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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Broadband LWIR and MWIR absorber by trapezoid multilayered grating and SiO{sub 2} hybrid structures

A broadband metamaterial absorber with high absorption simultaneously in mid-wave infrared (MWIR) and long-wave infrared (LWIR) was proposed. In the MWIR, the absorption higher than 0.8 is from 4 to 6.3 µm, while the absorption in the LWIR is from 8.7 and 9.6 µm. The absorber is insensitive to the incident angle. The broadband absorption in the MWIR is due to the slow-light effect of the trapezoid multilayered grating structure. And the broadband absorption in the LWIR is due to the phonon polariton resonant of trapezoid SiO{sub 2} layer. In the broadband high absorption region, the atmosphere is transparent, which may greatly promote the practical application of the absorber in double-color IR imaging, detecting, infrared stealth and thermal emitting.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Uncooled GeSn MWIR Photodetectors Using Fully Relaxed Thin Triple‐Step Buffer

GeSn photodetectors monolithically grown on Ge virtual substrates demonstrate mid-wave infrared (MWIR) detection at room temperature. The lattice mismatch between GeSn and Ge causes dislocations and compressive strain, creating leakage pathways and unwanted indirect band transitions. Designed thin Ge 0.91 Sn 0.09 triple-step buffer layers of ≈175 nm total thickness reduce dislocations and enable full relaxation, showing 100% lattice relaxation and smooth surface roughness of 0.83 nm with shorter auto-correlation length in surface morphology compared to single-step buffers. Ge 1-x Sn x photodetectors (x = 0.09, 0.12, and 0.15) on triple-step buffers with n-i-p configurations achieve lattice strain relaxations of 99%, 88%, and 80%, respectively. Ge 0.91 Sn 0.09 and Ge 0.88 Sn 0.12 show gradual variation in auto-correlation amplitude, while Ge 0.85 Sn 0.15 shows an increase due to lattice mismatch. Shockley–Read–Hall recombination current dominates at low reverse bias due to mismatch-induced dislocations, while band-to-band tunneling current dominates at higher reverse bias due to narrowing bandgap under strong electric fields. Here, the photodetectors show extended spectral response with increasing Sn composition of i-GeSn active layer sandwiched by barriers. Ge 0.88 Sn 0.12 and Ge 0.85 Sn 0.15 exhibit extended wavelength cut-offs of 3.12 and 3.27 µm at room temperature, demonstrating significant potential for silicon-based MWIR applications.

GeSn↗
DOE OSTI2023

Effects of 63 MeV proton irradiation on the performance of MWIR InGaAs/InAsSb nBn photodetectors

An investigation into the effects of 63 MeV proton irradiation on high-sensitivity mid-wave infrared InGaAs/InAsSb nBn devices is performed. Three different structures with various absorber region doping profiles are irradiated and characterized to assess their impact on performance degradation. Minority carrier lifetime is measured using time-resolved photoluminescence and lifetime damage factors are assessed. The majority carrier concentration is determined via capacitance–voltage measurements and dopant introduction rates are calculated. An analysis of dark current density is performed using these material parameters, revealing a reduction in mobility with proton fluence and the emergence of a proton-induced trap energy level. Quantum efficiency is calculated at each proton fluence, and quantum efficiency damage factors show that the graded doping structure exhibits the least reduction of quantum efficiency with dose, attributed to its effective mobility enhancement. Conclusively, detector sensitivity, assessed via shot-noise limited noise-equivalent irradiance, shows that the graded doping structure is the least susceptible to high energy proton irradiation-induced performance degradation.

Physics↗
DOE OSTI2017

Counter Unmanned Aerial Systems Testing: Evaluation of VIS SWIR MWIR and LWIR passive imagers.

This report contains analysis of unmanned aerial systems as imaged by visible, short-wave infrared, mid-wave infrared, and long-wave infrared passive devices. Testing was conducted at the Nevada National Security Site (NNSS) during the week of August 15, 2016. Target images in all spectral bands are shown and contrast versus background is reported. Calculations are performed to determine estimated pixels-on-target for detection and assessment levels, and the number of pixels needed to cover a hemisphere for detection or assessment at defined distances. Background clutter challenges are qualitatively discussed for different spectral bands, and low contrast scenarios are highlighted for long-wave infrared imagers.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

Development of a new approach based on midwave infrared spectroscopy for post-consumer black plastic waste sorting in the recycling industry

