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Results for “multijunction solar cells”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Tunnel junctions for multijunction solar cells

Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.

Jain, Nikhil↗
DOE OSTI2019

Studying the Formation of Antireflection Coatings on Multijunction Solar Cells

The formation of antireflection coating on multijunction solar cells based on A{sub 3}B{sub 5} semiconductor heterostructures has been studied at the stage of structure surface processing by methods of plasmachemical, wet chemical, and ion-beam etching. A technology of creating antireflection coatings based on TiO{sub x}/SiO{sub 2} layers is developed. The obtained coatings are characterized by improved adhesion to the surface of heterostructure and reduced reflection coefficient of multijunction solar cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Electrical passivation of III-V multijunction solar cells with luminescent coupling effect

Perimeter recombination is one of the causes identified for having a nonuniform luminescent coupling effect in III-V multijunction solar cells. A potential solution could be the electrical passivation of the multijunction solar cell perimeter. To test this hypothesis, electrical passivation of InGaP/GaAs/Ge 3-junction solar cells was done by the atomic layer deposition of thin Al2O3 films. Further, perimeter passivation of a 3-junction solar cell relatively increased current collection measured at luminescent coupling and direct subcell excitation by as much as 11.4% and 29.8%, respectively. Meanwhile, the current homogeneity improved relatively by as much as 7.9% after electrical passivation. At 1-sun global standard illumination (AM 1.5G), 0.2% absolute conversion efficiency increase was achieved. Therefore, electrical passivation of fully working III-V multijunction solar cells is a non-invasive, post-treatment process that can recover losses due to surface defects caused by oxidation.

14 SOLAR ENERGY↗
DOE OSTI2018

Effect of Atmospheric Absorption Bands on the Optimal Design of Multijunction Solar Cells

The optimization of subcell bandgaps for seriesconnected multijunction solar cells is complicated by atmospheric absorption bands in terrestrial spectra, and this complexity increases with the number of subcells. We systematically characterize the resulting design space, and introduce a taxonomy for MJ cells based upon the position of subcell bandgaps with respect to atmospheric absorption bands. Once this is done, the full set of local efficiency optima can be quickly identified and described for arbitrarily large numbers of junctions, and deviations from current-matched designs can be more easily characterized and understood.

14 SOLAR ENERGY↗
DOE OSTI2022

Record Efficiency Multijunction Solar Cells with Strain-Balanced Quantum Well Superlattices

The absorption edge of a GaAs solar cell can be tuned to longer wavelengths with strain-balanced quantum wells, as an alternative to metamorphic epitaxy. For one-sun photovoltaic applications, an optimum bandgap for both single and multijunction solar cells is near the broad water absorption peak at 930 nm and can be accessed by a Ga0.9In0.1As alloy. This alloy is strained with respect to the GaAs substrate, and so only very thin ~10 nm layers can be grown without relaxation via dislocation formation. However, solar cells require significant thickness for complete absorption of the incoming solar spectrum, requiring many such layers. We have designed quantum well superlattices with up to 300 sets of carefully tuned strain-balanced GaInAs/GaAsP pairs by limiting composition modulation and material degradation. We have incorporated quantum well solar cells into multijunction devices to achieve record 32.9% two-junction and 39.5% three-junction solar cells under standard one-sun illumination. We will describe the physics of the quantum well devices and the growth conditions that lead to sharp interfaces and good material quality, as well as the characterization of the efficiencies.

