An Aromatic Cluster in the Active Site of epi-Isozizaene Synthase Is an Electrostatic Toggle for Divergent Terpene Cyclization Pathways
Explore the source record for details and available documents.
99 GENERAL AND MISCELLANEOUS↗
SEARCH · Search NASA
Results for “epi”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Design of the Electromagnetic Particle Injector (EPI) for Tokamak Deployment
Both predicting and controlling disruptions are critical and urgent issues for ITER as some disruptions with a short warning time may be unavoidable. For these cases, a rapid response disruption mitigation system (DMS) referred to as the electromagnetic particle injector (EPI) is being developed. The primary advantages of the EPI are its fast response time and high velocity, which have been demonstrated in offline experiments (Raman et al., 2021). The EPI is capable of accelerating a metallic sabot electromagnetically using a rail gun to the required velocities ( > 2 km/s) within 2 ms. Two high-field racetrack magnets able to generate fields over 2 T are positioned above and below the rails to permit high velocity at low rail currents, a requirement to minimize electrode erosion. At the end of the acceleration phase, a sabot capture mechanism retains the spent sabot inside the vacuum chamber that houses the EPI. At this point, it releases well-defined microspheres, or a shell pellet, of a radiative payload into the disrupting plasma. A remotely operated sabot loading system positioned behind the injector contains several pre-equipped sabots that can be loaded by an operator from the tokamak control room. The injector is interfaced to the tokamak through a guide tube attached to the front of the EPI vacuum chamber. Finally, the advantages of the EPI system over other DMSs under consideration are described in conjunction with the details of an EPI system designed for near-term test on an existing large tokamak.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Charge Collection in Simple EPI Diodes
Charge collection from ion tracks in epi diodes is investigated by computer simulations. As previously noted by others, collected charge can exceed charge liberated in the epi layer. Several cases are compared to illustrate the effect of changing ion LET, epi doping density, and doping types. It is found that the n(sup +)-p-p(sup +) diode displays a funneling regime and a diffusion regime (as previously noted by others),, but the p(sup +)-n-n(sup +) diode does not. Simple models are proposed for quantitative estimates of collected charge. A qualitative two-state picture of funneling is discussed.
epi diodes↗
Energetic Particles Investigation (EPI)
The EPI instrument operates during the pre-entry phase of the Galileo Probe. The main objective is the study of the energetic particle population in the inner Jovian magnetosphere and in the upper atmosphere. This will be achieved through omnidirectional measurements of electrons, protons, alpha-particles and heavy ions (Z greater than 2) and recording intensity profiles with a spatial resolution of about 0.02 Jupiter radii. Sectored data will also be obtained for electrons, protons, and alpha-particles to determine directional anisotropies and particle pitch angle distributions. The detector assembly is a two-element telescope using totally depleted circular silicon surface-barrier detectors surrounded by cylindrical tungsten shielding. The lower energy threshold of the particle species investigated during the Probe's pre-entry phase is determined by the material thickness of the Probe's rear heat shield which is required for heat protection of the scientific payload during entry into the Jovian atmosphere. The EPI instrument is combined with the Lightning and Radio Emission Detector and both instruments share one interface of the Probe's power, command, and data unit.
Fischer, H. M.↗
High-efficiency single-junction p-i-n GaAs solar cell on roll-to-roll epi-ready flexible metal foils for low-cost photovoltaics
We demonstrate the fabrication and characterization of high-efficiency, single-junction p-i-n GaAs solar cells, on flexible metal foil with epi-ready buffer via roll-to-roll fabrication. Single-junction p-i-n GaAs solar cells were fabricated using metal–organic chemical vapor deposition (MOCVD). Furthermore, an efficiency greater than 13% was obtained at 1 sun, which is the highest reported efficiency on GaAs photovoltaics directly deposited on metal tapes. This exceeds our previously reported study showcasing 11.5% efficiency on single-junction p-n solar cell structure. Improved morphology of p-i-n structure compared with p-n is explained by atomic force microscopy (AFM), scanning electron microscopy (SEM), and helium ion microscopy (HIM) measurements. Time-of-flight secondary ion mass spectrometry (TOF-SIMS) analysis showed reduced Zn diffusion in p-i-n cell compared with the p-n cell. We attribute the improvement in efficiency of p-i-n cells on flexible metal tapes to the quality of the junction, surface morphology, controlled diffusion of species within the active layers, and increase in absorption due to the optimized intrinsic layer thickness.