Highlights: • MWIR reflectance contact measurements were performed on post-consumer waste. • MWIR absorptions are found to be potentially suitable for black plastic resin classification. • MWIR is also potentially suitable for separation of coloured plastic and wood based products. • Atmospheric transmittance simulations suggest feasibility of stand-off measurements. - Abstract: Waste sorting is key to the process of waste recycling. Exact identification of plastic resin and wood products using Near Infrared (NIR, 1–1.7 µm) sensing is currently in use. Yet, dark targets characterized by low reflectance, such as black plastics, are hard to identify by this method. Following the recent success of Midwave Infrared (MWIR, 3–12 µm) measurements to identify coloured plastic polymers, the aim of this study was to assess whether this technique is applicable to sorting black plastic polymers and wood products. We performed infrared reflectance contact measurements of 234 plastic samples and 29 samples of wood and paper products. Plastic samples included black, coloured and transparent Polyethylene Terephthalate (PET), Polyethylene (PE), Polyvinyl Chloride (PVC), Polypropylene (PP), Polylactic acid (PLA) and Polystyrene (PS). The spectral signatures of the black and coloured plastic samples were compared with clear plastic samples and signatures documented in the literature to identify the polymer spectral features in the presence of coloured material. This information was used to determine the spectral bands that best suit the sorting of black plastic polymers. The main NIR-MWIR absorption features of wood, cardboard and paper were identified as well according to the spectral measurements. Good agreement was found between our measurements and the absorption features documented in the literature. The new approach using MWIR spectral features appears to be useful for black plastics as it overcomes some of the limitations in the NIR region to identify them. The main limitation of this technique for industrial applications is the trade-off between the signal-to-noise ratio of the sensor operating in standoff mode and the speed at which waste is moved under the sensor. This limitation can be resolved by reducing the system’s spectral resolution to 16 cm{sup −1}, which allows for faster spectra acquisition while maintaining a reasonable signal-to-noise ratio.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2021

Colloidal quantum dot based infrared detectors: extending to the mid-infrared and moving from the lab to the field

Quantum dots (QDs) that absorb in the mid-wave infrared (MWIR) regime (3–5 μm) have recently generated significant interest as possible detector materials for MWIR cameras, with promises to reduce materials and device fabrication costs and potentially increase device operating temperatures. However, these materials have been primarily explored in single pixel devices – not multi-pixel cameras – and their current performance lags behind that of commercially available MWIR cameras based on single crystalline materials. To realize the potential of QD MWIR photodetectors with imaging capabilities, improvements are needed in the quality of the MWIR-absorbing QD materials, ligands dictating inter-QD charge transport, ordering of QD films, device architectures, and scalability of these methods to larger areas. With three families of QDs being researched – lead-, silver-, and mercury-based chalcogenides – as well as a multitude of possible capping ligands and film deposition techniques, the experimental phase space for MWIR QDs is vast. Here, we provide a roadmap, considering the pros and cons of various film deposition and ligand exchange techniques, as well as reintroduce lessons learned over years of research on QD film formation. We also extracted and created a database of reported quantum dot photodetectors’ performance and fabrication methods and have developed an interactive data visualization dashboard for this database, which provides researchers in the field a quick snapshot of the existing state of the art. Finally, we outline figures of merit and information that should be presented in papers moving forward which would help to clarify the reported results, as well as offer ideas for future steps. We provide a database visualization of the QD photodetector literature at https://public.tableau.com/app/profile/tom.nakotte/viz/IRQDphotodetectors_16384709473480/Dashboard1#1.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Poly(sulfur-random-(1,3-diisopropenylbenzene)) based mid-wavelength infrared polarizer: Optical property experimental and theoretical analysis

Development of polymer based mid-wavelength infrared (MWIR) optics has been limited mainly due to high optical loss of organic polymers used in general optical components. In this study, a MWIR polarization grating based on a sulfuric polymer poly(sulfur-random-(1,3-diisopropenylbenzene)) with a low loss in the MWIR range was fabricated using a simple two-step process: imprint and metal deposition. Fourier-transform infrared (FTIR) spectroscopy measurement showed that this polymeric MWIR polarizer selectively transmitted the polarized IR in transverse magnetic (TM) mode over the transverse electric (TE) mode at normal incidence. The measured extinction ratios ( η = The ratio of transmissions in TM and TE) were 208, 176, and 212 at the wavelength of 3, 4, and 5 μm, respectively. The computational simulation and analytical model confirmed that the enhanced TM transmission efficiency and η followed a Fabry-Pérot (FP) resonance mode within the created sulfuric polymer film. This polymeric MWIR polarizer demonstrated a great potential for broader applications in IR photonics to realize low-cost and durable optical components.

