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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Functional Photoresists for Energy Applications. Final Report

Monolithic ultralow-density porous bulk materials have recently attracted much interest due to many emerging applications in the areas of catalysis, energy storage and conversion, and thermal insulation. They are also important components of high energy density (HED) and inertial confinement fusion (ICF) targets. However, despite tremendous progress that has been made in the synthesis of porous materials, deterministic and independent control over microscopic architecture, density and composition remain key issues, and their integration in high precision devices requires cost and time-intensive mechanical machining that not only reduces reproducibility by generating debris but also limits the complexity of the 3D shapes that can be realized. In this project, we overcame these limitations by developing a universal templating capability that provides deterministic and independent control over density, composition, architecture, and macroscopic sample shape. This was achieved by developing the technology to 1) 3D print ultrahigh resolution, ultra-high precision polymeric micro-lattice templates, 2) coat these templates with the desired materials, and 3) removing the template (Fig. 1a). Atomic layer deposition (ALD) provides the atomic scale coating thickness accuracy required for precisely controlling density. While this templating approach had been demonstrated in prior work, limitations in suitable photoresists, 3D print technologies, print design, and template removal techniques did not allow the fabrication of millimeter-sized high-precision parts with sub-micron resolution. To enable this technology, we developed 1) two-photon polymerization (TPP) print designs that enable the fabrication of millimeter-sized, mechanically robust polymeric templates with sub-micron resolution and 2) a continuum level TPP printing simulation capability for additional print design guidance; 3) atomistic models to study photoresist polymerization kinetics and network topography, 4) refractive index matched polymeric and preceramic TPP photoresists, and 5) functional TPP photoresists including porous voxel structures and self-immolative polymer photoresist chemistries; and 6) damage free template removal techniques that enable the fabrication of defect-free high-precision low-density foam components. We also developed a templating approach for pure carbon microlattices with a unique tube-in-tube ligament morphology. As a test platform, we pursued the fabrication of foam liners that promise to further increase the neutron yield in indirect drive ICF experiments by improving implosion symmetry control and coupling between the laser and the deuterium-tritium fuel. This application requires fabrication and integration of a ultra-high precision, millimeter-sized, thin-walled (200-400 micrometer thick), low-density (10-30 mg/cc), high atomic number (high Z) cylindrical foam tube into the gold hohlraum of an indirect drive ICF target (Fig. 1b). While our hohlraum liner test case will mainly find application in HED and ICF experiments, the underlying science will also directly apply to previously developed nanoparticle and additive manufacturing technologies and will advance those techniques as well.

36 MATERIALS SCIENCE↗

High-precision monitoring of outgassing species in model extreme ultraviolet photoresists with a cavity ring-down spectrometer

Background Extreme ultraviolet (EUV) photoresists play a pivotal role in advancing nanopatterning technologies by balancing image quality and sensitivity. The outgassing behavior of photoresist thin films under EUV and deep ultraviolet (DUV) exposure reveals chemical details relevant to their performance. Aim Here, we focus on utilizing an analytical technique not previously used in photolithography, the tabletop cavity ring-down spectrometer, to investigate outgassing dynamics in EUV photoresists, enabling precise chemical identification and deeper insights into resist processing. Approach The spectrometer’s enhanced laser path length (∼ 20 km) and broadband absorption capabilities in the C–H overtone region allow for sensitive and temporally resolved detection of mixtures of outgassed species. Using a model resist comprising a polymer matrix with a photoacid generator and quencher, we analyzed the influence of time delays between exposure and post-exposure bake (PEB) as well as storage under varying environmental conditions. Results Suppression of isobutylene outgassing and thickness loss was observed with extended delays between exposure and PEB, potentially linked to water absorption and acid deactivation. The technique proved highly effective in distinguishing subtle chemical differences between processing stages. Conclusions Delay times and their environmental conditions, particularly humidity, reduce outgassing and thickness loss of photoresists during PEB, suggesting decreased acid-driven deprotection. This can potentially impact sensitivity, defectivity, and roughness of resist patterns, necessitating precise monitoring and control.

