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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

An Integrated Gate Driver in 4H-SiC for Power Converter Applications

A gate driver fabricated in a 2-um 4H silicon carbide (SiC) process is presented. This process was optimized for vertical power MOSFET fabrication but accommodated integration of a few low-voltage device types including N-channel MOSFETs, resistors, and capacitors. The gate driver topology employed incorporates an input level translator, variable power connections, and separate power supply connectivity allowing selection of the output signal drive amplitude. The output stage utilizes a source follower pull-up device that is both overdriven and body source connected to improve rise time behavior. Full characterization of this design driving a SiC power MOSFET is presented including rise and fall times, propagation delays, and power consumption. All parameters were measured to elevated temperatures exceeding 300 C. Details of the custom test system hardware and software utilized for gate driver testing are also provided.

Ericson, Milton Nance↗
DOE OSTI2019

Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver

A novel implementation of an isolated gate driver for power switches is proposed in this study. The driver is bespoke designed for SiC power mosfet s. The proposal achieves the main driver characteristics—isolation capability, gate switching command, and power transfer to the secondary side by using a unique magnetic transformer. The resulting simple circuitry enables the integration of the driver into the power cell, achieving theoretical higher power density values of the final system. The principle of operation of the driver is described in detail. The original pulsewidth modulation signal is modulated with a pure ac square waveform under a two-level modulation scheme, that guarantees no saturation of the magnetic core. Here, the signal is then magnetically coupled to the secondary side, where it is rectified and reconstructed to effectively drive the target device. In addition, the steps needed to provide a suitable design taking into account the parameters of the target power switch are also detailed. The resulting driver is characterized and a prototype of the driver is built and tested. The main results of the driver performance on a SiC mosfet -based prototype are presented. Based on the analysis of these results, this study experimentally demonstrates the feasibility of the proposal.

25 ENERGY STORAGE↗
DOE OSTI2014

High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter s switching frequency was then increased to 500 kHz to prove the high frequency capability of the power module was then pushed to its limits and operated at a switching frequency of 500 kHz. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

Whitaker, Mr. Bret↗
DOE OSTI2014

High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

This paper presents a high-temperature capable intelligent power module that contains SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter (Fig. 1) to determine the performance of the module in a system level application. The converter was operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The peak efficiency was found to be 97.5% at 2.9 kW.

Whitaker, Mr. Bret↗
DOE OSTI2021

A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are discussed, all of them providing the required gate turn-on and turn-off command signal with galvanic isolation, but also supplying power to the secondary side of the driver by means of magnetic transformers. The resulting solutions, all of them implemented with simple circuitry, enable the integration of the driver into the power cell, allowing for theoretical higher power density values in the final system. The principle of operation of the different solutions is discussed, and then the main relevant implementation details are presented. After that, the operation of the circuits is demonstrated experimentally, by testing a set of prototypes of these drivers. This provides a comprehensive design example that assesses the feasibility of the proposed solutions. Finally, the main results of the performance of the three gate drivers, on an SiC MOSFET-based prototype are presented and compared.

42 ENGINEERING↗
DOE OSTI2014

A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

Limitations of silicon (Si) based power electronic devices can be overcome with Silicon Carbide (SiC) because of its remarkable material properties. SiC is a wide bandgap semiconductor material with larger bandgap, lower leakage currents, higher breakdown electric field, and higher thermal conductivity, which promotes higher switching frequencies for high power applications, higher temperature operation, and results in higher power density devices relative to Si [1]. The proposed work is focused on design of a SiC gate driver to drive a SiC power MOSFET, on a Cree SiC process, with rise/fall times (less than 100 ns) suitable for 500 kHz to 1 MHz switching frequency applications. A process optimized gate driver topology design which is significantly different from generic Si circuit design is proposed. The ultimate goal of the project is to integrate this gate driver into a Toyota Prius plug-in hybrid electric vehicle (PHEV) charger module. The application of this high frequency charger will result in lighter, smaller, cheaper, and a more efficient power electronics system.

