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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

Development of High Temperature Gas Sensor Technology

The measurement of engine emissions is important for their monitoring and control. However, the ability to measure these emissions in-situ is limited. We are developing a family of high temperature gas sensors which are intended to operate in harsh environments such as those in an engine. The development of these sensors is based on progress in two types of technology: (1) The development of SiC-based semiconductor technology; and (2) Improvements in micromachining and microfabrication technology. These technologies are being used to develop point-contact sensors to measure gases which are important in emission control especially hydrogen, hydrocarbons, nitrogen oxides, and oxygen. The purpose of this paper is to discuss the development of this point-contact sensor technology. The detection of each type of gas involves its own challenges in the fields of materials science and fabrication technology. Of particular importance is sensor sensitivity, selectivity, and stability in long-term, high temperature operation. An overview is presented of each sensor type with an evaluation of its stage of development. It is concluded that this technology has significant potential for use in engine applications but further development is necessary.

Hunter, Gary W.↗
NASA NTRS2002

High-Temperature Gas Sensor Array (Electronic Nose) Demonstrated

The ability to measure emissions from aeronautic engines and in commercial applications such as automotive emission control and chemical process monitoring is a necessary first step if one is going to actively control those emissions. One single sensor will not give all the information necessary to determine the chemical composition of a high-temperature, harsh environment. Rather, an array of gas sensor arrays--in effect, a high-temperature electronic "nose"--is necessary to characterize the chemical constituents of a diverse, high-temperature environment, such as an emissions stream. The signals produced by this nose could be analyzed to determine the constituents of the emission stream. Although commercial electronic noses for near-room temperature applications exist, they often depend significantly on lower temperature materials or only one sensor type. A separate development effort necessary for a high-temperature electronic nose is being undertaken by the NASA Glenn Research Center, Case Western Reserve University, Ohio State University, and Makel Engineering, Inc. The sensors are specially designed for hightemperature environments. A first-generation high-temperature electronic nose has been demonstrated on a modified automotive engine. This nose sensor array was composed of sensors designed for hightemperature environments fabricated using microelectromechanical-systems- (MEMS-) based technology. The array included a tin-oxide-based sensor doped for nitrogen oxide (NOx) sensitivity, a SiC-based hydrocarbon (CxHy) sensor, and an oxygen sensor (O2). These sensors operate on different principles--resistor, diode, and electrochemical cell, respectively--and each sensor has very different responses to the individual gases in the environment. A picture showing the sensor head for the array is shown in the photograph on the left and the sensors installed in the engine are shown in the photograph on the right. Electronics are interfaced with the sensors for temperature control and signal conditioning, and packaging designed for high temperatures is necessary for the array to survive the engine environment.

Hunter, Gary W.↗
NASA NTRS1988

Optical Sensor Of High Gas Temperatures

Contact pyrometer resists effects of heat, vibration, and moisture. New sensor consists of shielded sapphire rod with sputtered layer of precious metal on end. Metal layer acts as blackbody. Emits radiation having known dependence of spectral distribution with temperature of metal and temperature of hot gas flowing over metal. Fiber-optic cable carries radiation from sapphire rod to remote photodetector.

Hill, Arthur J.↗
NASA NTRS1996

Electronic and Interfacial Properties of PD/6H-SiC Schottky Diode Gas Sensors

Pd/SiC Schottky diodes detect hydrogen and hydrocarbons with high sensitivity. Variation of the diode temperature from 100 C to 200 C shows that the diode sensitivity to propylene is temperature dependent. Long-term heat treating at 425 C up to 140 hours is carried out to determine the effect of extended heat treating on the diode properties and gas sensitivity. The heat treating significantly affects the diode's capacitive characteristics, but the diode's current carrying characteristics are much more stable with a large response to hydrogen. Scanning Electron Microscopy and X-ray Spectrometry studies of the Pd surface after the heating show cluster formation and background regions with grain structure observed in both regions. The Pd and Si concentrations vary between grains. Auger Electron Spectroscopy depth profiles revealed that the heat treating promoted interdiffusion and reaction between the Pd and SiC dw broadened the interface region. This work shows that Pd/SiC Schottky diodes have significant potential as high temperature gas sensors, but stabilization of the structure is necessary to insure their repeatability in long-term, high temperature applications.

