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Results for “inverted pyramids”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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7 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures

Poly-Si/SiOx passivating contacts were grown on inverted pyramid and random pyramid textured wafers to investigate the hypothesis that pinhole formation is most susceptible at the valleys and edges of a textured surface. Tetramethylammonium hydroxide (TMAH) etching and electron beam induced current (EBIC) were used to assess pinhole formation and charge-carrier transport. Scanning electron microscopy revealed that TMAH etching can expose pinhole locations on textured surfaces. We show that pinholes may preferentially form at the vertices of inverted pyramids. Our TMAH and EBIC analyses on random pyramids show no preferential oxide breakup at the pyramid valleys.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2020

Experimental demonstration of broadband solar absorption beyond the lambertian limit in certain thin silicon photonic crystals

The tantalizing possibility of 31% solar-to-electric power conversion efficiency in thin film crystalline silicon solar cell architectures relies essentially on solar absorption well beyond the Lambertian light trapping limit (Bhattacharya and John in Nat Sci Rep 9:12482, 2019). Up to now, no solar cell architecture has exhibited above-Lambertian solar absorption, integrated over the broad solar spectrum. In this work, we experimentally demonstrate two types of photonic crystal (PhC) solar cells architectures that exceed Lambertian light absorption, integrated over the entire 300–1,200 nm wavelength band. These measurements confirm theoretically predicted wave-interference-based optical resonances associated with long lifetime, slow-light modes and parallel-to-interface refraction. These phenomena are beyond the realm of ray optics. Using two types of 10-μm thick PhC’s, first an Inverted Pyramid PhC with lattice constant a= 2,500 nm and second a Teepee PhC with a = 1,200 nm, we observe solar absorption well beyond the Lambertian limit over λ = 950–1,200 nm. Our absorption measurements correspond to the maximum-achievable-photocurrent-density (MAPD), under AM1.5G illumination at 4-degree incident angle, 41.29 and 41.52 mA/cm2 for the Inverted Pyramid and Teepee PhC, respectively, in agreement with wave-optics, numerical simulations. Both of these values exceed the MAPD (= 39.63 mA/cm2) corresponding to the Lambertian limit for a 10-μm thick silicon for solar absorption over the 300–1,200 nm band.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Communication—Electrodeposition of Indium Directly on Silicon

Direct electrodeposition of indium onto silicon paves the way for advances in microelectronics, photovoltaics, and optoelectronics. Indium is generally electrodeposited onto silicon utilizing a physically or thermally deposited metallic seed layer. Eliminating this layer poses benefits in microelectronics by reducing resistive interfaces and in vapor-liquid-solid conversion to III-V material by allowing direct contact to the single-crystal silicon substrate for epitaxial conversion. We investigated conditions to directly electrodeposit indium onto n-type Si(100). We illustrate that a two-step galvanostatic plating at low temperatures can consistently produce smooth, continuous films of indium over large areas, in bump morphologies, and conformally into inverted pyramids.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Structure of V-defects in long wavelength GaN-based light emitting diodes

The V-defect is a naturally occurring inverted hexagonal pyramid structure that has been studied in GaN and InGaN growth since the 1990s. Strategic use of V-defects in pre-quantum well superlattices or equivalent preparation layers has enabled record breaking efficiencies for green, yellow, and red InGaN light emitting diodes (LEDs) utilizing lateral injection of holes through the semi-polar sidewalls of the V-defects. In this article, we use advanced characterization techniques such as scattering contrast transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, x-ray fluorescence maps, and atom probe tomography to study the active region compositions, V-defect formation, and V-defect structure in green and red LEDs grown on (0001) patterned sapphire and (111) Si substrates. We identify two distinct types of V-defects. The “large” V-defects are those that form in the pre-well superlattice and promote hole injection, usually nucleating on mixed (Burgers vector b = ±a±c⁠) character threading dislocations. In addition, “small” V-defects often form in the multi-quantum well region and are believed to be deleterious to high-efficiency LEDs by providing non-radiative pathways. The small V-defects are often associated with basal plane stacking faults or stacking fault boxes. Furthermore, we show through scattering contrast transmission electron microscopy that during V-defect filling, the threading dislocation, which runs up the center of the V-defect, will “bend” onto one of the six {10$\overline{1}$1} semi-polar planes. In conclusion, this result is essential to understanding non-radiative recombination in V-defect engineered LEDs.

42 ENGINEERING↗
DOE OSTI2023

Using the Gerchberg-Saxton algorithm to reconstruct nonmodulated pyramid wavefront sensor measurements

Adaptive optics (AO) is a technique to improve the resolution of ground-based telescopes by correcting, in real-time, optical aberrations due to atmospheric turbulence and the telescope itself. With the rise of Giant Segmented Mirror Telescopes (GSMT), AO is needed more than ever to reach the full potential of these future observatories. One of the main performance drivers of an AO system is the wavefront sensing operation, consisting of measuring the shape of the above mentioned optical aberrations. Aims. The non-modulated pyramid wavefront sensor (nPWFS) is a wavefront sensor with high sensitivity, allowing the limits of AO systems to be pushed. The high sensitivity comes at the expense of its dynamic range, which makes it a highly non-linear sensor. We propose here a novel way to invert nPWFS signals by using the principle of reciprocity of light propagation and the Gerchberg-Saxton (GS) algorithm. We test the performance of this reconstructor in two steps: the technique is first implemented in simulations, where some of its basic properties are studied. Then, the GS reconstructor is tested on the Santa Cruz Extreme Adaptive optics Laboratory (SEAL) testbed located at the University of California Santa Cruz. This new way to invert the nPWFS measurements allows us to drastically increase the dynamic range of the reconstruction for the nPWFS, pushing the dynamics close to a modulated PWFS. The reconstructor is an iterative algorithm requiring heavy computational burden, which could be an issue for real-time purposes in its current implementation. However, this new reconstructor could still be helpful in the case of many wavefront control operations. In conclusion, this reconstruction technique has also been successfully tested on the Santa Cruz Extreme AO Laboratory (SEAL) bench where it is now used as the standard way to invert nPWFS signal.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Synthesis and Crystal Structure of the Zintl Phases NaSrSb, NaBaSb and NaEuSb

This work details the synthesis and the crystal structures of the ternary compounds NaSrSb, NaBaSb and NaEuSb. They are isostructural and adopt the hexagonal ZrNiAl-type structure (space group P6¯2m; Pearson code hP9). The structure determination in all three cases was performed using single-crystal X-ray diffraction methods. The structure features isolated Sb3– anions arranged in layers stacked along the crystallographic c-axis. In the interstices, alkali and alkaline-earth metal cations are found in tetrahedral and square pyramidal coordination environments, respectively. The formal partitioning of the valence electrons adheres to the valence rules, i.e., Na+Sr2+Sb3–, Na+Ba2+Sb3– and Na+Eu2+Sb3– can be considered as Zintl phases with intrinsic semiconductor behavior. Electronic band structure calculations conducted for NaBaSb are consistent with this notion and show a direct gap of approx. 0.9 eV. Additionally, the calculations hint at possible inverted Dirac cones, a feature that is reminiscent of topological quantum materials.

36 MATERIALS SCIENCE↗