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At least 19 records

Driver circuit for inductive loads

Circuit, based on use of power transistors which do not display second breakdown under valve loading, drives inductive loads. Peak voltages, power dissipations, heat sink requirements, and thermal stability considerations can be obtained by theoretical analysis.

Cooke, W. A.↗

A linearly controlled direct-current power source for high-current inductive loads in a magnetic suspension wind tunnel

The NASA Langley 6 inch magnetic suspension and balance system (MSBS) requires an independently controlled bidirectional DC power source for each of six positioning electromagnets. These electromagnets provide five-degree-of-freedom control over a suspended aerodynamic test model. Existing power equipment, which employs resistance coupled thyratron controlled rectifiers as well as AC to DC motor generator converters, is obsolete, inefficient, and unreliable. A replacement six phase bidirectional controlled bridge rectifier is proposed, which employs power MOSFET switches sequenced by hybrid analog/digital circuits. Full load efficiency is 80 percent compared to 25 percent for the resistance coupled thyratron system. Current feedback provides high control linearity, adjustable current limiting, and current overload protection. A quenching circuit suppresses inductive voltage impulses. It is shown that 20 kHz interference from positioning magnet power into MSBS electromagnetic model position sensors results predominantly from capacitively coupled electric fields. Hence, proper shielding and grounding techniques are necessary. Inductively coupled magnetic interference is negligible.

Tripp, John S.↗

Development of a Tunable Electromechanical Acoustic Liner for Engine Nacelles

This report describes the development of a tunable electromechanical Helmholtz resonator (EMHR) for engine nacelles using smart materials technology. This effort addresses both near-term and long-term goals for tunable electromechanical acoustic liner technology for the Quiet Aircraft Technology (QAT) Program. Analytical models, i.e. lumped element model (LEM) and transfer matrix (TM) representation of the EMHR, have been developed to predict the acoustic behavior of the EMHR. The models have been implemented in a MATLAB program and used to compare with measurement results. Moreover, the prediction performance of models is further improved with the aid of parameter extraction of the piezoelectric backplate. The EMHR has been experimentally investigated using standard two-microphone method (TMM). The measurement results validated both the LEM and TM models of the EMHR. Good agreement between predicted and measured impedance is obtained. Short- and open circuit loads define the limits of the tuning range using resistive and capacitive loads. There is approximately a 9% tuning limit under these conditions for the non-optimized resonator configuration studied. Inductive shunt loads result in a 3 degree-of-freedom DOF) system and an enhanced tuning range of over 20% that is not restricted by the short- and open-circuit limits. Damping coefficient ' measurements for piezoelectric backplates in a vacuum chamber are also performed and indicate that the damping is dominated by the structural damping losses, such as compliant boundaries, and other intrinsic loss mechanisms. Based on models of the EMHR, a Pareto optimization design of the EMHR has been performed for the EMHR with non-inductive loads. The EMHR with non-inductive loads is a 2DOF system with two resonant fiequencies. The tuning ranges of the two resonant frequencies of the EMHR with non-inductive loads cannot be optimized simultaneously; a trade-off (i.e., a Pareto solution) must be reached. The Pareto solution provides the information for a designer that shows how design trade-offs can be used to satisfy specific design requirements. The optimization design of the EMHR with inductive loads aims at optimal tuning of these three resonant fiequencies. The results indicate that it is possible to keep the acoustic reactance of the resonator close to a constant over a given frequency range. An effort to mimic the second layer of the NASA 2DOF liner using a piezoelectric composite diaphragm has been made. The optimal acoustic reactance of the second layer of the NASA 2DOF liner is achieved using a thin PVDF composite diaphragm, but matching the acoustic resistance requires further investigation. Acoustic energy harvesting is achieved by connecting the EMHR to an energy reclamation circuit that converts the ac voltage signal across the piezoceramic to a conditioned dc signal. Energy harvesting experiment yields 16 m W continuous power for an incident SPL of 153 dB. Such a level is sufficient to power a variety of low power electronic devices. Finally, technology transfer has been achieved by converting the original NASA ZKTL FORTRAN code to a MATLAB code while incorporating the models of the EMHR. Initial studies indicate that the EMHR is a promising technology that may enable lowpower, light weight, tunable engine nacelle liners. This technology, however, is very immature, and additional developments are required. Recommendations for future work include testing of sample EMHR liner designs in NASA Langley s normal incidence dual-waveguide and the grazing-incidence flow facility to evaluating both the impedance characteristics as well as the energy reclamation abilities. Additional design work is required for more complex tuning circuits with greater performance. Poor electromechanical coupling limited the electromechanical tuning capabilities of the proof of concept EMHR. Different materials than those studies and perhaps novel composite material systems may dramatically improvehe electromechanical coupling. Such improvements are essential to improved mimicking of existing double layer liners.