Chen, Liang-Yu↗
NASA NTRS2002

Development of Sic Gas Sensor Systems

Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

Hunter, G. W.↗
NASA NTRS1997

SiC-Based Schottky Diode Gas Sensors

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

Hunter, Gary W.↗
NASA NTRS1998

"Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

Lu, W. J.↗
NASA NTRS2013

Packaging Technologies for High Temperature Electronics and Sensors

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Electronic packaging↗
NASA NTRS2013

Packaging Technologies for High Temperature Electronics and Sensors

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500 C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550 C. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500 C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500 C are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

Chen, Liang-Yu↗
NASA NTRS2007

An Overview of Wide Bandgap Silicon Carbide Sensors and Electronics Development at NASA Glenn Research Center

A brief overview is presented of the sensors and electronics development work ongoing at NASA Glenn Research Center which is intended to meet the needs of future aerospace applications. Three major technology areas are discussed: 1) high temperature SiC electronics, 2) SiC gas sensor technology development, and 3) packaging of harsh environment devices. Highlights of this work include world-record operation of SiC electronic devices including 500?C JFET transistor operation with excellent properties, atomically flat SiC gas sensors integrated with an on-chip temperature detector/heater, and operation of a packaged AC amplifier. A description of the state-of-the-art is given for each topic. It is concluded that significant progress has been made and that given recent advancements the development of high temperature smart sensors is envisioned.

Hunter, Gary W.↗
NASA NTRSDate not supplied

A Brief Overview of Relevant Silicon Carbide Electronics and Sensor Development for Long Duration Venus Surface Exploration

This presentation concentrates on the potential of long duration Venus surface missions, and the role of Silicon Carbide (SiC) electronics and sensor advancements in such exploration. For example, SiC integrated circuit (IC) electronics have matured to a state where a simple long-life scientific probe is feasible for extended Venus surface operations. These electronics have been demonstrated for more than a year at 500˚C, and 60 days in high-fidelity simulated Venus surface conditions [1-2]. Further, high temperature chemical sensing technology, including SiC-based gas sensors, integrated with SiC electronics can enable future exploration of the Venus surface atmosphere [3]. Continued maturation of these high temperature electronics and sensors has been part of the Long-Lived In-Situ Solar System Explorer (LLISSE) project to provide an operational system for in situ exploration of the Venus surface up to 60 days [4]. A key focus of this work includes increasing the complexity and decreasing the power consumption of the ICs which will pave the way to enhanced capabilities, such as long-duration Venus seismic measurements and other mission capabilities currently under development. This is in parallel to work expanding the capabilities of the sensor technology to provide science measurements on the Venus surface. This presentation will give an overview of possible extended duration Venus surface exploration and some of the SiC-based technologies that can enable this exploration.

high temperature Venus surface electronics sensors↗
NASA NTRS2005

Diode Laser Sensors for Arc-Jet Characterization

The development and application of tunable diode laser (TDL) absorption sensors to monitor the health and operating conditions in the large-scale 60 MW arc-heated- plasma wind-tunnel at NASA Ames Research Center is reported. The interactive heating facility (THF) produces re-entry flow conditions by expanding the gas heated in a constricted plasma arc-heater to flow at high velocity over a model located in a test cabin. This facility provides the conditions needed to test thermal protective systems for spacecraft re-entering the earth s atmosphere. TDL sensors are developed to monitor gas flows in both the high-temperature constricted flow and the supersonic expansion flow into test cabin. These sensors utilize wavelength-tuned diode lasers to measure absorption transitions of atomic oxygen near 777.2 nm, atomic nitrogen near 856.8 nm, and atomic copper near 793.3 nm. The oxygen and nitrogen sensors measure the population density in exited electronic states of these atoms. The measurements combined with the assumption of local thermal and chemical equilibrium yield gas temperature (typically near 7,000K). The nitrogen and oxygen population temperatures are redundant, and their close agreement provides an important test of the local thermal equilibrium assumption. These temperature sensors provide time-resolved monitors of the operating conditions of the arc-heater and can be used to verify and control the test conditions. An additional TDL sensor was developed to monitor the copper concentration in the arc-heater flow yielding values as high as 13 ppm. Measurements of copper in the flow can identify flow conditions with unacceptably rapid electrode erosion, and hence this sensor provides valuable information needed to schedule maintenance to avoid costly arc-heater failure. TDL sensors were also developed for measurements in the test cabin, where absorption measurements of the populations of argon and molecular nitrogen in excited metastable electronic states established that the number density of these excited species is much lower than estimated using frozen-chemistry approximations. This key finding suggests that in the post-expansion region there is not a significant energy sequestration in electronically excited species. Finally, TDL measurements of atomic potassium seeded into the test cabin flow were used to directly measure the static temperature of the test gas. The results of this study illustrate the high potential of time-resolved TDL measurements for routine and economical sensing of arc-heater health (gas temperature and electrode erosion) as well as the time-resolved test-cabin-flow conditions in front of the model.

