SEARCH · Search NASA
Results for “microfabricated ion trap”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Electric Field Noise in Microfabricated Ion Traps with Varied Capacitor Types and Trap Materials.
Abstract not provided.
Microfabricated Ion Traps on Sapphire for Larger Trap Areas and Higher Qubit Count
Surface ion traps are a promising platform for quantum computing due to their potential to store large numbers of ions that can be addressed by electrical and optical control signals in order to implement quantum algorithms. Increasing the power of the quantum computer requires increasing the number of ions, but this poses a significant challenge in that it leads to a non-linear increase in on-chip power dissipation. The primary contributor to this power scaling in current devices is the capacitance between the radio frequency (RF) electrode and the metal plane that shields the silicon substrate from the RF signals applied to it. Silicon has traditionally been chosen for the substrate material for compatibility with the processing required for multi-metal-level traps. In this work, we address these capacitance and fabrication challenges by replacing the commonly used silicon substrate with an insulating sapphire substrate to fabricate a multi-metal-level ion trap, while still employing common semiconductor manufacturing techniques. This change in substrate allows the design to remove the metal shielding from the device design, reducing the capacitance of the RF electrode. The electrical characteristics of these traps were measured, specifically trap impedance, capacitance, and voltage breakdown, and compared to nearly identical silicon trap devices. Finally, we used laser cutting techniques to shape a sapphire wafer into bowtie shapes matching silicon traps previously fabricated at Sandia National Labs to explore solutions for integrating sapphire substrates into non-rectangular ion trap designs.
Microfabricated ion trap chip with an integrated microwave antenna
An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces.
Microfabricated ion trap chip with in situ radio-frequency sensing
A radio-frequency (RF) surface ion trap chip includes an RF electrode and an integrated capacitive voltage divider in which an intermediate voltage node is capacitively connected between the RF electrode and a ground. A sensor output trace is connected to the intermediate voltage node.
In situ detection of RF breakdown on microfabricated surface ion traps
We report microfabricated surface ion traps are a principal component of many ion-based quantum information science platforms. The operational parameters of these devices are pushed to the edge of their physical capabilities as the experiments strive for increasing performance. When the applied radio-frequency (RF) voltage is increased excessively, the devices can experience damaging electric discharge events known as RF breakdown. We introduce two novel techniques for in situ detection of RF breakdown, which we implemented while characterizing the breakdown threshold of surface ion traps produced at Sandia National Laboratories. In these traps, breakdown did not always occur immediately after increasing the RF voltage, but often minutes or even hours later. This result is surprising in the context of the suggested mechanisms for RF breakdown in vacuum. Additionally, the extent of visible damage caused by breakdown events increased with the applied voltage. To minimize the probability for damage when RF power is first applied to a device, our results strongly suggest that the voltage should be ramped up over the course of several hours and monitored for breakdown.
In situ detection of RF breakdown on microfabricated surface ion traps [Slides]
Two techniques were developed to allow users of microfabricated surface ion traps to detect RF breakdown as soon as it happens, without needing to remove devices from vacuum and look at them with a microscope.
Bilayer Ion Trap Design for 2D Arrays
Junctions are fundamental elements that support qubit locomotion in two-dimensional ion trap arrays and enhance connectivity in emerging trapped-ion quantum computers. In surface ion traps they have typically been implemented by shaping radio frequency (RF) electrodes in a single plane to minimize the disturbance to the pseudopotential. However, this method introduces issues related to RF lead routing that can increase power dissipation and the likelihood of voltage breakdown. Here, we propose and simulate a novel two-layer junction design incorporating two perpendicularly rotoreflected (rotated, then reflected) linear ion traps. The traps are vertically separated, and create a trapping potential between their respective planes. The orthogonal orientation of the RF electrodes of each trap relative to the other provides perpendicular axes of confinement that can be used to realize transport in two dimensions. While this design introduces manufacturing and operating challenges, as now two separate structures have to be precisely positioned relative to each other in the vertical direction and optical access from the top is obscured, it obviates the need to route RF leads below the top surface of the trap and eliminates the pseudopotential bumps that occur in typical junctions. Here in this paper the stability of idealized ion transfer in the new configuration is demonstrated, both by solving the Mathieu equation analytically to identify the stable regions and by numerically modeling ion dynamics. Our novel junction layout has the potential to enhance the flexibility of microfabricated ion trap control to enable large-scale trapped-ion quantum computing.
Fault localization in a microfabricated surface ion trap using diamond nitrogen-vacancy center magnetometry
Here, as quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred, with likely integrated photonic components also adding to the electrical and fabrication complexity, making faults even harder to locate. In this work, we used a high-resolution quantum magnetic imaging technique, based on nitrogen-vacancy centers in diamond, to investigate short-circuit faults in an ion trap chip. We imaged currents from these short-circuit faults to ground and compared them to intentionally created faults, finding that the root cause of the faults was failures in the on-chip trench capacitors. This work, where we exploited the performance advantages of a quantum magnetic sensing technique to troubleshoot a piece of quantum computing hardware, is a unique example of the evolving synergy between emerging quantum technologies to achieve capabilities that were previously inaccessible.
