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At least 19 records

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DOE OSTI2020

Insights into negative differential resistance in MoS 2 Esaki diodes: A first-principles perspective

MoS 2 is a two-dimensional material with a band gap depending on the number of layers and tunable by an external electric field. The experimentally observed intralayer band-to-band tunneling and interlayer band-to-band tunneling in this material present an opportunity for new electronic applications in tunnel field-effect transistors. However, such a widely accepted concept has yet to be been supported by theoretical investigations based on first principles. In this paper, using density functional theory, in conjunction with nonequilibrium Green's function techniques and our electric field gating method, enabled by a large-scale computational approach, we study the relation between band alignment and transmission in planar and side-stack MoS 2 p–i–n junction configurations. Here, we demonstrate the presence of negative differential resistance for both in-plane and interlayer current, a staple characteristic of tunnel diode junctions, and analyze the physical origin of such an effect. Electrostatic potentials, the van der Waals barrier, and a complex band analysis are also examined for a thorough understanding of Esaki diodes.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2020

Achieving Predictive Description of Negative Differential Resistance in Molecular Junctions Using a Range-Separated Hybrid Functional

Not provided.

Science & Technology - Other Topics↗

DOE OSTI2021

Direct observation of negative differential resistance in WS2 homojunction

Vertical tunneling junctions showing negative differential resistance (NDR) are realized in WS2 homojunction devices. Mono-/multilayered single crystalline WS2 is grown using chemical vapor deposition. NDR is observed through resonant tunneling in Au/bi-layer WS2/Au and Pt/few-layered WS2/Au tunneling junctions by back-gating at room temperature. While two-dimensional materials have been a central focus of materials research during the past decade, exploiting novel properties in diverse layers of these materials is emerging with new designs for electronic devices. Our results pave the way for novel resonant tunneling devices presenting a route to fabricate homojunction WS2 with simple fabrication techniques.

Hsu, Bo (ORCID:0000000201714211)↗

DOE OSTI2021

Non-degenerate parametric mixing and Q-enhancement in ALN Lamb wave resonator

In this Letter, we explore a non-degenerate phase independent parametric quality factor (Q)-enhancement technique for aluminum nitride (AlN) Lamb wave resonators. Unlike other active Q-enhancement techniques which require precise phase control of the electronic feedback loop, this technique is implemented by parametrically pumping AlN material stiffness to realize a negative resistance seen at the signal path. The negative resistance is dependent on the nonlinear material modulation and multi-resonance coupling in the device. A nonlinear circuit model is developed to simulate the parametric coupling of each resonance and extract the nonlinearity of AlN from experimental data. With proper pump frequency and pump power, the device quality factor is boosted in both simulation and experiment. The demonstrated Q-enhancement method is simple to implement and can be applied to other types of resonators that have nonlinear behavior and support multi-resonance operation.

42 ENGINEERING↗

DOE OSTI2022

Physics-based compact modeling of electro-thermal memristors: Negative differential resistance, local activity, and non-local dynamical bifurcations

Leon Chua's Local Activity theory quantitatively relates the compact model of an isolated nonlinear circuit element, such as a memristor, to its potential for desired dynamical behaviors when externally coupled to passive elements in a circuit. However, the theory's use has often been limited to potentially unphysical toy models and analyses of small-signal linear circuits containing pseudo-elements (resistors, capacitors, and inductors), which provide little insight into required physical, material, and device properties. Furthermore, the Local Activity concept relies on a local analysis and must be complemented by examining dynamical behavior far away from the steady-states of a circuit. In this work, we review and study a class of generic and extended one-dimensional electro-thermal memristors (i.e., temperature is the sole state variable), re-framing the analysis in terms of physically motivated definitions and visualizations to derive intuitive compact models and simulate their dynamical behavior in terms of experimentally measurable properties, such as electrical and thermal conductance and capacitance and their derivatives with respect to voltage and temperature. Within this unified framework, we connect steady-state phenomena, such as negative differential resistance, and dynamical behaviors, such as instability, oscillations, and bifurcations, through a set of dimensionless nonlinearity parameters. In particular, we reveal that the reactance associated with electro-thermal memristors is the result of a phase shift between oscillating current and voltage induced by the dynamical delay and coupling between the electrical and thermal variables. We thus, demonstrate both the utility and limitations of local analyses to understand non-local dynamical behavior. Critically for future experimentation, the analyses show that external coupling of a memristor to impedances within modern sourcing and measurement instruments can dominate the response of the total circuit, making it impossible to characterize the response of an uncoupled circuit element for which a compact model is desired. However, these effects can be minimized by proper understanding of the Local Activity theory to design and utilize purpose-built instruments.

