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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1990

Analysis of Pt/SnO(sub x) during catalysis of CO oxidation

Temperature-programmed reduction using 6kPaH2 suggests that a sample consisting of 3 percent Pt supported directly on SnO2 is, under conditions of catalysis of CO oxidation used here, best represented as 3 percent Pt/SnO sub x, since the support is likely to partially reduced, probably in the vicinity of the metal/oxide interface. Catalytic measurements at 421 to 424 K show that this 3 percent Pt/SnO sub x is significantly more active per unit area of Pt than 6 percent Pt/SiO2 in catalyzing the oxidation of CO. In situ micro-FTIR reveals that while the latter has predominantly linearly bound CO on the surface under reaction conditions, the Pt/SnO sub x also has a species absorbing at 2168 cm(exp -1) which may be CO upon Pt in a positive oxidation state or weakly chemisorbed CO on zero-valent Pt. This may be directly involved in the low temperature oxidation of CO on the Pt/SnO sub x, since being weakly held the activation energy for its surface diffusion to the metal/oxide interface will be low; such mobile species could allow the high rates of surface transport and an increase in the fraction of the surface over which the CO oxidation occurs. FTIR also reveals carbonate-type species on the P/SnO sub c surface.

Sermon, Paul A.↗

NASA NTRS1982

Improved Model for MOS Breakdown

With an improved model, accelerated high-field tests can be used to predict gate-oxide breakdown in metal-oxide-semi-conductor (MOS) structures. Principal mechanism in MOS breakdown is mobile-ion emission from metal/oxide interface, which occurs during application of positive gate-bias field. Breakdown is related to clustering of emitted ions at localized defect sites in oxide/silicon interface. Using new model to interpret data, tests that normally take several weeks at low fields to accumulate sufficient statistics can be completed in only a few hours at high fields.

Li, S. P.↗

NASA NTRS1989

Making Durable Specimens For Electron Microscopy

Consistent metal-oxide cross sections prepared quickly. New process makes TEM/STEM cross sections of metal/oxide interfaces. After specimen bars oxidized, placed in specially designed mold. Following encapsulation in zinc alloy, 3-mm-diameter specimen bar sliced into disks suitable for further preparation steps. Technique used to prepare 3-mm-diameter specimens of cross sections of oxides of alloys intended for use at temperatures greater than approximately 600 degree C.

Doychak, Joseph↗

NASA NTRS1984

A study of tetrataenite

The tetrataenite in Dayton was examined using conventional transmission (TEM) and analytical electron microscopy (AEM). Tetrataenite was also simulated in terrestrial Fe-Ni alloys through electron irradiation of thin-foil specimens on the high voltage electron microscope (HVEM). The purpose was to correlate the results of the TEM, AEM and HVEM studies on Dayton and on terrestrial iron-nickel alloys to the low temperature iron-nickel phase diagram. Oxide forms spontaneously on the surfaces of thin-foil iron-nickel specimens. By determining the metal/oxide orientation relationships the reflections due to the oxide and the superlattice are distinguished. In Dayaton, the clear taenite (I) is fully ordered until near the cloudy zone interface. The ordered domains ranged in size from 30 to 650 nm with the largest domains corresponding to the highest Ni content and the smallest domain size corresponding to the lowest Ni content. In terrestrial alloys irradiated on the HVEM, the extent of electron irradiation induced ordering was determined as a function of temperature and composition. Ordering occurred in every specimen irradiated.

Reuter, K. B.↗

NASA NTRS1985

Chemical structure of interfaces

The interfacial structure of silicon/dielectric and silicon/metal systems is particularly amenable to analysis using a combination of surface spectroscopies together with a variety of chemical structures of Si/SiO2, Si/SiO2Si3N4, Si/Si2N2O, Si/SiO2/Al, and Si/Native Oxide interfaces using high resolution (0.350 eV FWHM) X ray photoelectron spectroscopy. The general structure of these dielectric interfaces entails a monolayer chemical transition layer at the Si/dielectric boundary. Amorphous Si substrates show a wide variety of hydrogenated Si and Si(OH) sub x states that are not observed in thermal oxidation of single crystal material. Extended SiO2 layers greater than 8 A in thickness are shown to be stoichiometric SiO2, but to exhibit a wide variety of local network structures. In the nitrogen containing systems, an approach to stoichiometric oxynitride compounds with interesting impurity and electron trapping properties are seen. In native oxides, substantial topographical nonuniformity in oxide thickness and composition are found. Analysis of metal/oxide interfacial layers is accomplished by analytical removal of the Si substrate by UHV XeF2 dry etching methods.

Grunthaner, F. J.↗