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Compact, Pull-in-Free Electrostatic MEMS Actuated Tunable Ring Resonator for Optical Multiplexing.
Abstract not provided.
Compact, Pull-in-Free Electrostatic MEMS Actuated Tunable Ring Resonator for Optical Multiplexing.
Abstract not provided.
Position sensing circuit for an electrostatically driven MEMS device
The present disclosure relates to a system for detecting movement of a microelectromechanical system (MEMS) device. The system uses a drive voltage signal source for generating a low frequency drive voltage signal for driving the MEMS device. An excitation signal source may be used for generating an excitation signal which is also applied to the MEMS device. The excitation signal has a frequency which is above a physical response capability of the MEMS device, such that operation of the MEMS device is not significantly affected by the excitation signal. A sensing impedance is used to help generate a signal which is responsive to the capacitance of the MEMS device. The capacitance of the MEMS device changes in response to movement of the MEMS device. An output subsystem is provided which responds to changes sensed by the sensing impedance, and which produces an output voltage signal. A filter filters the output voltage signal to produce a filtered output voltage signal. The filtered output voltage signal is indicative of a position of the MEMS device.
A sensing material-free and simple readout MEMS sensor for detecting Helium
Abstract In this work, we report a method that enables a standard electrostatic MEMS device to perform complex sensing functionalities, such as detecting the presence of helium without a sensing material or a conditioning circuit. Helium is a noble, odorless, non-reactive gas that is very challenging to detect. It is used in critical applications such as storing nuclear fuel waste inside a dry cask. In these applications, its leakage from the dry cask may indicate the cask's safe operation's degradation. A departure from the common practice of exciting the MEMS around its mechanical resonance, the method is based on exciting the MEMS around its electrical resonance circuit. This method shows that the tiny difference between the air dielectric constant (1.00059) and helium (1.000067) corresponding to only a few Femtofarad level capacitances produces a 25 mV difference without a conditioning circuit. Simulation results confirmed those findings and explored the sensor response at different operation conditions. This method eliminates the need for a heated microstructure and the need for absorption material. This method is not limited to gas sensing. It can be applied to other sensing mechanisms, such as acceleration and pressure measurements, and eliminate the complex circuit to read small capacitance in these applications.
A Threshold Helium Leakage Detection Switch with Ultra Low Power Operation
Detecting helium leakage is important in many applications, such as in dry cask nuclear waste storage systems. This work develops a helium detection system based on the relative permittivity (dielectric constant) difference between air and helium. This difference changes the status of an electrostatic microelectromechanical system (MEMS) switch. The switch is a capacitive-based device and requires a very negligible amount of power. Exciting the switch’s electrical resonance enhances the MEMS switch sensitivity to detect low helium concentration. This work simulates two different MEMS switch configurations: a cantilever-based MEMS modeled as a single-degree-freedom model and a clamped-clamped beam MEMS molded using the COMSOL Multiphysics finite-element software. While both configurations demonstrate the switch’s simple operation concept, the clamped-clamped beam was selected for detailed parametric characterization due to its comprehensive modeling approach. The beam detects at least 5% helium concentration levels when excited at 3.8 MHz, near electrical resonance. The switch performance decreases at lower excitation frequencies or increases the circuit resistance. The MEMS sensor detection level was relatively immune to beam thickness and parasitic capacitance changes. However, higher parasitic capacitance increases the switch’s susceptibility to errors, fluctuations, and uncertainties.
Comparative investigations of multi-fidelity modeling on performance of electrostatically-actuated cracked micro-beams
Silicon is a commonly used material for the fabrication of beams for use in micro-electrical-mechanical systems (MEMS). Although silicon is a brittle material, it has been shown to accumulate fatigue damage at the micro-scale. Understanding the effect this has on the overall device performance is critical to the design of reliable devices. Analytical methods for modeling damage provide expedient results but are limited by broad modeling assumptions. Numerical models account for more detailed physical phenomena but can be computationally intensive. In this work, two different crack scenarios are modeled using both analytical techniques and 3D computational simulations. First, the effects of a single surface crack on the static deflection and natural frequency of an electrostatically actuated micro-beam are formulated and compared. Then, a new method for approximating damage associated with realistic distributed crack networks is formulated for use in an analytical model and numerical simulations. A method for utilizing experimentally derived crack statistics to inform the analytical and numerical distributed crack models is developed. Good agreement between the analytical and numerical models is obtained for both crack scenarios. Altogether, these models can be used to effectively simulate a variety of damage and fatigue behaviors in silicon-based MEMS devices.