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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

All sources NASA NTRS DOE OSTI

DOE OSTI2025

A Modified DBC Substrate Improving Thermal Performance for Confined Space Applications

High-power modules use substrates to house the semiconductor device and for electrical insulation. These substrates are constructed with thermally conductive dielectric material sandwiched between two metals to extract heat from semiconductor chips. Thus, the required cooling performance of a power module is linked to the substrate’s thermal performance and can vary based on the substrate technologies. Here, in this study, five substrate technologies were evaluated for space-restricted applications: direct-bonded copper (DBC), an insulated metal substrate (IMS), a thermally annealed pyrolytic graphite (TPG)-based IMS, DBC-based double-sided cooling, and direct-bonded aluminum (DBA) where the heat sink is directly attached without thermal interface materials (TIMs). The finite element (FE) analysis results suggest that the popular DBC substrate has thermal performance better than that of the other substrates for space-constrained applications. To further improve the thermal performance, a modified DBC substrate was proposed where a copper block was added between the semiconductor and the DBC substrate to achieve heat spreading underneath the chip. The modified DBC performance was then compared with the aforementioned substrates and the results showed significant thermal performance improvement. The results were verified with experimental results where the proposed substrate showed 20% more loss handling capability compared to an identical DBC substrate.

42 ENGINEERING↗

DOE OSTI2026

Power Electronic Development Challenges for High Power Density Integrated Electric Drive Applications

The ever-increasing demand for compact, efficient, and high-performance traction drive systems for transportation applications has accelerated the development of integrated electric drives. In these systems, the electric machine and inverter are integrated within a single housing, offering significant advantages in electrical performance, volume, weight, cost, and overall system efficiency. Despite these benefits, such high levels of integration introduce a new set of challenges, particularly in power electronic design and component selection. This article presents an in-depth investigation of a highly integrated electric drive architecture with an internal stator-mounted inverter, highlighting key design considerations and trade-offs aimed exclusively at maximizing system power density.Based on a comprehensive review of the literature, the power density of a voltage-source-inverter-driven electric drive is primarily governed by the volumetric contributions of the power modules, heat sinks, and DC-link capacitors. Accordingly, this work focuses on the optimization of these three critical components to enhance the inverter's overall power density. The proposed design achieves a power density of 100 kW/L, demonstrating the effectiveness of the presented approach for next-generation integrated electric drive systems.

33 ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2025

Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate

The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.

42 ENGINEERING↗

NASA NTRS1995

Deposition of diamond-like films by ECR microwave plasma

Hard amorphous hydrogenated carbon, diamond-like films are deposited using an electron cyclotron resonance microwave plasma with a separate radio frequency power bias applied to a substrate stage. The electron cyclotron resonance microwave plasma yields low deposition pressure and creates ion species otherwise unavailable. A magnetic mirror configuration extracts special ion species from a plasma chamber. Different levels of the radio frequency power bias accelerate the ion species of the ECR plasma impinging on a substrate to form different diamond-like films. During the deposition process, a sample stage is maintained at an ambient temperature of less than 100.degree. C. No external heating is applied to the sample stage. The deposition process enables diamond-like films to be deposited on heat-sensitive substrates.

Shing, Yuh-Han↗

NASA NTRS1996

AIN-Coated Al(2)O(3) Substrates For Electronic Circuits

Type of improved ceramic substrate for high-frequency, high-power electronic circuits combines relatively high thermal conductivity of aluminum nitride with surface smoothness of alumina. Consists of 15-micrometer layer of AIN deposited on highly polished alumina. Used for packaging millimeter-wave gallium arsenide transmitter chips, power silicon chips, and like.

Kolawa, Elzbieta↗

DOE OSTI2026

Power Electronics Module with Integrated Ceramic Heat Exchanger

NREL, in partnership with Synteris and Packet Digital, has developed a 3D-printable ceramic package for power electronic modules to improve their thermal management, power density, performance, and lifetime. Existing power modules contain flat ceramic substrates that serve as both the electrically insulating component and thermal conductor that transfer the large heat outputs of these devices. The team has developed an additive manufacturing process that replaces the traditional insulating metalized substrate, substrate attach, and baseplate/heat exchanger with an additively-manufactured ceramic packaging that acts as both an electrical insulator and heat exchanger for better thermal management. The design, manufacturability, and function of this power module will be discussed.