Brown, Timothy D. (ORCID:0000000347068355)↗

DOE OSTI2024

High-resolution chemical patterns from negative tone resists for the integration of extreme ultraviolet patterns of metal-oxide resists with directed self-assembly of block copolymers

Extreme ultraviolet (EUV) lithography faces significant challenges in designing suitable resist materials that can provide adequate precision, while maintaining economically viable throughput. These challenges in resist materials have led to printing failures and high roughness in EUV patterns, compromising the performance of semiconductor devices. Integrating directed self-assembly (DSA) of block copolymers (BCPs) with EUV lithography offers a promising solution because, while the BCPs register to the EUV-defined chemical guiding pattern, the thermodynamically determined structures of the BCPs automatically rectify defects and roughness in the EUV pattern. Despite the superior resolution of metal-oxide EUV resists (MORs), their application to DSA is limited by the difficulty in converting them into chemical patterns that allow effective transfer of the rectified patterns of DSA films into inorganic materials. To address this challenge, this study introduces a novel strategy for fabricating chemical patterns using hydrogen silsesquioxane (HSQ), a high-resolution negative tone inorganic resist, as a model system for MORs. Initially, a sacrificial Cr pattern is generated from HSQ patterns via reactive ion etching. The sacrificial Cr pattern is converted into a chemical pattern by first grafting a water-soluble polyethylene oxide brush onto the substrate, then wet etching the Cr, and finally grafting nonpolar polystyrene brushes. Assembling polystyrene-block-poly(methyl methacrylate) on these patterns results in structures oriented and registered with the underlying pattern, achieving 24 nm full-pitch resolutions. In conclusion, this approach has the potential to integrate MOR patterns into the DSA process, thereby enabling the generation of high-quality sub-10 nm patterns with high-χ BCPs.

Atomic force microscopy↗

DOE OSTI2020

Ion Number Density Quantification Utilizing Pulsing Frequency in Negative Differential Resistance (NDR) Regime of Microplasma Operation

A mathematical model is presented for quantifying the ion number density over a range of discharge current in microplasma discharges. The ion number density is determined from measured discharge voltage, current, pulsing frequency, and trace impurity that is injected into the system deliberately. Experiments are conducted in pure helium with nitrogen being introduced as the trace species. The ion number density is estimated over a range of discharge current and is compared with multidimensional simulation results.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2023

On the Low Risk of SSR in Type III Wind Turbines Operating in Grid-Forming Control: Preprint

We have shown in a previous work that the risk of sub-synchronous resonance (SSR) between a wind power plant with Type III wind turbines and series-compensated transmission lines is low when the wind turbines in the plant are operated in grid-forming mode, instead of the standard grid-following mode. The fundamental mechanism behind the improved damping characteristics is explained in this paper by modeling the positive and negative sequence impedances of Type III wind turbines for GFM operation mode. It is discovered that the GFM control naturally acts against the negative resistance of Type III wind turbines that results from an interaction between the proportional gain of the rotor-side converter current controller and negative slip. The developed sequence impedance models and improved damping behavior are verified using PSCAD simulations of a 2.5-MW Type III GFM wind turbine. The modeling predictions are also supported by experimentally measuring the sequence impedance response of a 2.5-MW Type III wind turbine during operation in GFL and GFM modes.

grid-following turbine↗

DOE OSTI2024

Negative Differential Resistance in Conical Nanopore Iontronic Memristors

Not Available

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

Transition from retrograde to prograde drift instabilities in a magnetron microdischarge