Liu, Fei↗

Static and Switching Characteristics of a 4H-SiC Based BJT to 200 C

Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from 23 to 200 C. All testing was done in a pulse mode at low duty cycle (approx. 0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of either 7 or 0.6 V. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 OMEGA non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 81 to 97 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 30 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 61 to 77 ns with the 7 V sweep-out and 130 to 150 ns with the 0.6 V sweep-out. At a fixed temperature and I(sub C), the turn-off time decreased slightly with decreasing I(sub B), for I(sub B) sufficient to still provide full turn-on. The ratio of conduction to switching losses is estimated, based on the observed I(sub C) transition times and static curves. An estimate at 200 kHz and a 50 percent duty cycle shows that under practicable conditions the two losses can be comparable. Hence the evidence obtained does not support the occasionally voiced concern of necessarily unacceptably high conduction losses in SiC-based BJTs.

Niedra, Janis M.↗

Switching Characteristics of a 4H-SiC Based Bipolar Junction Transistor to 200 C

Static curves and resistive load switching characteristics of a 600 V, 4 A rated, SiC-based NPN bipolar power transistor (BJT) were observed at selected temperatures from room to 200 C. All testing was done in a pulse mode at low duty cycle (approx.0.1 percent). Turn-on was driven by an adjustable base current pulse and turn-off was accelerated by a negative base voltage pulse of 7 V. These base drive signals were implemented by 850 V, gated power pulsers, having rise-times of roughly 10 ns, or less. Base charge sweep-out with a 7 V negative pulse did not produce the large reverse base current pulse seen in a comparably rated Si-based BJT. This may be due to a very low charge storage time. The decay of the collector current was more linear than its exponential-like rise. Switching observations were done at base drive currents (I(sub B)) up to 400 mA and collector currents (I(sub C)) up to 4 A, using a 100 Omega non-inductive load. At I(sub B) = 400 mA and I(sub C) = 4 A, turn-on times typically varied from 80 to 94 ns, over temperatures from 23 to 200 C. As expected, lowering the base drive greatly extended the turn-on time. Similarly, decreasing the load current to I(sub C) = 1 A with I(sub B) = 400 mA produced turn-on times as short as 34 ns. Over the 23 to 200 C range, with I(sub B) = 400 mA and I(sub C) = 4 A, turn-off times were in the range of 72 to 84 ns with the 7 V sweep-out.

Niedra, Janis M.↗

Basic suppression techniques are evaluated

Investigation of standard suppression methods facilitates switching of inductively loaded circuits which causes interference in adjacent electronic equipment. The data are reduced to tabular form and rapid selection of components by the designer can be made without lengthy calculations or trial and error manipulations.

Dawirs, H. N.↗

Fast-acting self-healing metallic fuse.

Description of a fast-acting nonmechanical self-healing mercury fuse capable of protecting a high current circuit or device from overcurrent fault damages. Basically the self-healing fuse consists of two enclosed mercury reservoirs connected by a fine capillary tube filled with mercury that serves as the fusing element. It is pointed out that a better understanding of the energy conversion process involved in the operation of the device could help explore other device configurations (such as a tapering geometry and use of magnetic field to drive the arc into the fuse wall on inductive loads, etc.) and thus extend the range of capabilities for this type of protective device.