42 ENGINEERING↗
DOE OSTI2025

Mechanically flexible mid-wave infrared imagers using black phosphorus ink films

The mid-wave infrared (MWIR) spectral range (λ = 3–8 μm) enables important sensing and imaging applications, including non-invasive bioimaging, night vision, and autonomous navigation. Commercial MWIR photodetectors are limited to rigid imagers based on heteroepitaxial materials. There is an emerging need for mechanically flexible MWIR imagers to broaden their functionality and practicality. Recently, photodetectors using van der Waals (vdW) black phosphorus (BP) flakes have demonstrated highly sensitive room-temperature photodetection. Additionally, vdW materials are solution-processable, facilitating scalable processing and flexible device fabrication. In this work, we present flexible MWIR imagers consisting of photodiodes fabricated on thin plastic substrates using BP ink films. We demonstrate mechanically robust responsivity up to 2.5-mm bending radii and after 5000 bending cycles. Leveraging this flexibility, we achieve full-azimuthal imaging, detecting directional light sources with precision. These results establish a scalable approach for large-area, conformable MWIR imaging and pave the way for integration with flexible electronics.

Wijaya, Theodorus Jonathan↗
DOE OSTI2023

Large-scale efficient mid-wave infrared optoelectronics based on black phosphorus ink

The mid-wave infrared (MWIR), ranging from 2 to 5 micrometers, is of substantial interest for chemical sensing, imaging, and spectroscopy. Black phosphorus (bP)–based MWIR light emitters and detectors have been shown to outperform the state-of-the-art for commercial devices due to the low Auger recombination coefficient of bP. However, the scalability of these devices remains a challenge. Here, we report a bP ink formula that preserves the exceptional MWIR optoelectronic properties of bP to deposit centimeter-scale, uniform, and pinhole free films with a photoluminescence quantum yield higher than competing III-V and II-VI semiconductors with similar bandgaps at high excitation regime. As a proof of concept, we use bP ink as a “phosphor” on a red commercial light-emitting diode to demonstrate bright MWIR light emission. We also show that these films can be integrated into heterostructure device architectures with electron and hole selective contacts for direct-injected light emission and detection in MWIR.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Multicolor Inks of Black Phosphorus for Midwave‐Infrared Optoelectronics

Abstract Black phosphorus (bP) based ink with a bulk bandgap of 0.33 eV ( λ = 3.7 µm) has recently been shown to be promising for large‐area, high performance mid‐wave infrared (MWIR) optoelectronics. However, the development of multicolor bP inks expanding across the MWIR wavelength range has been challenging. Here a multicolor ink process based on bP with spectral emission tuned from 0.28 eV ( λ = 4.4 µm) to 0.8 eV ( λ = 1.5 µm) is demonstrated. Specifically, through the reduction of bP particle size distribution (i.e., lateral dimension and thickness), the optical bandgap systematically blueshifts, reaching up to 0.8 eV. Conversely, alloying bP with arsenic (bP 1− x As x ) induces a redshift in the bandgap to 0.28 eV. The ink processed films are passivated with an infrared‐transparent epoxy for stable infrared emission in ambient air. Utilizing these multicolor bP‐based inks as an infrared light source, a gas sensing system is demonstrated that selectively detects gases, such as CO 2 and CH 4 whose absorption band varies around 4.3 and 3.3 µm, respectively. The presented ink formulation sets the stage for the advancement of multiplex MWIR optoelectronics, including spectrometers and spectral imaging using a low‐cost material processing platform.

Kim, Jae Ik↗
DOE OSTI2018

Polarization-resolved black phosphorus [bP] / molybdenum disulfide [MoS 2 ] mid-wave infrared photodiodes with high detectivity at room temperature

Infrared photodetectors are currently subject to a rapidly expanding application space, with an increasing demand for compact, sensitive and inexpensive detectors. Despite continued advancement, technological factors limit the widespread usage of such detectors, specifically, the need for cooling and the high costs associated with processing of III-V/II-VI semiconductors. Here, black phosphorous (bP)/MoS 2 heterojunction photodiodes are explored as mid-wave infrared (MWIR) detectors. Although previous studies have demonstrated photodiodes using bP, here we significantly improve the performance, showing that such devices can be competitive with conventional MWIR photodetectors. By optimizing the device structure and light management, we demonstrate a two-terminal device that achieves room-temperature external quantum efficiencies (ηe) of 35% and specific detectivities (D*) as high as 1.1 × 10 10 cm Hz 1/2 W -1 in the MWIR region. Furthermore, by leveraging the anisotropic optical properties of bP we demonstrate the first bias-selectable polarization-resolved photodetector that operates without the need for external optics.