Rotating plasma structures, or “spokes,” in magnetized discharges characterized by perpendicular electric and magnetic fields have been seen in a growing number of studies and are believed to be the result of gradient-driven drift instabilities. Under certain conditions, we have shown the spoke’s rotation to be opposite to the E B direction, i.e., retrograde in its expected direction. Recently, we have linked such counter-intuitive rotation to a local inversion of the electric field. Here, we give further experimental evidence for this inversion and attempt to provide an explanation for a relatively distinct transition seen between retrograde and positive (prograde) drift. In the experiments, a partially magnetized plasma forms inside a magnetron device of mm radius operated with argon. Discharge current–voltage measurements are acquired for a range of argon fill pressure and inter-electrode spacing. We find two branches of operation—a low current branch of negative resistance, coinciding with the retrograde spoke rotation, and a higher current branch of positive resistance, coincident with prograde spoke rotation. We postulate that at low discharge currents, high magnetic field confinement leads to a large density gradient, causing more electron transport to the anode than that demanded by the external circuit. At higher currents, anomalous axial electron transport (across the magnetic field lines) becomes dominant, eliminating the conditions for field inversion. Here, the current thresholds for the field inversion are found to be sensitive to the argon pressure and inter-electrode spacing.

42 ENGINEERING↗

DOE OSTI2021

Colossal Density-Driven Resistance Response in the Negative Charge Transfer Insulator MnS 2

A reversible density driven insulator to metal to insulator transition in high-spin MnS 2 is experimentally observed, leading with a colossal electrical resistance drop of $10^8$ Omega by 12 GPa. Density functional theory simulations reveal the metallization to be unexpectedly driven by previously unoccupied $S_{2}^{-2}$ $\sigma^{*}_{3p}$ antibonding states crossing the Fermi level. This is a unique variant of the charge transfer insulator to metal transition for negative charge transfer insulators having anions with an unsaturated valence. By 36 GPa the emergence of the low-spin insulating arsenopyrite ($P2_1/c$) is confirmed, and the bulk metallicity is broken with the system returning to an insulative electronic state.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2023

On the Low Risk of SSR in Type III Wind Turbines Operating with Grid-Forming Control

We have shown in previous work that the risk of subsynchronous resonance between wind power plants with Type III wind turbines and series-compensated transmission lines is low when the wind turbines are operated in grid-forming (GFM) mode instead of the standard grid-following mode. This paper explains the fundamental mechanism behind the improved damping characteristics by modeling the positive- and negative-sequence impedances of Type III wind turbines in GFM control mode. Here it is discovered that the GFM control naturally acts against the negative resistance behavior of Type III wind turbines at subsynchronous frequencies that results from an interaction between the rotor-side converter current controller and negative slip. The developed impedance models in the sequence domain and the improved damping behavior are verified using PSCAD simulations of a 2.5-MW Type III GFM wind turbine. The modeling predictions are also supported by experimentally measuring the impedance response of a 2.5-MW Type III wind turbine in GFM mode.

17 WIND ENERGY↗

DOE OSTI2023

On the Low Risk of Subsynchronous Resonance (SSR) in Type III Wind Turbines Operating in Grid-Forming Control

grid-following turbine↗

DOE OSTI2024

Axon-like active signal transmission

Any electrical signal propagating in a metallic conductor loses amplitude due to the natural resistance of the metal. Compensating for such losses presently requires repeatedly breaking the conductor and interposing amplifiers that consume and regenerate the signal. This century-old primitive severely constrains the design and performance of modern interconnect-dense chips. Here we present a fundamentally different primitive based on semi-stable edge of chaos (EOC), a long-theorized but experimentally elusive regime that underlies active (self-amplifying) transmission in biological axons. By electrically accessing the spin crossover in LaCoO 3 , we isolate semi-stable EOC, characterized by small-signal negative resistance and amplification of perturbations. In a metallic line atop a medium biased at EOC, a signal input at one end exits the other end amplified, without passing through a separate amplifying component. While superficially resembling superconductivity, active transmission offers controllably amplified time-varying small-signal propagation at normal temperature and pressure, but requires an electrically energized EOC medium. Operando thermal mapping reveals the mechanism of amplification—bias energy of the EOC medium, instead of fully dissipating as heat, is partly used to amplify signals in the metallic line, thereby enabling spatially continuous active transmission, which could transform the design and performance of complex electronic chips.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2021