Lamichhane, Ranjan↗
NASA NTRS2019

Performance Evaluation of High-Speed, Low-Side Gate Driver, FAN3122, over Extended Temperature Range

Emerging power metal-oxide semiconductor field-effect transistor (MOSFETs) based on silicon carbide and gallium nitride technology are finding widespread use in many electronic applications such as motor control and DC/DC converters due to their higher voltage, higher temperature tolerance, and higher frequency switching capabilities. To utilize these power devices and to meet circuit/system compactness, modularity, and operational functionality, gate drivers that provide unique attributes, such as fast switching and high-current handling capability, are needed. In addition, power systems geared for use in space mission applications require on-board devices to withstand exposure to extreme temperatures and wide thermal swings. Very little data, however, exist on the performance of such devices and circuits under extreme temperatures. In this work, the performance of a high-speed gate driver with potential use in controlling power-level transistors was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Semiconductors↗
DOE OSTI2021

A Single Passive Gate-Driver for Series Connected Power Devices in DC Circuit Breaker Applications

This letter proposes a novel single passive gate driver solution based on passive devices to control series-connected power semiconductor devices for dc circuit breaker (DCCB) applications. The transient suppression devices (e.g., metal oxide varistors) are utilized to achieve natural voltage balancing among the series devices, while providing the discharge path of the gate capacitor of the upper devices. Here, the proposed method is very simple, cost effective and more compact compared with conventional voltage balancing method-based DCCBs. Besides, gate voltage oscillation during the voltage recovery process is mitigated by the addition of an extra gate capacitor. Simulation and experimental results are provided to verify the effectiveness of proposed method.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities: Preprint

A wide range of utility applications require controllable switches with features such as high-voltage (HV) blocking and high-current carrying capacity especially at high pulse width modulation (PWM) frequency. Low and medium voltage utility applications such as motor drives and flexible AC transmission systems (FACTS) as well as solid state transformers (SST) could also benefit from a low-cost HV switching module. Wide band gap (WBG) semiconductors such as SiC and GaN MOSFETs are considered to be the present and next generation device choices, although they have their own limitations. For relatively HV applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low voltage regime. This manuscript proposes a new half bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in HV applications. Constructed from bare SiC dies, this half bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold and cooling, (3) integrated gate driver module with PWM over wi-fi to eliminate the need for low voltage signals, (4) wireless power transfer (WPT) enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state of health (SOH) estimator module onboard. The entire architecture has been designed and built at National Renewable Energy Laboratory (NREL), Golden, CO.

baseplate design↗
DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗
NASA NTRS2023

Extended Temperature Operation of Isolated, Precision Gate Driver, ADuM4120

Electronics used in space missions encounter exposure to extreme temperatures and operation under wide thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. Extending the temperature range at which electronic parts can operate reliably leads to potential benefits resulting in improving reliability, reducing mass/weight, and simplifying thermal design due to elimination of thermal control elements and fewer parts count. In this work, the performance of an isolated, precision gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Power Electronics↗
NASA NTRS2011

Operation of a New Half-Bridge Gate Driver for Enhancement - Mode GaN FETs, Type LM5113, Over a Wide Temperature Range

A new commercial-off-the-shelf (COTS) gate driver designed to drive both the high-side and the low-side enhancement-mode GaN FETs, National Semiconductor's type LM5113, was evaluated for operation at temperatures beyond its recommended specified limits of -40 C to +125 C. The effects of limited thermal cycling under the extended test temperature, which ranged from -194 C to +150 C, on the operation of this chip as well as restart capability at the extreme cryogenic and hot temperatures were also investigated. The driver circuit was able to maintain good operation throughout the entire test regime between -194 C and +150 C without undergoing any major changes in its outputs signals and characteristics. The limited thermal cycling performed on the device also had no effect on its performance, and the driver chip was able to successfully restart at each of the extreme temperatures of -194 C and +150 C. The plastic packaging of this device was also not affected by either the short extreme temperature exposure or the limited thermal cycling. These preliminary results indicate that this new commercial-off-the-shelf (COTS) halfbridge eGaN FET driver integrated circuit has the potential for use in space exploration missions under extreme temperature environments. Further testing is planned under long-term cycling to assess the reliability of these parts and to determine their suitability for extended use in the harsh environments of space.

Patterson, Richard↗
NASA NTRS2015

Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

Transistor Gate Drive↗
NASA NTRS2020

Performance Evaluation of Isolated Gate Driver, ADuM4121, Under Exposure to Extreme Temperature

Electronics designed for use in space missions are expected to be exposed to harsh environment including radiation and extreme temperature, to name a few. Severe thermal swings are also encountered depending on planetary exploration, orbital orientation, and mission duration. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. In this work, the performance of an isolated gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Boomer, Kristen↗