Schwartz, F. C.↗

Electronic power generators for ultrasonic frequencies

The design and construction of an ultrasonic frequency electronic power generator are discussed. The principle design elements of the generator are illustrated. The generator provides an inductive load with an output power of two kilowatts and a variable output frequency in the fifteen to thirty KiloHertz range. The method of conducting the tests and the results obtained with selected materials are analyzed.

Ciovica, D.↗

Continuation of surge life of transient voltage suppressor

Efforts expended in testing, analyzing and the development of a meaningful definition of the mean number of peak pulses before failure (mp2bf) levels of a family of transient voltage suppressor devices were documented. Tests were done to determine the ability of the transient suppressor to effectively and reliably protect against severe short term, millisecond range, and transient voltages of the types resulting from inductive load switching and induced lightning. Existing pulse testing instrumentation was utilized, interfaced to an automatic sequencing test rack accommodating up to 50 devices. Tests were performed in step stress increments of 25% beginning at 25% and extending thru 100% rated I(pp) for each voltage category. The four voltage types test were the 6.8V, 33V, 91V, and 190V. Engineering efforts addressed the problem of improving the reliability of the 190V types.

Clark, O. M.↗

Transistor screening evaluation SJ6708H

A manufacturer was contracted to screen 125 transistors capable of withstanding the high level inductive voltages obtained when switching inductive loads. Planned differences included a change in die bonding to comply with NASA's desire for hard solder die attachment which further necessitated a change in package to conform to the required die mounting system. Evaluation of the electrical performance and recommended changes were made during the preliminary build phase of the program. The following sections are outlined: (1) narrative outline; (2) customer data summary and X-ray reports; (3) device specification; (4) failure analysis reports; (5) test facilities list; and (6) test measurement data.

Barton, J. L.↗

Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

Berning, D.↗

Pulsed thyristor trigger control circuit

A trigger control circuit is provided for producing firing pulses for the thyristor of a thyristor control system such as a power factor controller. The control circuit overcomes thyristor triggering problems involved with the current lag associated with controlling inductive loads and utilizes a phase difference signal, already present in the power factor controller, in deriving a signal for inhibiting generation of a firing pulse until no load current is flowing from the preceding half cycle and thereby ensuring that the thyristor is triggered on during each half cycle.

Nola, F. J.↗

Hybrid power semiconductor

The voltage rating of a bipolar transistor may be greatly extended while at the same time reducing its switching time by operating it in conjunction with FETs in a hybrid circuit. One FET is used to drive the bipolar transistor while the other FET is connected in series with the transistor and an inductive load. Both FETs are turned on or off by a single drive signal of load power, the second FET upon ceasing conductions, rendering one power electrode of the bipolar transistor open. Means are provided to dissipate currents which flow after the bipolar transistor is rendered nonconducting.

Chen, D. Y.↗

Observation of Single-Event Burnout During Inductive Switching

1A power MOSFET demonstrated destructive Single-Event Effect (SEE) during ion irradiation in a switching circuit. Further investigation showed that the inductive load causing a spike in the drain-to-source voltage (VDS) that exceeded the manufacturer’s rating for several nanoseconds was enough to allow SEB. These results indicate that SEB may occur in a very short window and flyback is critical for disciplined power supply design.

Menke, Rob↗

Transient and Steady-state Tests of the Space Power Research Engine with Resistive and Motor Loads

The NASA Lewis Research Center (LeRC) has been testing free-piston Stirling engine/linear alternators (FPSE/LA) to develop advanced power convertors for space-based electrical power generation. Tests reported herein were performed to evaluate the interaction and transient behavior of FPSE/LA-based power systems with typical user loads. Both resistive and small induction motor loads were tested with the space power research engine (SPRE) power system. Tests showed that the control system could maintain constant long term voltage and stable periodic operation over a large range of engine operating parameters and loads. Modest resistive load changes were shown to cause relatively large voltage and, therefore, piston and displacer amplitude excursions. Starting a typical small induction motor was shown to cause large and, in some cases, deleterious voltage transients. The tests identified the need for more effective controls, if FPSE/LAs are to be used for stand-alone power systems. The tests also generated a large body of transient dynamic data useful for analysis code validation.

Rauch, Jeffrey S.↗