14 SOLAR ENERGY↗
Demonstration of non-destructive and isotope-sensitive material analysis using a short-pulsed laser-driven epi-thermal neutron source
Neutrons are a valuable tool for non-destructive material investigation as their interaction cross sections with matter are isotope sensitive and can be used complementary to x-rays. So far, most neutron applications have been limited to large-scale facilities such as nuclear research reactors, spallation sources, and accelerator-driven neutron sources. Here we show the design and optimization of a laser-driven neutron source in the epi-thermal and thermal energy range, which is used for non-invasive material analysis. Neutron resonance spectroscopy, neutron radiography, and neutron resonance imaging with moderated neutrons are demonstrated for investigating samples in terms of isotope composition and thickness. The experimental results encourage applications in non-destructive and isotope-sensitive material analysis and pave the way for compact laser-driven neutron sources with high application potential.
36 MATERIALS SCIENCE↗
epi_inference v. 1.0
SAND2021-0503 O The epi_inference software supports the prediction of disease transmission parameters from data. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.
Hart, William↗
Final Scientific/Technical Report: Low-cost, low-defect, 2" GaN epi-ready substrates processed with E-grinding.
Explore the source record for details and available documents.
36 MATERIALS SCIENCE↗
Reprogramming the Cyclization Cascade of epi -Isozizaene Synthase to Generate Alternative Terpene Products
Not provided.
Biochemistry & Molecular Biology↗
Structure-Based Engineering of a Sesquiterpene Cyclase to Generate an Alcohol Product: Conversion of epi -Isozizaene Synthase into α-Bisabolol Synthase
Not provided.
Biochemistry & Molecular Biology↗
Mutations in the proximal binding site and F-loop of AdeJ confer resistance to efflux pump inhibitors
Multidrug efflux is one of the major mechanisms of antibiotic resistance in gram-negative bacteria. Inhibitors of efflux pumps potentiate the activities of antibiotics, and their discovery could lead to new therapeutic options. The AdeIJK pump in Acinetobacter baumannii is a promising target for efflux pump inhibitors (EPIs) due to its high clinical importance and conservation, and several classes of EPIs targeting this and other A. baumannii efflux transporters have been recently reported. However, the mechanisms of action of these EPIs and their resistance liability remain underexplored. Here, we analyzed the impact of site-specific substitutions in the substrate/EPI translocation path of the inner membrane transporter AdeJ on efflux of substrate antibiotics and fluorescent probes and activities of substituted 4,6-diaminoquinoline EPIs. We found that substitutions in amino acid residues located in the entrance cleft (R701) and the flexible loop (E675) of AdeJ lead to resistance specifically against biphenyl-substituted EPIs, whereas the substitution of F178 in the distal binding pocket increased AdeJ sensitivity to certain naphthyl- and biphenyl-substituted EPIs. No major differences in docking scores and poses of substrates and EPIs were observed between the wild type and corresponding AdeJ variants for any of the mutations considered. This study concludes that substrates and EPIs bound along the translocation path of AdeJ participate in its conformational transitions and can either increase or decrease the rate of transport and therefore the efficiency of EPIs.
