Modeling integrated circuits for computing
Integrated circuit models for computer analysis and design
Herskowitz, G. J.↗
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An eclectic integrated circuit reliability model
A general form of a comprehensive reliability modeling rationale was formulated for the integrated circuit. Integrated device failure models amenable to long term applications were investigated.
Fetcher, B. C.↗
Black-box models for linear integrated circuits
Black box modeling of linear integrated circuits for computer analysis in frequency domain
Murray-Lasso, M. A.↗
Computer-oriented modelling of integrated circuits - Algorithms for the dichotomous presentation of active networks
Computer oriented modeling of integrated circuits - algorithms for dichotomous presentation of active networks
INTEGRATED CIRCUIT↗
MOS integrated circuit fault modeling
Three digital simulation techniques for MOS integrated circuit faults were examined. These techniques embody a hierarchy of complexity bracketing the range of simulation levels. The digital approaches are: transistor-level, connector-switch-attenuator level, and gate level. The advantages and disadvantages are discussed. Failure characteristics are also described.
Sievers, M.↗
Modeling "Soft" Errors in Bipolar Integrated Circuits
Mathematical models represent single-event upset in bipolar memory chips. Physics of single-event upset in integrated circuits discussed in theoretical paper. Pair of companion reports present mathematical models to predict critical charges for producing single-event upset in bipolar randomaccess memory (RAM) chips.
Zoutendyk, J.↗
An Integrated Magnetic Circuit Model and Finite Element Model Approach to Magnetic Bearing Design
A code for designing magnetic bearings is described. The code generates curves from magnetic circuit equations relating important bearing performance parameters. Bearing parameters selected from the curves by a designer to meet the requirements of a particular application are input directly by the code into a three-dimensional finite element analysis preprocessor. This means that a three-dimensional computer model of the bearing being developed is immediately available for viewing. The finite element model solution can be used to show areas of magnetic saturation and make more accurate predictions of the bearing load capacity, current stiffness, position stiffness, and inductance than the magnetic circuit equations did at the start of the design process. In summary, the code combines one-dimensional and three-dimensional modeling methods for designing magnetic bearings.
Provenza, Andrew J.↗
Impact of Device Scaling on Deep Sub-micron Transistor Reliability: A Study of Reliability Trends using SRAM
As microelectronics are scaled in to the deep sub-micron regime, users of advanced technology CMOS, particularly in high-reliability applications, should reassess how scaling effects impact long-term reliability. An experimental based reliability study of industrial grade SRAMs, consisting of three different technology nodes, is proposed to substantiate current acceleration models for temperature and voltage life-stress relationships. This reliability study utilizes step-stress techniques to evaluate memory technologies (0.25mum, 0.15mum, and 0.13mum) embedded in many of today's high-reliability space/aerospace applications. Two acceleration modeling approaches are presented to relate experimental FIT calculations to Mfr's qualification data.
CMOS integrated circuits↗
Adaptation of models for minority-carrier devices to integrated circuits
Adaptation of models for minority carrier devices, and applicability in computer design evaluation studies of integrated circuits
ELECTRONIC EQUIPMENT TESTING↗
Computer-aided prediction of high-frequency performance limits in silicon bipolar integrated circuits
A circuit model for an existing silicon integrated bipolar junction transistor (IBJT) is used to evaluate presently achievable high frequency circuit performance. The relationship between circuit model and processing parameters are semi-quantitatively explored to make predictions on the frequency response, which can be achieved through realistic device fabrication modifications. A new figure of merit is introduced, which is defined as the signal frequency at which an integrated bipolar junction transistor can deliver a power gain of G. The most sensitive parameter influencing attainable high frequency IBJT performance is base resistance.
Burns, J. L.↗
A Comprehensive Cross-Model Framework for Benchmarking the Performance of Quantum Hamiltonian Simulations
Not Available
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Cost optimization in low volume VLSI circuits
The relationship of integrated circuit (IC) cost to electronic system cost is developed using models for integrated circuit cost which are based on design/fabrication approach. Emphasis is on understanding the relationship between cost and volume for custom circuits suitable for NASA applications. In this report, reliability is a major consideration in the models developed. Results are given for several typical IC designs using off the shelf, full custom, and semicustom IC's with single and double level metallization.