GaAs↗
DOE OSTI2018

Multijunction Solar Cells With Graded Buffer Bragg Reflectors

Metamorphic solar cells can have optimal bandgap combinations through the use of compositionally graded buffers, where the lattice constant is slowly varied over several microns of growth. Bragg reflectors consist of several microns of alternating layers with refractive index contrast and provide a useful internal reflection to multijunction solar cells with optically thin subcells. In this work, we implement distributed Bragg reflectors within the compositionally graded buffers of inverted metamorphic solar cells to add functionality to the buffer. The reflectance of this AlGaInAs 'graded buffer Bragg reflector' is very similar to the reflectance of a similar AlGaAs Bragg reflector external to a buffer as well as the reflectance predicted by the transfer matrix model, indicating that the roughness of the buffer does not drastically reduce the reflection. Reflectance of 72%, 91%, and 98% is achieved in 2, 4, and 8 um buffers using AlGaInAs layers that alternate between 30% and 70% aluminum content. Using a 2 um graded buffer Bragg reflector, the 1.0-eV mismatched subcell of a GaAs/GaInAs tandem has a minor increase in threading dislocation density compared to a standard graded buffer and a small, 20 mV, loss in voltage. As the buffer is thickened, the voltage loss is recuperated and excellent subcell voltages are achieved, indicating that the Bragg reflector is not severely hindering dislocation glide. We demonstrate that the benefits of the graded buffer Bragg reflector for optically thin subcells and subcells containing quantum wells, and conclude that Bragg reflectors can effectively be implemented within graded buffers, adding functionality without adding cost.

14 SOLAR ENERGY↗
DOE OSTI2022

How Should Researchers Measure Perovskite-Based Monolithic Multijunction Solar Cells’ Performance? A Calibration Lab's Perspective

Perovskite multijunctions (PVSK MJs) have made remarkable progress with monolithic PVSK/PVSK tandems surpassing the efficiency of single-junction (1 J) PVSK cells and PVSK/Si cells reported to exceed the 30% efficiency mark. These efficiencies are reported at standard test conditions (STC), established by the photovoltaic (PV) community to facilitate comparison between devices and technologies. Herein, it is discussed why an accurate STC performance measurement for a MJ is more complicated than for a 1 J cell and the special aspects to be considered when measuring the current-voltage characteristics and the performance of PVSK-containing MJ cells are emphasized. It is discussed why a spectrally adjustable solar simulator is needed and the sequence of accurate performance measurement, namely measurement of the spectral response of each junction, adjustment of the spectrum, and appropriate protocols for measuring the power output of the device at STC, is presented. For all these, common errors and pitfalls that sometime lead to misleading interpretation of the results are presented, and the methods to evaluate the accuracy of the data when a spectrally adjustable solar simulator is not available are recommended. Finally, first step is taken toward recommending performance measurement approaches when high throughput is required as will eventually be in a production line.

14 SOLAR ENERGY↗
DOE OSTI2018

Internal Resistive Barriers Related to Zinc Diffusion During the Growth of Inverted Metamorphic Multijunction Solar Cells

Majority carrier barriers at heterointerfaces are a common source of non-linear resistance that hinders concentrator solar cell performance. The source of a particular barrier is often unclear in a multijunction device with numerous heterointerfaces. In this work, we demonstrate Zn-dopant diffusion during inverted metamorphic multijunction (IMM) device growth to be one key cause of internal barrier formation. Using an inverted GaAs/GaAs tandem solar cell with a high temperature annealing layer grown in between each subcell, we simulate the annealing conditions of a multijunction growth in a simplified structure. Through analysis of the device by secondary ion mass spectrometry (SIMS) and electrochemical capacitance-voltage profiling, we show that annealing causes Zn to diffuse out of the top cell Ga 0.5 In 0.5 P back surface field (BSF) and accumulate in the GaAs base. Through equilibrium band modeling, we show that the resultant doping profile forms an energetic barrier to hole flow in the valence band, which correlates with fill factor losses in the current-voltage curves measured under concentration. When we, instead, employ a C-doped Al 0.2 Ga 0.8 As BSF layer in the top cell, we do not observe evidence of a heterojunction barrier. We attribute this difference to the reduced diffusivity of carbon, confirmed by SIMS, as well as more favorable valence band offsets between GaAs and Al 0.2 Ga 0.8 As. Finally, we compare 5-junction IMM cells with Al 0.2 Ga 0.8 As:C and Ga 0.5 In 0.5 P:Zn BSF layers in the GaAs third junction, respectively, and show a significantly improved concentrator device performance when Al 0.2 Ga 0.8 As:C is employed. Lastly, we demonstrate the importance of designing annealing tolerance into multijunction structures that are subjected to extended annealing during growth.