42 ENGINEERING↗
DOE OSTI2020

Design of High Efficient Mid-Wavelength Infrared Polarizer on ORMOCHALC Polymer

While an organically modified chalcogenide (ORMOCHALC) can be used to fabricate a polymeric mid-wavelength infrared (MWIR) polarizer with competitive extinction ratio compared to the commercial wire-grid polarizers, which are composed of fragile inorganic materials, there is still a knowledge gap regarding the systematic design process to obtain high transmission efficiency and extinction ratio. As such, a computational parameter study for design optimization is conducted with the geometric parameters of the bilayer grating ORMOCHALC polarizer. The computational study shows that the Fabry–Pérot cavity is the primary mechanism that determines the transmission behaviors and the extinction ratio. A bilayer grating design, guided by the parameter study, is realized through the thermal nanoimprint and metal deposition processes. The extinction ratios measured with the Fourier-transform infrared are 245, 304, and 351 at the wavelength of 3, 4, and 5 μm, respectively. Compared to the state-of-the-art of the polymeric MWIR linear polarizers, the extinction ratio is improved by 1.4 times, and the transmission efficiency is increased by 2.5 times. Theoretical analysis with the multiple-layer model based on the transfer matrix method predicts a matched transmission behavior with the experiment and a full-wave electromagnetic simulation.

42 ENGINEERING↗
DOE OSTI2020

Infrared MBE-Grown HgCdTe Focal Plane Arrays and Cameras After High Energy Neutron Irradiation

HgCdTe is one of the most important materials for the fabrication of infrared detectors and focal plane arrays (FPAs) deployed in environments where high-energy particles, such as protons and neutrons, are present. We designed and fabricated HgCdTe-based FPAs that can be used in high neutron radiation environments and we measured their characteristics. The influence of the radiation on the infrared FPAs and cameras is investigated. HgCdTe material and devices are capable of maintaining high performances in a high energy neutron irradiation environment. For MWIR FPA directly facing a $2.59 × 10^8$ n/cm$^2$ s neutron flux beam (with the highest energy 66 MeV) for 1 h, the noise equivalent differential temperature (NEDT) increased ~8 times after irradiation. However, NEDT decreased to 33 mK (compared to the original value of 21 mK) after one warming-up (to room temperature) and cooling-down cycle. The NEDT for the MWIR FPAs mounted parallel to the beam did not degrade (16 mK and 28 mK before irradiation, changed to 18 mK and 26 mK after irradiation, respectively).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Optical characteristics of p-type GaAs-based semiconductors towards applications in photoemission infrared detectors

Free-carrier effects in a p-type semiconductor including the intra-valence-band and inter-valence-band optical transitions are primarily responsible for its optical characteristics in infrared. Attention has been paid to the inter-valence-band transitions for the development of internal photoemission (IPE) mid-wave infrared (MWIR) photodetectors. The hole transition from the heavy-hole (HH) band to the spin-orbit split-off (SO) band has demonstrated potential applications for 3–5 μm detection without the need of cooling. However, the forbidden SO-HH transition at the Γ point (corresponding to a transition energy Δ{sub 0}, which is the split-off gap between the HH and SO bands) creates a sharp drop around 3.6 μm in the spectral response of p-type GaAs/AlGaAs detectors. Here, we report a study on the optical characteristics of p-type GaAs-based semiconductors, including compressively strained InGaAs and GaAsSb, and a dilute magnetic semiconductor, GaMnAs. A model-independent fitting algorithm was used to derive the dielectric function from experimental reflection and transmission spectra. Results show that distinct absorption dip at Δ{sub 0} is observable in p-type InGaAs and GaAsSb, while GaMnAs displays enhanced absorption without degradation around Δ{sub 0}. This implies the promise of using GaMnAs to develop MWIR IPE detectors. Discussions on the optical characteristics correlating with the valence-band structure and free-hole effects are presented.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Unipolar infrared detectors based on InGaAs/InAsSb ternary superlattices

Growth and characteristics of mid-wave infrared (MWIR) InGaAs/InAsSb strained layer superlattice (SLS) detectors are reported. InGaAs/InAsSb SLSs, identified as ternary SLSs, not only provide an extra degree of freedom for superlattice strain compensation but also show enhanced absorption properties compared to InAs/InAsSb SLSs. Utilizing In{sub 1-y}Ga{sub y}As/InAs{sub 0.65}Sb{sub 0.35} ternary SLSs (y = 0, 5, 10, and 20%) designed to have the same bandgap, a set of four unipolar detectors are investigated. These demonstrate an enhancement in the detector quantum efficiency due to the increased absorption coefficient. The detectors exhibit dark current performance within a factor of 10 of Rule 07 at temperatures above 120 K, and external quantum efficiencies in the 15%–25% range. This work demonstrates ternary SLSs are a potential absorber material for future high performance MWIR detectors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