Extreme ultraviolet photoresists↗

High precision monitoring of outgassing species in model EUV photoresists with a cavity ring-down spectrometer

Extreme ultraviolet (EUV) photoresists play a pivotal role in advancing nanopatterning technologies by balancing image quality and sensitivity. The outgassing behavior of photoresist thin films under EUV and deep ultraviolet (DUV) exposure reveals chemical details relevant to their performance. This study focuses on utilizing an analytical technique not previously used in photolithography, the tabletop cavity ring-down spectrometer, to investigate outgassing dynamics in EUV photoresists, enabling precise chemical identification and deeper insights into resist processing. The spectrometer’s enhanced laser path length (~20 km) and broadband absorption capabilities in the CH overtone region allow for sensitive and temporally resolved detection of outgassed species. Using a model resist comprising a polymer matrix with a photoacid generator and quencher, we analyzed the influence of time delays between exposure and Post-Exposure Bake (PEB) as well as storage under varying environmental conditions. Suppression of isobutylene outgassing and thickness loss was observed with extended delays between exposure and PEB, potentially linked to water absorption and acid deactivation. The technique proved highly effective in distinguishing subtle chemical differences between processing stages. Delay times and their environmental conditions, particularly humidity, reduce outgassing and thickness loss of photoresists during PEB, suggesting decreased acid-driven deprotection. This can potentially impact sensitivity, defectivity, and roughness of resist patterns, necessitating precise monitoring and control.

Lüttgenau, Bernhard↗

Atomic layer deposition and its derivatives for extreme ultraviolet (EUV) photoresist applications

Solution-processed photoresists have been forerunners in semiconductor patterning for decades. Even with the drastic reduction in photolithography wavelength, traditional spin-on resists still support the fabrication of the most advanced, sub-5 nm node logic and memory devices using EUV lithography (EUVL) (λ = 13.5 nm). However, trade-off between resolution, sensitivity, and roughness in the conventional resists pose a critical challenge in the race towards device downscaling to 1 nm node. While great efforts are being made to improve spin-on EUV photoresist performance, there has been emergence of new approaches focused on developing novel resists via vapor-phase processing routes, such as atomic layer deposition (ALD) and its analogs. This review summarizes recent advances in EUVL photoresist development based on ALD and its derivative techniques, which include ALD-based inorganic–organic dry resists and hybrid resists synthesized by infiltrating conventional spin-on resists. Despite being in the early stage, initial studies have shown the great potential of ALD applications in EUVL photoresist development.

36 MATERIALS SCIENCE↗

Method of making low leakage N-channel SOS transistors utilizing positive photoresist masking techniques

A self-aligned method of implanting the edges of NMOS/SOS transistors is described. The method entails covering the silicon islands with a thick oxide layer, applying a protective photoresist layer over the thick oxide layer, and exposing the photoresist layer from the underside of the sapphire substrate thereby using the island as an exposure mask. Only the photoresist on the islands' edges will be exposed. The exposed photoresist is then removed and the thick oxide is removed from the islands edges which are then implanted.

