SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The Laser Processed Heat Exchanger project will investigate the use of laser processed surfaces to reduce mass and volume in liquid/liquid heat exchangers as well as the replacement of the harmful and problematic coatings of the Condensing Heat Exchangers (CHX). For this project, two scale unit test articles will be designed, manufactured, and tested. These two units are a high efficiency liquid/liquid HX and a high reliability CHX.
The status of pulsed excimer laser processing of PV cells is presented. The cost effective feasibility of fabricating high efficiency solar cells on Czochralski wafers using a pulsed excimer laser for junction formation, surface passivation, and front metallization. Laser annealing results were promising with the best AR coated cell having an efficiency of 16.1%. Better results would be expected with larger laser spot size because there was some degradation in open circuit voltage caused by laser spot overlap and edge effects. Surface heating and photolytic decomposition by the laser was used to deposit tungsten from the reaction of tungsten hexafluoride and hydrogen. The line widths were 5 to 10 mils, and the depositions passed the tape adhesion test. Thinner lines are practical using an optimized optical system.
The reliance on non-permanent coatings in Condensing Heat Exchanger (CHX) designs is a significant technical issue to be solved before long-duration spaceflight can occur. Therefore, high reliability CHXs have been identified by the Evolvable Mars Campaign (EMC) as critical technologies needed to move beyond low earth orbit. The Laser Processed Condensing Heat Exchanger project aims to solve these problems through the use of femtosecond laser processed surfaces, which have unique wetting properties and potentially exhibit anti-microbial growth properties. These surfaces were investigated to identify if they would be suitable candidates for a replacement CHX surface. Among the areas researched in this project include microbial growth testing, siloxane flow testing in which laser processed surfaces were exposed to siloxanes in an air stream, and manufacturability.
An excimer laser is used to activate previously implanted dopants on the backside of a backside-illuminated CCD. The controlled ion implantation of the backside and subsequent thin layer heating and recrystallization by the short wavelength pulsed excimer laser simultaneously activates the dopant and anneals out implant damage. This improves the dark current response, repairs defective pixels and improves spectral response. This process heats a very thin layer of the material to high temperatures on a nanosecond time scale while the bulk of the delicate CCD substrate remains at low temperature. Excimer laser processing backside-illuminated CCD's enables salvage and utilization of otherwise nonfunctional components by bringing their dark current response to within an acceptable range. This process is particularly useful for solid state imaging detectors used in commercial, scientific and government applications requiring a wide spectral response and low light level detection.
A systematic experimental study has been performed to determine the effects of each of the operating conditions in a double-pulse laser ablation process that is used to produce single-wall carbon nanotubes (SWCNTs). The comprehensive data compiled in this study have been analyzed to recommend conditions for optimizing the process and scaling up the process for mass production. The double-pulse laser ablation process for making SWCNTs was developed by Rice University researchers. Of all currently known nanotube-synthesizing processes (arc and chemical vapor deposition), this process yields the greatest proportion of SWCNTs in the product material. The aforementioned process conditions are important for optimizing the production of SWCNTs and scaling up production. Reports of previous research (mostly at Rice University) toward optimization of process conditions mention effects of oven temperature and briefly mention effects of flow conditions, but no systematic, comprehensive study of the effects of process conditions was done prior to the study described here. This was a parametric study, in which several production runs were carried out, changing one operating condition for each run. The study involved variation of a total of nine parameters: the sequence of the laser pulses, pulse-separation time, laser pulse energy density, buffer gas (helium or nitrogen instead of argon), oven temperature, pressure, flow speed, inner diameter of the flow tube, and flow-tube material.
The application of excimer laser in the fabrication of photovoltaic devices was investigated extensively. Processes included junction formation, laser assisted chemical vapor deposition metallization, and laser assisted chemical vapor deposition surface passivation. Results demonstrated that implementation of junction formation by laser annealing in production is feasible because of excellent control in junction depth and quality. Both metallization and surface passivation, however, were found impractical to be considered for manufacturing at this stage.
A modification of the traditional layer by layer process where the substrate is irradiated with laser light during the polycation and/or polyanion dipping cycles is described. By adjusting the laser irradiation time during dipping, irradiation power, number of bilayers, and the location and speed of laser irradiation, a variety of structures with controlled thicknesses can be fabricated. Laser patterned multilayer PAH/PTEBS polymer thin films were fabricated and characterized with absorbance mapping to demonstrate several patterning approaches. Results for 1) two laser patterned tracks, 2) single laser patterned track with varied average laser power across the sample from a continuously variable neutral density filter, and 3) laser patterning using a beam sent through multiple circular apertures are described. Based on the variable neutral density filter laser pattern, for 20 bilayer PAH/PTEBS films, an absorbance difference between off and on pattern of 0.1 requires an average laser power of less than 15 mW at 405 nm. The patterns produced are on the scale of several millimeters, though they could be made much smaller by focusing the laser used for patterning.
The design and operation of high-power lasers for industrial applications are discussed in reviews and reports. Topics addressed include the status of optical technology in the Netherlands, laser design, the deposition of optical energy, laser diagnostics, nonmetal processing, and energy coupling and plasma formation. Consideration is given to laser-induced damage to materials, fluid and gas flow dynamics, metal processing, and manufacturing. Graphs, diagrams, micrographs, and photographs are provided.