14 SOLAR ENERGY↗
DOE OSTI2018

Spectral and Concentration Sensitivity of Multijunction Solar Cells at High Temperature

We model the performance of two-junction solar cells at very high temperatures up to ~400 degrees C for applications such as hybrid PV/solar-thermal power production. We show that high-temperature operation reduces the sensitivity of the cell efficiency to spectral content, but increases the sensitivity to concentration, both of which have implications for energy yield in terrestrial PV applications. For other high-temperature applications such as near-sun space missions, our findings indicate that concentration may be a useful tool to enhance cell efficiency.

14 SOLAR ENERGY↗
DOE OSTI2021

Proton-Radiation Tolerant All-Perovskite Multijunction Solar Cells

Radiation-resistant but cost-efficient, flexible, and ultralight solar sheets with high specific power (W g -1 ) are the "holy grail" of the new space revolution, powering private space exploration, low-cost missions, and future habitats on Moon and Mars. Herein, this study investigates an all-perovskite tandem photovoltaic (PV) technology that uses an ultrathin active layer (1.56 micrometers) but offers high power conversion efficiency, and discusses its potential for high-specific-power applications. This study demonstrates that all-perovskite tandems possess a high tolerance to the harsh radiation environment in space. The tests under 68 MeV proton irradiation show negligible degradation (<6%) at a dose of 10 13 p + cm -2 where even commercially available radiation-hardened space PV degrade >22%. Using high spatial resolution photoluminescence (PL) microscopy, it is revealed that defect clusters in GaAs are responsible for the degradation of current space-PV. By contrast, negligible reduction in PL of the individual perovskite subcells even after the highest dose studied is observed. Studying the intensity-dependent PL of bare low-gap and high-gap perovskite absorbers, it is shown that the V OC , fill factor, and efficiency potentials remain identically high after irradiation. Radiation damage of all-perovskite tandems thus has a fundamentally different origin to traditional space PV.

14 SOLAR ENERGY↗
DOE OSTI2021

Multijunction solar cells with graded buffer Bragg reflectors

Distributed Bragg reflectors are incorporated into the compositionally graded buffers of metamorphic solar cells, adding functionality to the buffer without adding cost. The reflection aids in collection in subcells that are optically thin due to low diffusion length, high bulk recombination, radiation hardness, partially-absorbing quantum structures, or simply for cost savings. Performance enhancements are demonstrated in GaAs subcells with QWs, which is beneficial when GaAs is not the ideal bandgap.

France, Ryan Matthew↗
DOE OSTI2022

Progress in three-terminal heterojunction bipolar transistor solar cells

Conventional solar cells, including multijunction solar cells, are based on pn junctions as building blocks. In contrast, the three-terminal heterojunction bipolar transistor solar cell (3T-HBTSC) explores the use of a bipolar transistor structure to build a solar cell. The limiting efficiency of this transistor structure equals that of a double-junction solar cell. However, since the 3T-HBTSC does not require tunnel junctions, its minimal structure has only three semiconductor layers, while the minimal structure of a double junction solar cell has six. This work reviews the operation principles of this solar cell and the steps carried out towards its practical implementation. Experimental results on a GaInP/GaAs HBTSC prototype with bottom interdigitated contacts are presented.

14 SOLAR ENERGY↗
DOE OSTI2018

Equivalent Performance in Three-Terminal and Four-Terminal Tandem Solar Cells

Tandem or multijunction solar cells are a promising method to circumvent the efficiency limit of single-junction solar cells, but there is ongoing debate over how best to interconnect the subcells in a tandem cell. In addition to four-terminal and two-terminal tandem cell architectures, a new three-terminal tandem cell architecture has recently been demonstrated, which features a standard two-terminal (front-back) circuit as well as an interdigitated back contact (IBC) circuit connected to the bottom cell. It has no middle contacts, and thus, maintains some of the simplicity of a two-terminal tandem. In this study, we measure four-terminal GaInP//Si and GaInP/GaAs//Si tandem cells in four-terminal and three-terminal configurations by connecting wires to mimic a three-terminal architecture. We demonstrate that both modes allow the same efficiencies exceeding 30% to be attained. Furthermore, we show that the IBC circuit not only collects excess power from the bottom cell, but that it can inject power into the bottom cell if it is current limiting the front-back circuit, enabling four-terminal performance in monolithic structures, regardless of which cell delivers less current.