Policastro, Steven G.↗

Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography

Abstract Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography (EUVL) and addressing associated challenges. One of such challenges is a need for improved EUV photoresists featuring simultaneously high sensitivity, resolution, and etch selectivity. Here, a new, positive‐tone, organic–inorganic hybrid EUV photoresist is demonstrated that delivers a high‐resolution EUVL and electron‐beam lithography (EBL) patterning capability combined with high sensitivity and etch resistance. The new resist, poly(methyl methacrylate) infiltrated with indium oxide (PMMA‐InO x ), is synthesized via vapor‐phase infiltration (VPI), a material hybridization technique derived from atomic layer deposition. The weak binding of the gaseous indium precursor, trimethylindium, to the carbonyl group in PMMA allows the synthesis of hybrids with inorganic content distributed uniformly in the resist, enabling high EUVL and EBL sensitivities (18 mJ cm −2 and 300 µC cm −2 , respectively) and high‐resolution positive‐tone EUVL patterning (e.g., 40 nm half‐pitch line‐space and 50 nm diameter contact hole patterns) with high Si etch selectivity (>30–40). The low exposure doses required to pattern the PMMA‐InO x hybrid resist, high etch resistance, and processing strategies, which are developed, can pave the way for using infiltration‐synthesized hybrid thin films as reliable positive‐tone EUV photoresists for future semiconductor patterning.

36 MATERIALS SCIENCE↗

Comparison of the spatial statistics of random and defined-sequence photoresist films

The resolution-line edge roughness-sensitivity tradeoff has motivated the exploration of potential improvements using defined sequence polymers and polymer-bound photoacid generators and quenchers. We characterize the internal structures of positive tone photoresist polymer films formed from defined sequence polymers and compare them with random copolymers of the same composition. We model their imaging to connect initially to developable film structures. We use a polymer packing algorithm to simulate films of diverse compositions and locations of photoacid generators and quenchers, using the composition of an ESCAP photoresist. We use a simple extreme ultraviolet exposure-deprotection algorithm to model developable image formation within them. In all cases, the spatial distribution of chemical moieties in the film for defined sequence polymers is nearly indistinguishable from random copolymers. We evaluate several exposure-deprotection scenarios and find that a defined sequence copolymer has a distinctive developable image under certain circumstances. The use of defined sequence polymers within a photoresist layer does not automatically result in improved imaging; however, they do have some characteristics different from random polymers of the same composition. Further study of these characteristics may provide a route to improved control over the nanoscale imaging process.

36 MATERIALS SCIENCE↗

Etching method for photoresists or polymers

A method for etching or removing polymers, photoresists, and organic contaminants from a substrate is disclosed. The method includes creating a more reactive gas species by producing a plasma discharge in a reactive gas such as oxygen and contacting the resulting gas species with a sacrificial solid organic material such as polyethylene or polyvinyl fluoride, reproducing a highly reactive gas species, which in turn etches the starting polymer, organic contaminant, or photoresist. The sample to be etched is located away from the plasma glow discharge region so as to avoid damaging the substrate by exposure to high energy particles and electric fields encountered in that region. Greatly increased etching rates are obtained. This method is highly effective for etching polymers such as polyimides and photoresists that are otherwise difficult or slow to etch downstream from an electric discharge in a reactive gas.

Lerner, Narcinda R.↗

Infrared nanospectroscopy characterization of metal oxide photoresists

Implementation of extreme ultraviolet (EUV) lithography in high-volume semiconductor manufacturing requires a reliable and scalable EUV resist platform. A mechanistic understanding of the pros and cons of different EUV resist materials is critically important. However, most material characterization methods with nanometer resolution use an x-ray photon or electron beam as the probe, which often cause damage to the photoresist film during measurement. Here, we illustrated the use of non-destructive infrared nanospectroscopy [or nano-Fourier-Transform infrared spectroscopy (nano-FTIR)] to obtain spatially resolved composition information in patterned photoresist films. Further, clear evidence of exposure-induced chemical modification was observed at a spatial resolution down to 40 nm, well below the diffraction limit of infrared light. With improvements, such a nano-FTIR technique with nanoscale spatial resolution, chemical sensitivity, and minimal radiation damage can be a promising candidate for the fundamental study of material properties relevant to EUV lithography.