Hanson, Ronald K.↗
NASA NTRS1983

Fiberoptics technology and its application to propulsion control systems

Current work on optical sensors and optically controlled actuators for use in air-breathing engine control systems is reviewed with particular reference to the design and operation of several new fiber-optic devices. These include a tachometer, a rotary position encoder, a Fabry-Perot interferometer and a rare-earth sensor for measuring engine gas temperatures, a high-temperature photoswitch designed for the range -55 to 260 C, and optical cables and connectors. The advantages of optics over conventional wire systems used for sensing and actuator control are briefly discussed.

Baumbick, R. J.↗
NASA NTRS1986

Research instrumentation for hot section components of turbine engines

Programs to develop research instrumentation for use on hot section components of turbine engines are discussed. These programs can be separated into two categories: one category includes instruments which can measure the environment within the combustor and turbine components, the other includes instruments which measure the response of engine components to the imposed environment. Included in the first category are instruments to measure total heat flux and fluctuating gas temperature. High temperature strain measuring systems, thin film sensors (e.g., turbine blade thermocouples) and a system to view the interior of a combustor during engine operation are programs which comprise the second category. The paper will describe the state of development of these sensors and measuring systems and, in some cases, show examples of measurements made with this instrumentation. The discussion will cover work done at NASA Lewis and at various contractor facilities.

Englund, D. R.↗
NASA NTRS2014

Structural Health Monitoring on Turbine Engines Using Microwave Blade Tip Clearance Sensors

The ability to monitor the structural health of the rotating components, especially in the hot sections of turbine engines, is of major interest to aero community in improving engine safety and reliability. The use of instrumentation for these applications remains very challenging. It requires sensors and techniques that are highly accurate, are able to operate in a high temperature environment, and can detect minute changes and hidden flaws before catastrophic events occur. The National Aeronautics and Space Administration (NASA) has taken a lead role in the investigation of new sensor technologies and techniques for the in situ structural health monitoring of gas turbine engines. As part of this effort, microwave sensor technology has been investigated as a means of making high temperature non-contact blade tip clearance, blade tip timing, and blade vibration measurements for use in gas turbine engines. This paper presents a summary of key results and findings obtained from the evaluation of two different types of microwave sensors that have been investigated for use possible in structural health monitoring applications. The first is a microwave blade tip clearance sensor that has been evaluated on a large scale Axial Vane Fan, a subscale Turbofan, and more recently on sub-scale turbine engine like disks. The second is a novel microwave based blade vibration sensor that was also used in parallel with the microwave blade tip clearance sensors on the experiments with the sub-scale turbine engine disks.

Gas Turbine Engines↗
NASA NTRS1994

Isolating Gas Sensor From Pressure And Temperature Effects

Two-stage flow system enables oxygen sensor in system to measure oxygen content of low-pressure, possibly-high-temperature atmosphere in test environment while protecting sensor against possibly high temperature and fluctuations in pressure of atmosphere. Sensor for which flow system designed is zirconium oxide oxygen sensor sampling atmospheres in high-temperature wind tunnels. Also adapted to other gas-analysis instruments that must be isolated from pressure and temperature effects of test environments.

Sprinkle, Danny R.↗
NASA NTRS1997

SiC-Based Gas Sensors

Electronic grade Silicon Carbide (SiC) is a ceramic material which can operate as a semiconductor at temperatures above 600 C. Recently, SiC semiconductors have been used in Schottky diode gas sensor structures. These sensors have been shown to be functional at temperatures significantly above the normal operating range of Si-based devices. SiC sensor operation at these higher temperatures allows detection of gases such as hydrocarbons which are not detectable at lower temperatures. This paper discusses the development of SiC-based Schottky diode gas sensors for the detection of hydrogen, hydrocarbons, and nitrogen oxides (NO(x)). Sensor designs for these applications are discussed. High sensitivity is observed for the hydrogen and hydrocarbon sensors using Pd on SiC Schottky diodes while the NO(x) sensors are still under development. A prototype sensor package has been fabricated which allows high temperature operation in a room temperature ambient by minimizing heat loss to that ambient. It is concluded that SiC-based gas sensors have considerable potential in a variety of gas sensing applications.

Chen, Liang-Yu↗