Thin film CdS-CdTe heterojunction diodes.
CdTe layer formation at CdS-Te interface during fabrication of thin film, Au-CdS-Te heterojunction diodes by vapor deposition
Dutton, R. W.↗
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Low-threshold high-T/0/ constricted double heterojunction AlGaAs diode lasers
Constricted double heterojunction diode lasers of relatively low CW thresholds (28-40 mA) are obtained by growing structures that maximize the amount of current flow into the lasing spot. These values are obtained while still using standard 10 microns wide oxide-defined stripe contacts. Over the 20-70 C temperature interval, threshold current temperature coefficients as high as 320 C and a virtually constant external differential quantum efficiency, are found.
Botez, D.↗
Reliability of constricted double-heterojunction AlGaAs diode lasers
Constricted double-heterojunction diode lasers have been life tested at 70 C heatsink temperature and 3-4 mW/facet in CW operation. A median life of 7800 h is obtained at 70 C, which extrapolates to 400,000 h median life at room temperature. The extrapolated mean time to failure at room temperature is in excess of 1,000,000 h. Single-longitudinal-mode CW operation is maintained after 10,000 h of accelerated aging at 70 C.
Botez, D.↗
Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes
Double-heterojunction A2(0.3)Ga(0.7)As/Al(0.08)Ga(0.92)As lasers (oxide-striped and Al2O3 facet coated) were subjected to step-temperature aging from 60 to 100 C. The change in threshold current and spontaneous output was monitored at 22 C. The average time required for a 20% pulsed threshold current increase ranges from about 500 h, when operating at 100 C, to about 5000 h at a 70 C ambience. At 22 C, the extrapolated time is about 1 million h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting activation energies are approximately 0.95 eV for laser degradation and approximately 1.1 eV for the spontaneous output decrease
Kressel, H.↗
High-temperature CW and pulsed operation in constricted double-heterojunction AlGaAs diode lasers
The behavior of constricted double-heterojunction (CDH) diode lasers has been investigated up to 170 C CW and 270 C pulsed. It is found that the temperature-dependent current concentration effect responsible for low threshold-current sensitivity and temperature-invariant external differential quantum efficiency in CDH lasers saturates at about 100 C. It is also found that over a wide temperature interval (180-280 C) the threshold current density has a To value of 40-50 C and that the spontaneous emission becomes increasingly sublinear above 220 C. Both effects are believed to reflect Auger recombination.
Botez, D.↗
Studies of single-mode injection lasers and of quaternary materials. Volume 1: Single-mode constricted double-heterojunction AlGaAs diode lasers
Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various types of CDH structures are considered under three general topics: liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers have positive-index lateral-mode confinement and provide: single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C; light-current characteristics with second-harmonic distortion as low as -57 dB below the fundamental level; threshold-current temperature coefficients, as high as 375 C (pulsed) and 310 C (CW); constant external differential quantum efficiency to 100 C; and lasing operation to 170 C CW and 280 C pulsed. Semileakyguide CDH lasers have an asymmetric leaky cavity for lateral-mode confinement and provide single-mode operation to 15 to 20 mW/facet CW and to 50 mW/facet at 50% duty cycle. Modulation characteristics and preliminary reliability data are discussed.
Botez, D.↗
Constricted double-heterojunction AlGaAs diode lasers - Structures and electrooptical characteristics
Constricted double-heterojunction (CDH) diode lasers are presented as a class of nonplanar-substrate devices for which the lasing cavity is on the least resistive electrical path between the contact and the substrate. Various CDH structures are discussed while treating such topics as liquid-phase epitaxy over channeled substrates, lateral mode control, and current control in nonplanar-substrate devices. Ridge-guide CDH lasers with positive-index lateral mode confinement provides single-mode CW operation to 7 mW/facet at room temperature and to 3 mW/facet at 150 C, while exhibiting light-current characteristics with second-harmonic distortions as low as -57 dB below the fundamental level. Semileaky guide CDH lasers with an asymmetric leaky cavity provide single-mode operation to 15-20 mW/facet CW, and to 50 mW/facet at 50% duty cycle.