Cook, K. B., Jr.↗
Data-Driven Modeling of Grid-Forming Inverter Dynamics Using Power Hardware-in-the-Loop Experimentation
Not Available
24 POWER TRANSMISSION AND DISTRIBUTION↗
Inclusion of Body-Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors
The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.
Neudeck, Philip G.↗
Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors
The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.
Neudeck, Philip G.↗
A Generic and Multifunctional Electromagnetic Transient Model for Grid-Following Inverters
This paper presents a generic and multifunctional electromagnetic transient (EMT) dynamic model of grid-following (GFL) inverter-based resources (IBRs) using the PSCAD software platform. The features of the model include flexibility in selecting various types and combinations of DC sources covering photovoltaic modules, battery modules, and ideal DC-source modules as well as flexibility in selecting either switching or averaged models of the inverter. This model also covers exhaustive lists of controller algorithm, including open-loop/closed-loop PQ dispatch control, DC voltage and AC terminal voltage control, and conventional current control designed in the dq-domain, the ..alpha....beta.. -domain, and the positive-/negative-sequence domain. Moreover, this model is equipped with flexibility in selecting various types of current-limiting schemes, including saturation-based and latching-based current limiters, and anti-windup protection. Also, the EMT model is agnostic to the MVA rating and is suitable for interfacing transmission systems by complying with IEEE Std. 2800. The generality in the power circuits and the multifunctional options in the operation and control of the developed EMT model make it suitable for both academia and industry to study various power system aspects, including, but not limited to, the fault behavior of GFL IBRs, the impacts on the protection system, and the transient stability of a system interfaced with large numbers of GFL IBRs.
integrated circuit modeling↗
Visual Analytics of Crosstalk in Quantum Hardware
Crosstalk remains a major obstacle to building scalable and fault-tolerant quantum computers. Conventional diagnostic techniques-often based on numerical simulation or statistical modeling-struggle to scale with hardware complexity and offer limited interpretability. In this work, we present a visual analytics framework for diagnosing qubit crosstalk using lightweight, circuit-based models integrated with an interactive user interface. Our approach quantifies correlations between active and idle qubits under parameterized single- and twoqubit operations, enabling detection of both spatial and gateinduced crosstalk. The system incorporates qubit topology and gate performance data to support sector-based exploration and correlation mapping. This tool assists users in identifying correlated error sources, informing qubit placement strategies, and guiding noise-aware circuit design.
Chae, Junghoon [ORNL] (ORCID:0000000206016746)↗
Modeling and ZVS Operation of the Isolated Modular Multilevel DC–DC Converter With a Unified Trapezoidal Wave Modulation
Here, this article introduces a unified trapezoidal wave (UTW) modulation scheme for the isolated modular multilevel dc–dc (IM2dc) converter, which consolidates multiple existing modulation strategies for the IM2dc converter, including the quasi-square wave (QSW) modulation, trapezoidal wave modulation, and sinusoidal wave modulation, into a unified framework. Furthermore, this article introduces the harmonic state-space (HSS) equations to model the IM2dc converter based on the UTW modulation method. The HSS model operates in the frequency domain, enabling it to circumvent the complexities associated with time-domain analysis and seamlessly integrate with the UTW modulation. This article proceeds to analyze the real and reactive power transfer characteristics of the IM2dc converter, as well as the power factor, considering the influence of multiple modulation parameters. Subsequently, it delves into the examination of zero voltage switching (ZVS) conditions for the IM2dc converter based on the UTW modulation and the HSS model. The complete ZVS boundaries of the IM2dc converter, taking various voltage ratios into account, are derived. This article also illustrates the effects of including harmonic orders in the modeling process, modulation parameters, and internal harmonic ripples on the ZVS boundaries. Finally, experimental validation of the analyses is conducted on a down-scaled prototype.
42 ENGINEERING↗