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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1976

Interaction of metal layers with polycrystalline Si

Solid-phase reactions of metal films deposited on 0.5-micron-thick polycrystalline layers of Si grown by chemical vapor deposition at 640 C were investigated by MeV He-4 backscattering spectrometry, glancing angle X-ray diffraction, and SEM observations. For the metals Al, Ag, and Au, which form simple eutectics, heat treatment at temperatures below the eutectic results in erosion of the poly-Si layer and growth of Si crystallites in the metal film. Crystallite formation is observed at temperatures exceeding 550 C for Ag, at those exceeding 400 C for Al, and at those exceeding 200 C for Au films. For Pd, Ni, and Cr, heat treatment results in silicide formation. The same initial silicides (Pd2Si, Ni2Si, and CrSi2), are formed at similar temperatures on single-crystal substrates.

Nakamura, K.↗

NASA NTRS1984

Polycrystalline silicon material availability and market pricing outlook for 1980 through 1988

The results of the second JPL update to an original report to assess the availability and prices of polycrystalline Si for solar cells in the 1983-88 interval are reported. It is noted that the demand for poly-Si for solar cells competes with the demand for the same material for semiconductors, although the solar cell industry can use material rejected from the semiconductor industry. A sufficient supply is projected for the 6 yr period, rising from 3224 metric tons to 10,220 metric tons in 1988, with prices dropping from the 1980 level of $140/kg to $25/kg. The price reduction and improved production are noted to be due in large part to DOE efforts at defining lower-cost production processes.

Costogue, E. N.↗

NASA NTRS1995

Silicon Micromachined Sensor for Broadband Vibration Analysis

The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.

Gutierrez, Adolfo↗

NASA NTRS2000

Implementation of Self-Align Local Poly Interconnection on 0.25 Micron Flash Memory

For ETOX Flash technology. the self-aligned source module plays a critical role in minimizing cell size. For advanced Flash technology using the shallow-trench isolation (STI) scheme, however, it is difficult to form a stable source line. The Flash process in this experiment features an ETOX structure and with SIN spacer. Poly-Si (implanted poly) is used as the local interconnection material connecting the source line and was successfully implemented in the ETOX flash array in this paper.

C H Lee↗

NASA NTRS2005

Novel Passivating/Antireflective Coatings for Space Solar Cells

We are developing a novel process to grow passivating/antireflective (AR) coatings for terrestrial and space solar cells. Our approach involves a Room Temperature Wet Chemical Growth (RTWCG) process, which was pioneered, and is under development at SPECMAT, Inc., under a Reimbursable Space Act Agreement with NASA Glenn Research Center. The RTWCG passivating/AR coatings with graded index of refraction are applied in one easy step on finished (bare) cells. The RTWCG coatings grown on planar, textured and porous Si, as well as on poly-Si, CuInSe2, and III-V substrates, show excellent uniformity irrespective of surface topography, crystal orientation, size and shape. In this paper we present some preliminary results of the RTWCG coatings on Si and III-V substrates that show very good potential for use as a passivation/AR coating for space solar cell applications. Compared to coatings grown using conventional techniques, the RTWCG coatings have the potential to reduce reflection losses and improve current collection near the illuminated surface of space solar cells, while reducing the fabrication costs.

Faur, Mircea↗