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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

An eclectic integrated circuit reliability model

A general form of a comprehensive reliability modeling rationale was formulated for the integrated circuit. Integrated device failure models amenable to long term applications were investigated.

Fetcher, B. C.↗
NASA NTRS1985

MOS integrated circuit fault modeling

Three digital simulation techniques for MOS integrated circuit faults were examined. These techniques embody a hierarchy of complexity bracketing the range of simulation levels. The digital approaches are: transistor-level, connector-switch-attenuator level, and gate level. The advantages and disadvantages are discussed. Failure characteristics are also described.

Sievers, M.↗
NASA NTRS1985

Modeling "Soft" Errors in Bipolar Integrated Circuits

Mathematical models represent single-event upset in bipolar memory chips. Physics of single-event upset in integrated circuits discussed in theoretical paper. Pair of companion reports present mathematical models to predict critical charges for producing single-event upset in bipolar randomaccess memory (RAM) chips.

Zoutendyk, J.↗
NASA NTRS2003

An Integrated Magnetic Circuit Model and Finite Element Model Approach to Magnetic Bearing Design

A code for designing magnetic bearings is described. The code generates curves from magnetic circuit equations relating important bearing performance parameters. Bearing parameters selected from the curves by a designer to meet the requirements of a particular application are input directly by the code into a three-dimensional finite element analysis preprocessor. This means that a three-dimensional computer model of the bearing being developed is immediately available for viewing. The finite element model solution can be used to show areas of magnetic saturation and make more accurate predictions of the bearing load capacity, current stiffness, position stiffness, and inductance than the magnetic circuit equations did at the start of the design process. In summary, the code combines one-dimensional and three-dimensional modeling methods for designing magnetic bearings.

Provenza, Andrew J.↗
NASA NTRS2005

Impact of Device Scaling on Deep Sub-micron Transistor Reliability: A Study of Reliability Trends using SRAM

As microelectronics are scaled in to the deep sub-micron regime, users of advanced technology CMOS, particularly in high-reliability applications, should reassess how scaling effects impact long-term reliability. An experimental based reliability study of industrial grade SRAMs, consisting of three different technology nodes, is proposed to substantiate current acceleration models for temperature and voltage life-stress relationships. This reliability study utilizes step-stress techniques to evaluate memory technologies (0.25mum, 0.15mum, and 0.13mum) embedded in many of today's high-reliability space/aerospace applications. Two acceleration modeling approaches are presented to relate experimental FIT calculations to Mfr's qualification data.

CMOS integrated circuits↗
NASA NTRS1982

Computer-aided prediction of high-frequency performance limits in silicon bipolar integrated circuits

A circuit model for an existing silicon integrated bipolar junction transistor (IBJT) is used to evaluate presently achievable high frequency circuit performance. The relationship between circuit model and processing parameters are semi-quantitatively explored to make predictions on the frequency response, which can be achieved through realistic device fabrication modifications. A new figure of merit is introduced, which is defined as the signal frequency at which an integrated bipolar junction transistor can deliver a power gain of G. The most sensitive parameter influencing attainable high frequency IBJT performance is base resistance.

Burns, J. L.↗
NASA NTRS1982

Cost optimization in low volume VLSI circuits

The relationship of integrated circuit (IC) cost to electronic system cost is developed using models for integrated circuit cost which are based on design/fabrication approach. Emphasis is on understanding the relationship between cost and volume for custom circuits suitable for NASA applications. In this report, reliability is a major consideration in the models developed. Results are given for several typical IC designs using off the shelf, full custom, and semicustom IC's with single and double level metallization.

Cook, K. B., Jr.↗
NASA NTRS2017

Inclusion of Body-Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

Neudeck, Philip G.↗
NASA NTRS2017

Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors

The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.

Neudeck, Philip G.↗
NASA NTRS1992

Two-dimensional thermal modeling of power monolithic microwave integrated circuits (MMIC's)

Numerical simulations of the two-dimensional temperature distributions for a typical GaAs MMIC circuit are conducted, aiming at understanding the heat conduction process of the circuit chip and providing temperature information for device reliability analysis. The method used is to solve the two-dimensional heat conduction equation with a control-volume-based finite difference scheme. In particular, the effects of the power dissipation and the ambient temperature are examined, and the criterion for the worst operating environment is discussed in terms of the allowed highest device junction temperature.

Fan, Mark S.↗
NASA NTRS2017

The Impact of Harness Impedance on Hall Thruster Discharge Oscillations

Hall thrusters exhibit characteristic discharge voltage and current oscillations during steady-state operation. The lower frequency breathing-mode current oscillations are inherent to each thruster and could impact thruster operation and power processing unit (PPU) design. The design of the discharge output filter, in particular, the output capacitor is important because it supplies the high peak current oscillations that the thruster demands. However, space-rated, high-voltage capacitors are not readily available and can have significant mass and volume. So, it is important for a PPU designer to know what is the minimum amount of capacitance required to operate a thruster. Through Simulation Program with Integrated Circuit Emphasis modeling and electrical measurements on the Hall Effect Rocket with Magnetic Shielding thruster, it was shown that the harness impedance between the power supply and the thruster is the main contributor towards generating voltage ripple at the thruster. Also, increasing the size of the discharge filter capacitor, as previously implemented during thruster tests, does not reduce the voltage oscillations. The electrical characteristics of the electrical harness between the discharge supply and the thruster is crucial to system performance and could have a negative impact on performance, life and operation.

hollow cathodes↗
NASA NTRS2017

The Impact of Harness Impedance on Hall Thruster Discharge Oscillations

Hall thrusters exhibit characteristic discharge voltage and current oscillations during steady-state operation. The lower frequency breathing-mode current oscillations are inherent to each thruster and could impact thruster operation and power processing unit (PPU) design. The design of the discharge output filter, in particular, the output capacitor is important because it supplies the high peak current oscillations that the thruster demands. However, space-rated, high-voltage capacitors are not readily available and can have significant mass and volume. So, it is important for a PPU designer to know what is the minimum amount of capacitance required to operate a thruster. Through Simulation Program with Integrated Circuit Emphasis modeling and electrical measurements on the Hall Effect Rocket with Magnetic Shielding thruster, it was shown that the harness impedance between the power supply and the thruster is the main contributor towards generating voltage ripple at the thruster. Also, increasing the size of the discharge filter capacitor, as previously implemented during thruster tests, does not reduce the voltage oscillations. The electrical characteristics of the electrical harness between the discharge supply and the thruster is crucial to system performance and could have a negative impact on performance, life and operation.

ion engines↗