Botez, D.↗
Design curves for double-heterojunction laser diodes
This paper reviews theoretical double-heterojunction laser design curves relating the structure with the transverse mode order able to propagate, the degree of radiation confinement to the active region, the maximum field intensity within the device, and the radiated beam shape. The curves presented are general and applicable to any double-heterojunction structure where the spacing of the heterojunctions and the refractive index in the relevant regions are known.
Butler, J. K.↗
New PbSnTe heterojunction laser diode structures with improved performance
Several recent advances in the state-of-the-art of lead tin telluride double heterojunction laser diodes are summarized. Continuous Wave operation to 120 K and pulsed operation to 166 K with single, lowest order transverse mode emission to in excess of four times threshold at 80 K were achieved in buried stripe lasers fabricated by liquid phase epitaxy in the lattice-matched system, lead-tin telluride-lead telluride selenide. At the same time, liquid phase epitaxy was used to produce PbSnTe distributed feedback lasers with much broader continuous single mode tuning ranges than are available from Fabry-Perot lasers. The physics and philosophy behind these advances is as important as the structures and performance of the specific devices embodying the advances, particularly since structures are continually being evolved and the performance continues to be improved.
Fonstad, C. G.↗
Red-light-emitting Al/x/Ga/1-x/As heterojunction laser diodes.
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Kressel, H.↗
Internal optical losses in very thin CW heterojunction laser diodes
Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.
Butler, J. K.↗
The ideality factor and the high-frequency noise of Schottky-barrier-type diodes.
Consideration of the effect of the ideality factor on the high-frequency noise emission from diodes. Noise measurements on Schottky barriers and n-n heterojunction diodes are presented as verification of the theory over a range of ideality factors. The requirements for low-noise diodes are outlined.
Neudeck, G. W.↗
Interfacial recombination at /AlGa/As/GaAs heterojunction structures
Experiments were conducted to determine the interfacial recombination velocity at Al0.25Ga0.75As/GaAs and Al0.5Ga0.5As/GaAs heterojunctions. The recombination velocity was derived from a study of the injected minority-carrier lifetime as a function of the junction spacing. It is found that for heterojunction spacings in excess of about 1 micron, the interfacial recombination can be characterized by a surface recombination velocity of 4,000 and 8,000 cm/sec for the two types of heterojunctions, respectively. For double-heterojunction spacings below 1 micron, the constancy of the minority-carrier lifetime suggests that the interfacial recombination velocity decreases effectively. This effect is technologically very important since it makes it possible to construct very low-threshold injection lasers. No such effect is observed in single-heterojunction diodes.
Ettenberg, M.↗
Efficient photovoltaic heterojunctions of indium tin oxides on silicon
Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60
Dubow, J. B.↗
Very low threshold-current temperature sensitivity in constricted double-heterojunction AlGaAs lasers
The temperature dependence of threshold currents in constricted double-heterojunction diode lasers with strong lateral mode confinement is found to be significantly milder than for other types of lasers. The threshold-current relative variations with ambient temperature are typically two to three times less than for other devices of CW-operation capability. Over the interval 10-70 C the threshold currents fit the empirical exponential law exp/(T2-T1)/T0/ with T0 values in the 240-375 C range in pulsed operation, and in the 200-310 C range in CW operation. The external differential quantum efficiency and the mode far-field pattern near threshold are virtually invariant with temperature. The possible causes of high-T0 behavior are analyzed, and a new phenomenon - temperature-dependent current focusing - is presented to explain the results.
Botez, D.↗
Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon
GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.
Lin, T. L.↗
Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component
A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.
Barron, Andrew R.↗
Single-Band and Dual-Band Infrared Detectors
Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.
Ting, David Z.↗