Acinetobacter↗
Catecholaminergic responses to stressful motion stimuli, scopolamine plus amphetamine, and dexamethasone
Peripheral levels of epinephrine (EPI) and neoepinephrine (NE) generally rise following stressful motion stimuli. Effective anti-motion sickness drugs, scopolamine plus, d-amphetamine (S/D) and dexamthasone (DEX) modulate release of EPI and NE. This modulation may be of etiological relevance. Methods: Severe nausea was induced by exposure to coriolis simulation using a rotating chair. Chronic administration of S/D (0.4 and 5 mg/da) DEX (3 mg/day) and placebo preceded coriolis simulation. EPI and NE were measured immediately before and after simulation. A double-blind crossover design was used. Results: Nausea-induced elevations of EPI (2.5 fold, p less than .01) and NE were not diminished upon repeated exposure and adaptation to the stressor. Subjects with more pronounced elevations of EPI following simulation displayed higher resistance to stressful motion (p less .05). Alteration of peripheral catechlomaine levels following drug suggested that motion sickness was not mediated by peripheral catechlolamine receptor simulation. EPI and NE levels were 2.8 and 3.6-fold higher (p less than .03 and .01) after nausea without DEX treatment. DEX loading halved pre-stress levels of EPI and NE (p less than .05). Conclusions: Marked differences were noted in individual responses to drug and systematic responses of EPI and NE. It is possible that the responses of EPI to motion sickness may predict resistance to stressful motion and represent a peripheral manifestation of some as yet unknown central event of etiologic relevance.
Kohl, R. L.↗
Atomically Flat Surfaces Developed for Improved Semiconductor Devices
New wide bandgap semiconductor materials are being developed to meet the diverse high temperature, -power, and -frequency demands of the aerospace industry. Two of the most promising emerging materials are silicon carbide (SiC) for high-temperature and high power applications and gallium nitride (GaN) for high-frequency and optical (blue-light-emitting diodes and lasers) applications. This past year Glenn scientists implemented a NASA-patented crystal growth process for producing arrays of device-size mesas whose tops are atomically flat (i.e., step-free). It is expected that these mesas can be used for fabricating SiC and GaN devices with major improvements in performance and lifetime. The promising new SiC and GaN devices are fabricated in thin-crystal films (known as epi films) that are grown on commercial single-crystal SiC wafers. At this time, no commercial GaN wafers exist. Crystal defects, known as screw defects and micropipes, that are present in the commercial SiC wafers propagate into the epi films and degrade the performance and lifetime of subsequently fabricated devices. The new technology isolates the screw defects in a small percentage of small device-size mesas on the surface of commercial SiC wafers. This enables atomically flat surfaces to be grown on the remaining defect-free mesas. We believe that the atomically flat mesas can also be used to grow GaN epi films with a much lower defect density than in the GaN epi films currently being grown. Much improved devices are expected from these improved low-defect epi films. Surface-sensitive SiC devices such as Schottky diodes and field effect transistors should benefit from atomically flat substrates. Also, we believe that the atomically flat SiC surface will be an ideal surface on which to fabricate nanoscale sensors and devices. The process for achieving atomically flat surfaces is illustrated. The surface steps present on the "as-received" commercial SiC wafer is also illustrated. because of the small tilt angle between the crystal "basal" plane and the polished wafer surface. These steps are used in normal SiC epi film growth in a process known as stepflow growth to produce material for device fabrication. In the new process, the first step is to etch an array of mesas on the SiC wafer top surface. Then, epi film growth is carried out in the step flow fashion until all steps have grown themselves out of existence on each defect-free mesa. If the size of the mesas is sufficiently small (about 0.1 by 0.1 mm), then only a small percentage of the mesas will contain an undesired screw defect. Mesas with screw defects supply steps during the growth process, allowing a rough surface with unwanted hillocks to form on the mesa. The improvement in SiC epi surface morphology achievable with the new technology is shown. An atomic force microscope image of a typical SiC commercial epilayer surface is also shown. A similar image of an SiC atomically flat epi surface grown in a Glenn laboratory is given. With the current screw defect density of commercial wafers (about 5000 defects/cm2), the yield of atomically free 0.1 by 0.l mm mesas is expected to be about 90 percent. This is large enough for many types of electronic and optical devices. The implementation of this new technology was recently published in Applied Physics Letters. This work was initially carried out in-house under a Director's Discretionary Fund project and is currently being further developed under the Information Technology Base Program.