36 MATERIALS SCIENCE↗

Initial Stage of Nanoscale Imaging in Positive Tone Extreme UV Photoresists: The Influence of the Polymer Sequence

Photolithographic patterning using extreme ultraviolet (EUV, 92.5 eV) light is a radiolytic process that initially forms electrons, radical cations, anions, and neutral radicals in the polymeric photoresist matrix. These species may participate in the chemical reactions that define the ultimate resolution of the printed image, and their concentrations and nanometer-scale stochastic variations in their formation influence printed image quality. Proposals have been made that polymer chain uniformity may be advantageous in reducing stochastics due to spatial inhomogeneities, and this aspect of radiolysis is examined in this work. We have simulated the initial subpicosecond stages of the imaging process for a series of photoresist films that are identical in composition but vary in their polymer chain structures. We use detailed, physically accurate stochastic reaction-diffusion calculations to evaluate the influence of defined sequence and random copolymer structures on radiolytic spur formation, i.e., a cluster of species formed by electron-polymer interactions that defines the initial spatial characteristic of the imaging process. Predictions of electron thermalization in the present work are shown to be consistent with the literature, indicating that our overall computational approach for ultrafast nanoscale processes is sound. The computational results show that the polymer sequence has no significant effect on the spur composition. This suggests that any potential imaging improvements to be gained by sequence control must originate from postimaging lithographic process steps.

Absorption↗

Chemical and structural characterization of EUV photoresists as a function of depth by standing-wave x-ray photoelectron spectroscopy

The success in the miniaturization of the electronic device constituents depends mostly on the photolithographic techniques. Recently, to achieve patterning at the sub-10-nm node, extreme ultraviolet (EUV) lithography has been introduced into high volume production. Continued scaling of EUV via increased numerical aperture to achieve nodes at 3-nm and below requires the development of fundamentally new patterning materials and new characterization methods. Current EUV-resist film thicknesses are in the 20- to 40-nm range, and further thickness reduction is required for the next generation. Therefore, interfaces become exceedingly important, and the properties of the resist film would be dominated by top and bottom interfacial effects. X-ray photoelectron spectroscopy (XPS) combined with standing-wave excitation (SW-XPS), a fairly new method in the EUV lithography field, previously had been largely applied in multilayers and superlattices for characterizing the composition and electronic structure of buried layers and interfaces as a function of depth. We applied the SW-XPS method to organic/inorganic photoresists to provide depth-selective information on their structural and chemical conditions of as a function of temperature, EUV exposure, different underlayers, and other fundamental parameters. As a first attempt, we perform an SW-XPS feasibility study on self-assembled monolayer (SAM) films after exposure to an electron beam. By SW-XPS, we determined that the interface between the Al 2 O 3 underlayer and the SAMs is smooth, with a mean roughness of about 0.2 nm. Moreover, we determined that the SAM chains are, on average, tilted by 1/430 deg off the sample normal. The SW-XPS results also suggest that the SAM is not a perfectly aligned and uniform monolayer, with some areas having thickness higher than a single monolayer. We demonstrated that SW-XPS can provide useful information on ultrathin materials with high potential for being used as a characterization method of organic/inorganic photoresists.

36 MATERIALS SCIENCE↗

Chemically Amplified, Dry-Develop Poly(aldehyde) Photoresist

The catalytic decomposition of poly(phthalaldehyde) with a photoacid generator can be used as dry-develop photoresist, where the exposed film depolymerizes into small molecules to allow the development of features via controlled vaporization. Higher temperatures enabled shorter dry-development times, but also promoted faster photoacid diffusion that compromised pattern fidelity. Trihexylamine was used as a base quencher to counteract acid diffusion in a phthalaldehyde-propanal co-polymer photoresist. The propanal co-monomer in the polymer improves the vaporization rate because it has a higher vapor pressure than phthalaldehyde. Addition of the base quencher was found to improve the contrast, pattern fidelity, and ease-of-handling of the dry-develop resist in a direct-write UV lithography tool. The dry-development of 4 μ m features was achieved with no appreciable residue. For large area features, a spatially variable exposure method was used to direct the residue away from the exposed area. The gradient exposure method was used to produce 100 μ m features. Plasma etching after dry-development was also used to achieve residue-free dry-developed patterns. These results show the benefits of incorporating base additives into a dry-develop depolymerizable resist system and highlight the need for addressing residue formation.