Quantifying Negative Effects of Carbon-Binder Networks from Electrochemical Performance of Porous Li-Ion Electrodes

Porous Li-ion electrodes contain active particles, ion transporting electrolyte, and carbon-binder networks. While macrohomogeneous models are often used to predict electrode behavior, accurate predictions remain challenging, owing to the incomplete understanding of the critical role of carbon-binder networks and how they affect the electrochemical response. The present study systematically characterizes these effects in terms of effective properties by utilizing macrohomogeneous models to analyze the measured responses for electrodes with different carbon-binder content, electrode thickness, and porosity but with identical materials. We find that the impact of the carbon-binder network is more severe than previously thought. Even for low carbon-binder content (5 %wt. dry electrode), the presence of the network decreases the reaction area and increases the ion transport resistance, negatively impacting electrode performance. These effects scale with not just porosity or active material volume but also with carbon-binder content. The findings underscore the importance of connecting all effective properties to electrode specifications in a full factorial sense to transform the electrode design paradigm.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Stability enhancement module for grid-following converters: Hardware implementation and validation

Low-frequency oscillations limit power delivery of voltage-source converter interfaced resources, for example, wind and solar, operating in grid-following control mode. Our prior research identified the instability mechanism as the coupling between real power and voltage at point of common coupling. In turn, a stability enhancement control was proposed to weaken the coupling by introducing a simple voltage-based feedback loop. The stability enhancement control has been validated via electromagnetic transient simulation testbeds. The objectives of this paper are (a) to provide a more insightful explanation of the enhancement module by examining the impedance of the grid-following converter and (b) to verify the performance of the stability module using a hardware testbed. The theoretic examination demonstrates that stability enhancement module effectively reduces the negative resistance effect of $Z_{qq}$ and thus boosts stability. The experimental research leads to a hardware testbed of a grid-following converter with the ability of demonstrating low-frequency oscillations. Finally, the experimental results demonstrate the efficacy of the proposed stability enhancement control and the readiness of commercial realization of the stability enhancement unit.

42 ENGINEERING↗

DOE OSTI2023

Coherent fluctuations in a partially magnetized small magnetron discharge operating on molecular nitrogen

We report experimental data on rotating plasma disturbances in a quasi-steady direct-current magnetron discharge operating with molecular nitrogen at pressures of 27, 40, 67, and 133 Pa. Experiments with a segmented anode measuring the local current flow reveal up to 12 coherent structures (“spokes”) propagating in the +E×B and −E×B azimuthal directions. The current–voltage characteristics are studied and found to follow a negative resistance profile at the lower discharge currents. The existence of coherent structures and the number of spokes observed depend on the discharge current and operating pressure. Lower pressures are more favorable to the retrograde −E×B spoke rotation, which is observed in the 27, 40, and 67 Pa discharges. The results are interpreted with a gradient-driven drift wave model, and using the dispersion relation, we show that the propagation direction depends on the orientation of the local electric field within the plasma. Using an electron fluid model, we show how experimental conditions can lead to field reversals that generate −E×B spoke rotation in the lower pressure discharges.

Physics↗

DOE OSTI2023

Impedance Modeling and Stability Analysis for the PLL-less and Voltage Sensor-less Grid-tied Converters

The newly developed control methodology, which omits the phase-locked loop (PLL) and voltage sensor, has garnered considerable attention for its rapid dynamic response and reduced hardware expenses. Nonetheless, its stability concerns have not yet been thoroughly scrutinized. In this paper, the impedance modeling of the PLL-less and voltage sensorless control strategy has been established. The impedance model has been contrasted with the traditional PLL-based control scheme. Our findings demonstrate that the PLL-less and voltage sensorless control approach lacks the negative resistance behavior that is frequently observed in the traditional scheme, which results in unstable operations. Furthermore, the role of virtual resistance has been examined. To substantiate the aforementioned findings, simulation results are presented.

24 POWER TRANSMISSION AND DISTRIBUTION↗