Powell, J. Anthony↗
The Scaling of MCS, Non‐MCS, and Total Extreme Precipitation With Temperature Over the Central United States
Abstract While extreme precipitation is expected to increase in a warming climate, its scaling with temperature at weather timescales often produces puzzling results. Here, we focus on the summer months over the central U.S. to investigate the scaling of extreme precipitation intensity (EPI) with local temperature and determine the contribution of mesoscale convective systems (MCSs) to the EPI scaling. Using an observational data set that differentiates precipitation associated with MCS and non‐MCS storms, we find that MCS storms contribute to 70% of EPI samples at temperatures lower than 298 K where EPI increases with temperature. However, at temperatures of 298–305 K, MCSs' contribution to EPI decreases as the predominant storm type shifts from MCS to non‐MCS storms, causing EPI to decrease with temperature due to the weaker rainfall intensity associated with non‐MCS storms compared with MCS storms. Our findings underscore the important role of different storm types in affecting the EPI scaling relationships.
54 ENVIRONMENTAL SCIENCES↗
Performance of Convection-Permitting and Convection-Parameterized Models in Reproducing the Extreme Precipitation Intensity Relationship with Surface Conditions
Here, this study investigates the warm-season extreme precipitation–temperature scaling relationship in CONUS404, a convection-permitting (4 km) Weather Research and Forecasting (WRF) Model simulation over the conterminous United States for the past four decades, and compares it with the WRF-Thermodynamic Global Warming (WRF-TGW) historical simulation at a coarser resolution (12 km) using parameterized convection. We also analyze the NCEP stage IV and NASA Integrated Multi-satellitE Retrievals for the Global Precipitation Measurement (IMERG) datasets as observational benchmarks. We examine how extreme precipitation intensity (EPI) varies with temperature and saturation deficit over representative regions based on hourly data. The stage IV and IMERG data show a similar pattern of EPI variation with temperature and saturation deficit, except that the EPI peak is lower in IMERG than in stage IV. Under dry and hot conditions, EPI decreases too rapidly with elevated saturation deficit in both CONUS404 and WRF-TGW compared to observations, but the performance of CONUS404 is superior to WRF-TGW. When the near-surface atmosphere is saturated or close to saturated, both CONUS404 and WRF-TGW produce higher peak values of EPI relative to the observational references; IMERG exhibits scaling rates close to the Clausius–Clapeyron (C–C) relationship, while CONUS404, WRF-TGW, and stage IV all demonstrate super-C–C scaling behaviors. Despite marked warming over the past four decades, in both CONUS404 and WRF-TGW, the scaling relationship between EPI and temperature in a saturated atmosphere remains stable and robust. This indicates a strong potential for the EPI–temperature scaling rate under saturation to be used as an emergent constraint in reducing uncertainties of future extreme precipitation projection.