Materials Science↗

New method for photoresist stripping

Vacuum dehydration of negatively working photoresist eliminates trace contamination of conventional stripping methods. The semiconductor substrate is coated with photoresist, exposed, developed, cured, and etched, and then placed in a vacuum. Following dehydration, the resist film is removable with ordinary solvents.

Davern, W. E.↗

Rapid Dry Etching Of Photoresists Without Toxic Gases

Experimental dry etching technique strips photoresists from semiconductor wafers without damaging semiconductor materials. Makes use of afterglow existing downstream from plasma generated by radio-frequency electric field. Constituents of afterglow react with sacrificial polymer to make reactive gases that quickly etch-away photoresist. Strips quickly at room temperature; not necessary to heat substrates. No hazardous or toxic chemicals used.

Lerner, Narcinda R.↗

Energetic Atoms Would Etch Photoresists Anisotropically

Directed beams of single oxygen atoms having kinetic energies between 1 and 5 eV used in anisotropic etching of oxygen-labile photoresist patterns on silicon wafers. Key step in manufacturing integrated circuits on semiconductor wafers. Damage to semiconductor material under photoresist layer reduced or eliminated. Method incorporated into lithographic processes for fabrication of integrated circuits.

Koontz, Steven↗

Carbon Nanotube Scanning Probe for Surface Profiling of DUV and 193 nm Photoresist Pattern

The continual scaling down of semiconductors to 100 nm and below necessitates a characterization technique to resolve high aspect ratio features in the nanoscale regime. This paper reports the use of atomic force microscope coupled with high aspect ratio multi-walled carbon nanotube scanning probe tip for the purpose of imaging surface profile of photoresists. Multi-walled carbon nanotube tips used in this work are 5-10 nm in diameter and about a micron long. Their exceptional mechanical strength and ability to reversibly buckle enable to resolve steep, deep nanometer-scale features. Images of photoresist patterns generated by 257 nm interference lithography as well as 193 nm lithography are presented to demonstrate multi-walled carbon nanotube scanning probe tip for applications in metrology.

Nguyen, Cattien V.↗

Improved Photoresist Coating for Making CNT Field Emitters

An improved photoresist-coating technique has been developed for use in the fabrication of carbon-nanotube- (CNT) based field emitters is described. The improved photoresist coating technique overcomes what, heretofore, has been a major difficulty in the fabrication process.

Toda, Risaku↗

Freestanding Photoresist Film: A Versatile Template for Three-Dimensional Micro- and Nanofabrication

Ultrathin freestanding films with well-defined micro/nanostructures and robust mechanical properties are applied in many engineering applications including microelectronics, optics, filtration and separation, biomedical engineering, and nanotechnology. Although considerable efforts have been made toward the fabrication of freestanding thin films, it is still a significant challenge to develop a simple and reliable process for producing freestanding films with ultrathin thickness, well-regulated micro/nanopatterns, robust mechanical properties, macroscopic coverage area, and multi-layered composite structures. In this work, a significant advancement is reported in this regard. This study shows a new sacrificial-layer-free (SLF) lifting-off process, integrated with conventional micro- and nanolithography, enabling the release of micro- and nanopatterned photoresist (PR) films from the supporting substrate with unprecedented pattern coverage and structure characteristics. The freestanding PR film is resilient, can withstand significant bending and deformation, and is sufficiently flexible to be transferred onto substrates with 3D topography as a conformal soft stencil for further technological processing and applications. Moreover, the SLF lifting-off process provides a simple approach to prepare single-layered and multi-layered freestanding composite films. The results suggest that the novel SLF lifting-off process can significantly extend the capability of 3D micro-/nanofabrication.

36 MATERIALS SCIENCE↗