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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Poster outlining NETL's work surrounding distributed single-crystal harsh-environment optical fiber sensors within molten salt reactors. This work highlights the impact harsh environment sensors have on reactor automation for accelerating molten salt reactor designs.
Fibers composed of single crystal (SC) materials are mechanically, thermally, and chemically robust to harsh conditions, and thus attractive for sensing applications in harsh environments. However, SC fibers grown via the laser-heated pedestal growth (LHPG) technique do not intrinsically have a functional cladding layer. We investigate self-segregation of dopants in a crystal matrix within a SC fiber. Ti and Cr dopants within a sapphire matrix were grown via the LHPG method. Cross-sectional dopant concentrations were measured via electron-probe micro-analysis (EPMA). The cross-sectional constituent profiles and resulting transmissivities were characterized as a function of growth parameters.
For presentation at the UPISC Collaboration Workshop, Pittsburgh, PA, November 7-8, 2023.
This paper reports on the development of key components required for a self-powered oscillator unit designed to wirelessly transmit its signal under full insertion in high-temperature (HT) harsh-environments (HE), such as those present in power plants and industrial settings (metallurgic, oil extraction, molding, and aerospace). The oscillator employed a silicon carbide (SiC) power transistor and HT passive components on a screen-printed alumina circuit board capable of operation beyond 300 °C. The HT oscillator circuit was powered solely by in-situ energy scavenging thermoelectric generator (TEG) modules using passive cooling, eliminating the need for an external power supply or active cooling. In addition, a silicon-based external booster circuit was used to achieve the required TEG voltage regulation to test the TEG-powered HT oscillator circuit. The TEG-powered oscillator circuit was tested inside a non-metallic furnace from room temperature to over 300 °C for transmission of a wireless signal, which was detected outside the furnace at 11 ft (3.4 m). Such a wireless transmitting system powered only by in-situ TEGs, with no requirement for external power or active cooling, is very attractive for flexible, mobile stand-alone control and sensor units targeted for operation in HT HE conditions found in power plants and industrial settings.
The p-type transistor is an indispensable component of semiconductor technology, enabling a complementary operation with n-channel transistors for computation, storage, and communication. Achieving both high robustness and high efficiency is highly desirable but challenging for p-type transistors due to the limited semiconductors with reliable hole transport and their high activation energies. Here, in this study, we achieved a robust yet efficient p-type transistor by heterogeneously integrating an ultrawide-bandgap semiconductor and a high-κ dielectric layer through van der Waals integration. The p-type transistor employs a two-dimensional hole channel on hydrogenated diamond (bandgap 5.6 eV) combined with a high-κ (30.5) SrTiO 3 perovskite membrane. At room temperature, the transistor exhibits stable operation with a high on-current (∼200 mA/mm), low subthreshold swing (70 mV/dec), high hole mobility (566 cm 2 /(V·s) to 572 cm 2 /(V·s)), and high on–off ratio (∼10 9 ). Furthermore, tuning the annealing temperature allows operation in either enhancement or depletion mode. The robust p-type transistor with high efficiency holds great potential for future power electronics, ultraviolet (UV) optoelectronics, and harsh-environment electronic applications.
In order to test and monitor the operational stability and conditions of various energy, and manufacturing systems and their components, development of accurate sensors capable of operating at temperatures in excess of 1000 °C in various environments for long durations is required. In addition, many of these harsh-environment systems do not permit sensors to be directly inserted, so these sensors need to be embedded into thermal protective materials. In this work were developed high-temperature embedded thermocouples composed of various doped lanthanum chromites-refractory based composites synthesized by a mixed-oxide route and directly embedded into a Al2O3 based refractory. The electrical properties were specifically manipulated by altering the level of percolation of the conductive phase within the refractory constituent. Chemical stability of sensors was determined by phase development analysis by X-ray diffraction and X-ray photoelectron spectroscopy; Seebeck coefficients were determined by thermoelectric voltages measurements at temperature up to 1400 oC.