIMROD’s fluid RE model. Four publications and two PhD theses came out of the USU CTTS effort.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Uniaxial stress effect on the electronic structure of quantum materials

Uniaxial stress has proven to be a powerful experimental tuning parameter for effectively controlling lattice, charge, orbital, and spin degrees of freedom in quantum materials. In addition, its ability to manipulate the symmetry of materials has garnered significant attention. Recent technical progress to combine uniaxial stress cells with quantum oscillation and angle-resolved photoemission techniques allowed to study the electronic structure as function of uniaxial stress. This review provides an overview on experimental advancements in methods and examines studies on diverse quantum materials, encompassing the semimetal WTe 2 , the unconventional superconductor Sr 2 RuO 4 , Fe-based superconductors, and topological materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Uniaxial stress effect on the electronic structure of quantum materials

Uniaxial stress has proven to be a powerful experimental tuning parameter for effectively controlling lattice, charge, orbital, and spin degrees of freedom in quantum materials. In addition, its ability to manipulate the symmetry of materials has garnered significant attention. Recent technical progress to combine uniaxial stress cells with quantum oscillation and angle-resolved photoemission techniques allowed to study the electronic structure as function of uniaxial stress. This review provides an overview on experimental advancements in methods and examines studies on diverse quantum materials, encompassing the semimetal WTe2, the unconventional superconductor Sr2RuO4, Fe-based superconductors, and topological materials.

FOS: Physical sciences↗
DOE OSTI2022

Combinatorial sputter deposition of ultrathick Au-Bi alloy films

We report gold-bismuth alloys are of interest as catalysts and catalytic sensing systems, electrochemical sensors, superconductors, and hohlraums for magnetically assisted inertial confinement fusion implosions. Radiation-hydrodynamics simulations with the Lasnex code of laser-driven hohlraums predict higher x-ray drive from Au-Bi alloys compared with cases of Au-Ta or pure Au and Bi hohlraums. Here, we use direct current magnetron sputtering in Ar gas, with co-sputtering from two elemental targets, to deposit Au-Bi alloys with Bi content of 9–77 at.% and thicknesses up to ~20 µm. Films are characterized by a combination of x-ray diffraction, Rutherford backscattering, scanning electron microscopy, substrate-curvature-based residual stress, and electronic transport measurements. Experiments are complemented by Monte Carlo simulations of ballistic sputtering and gas phase transport of depositing species and Ar gas atoms. Results show that all films are polycrystalline, with three distinct compositional regimes dominated by Au, Au 2 Bi, and Bi crystallographic phases. A metallic behavior of the temperature dependence of electrical resistivity is observed for all the films. Films with Bi content above ~30 at.% exhibit porosity, which is tolerable to hohlraum x-ray drive based on Lasnex simulations.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Impurity radiation seeding of neoclassical tearing mode growth

Abstract The physics of neoclassical tearing modes (NTMs) is of great concern to tokamak plasma stability and performance, especially in the burning plasma regime. Whereas in many situations the seed events can be clearly identified, such as sawteeth and edge localized modes, the potential seeding mechanism of NTMs due to the resistive tearing instability driven by the impurity radiation cooling still needs more study. Recent NIMROD simulations have demonstrated that local impurity radiation cooling can drive the seed island growth and trigger the subsequent onset of NTM instability. The seed island is mainly driven by the local helical perturbation of the diamagnetic current induced by the perturbed pressure gradient as a result of the impurity radiative cooling on the rational surface. A heuristic closure for the neoclassical viscosity is adopted, and the seed island is further driven by the perturbed bootstrap current induced from the neoclassical electron viscous stress in the extended Ohm’s law. The growth rate of the NTM in simulations is found proportional to the electron neoclassical viscosity, and a theoretical neoclassical driving term is adopted to account for the nonlinear neoclassical island growth in the simulations.