Atmosphere↗
Integrated Science Investigation of the Sun (ISIS): Design of the Energetic Particle Investigation
The Integrated Science Investigation of the Sun (ISIS) is a complete science investigation on the Solar Probe Plus (SPP) mission, which flies to within nine solar radii of the Sun's surface. ISIS comprises a two-instrument suite to measure energetic particles over a very broad energy range, as well as coordinated management, science operations, data processing, and scientific analysis. Together, ISIS observations allow us to explore the mechanisms of energetic particles dynamics, including their: (1) Origins-defining the seed populations and physical conditions necessary for energetic particle acceleration; (2) Acceleration-determining the roles of shocks, reconnection, waves, and turbulence in accelerating energetic particles; and (3) Transport-revealing how energetic particles propagate from the corona out into the heliosphere. The two ISIS Energetic Particle Instruments measure lower (EPI-Lo) and higher (EPI-Hi) energy particles. EPI-Lo measures ions and ion composition from approx. 20 keV/nucleon-15 MeV total energy and electrons from approx.25-1000 keV. EPI-Hi measures ions from approx. 1-200 MeV/nucleon and electrons from approx. 0.5-6 MeV. EPI-Lo comprises 80 tiny apertures with fields-of-view (FOVs) that sample over nearly a complete hemisphere, while EPI-Hi combines three telescopes that together provide five large-FOV apertures. ISIS observes continuously inside of 0.25 AU with a high data collection rate and burst data (EPI-Lo) coordinated with the rest of the SPP payload; outside of 0.25 AU, ISIS runs in low-rate science mode whenever feasible to capture as complete a record as possible of the solar energetic particle environment and provide calibration and continuity for measurements closer in to the Sun. The ISIS Science Operations Center plans and executes commanding, receives and analyzes all ISIS data, and coordinates science observations and analyses with the rest of the SPP science investigations. Together, ISIS' unique observations on SPP will enable the discovery, untangling, and understanding of the important physical processes that govern energetic particles in the innermost regions of our heliosphere, for the first time. This paper summarizes the ISIS investigation at the time of the SPP mission Preliminary Design Review in January 2014.
Coronal Mass Ejections↗
Ionospheric Storm Effects and Equatorial Plasma Irregularities During the 17-18 March 2015 Event
The intense magnetic storm on 17-18 March 2015 caused large disturbances of the ionosphere. Based on the plasma density (Ni) observations performed by the Swarm fleet of satellites, the Gravity Recovery and Climate Experiment mission, and the Communications/Navigation Outage Forecasting System satellite, we characterize the storm-related perturbations at low latitudes. All these satellites sampled the ionosphere in morning and evening time sectors where large modifications occurred. Modifications of plasma density are closely related to changes of the solar wind merging electric field (E (sub m)). We consider two mechanisms, prompt penetration electric field (PPEF) and disturbance dynamo electric field (DDEF), as the main cause for the Ni redistribution, but effects of meridional wind are also taken into account. At the start of the storm main phase, the PPEF is enhancing plasma density on the dayside and reducing it on the nightside. Later, DDEF takes over and causes the opposite reaction. Unexpectedly, there appears during the recovery phase a strong density enhancement in the morning/pre-noon sector and a severe Ni reduction in the afternoon/evening sector, and we suggest a combined effect of vertical plasma drift, and meridional wind is responsible for these ionospheric storm effects. Different from earlier studies about this storm, we also investigate the influence of storm dynamics on the initiation of equatorial plasma irregularities (EPIs). Shortly after the start of the storm main phase, EPIs appear in the post-sunset sector. As a response to a short-lived decline of E (sub m), EPI activity appears in the early morning sector. Following the second start of the main phase, EPIs are generated for a few hours in the late evening sector. However, for the rest of the storm main phase, no more EPIs are initiated for more than 12 hours. Only after the onset of recovery phase does EPI activity start again in the post-midnight sector, lasting more than 7 hours.This comprehensive view of ionospheric storm effects and plasma irregularities adds to our understanding of conditions that lead to ionospheric instabilities.
Zhou, Yun-Liang↗
Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
In this study, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room temperature or below zero °C. A sharp superconducting transition at T ∼ 1.3 K is observed in these epi-Al films. We further show that supercurrent states are realized in Josephson junctions fabricated in the epi-Al/antimonide heterostructures with mobility μ ∼ 1.0 × 10 6 cm 2 /Vs. These results clearly demonstrate we have achieved growing high-quality epi-Al/antimonide heterostructures, a promising platform for the exploration of Josephson junction effects for quantum information science and microelectronics applications.
Antimonide heterostructures↗