The statistical calculations of the mean and potential bias errors are considered with respect to their applicability to the randomly sampled velocity data obtained from a laser velocimeter. Techniques for displaying the resulting data in the form of arrow plots, flow streamline plots, and contour maps are also discussed. A description is presented of the operation of a new hardware interface between the signal processing electronics and the computer. The interface has been constructed to make it possible to use recently developed data processing techniques for obtaining turbulent power spectra from laser velocimeter data. Additional capabilities which were built into the interface allow the measurement of the velocity vector for each particle passing through the laser velocimeter sample window. By processing the data with extended versions of the turbulent power spectra techniques, cross spectra, interactions between velocity magnitude fluctuations, and flow angle fluctuations may be investigated.
Results of a study to utilize an Nd:glass laser for production line annealing of ion implantation induced damage in solar cells are reported. Czochralski-grown and sawn Si wafers 7.6 cm in diam, 0.35 mm thick, were implanted with phosphorus junctions and boron BSFs. Annealing with electron beam, laser, and firing of an Al paste to form the BSFs in different cells was compared. The laser was employed at 1.06 and 0.53 micron and in combination of both, with a 20-50 nsec pulsewidth, and energy densities of 1.2, 1.5, 1.9, and 2.1 J/sq cm. Best optical coupling was observed with the combined wavelengths and a 20 nsec pulse, using energy densities less than 1.5 J/sq cm. Although the Al sintered cells displayed the best characteristics, laser annealing is concluded to offer electrically active, defect-free, shallow junction Si substrates for high efficiency cells.
The goal was to demonstrate the cost effectiveness feasibility of fabricating 16% efficient solar cells on 125 mm diameter Cz wafers using pulsed excimer laser for junction formation, surface passivation, and front metallization.
Residual lattice damage by 5 keV ion implantation and surface flaws induced by wafer cleaning are proven to affect the V sub oc more adversely for laser annealed cells than conventional thermal diffusion. However, an alternative, molecular implantation of molecular species holds potential. The first experimental results are encouraging. The lack of a commercially available mass analyzed implantation with low energy, high fluence ions is constraining.
Progress in the Progress ceramic materials is reported. Experiments and models for sintering and microstructure evolution are described. Models and data for understanding the kinetics of grain boundary motion and of pore coarsening and new materials for fuel cells and batteries; are developed. New experimental techniques using lasers for forming fine, monosized powders and for forming stable and metastable structures from liquids, and solar materials research are also developed. Colloidal science and ceramics processing are explored; and research programs on the presintering science necessary for controlled green microstructures are outlined.
Preparation of amorphous thin films in semiconductors and their transition to the crystalline phase may apply to switching devices. Surfaces of single crystal samples of bulk In2Se3 and thin films of InSe were treated using an excimer laser, and microscopic examination showed the treated portions of the surface had become amorphous. Film samples of InSe were laser-treated like the bulk samples. Examination of these treated flims showed shifts in the optical transmittance spectra as well as surface morphology changes.
Radiation emitted from the exhaust flow of a multi-megawatt, quasi-steady magnetoplasmadynamic accelerator has been examined photoelectrically for argon mass flows from 6 to 32 g/sec and arc currents up to 25 kA. Vacuum ultraviolet radiation, indicative of resonance transitions, has been detected photoelectrically at various axial locations downstream of the arc chamber, consistent with a relaxation length calculated using a collisional-radiative recombination model. Photoelectric measurements of particular transitions in the neutral and first ionic state of argon show that populations of excited electronic states of AII are in excess of that which would be expected on the basis of Saha-Boltzmann equilibrium at the local electron temperature and number density. Optical depth measurements indicate that for a current of 4 kA and argon mass flow of 12 g/sec, a population inversion exists between the upper and lower states of the 0.4880 micron argon ion transition.
In sizing a condensing heat exchanger for space life support systems, there is a limit to allowable pressure drop along with a required vapor recuperation rate. This sizing is performed by using known heat transfer and pressure drop correlations in a numerical model. Dimpling the surface of an air-liquid channeled heat exchanger increases the convective heat transfer rate however creates difficulties within the numerical model as the flat plate correlations are no longer accurate. To increase the fidelity of the numerical model used for sizing the heat exchanger Computational Fluid Dynamics (CFD) with an SST k-ω turbulence model was performed on a periodic portion of the heat exchanger. Through CFD modeling a heat flux and pressure drop was measured across the heat exchanger channel, this information was used to create a localized Nusselt number that was incorporated into the numerical model along with a more accurate pressure drop due to the dimpled surface. Additionally, through modeling the heat exchanger after manufacturing and assembly in Computer Aided Drafting (CAD) software there was an increase in the measurement accuracy of geometric features which was incorporated into the numerical model for further increase in fidelity.
Laser assisted processing techniques utilized to produce the fine line, thin metal grid structures that are required to fabricate high efficiency solar cells are investigated. The tasks comprising these investigations are summarized. Metal deposition experiments are carried out utilizing laser assisted pyrolysis of a variety of metal bearing polymer films and metalloorganic inks spun onto silicon substrates. Laser decomposition of spun on silver neodecanoate ink yields very promising results. Solar cell comb metallization patterns are written using this technique.
The laser materials processing facility and its capabilities are described. A CO2 laser with continuous wave, repetitive pulse, and shaped power-time cycles is employed. The laser heated crystal growth station was used to produce metal and metal oxide single crystals and for cutting and shaping experiments using Si3N4 to displace diamond shaping processes.