14 SOLAR ENERGY↗
DOE OSTI2019

Printed assemblies of microscale triple–junction inverted metamorphic GaInP/GaAs/InGaAs solar cells

Inverted metamorphic (IMM) multijunction solar cells represent a promising material platform for ultrahigh efficiency photovoltaic systems (UHPVs) with a clear pathway to beyond 50% efficiency. The conventional device processing of IMM solar cells, however, typically involves wafer bonding of a centimeter-scale die and destructive substrate removal, thereby imposing severe restrictions in achievable cell size, type of module substrate, spatial layout, as well as cost effectiveness. Here, we report material design and fabrication strategies for microscale triple-junction IMM (3J IMM) Ga 0.51 In 0.49 P/GaAs/In 0.26 Ga 0.74 As solar cells that can overcome these difficulties. Specialized schemes of delineation and undercut etching enable the defect-free release of microscale IMM solar cells and printed assemblies on a glass substrate in a manner that preserves the growth substrate, where efficiencies of 27.3% and 33.9% are demonstrated at simulated AM1.5D one- and 351 sun illumination, respectively. A composite carrier substrate where released IMM microcells are formed in fully functional, print-ready configurations allows high-throughput transfer printing of individual IMM microcells in a programmable spatial layout on versatile choices of module substrate, all desired for CPV applications.

14 SOLAR ENERGY↗
DOE OSTI2023

High Efficiency Multijunction Devices: Solar Cells, Thermophotovoltaics, LEDs

High-efficiency III-V multijunction solar cells require multiple alloys with optimal bandgaps and excellent material quality. However, many useful alloys are lattice-mismatched to available substrates, and require strain-engineering tricks to enable efficient use. To this extent, we have developed low-dislocation density metamorphic material and optically-thick stress-balanced superlattices, enabling access to a wide variety of III-V alloys. Combined with transparent tunnel junctions, these components allow optimizing multijunction devices for a variety of applications. We have designed multijunction cells for the G173G-terrestrial and AM0-space spectra with record 39.5% and 34.2% efficiency, respectively, and also thermophotovoltaic cells for blackbody spectra that reach over 40% TPV-efficiency. Finally, using these PV components, we demonstrate a multijunction LED with high quantum efficiency.

high-efficiency↗
DOE OSTI2019

Enhancing electron diffusion length in narrow-bandgap perovskites for efficient monolithic perovskite tandem solar cells

Developing multijunction perovskite solar cells (PSCs) is an attractive route to boost PSC efficiencies to above the single-junction Shockley-Queisser limit. However, commonly used tin-based narrow-bandgap perovskites have shorter carrier diffusion lengths and lower absorption coefficient than lead-based perovskites, limiting the efficiency of perovskite-perovskite tandem solar cells. In this work, we discover that the charge collection efficiency in tin-based PSCs is limited by a short diffusion length of electrons. Adding 0.03 molar percent of cadmium ions into tin-perovskite precursors reduce the background free hole concentration and electron trap density, yielding a long electron diffusion length of 2.72 ± 0.15 um. It increases the optimized thickness of narrow-bandgap perovskite films to 1000 nm, yielding exceptional stabilized efficiencies of 20.2 and 22.7% for single junction narrow-bandgap PSCs and monolithic perovskite-perovskite tandem cells, respectively. This work provides a promising method to enhance the optoelectronic properties of narrow-bandgap perovskites and unleash the potential of perovskite-perovskite tandem solar cells.

14 SOLAR ENERGY↗
DOE OSTI2019

Highly doped layer for tunnel junctions in solar cells

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta-doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta-doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Fetzer, Christopher M.↗