Zeng, Shiyong (ORCID:000000017098818X)↗
DOE OSTI2020

Cryogenic Stress-Driven Grain Growth Observed via Microcompression with in situ Electron Backscatter Diffraction

The deformation of materials at cryogenic temperature is of interest for space, arctic, and fundamental science applications. In this work, a custom-built cooling system attached to a commercial picoindenter was used for in situ cryogenic microcompression testing of equal-channel angular-pressed copper with real-time electron backscatter diffraction. Stress-driven grain growth at cryogenic temperatures was observed during a series of elastic and plastic deformations. Finally, these results provide direct evidence for the previously predicted phenomenon, whereas previous ex situ examinations demonstrated coarsening after cryogenic loading when samples were not maintained at cryogenic temperatures between deformation and characterization.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors

Thermal annealing is a widely used strategy to enhance semiconductor device performance. However, the process is complex for multi-material multi-layered semiconductor devices, where thermoelastic stresses from lattice constant and thermal expansion coefficient mismatch may create more defects than those annealed. We propose an alternate low temperature annealing technique, which utilizes the electron wind force (EWF) induced by small duty cycle high density pulsed current. To demonstrate its effectiveness, we intentionally degrade AlGaN/GaN high electron mobility transistors (HEMTs) with accelerated OFF-state stressing to increase ON-resistance ∼182.08% and reduce drain saturation current ∼85.82% of pristine condition at a gate voltage of 0 V. We then performed the EWF annealing to recover the corresponding values back to ∼122.21% and ∼93.10%, respectively. The peak transconductance, degraded to ∼76.58% of pristine at the drain voltage of 3 V, was also recovered back to ∼92.38%. This recovery of previously degraded transport properties is attributed to approximately 80% recovery of carrier mobility, which occurs during EWF annealing. We performed synchrotron differential aperture x-ray microscopy measurements to correlate these annealing effects with the lattice structural changes. We found a reduction of lattice plane spacing of (001) planes and stress within the GaN layer under the gate region after EWF annealing, suggesting a corresponding decrease in defect density. Application of this low-temperature annealing technique for in-operando recovery of degraded electronic devices is discussed.

Physics↗
DOE OSTI2022

Probing the Atomic Scale Mechanisms of Time Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs (June 2022)

Here we report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO2 MOSFETs using two powerful analytical techniques: electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). We find the dominant EDMR-sensitive traps generated throughout the majority of the TDDB process to be silicon dangling bonds at the (100) Si/SiO2 interface (Pb0 and Pb1 centers) for both the spin-dependent recombination (SDR) and trap-assisted tunneling (SDTAT) processes. We find this generation to be linked to both changes in the calculated interface state densities as well as changes in the NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation of traps known as E’ centers in EDMR measurements at lower experimental temperatures via SDR measurements at the interface. Our work strongly suggests the involvement of a rate-limiting step in the tunneling process between the silicon dangling bonds generated at the interface and the ones generated throughout the oxide.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Role of mechanical stress localizations on the radiation hardness of AlGaN/GaN high electron mobility transistors

Multi-material, multi-layered systems such as AlGaN/GaN high electron mobility transistors (HEMTs) contain residual mechanical stresses that arise from sharp contrasts in device geometry and materials parameters. These stresses, which can be either tensile or compressive, are difficult to detect and eliminate because of their highly localized nature. We propose that their high-stored internal energy makes potential sites for defect nucleation sites under radiation, particularly if their locations coincide with the electrically sensitive regions of a transistor. In this study, we validate this hypothesis with molecular dynamic simulation and experiments exposing both pristine and annealed HEMTS to 2.8 MeV Au +3 irradiation. Our unique annealing process uses mechanical momentum of electrons, also known as the electron wind force (EWF) to mitigate the residual stress at room temperature. High-resolution transmission electron microscopy and cathodoluminescence spectra reveal the reduction of point defects and dislocations near the two-dimensional electron gas region of EWF-treated devices compared to pristine devices. The EWF-treated HEMTs showed relatively higher resilience with approximately 10% less degradation of drain saturation current and ON-resistance and 5% less degradation of peak transconductance. Both mobility and carrier concentration of the EWF-treated devices were less impacted compared to the pristine devices. Our results suggest that the lower density of nanoscale stress localization contributed to the improved radiation tolerance of the EWF-treated devices. Intriguingly, the EWF is found to modulate the defect distribution by moving the defects to electrically less sensitive regions in the form of dislocation networks, which act as sinks for the radiation induced defects and this assisted faster dynamic annealing.