Detecting and Minimizing RF Breakdown on Microfabricated Surface Ion Traps.
Abstract not provided.
Detecting and minimizing RF breakdown on microfabricated surface ion traps .
Abstract not provided.
Detecting and Minimizing RF Breakdown on Microfabricated Surface Ion Traps.
Abstract not provided.
Hybrid MEMS-CMOS ion traps for NISQ computing
Surging interest in engineering quantum computers has stimulated significant and focused research on technologies needed to make them manufacturable and scalable. In the ion trap realm this has led to a transition from bulk three-dimensional macro-scale traps to chip-based ion traps and included important demonstrations of passive and active electronics, waveguides, detectors, and other integrated components. At the same time as these technologies are being developed the system sizes are demanding more ions to run noisy intermediate scale quantum (NISQ) algorithms, growing from around ten ions today to potentially a hundred or more in the near future. To realize the size and features needed for this growth, the geometric and material design space of microfabricated ion traps must expand. In this paper we describe present limitations and the approaches needed to overcome them, including how geometric complexity drives the number of metal levels, why routing congestion affects the size and location of shunting capacitors, and how RF power dissipation can limit the size of the trap array. Finally, we also give recommendations for future research needed to accommodate the demands of NISQ scale ion traps that are integrated with additional technologies.
Ion Traps and Packaging for Heterogenous Integration - Chimera
Microfabricated surface ion traps and silicon-based photonics are critical technologies for scaling quantum systems. Current ion trap architectures face scalability and integration challenges due to limitations in optical access, fabrication techniques, and material compatibility. State-of-the-art quantum computers and atomic clocks are investigating monolithic integration, which necessitates custom traps for each ion species and has not overcome the integration hurdles presented by merging these technologies. The Chimera (Ion Traps and Packaging for Heterogeneous Integration) project proposes a novel approach utilizing heterogeneous integration (HI) of ion traps and photonic circuits. This separation of components allows for flexibility in ion trap design and reduces fabrication compromises. The Chimera project specifically designed an ion trap to interface vertically with a separately fabricated waveguide chip and demonstrates the first steps to integrating them at the packaging level. The ion trap features a large area of removed silicon, allowing the photonics chip outputs closer to the ion trap, improving alignment and packaging processes. The alignment must be accurate to < 1 µm to ensure that the light from the waveguide can overlap with the trapping region. This fine alignment must also be maintained through an ultra-high vacuum bake, a critical step in preparing an ion trap experiment. By combining separate chips, we demonstrate a new path for scaling trapped ion technology that is less reliant on monolithic integration. We successfully fabricated a trap with a large area of oxide removed, resulting in a region thinned to about 40 µm, a key milestone toward successful integration.
Microfabricated Devices and Ion Trapping Capabilities
Next generation ion traps will likely need to support tens if not hundreds of ions in order to achieve several logical qubits. As we scale to those sizes, the same problems we face now – rf dissipation, control I/O, and optical access – will only grow and become more complicated. While many of these challenges can potentially be solved with technology integration, independently researching the feasibility of that integration and other solutions may help reduce the time and risk in scaling up to larger traps, by testing on smaller less complex devices. We should also consider other fabrication techniques that may help scale to larger devices, such as: through-substrate-vias (TSVs), different metal coatings, exotic rf routing, on chip laser sources, or even a secondary macroscopic trap to reload ions from. To have these technologies ready for full scale integration when we need them, ion traps with some of these capabilities need to be produced now. Developing the rigorous fabrication methods for producing reliable traps takes time and experimentation. We propose developing larger ion traps and reliable integrated technology in conjunction to make both available faster.
Collection of fluorescence from an ion using trap-integrated photonics
Spontaneously emitted photons are entangled with the electronic and nuclear degrees of freedom of the emitting atom, so interference and measurement of these photons can entangle separate matter-based quantum systems as a resource for quantum information processing. Since confinement in a single-mode facilitates the photon interference needed for generating entanglement, the dipole emission patterns relevant in spontaneous emission present a mode-matching challenge. Current demonstrations rely on bulk photon-collection and manipulation optics that suffer from large component size and system-to-system variability—factors that impede scaling to the large numbers of entangled pairs needed for quantum information processing. To address these limitations, we demonstrate a collection method that enables passive phase stability, straightforward photonic manipulation, and intrinsic reproducibility. Specifically, we engineer a waveguide-integrated grating to couple photons emitted from a trapped ion into a single optical mode within a microfabricated ion-trap chip. Using the integrated collection optic, we characterize the collection efficiency, image the ion, and detect the ion’s quantum state. The integrated optic covers 2.18% of the solid angle and collects 1.97 ± 0.3% of the spontaneously emitted light incident on the grating for a total collection efficiency of 0.043% into a single-mode waveguide. This proof-of-principle demonstration lays the foundation for leveraging the inherent stability and reproducibility of integrated photonics to create, manipulate, and measure multipartite quantum states in arrays of quantum emitters.
Microfabricated Piezo-Optomechanical Switches for Trapped ion Quantum Computing.
Abstract not provided.
Ion Based Quantum Computing in Microfabricated Surface Traps
Explore the source record for details and available documents.