AlGaN/GaN HEMTs↗
DOE OSTI2021

Laboratory Verification of Electron-Scale Reconnection Regions Modulated by a Three-Dimensional Instability

We report that during magnetic reconnection in collisionless space plasma, the electron fluid decouples from the magnetic field within narrow current layers, and theoretical models for this process can be distinguished in terms of their predicted current layer widths. From theory, the off-diagonal stress in the electron pressure tensor is related to the thermal noncircular orbit motion of electrons around the magnetic field lines. This stress becomes significant when the width of the reconnecting current layer approaches the small characteristic length scale of the electron motion. To aid in situ spacecraft and numerical investigations of reconnection, the structure of the electron diffusion region is here investigated using the Terrestrial Reconnection Experiment. In agreement with the closely matched kinetic simulations, laboratory observations reveal the presence of electron-scale current layer widths. Although the layers are modulated by a current-driven instability, three-dimensional simulations demonstrate that it is the off-diagonal stress that is responsible for breaking the frozen-in condition of the electron fluid.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Sputter-deposited low-stress boron carbide films

Significant challenges have been faced in the manufacturing of low-stress B 4 C films. Here, we demonstrate a set of process parameters for direct-current magnetron sputter deposition of smooth, high-purity, amorphous B 4 C films with near-zero total residual stress and with thicknesses up to 10 μm. Films are characterized by a combination of high-energy ion scattering, x-ray diffraction, electron microscopy, and stress measurements based on substrate curvature. In order to facilitate the process transfer to other sputtering geometries, the favorable deposition conditions are correlated with distributions of landing energies and incident angles of depositing species estimated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. Based on such simulations, a decrease in compressive stress with increasing Ar working gas pressure is attributed to the corresponding broadening of the angular distribution of depositing species and associated atomic shadowing effects.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Determining Stress in Metallic Conducting Layers of Microelectronics Devices Using High Resolution Electron Backscatter Diffraction and Finite Element Analysis

Delayed failure due to stress voiding is a concern with some aging microelectronics, as these voids can grow large enough to cause an open circuit. Local measurements of stress in the metallic layers are crucial to understanding and predicting this failure, but such measurements are complicated by the fact that exposing the aluminum conducting lines will relieve most of their stress. In this study, we instead mechanically thin the device substrate and measure distortions on the thinned surface using high resolution electron backscatter diffraction (HREBSD). These measurements are then related to the stresses in the metallic layers through elastic simulations. This study found that in legacy components that had no obvious voids, the stresses were comparable to the theoretical stresses at the time of manufacture (≈300 MPa). Distortion fields in the substrate were also determined around known voids, which may be directly compared to stress voiding models. In conclusion, the technique presented here for stress determination, HREBSD coupled with finite element analysis to infer subsurface stresses, is a valuable tool for assessing failure in layered microelectronics devices.

HREBSD↗
DOE OSTI2024

Under the microscope: Reduced activation ferritic martensitic steel Eurofer-97 following ion-Irradiation and high-temperature high-pressure water exposure

Here, this study is designed to characterise the microstructural behaviour of Eurofer-97 steel under ion irradiation and subsequent exposure to high-temperature high-pressure (HTHP) water. Eurofer-97, a ferritic-martensitic steel, has been developed to withstand the conditions of fusion reactors in the locations in contact with coolant with an elevated level of neutron flux, such as the breeder-wall blanket. The material has been studied after self-ion irradiation (using Fe ions) simulating the microstructural effects of neutron irradiation limited to the subsurface layer. The corrosion properties of the Eurofer-97 steel were studied by exposure to HTHP water up to 331 °C. Advanced microstructural characterisation using scanning, transmission electron and focused ion beam microscopy was performed on the as-received microstructure and after ion irradiation. This was then characterised after exposure for 240 h in high-temperature water. Eurofer-97 had a dense, columnar Cr-rich inner oxide, followed by a Fe-rich outer oxide layer. In the irradiated condition the grain structure and oxide itself was less ordered. No appreciable difference in oxide thickness was identified between the irradiated and unirradiated specimens after this short exposure time.

36 MATERIALS SCIENCE↗