25 ENERGY STORAGE↗

NASA NTRS2007

Thin, nearly wireless adaptive optical device

A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Knowles, Gareth↗

NASA NTRS2008

Thin, nearly wireless adaptive optical device

Knowles, Gareth↗

NASA NTRS2009

Thin nearly wireless adaptive optical device

A thin nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Knowles, Gareth J.↗

DOE OSTI2026

Tunable Multisite Proton-Coupled Electron Transfer Mediators: Distinct Pathways for Substrate Reduction Versus Competing Hydrogen Evolution

Proton-coupled electron transfer (PCET) reagents have emerged as powerful tools for transferring net H atoms to organic substrates from relatively weak X–H bonds. One advantage of employing PCET reagents is the tunability of the X–H bond strength by independently varying their redox potential and/or p K a for selective substrate reductions; however, the rational development of modular catalytic PCET reagents based on these features remains underdeveloped. In this work, we address important mechanistic questions relevant to a dimethylaniline-appended cobaltocene PCET mediator that our lab has previously introduced. Specifically, we examine where protonation occurs within the reactive Co(II, NH) + intermediate of a Brønsted-base modified cobaltocene mediator, whether substrate reduction and hydrogen evolution reaction (HER) proceed by a common or bifurcated mechanistic pathway, and how the redox, acid–base, and structural properties of PCET mediators can dictate their reactivity and selectivity. We show that substrate compatibility can be tuned and, via a model study with N -aryl imine substrates, provide data pointing to a multisite PCET (MS-PCET) pathway. Moreover, we rigorously characterize the site of protonation in the reactive reduced, protonated form of the mediator, and through kinetic analysis establish that the pathway for undesired competing HER is fundamentally different and involves Cp-ring protonation. Our findings point to a high degree of flexibility in the design of reductive PCET mediators.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2015

CarbAl Heat Transfer Material

The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.

Fink, Richard↗

DOE OSTI2026

Performance of Heterostructural TaC/AlGaN Schottky Diodes Based on First Principles Electronic Structure Properties

Advances in ultra-wide bandgap materials, such as high Al-content AlxGa1-xN (AlGaN), are essential for next generation power electronics, but the requirement for lattice matched substrates is currently a significant obstacle. Recently, conductive TaC has emerged as a promising virtual substrate for AlGaN heteroepitaxy, with wurtzite (0001) AlxGa1-xN lattice-matched to rocksalt (111) TaC at x ~ 0.5. Thus, understanding and controlling the electronic properties of the TaC/AlGaN interface is key for developing technological applications based on TaC/AlGaN devices. Using density functional theory and electronic structure calculations, we here investigate TaC/Al0.5Ga0.5N interfaces, where we include explicit alloy models in the slab calculations. We predict the Schottky barrier height and the electric field discontinuity resulting from interface charges. Considering all possible combinations of (Ta, C) substrate termination, (Al/Ga, N) nucleation, and (Al/Ga, N) polarity, we construct a chemical potential phase diagram to identify the stable interfaces that can be accessed through variation of the synthesis conditions. The predicted interface electronic properties are implemented in device performance simulations to demonstrate a practical design for a strain-free, high-efficiency TaC/AlGaN Schottky diode with a low barrier height and without interface charges, underscoring the potential of TaC as a substrate for ultra-wide bandgap devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2026

Epitaxy of Beta-Ga2O3 on Highly-Offcut (Greater than 10 Degrees) Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction.1 These films show step-flow growth from (-201) step-edges and high electron mobility. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (4.8 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe 100% reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗

NASA NTRS2017

Elastomeric Sensing of Pressure with Liquid Metal and Wireless Inductive Coupling

This project describes resistance-based soft sensors filled with liquid metal, which permit measurements of large strains (0 percent to 110 percent), associated with small forces of less than 30 Newtons. This work also demonstrates a methodology for wireless transfer of these strain measurements without connected electrodes. These sensors allow intermittent detection of pressure on soft membranes with low force. Adapting these sensors for passive wireless pressure sensing will eliminate the need for embedded batteries, and will allow the sensors to transmit pressure data through non-conductive materials including glass and acrylic. The absence of batteries allows us to embed these sensors into materials for long-term use because the sensors only use passive analog circuit elements. We found the oxidation of the liquid metal (eutectic gallium indium) plays a role in the repeatability of the soft sensors. We investigated how the oxidation layer affected the behavior of the sensor by encapsulating materials (silicone, fluorosilicone, and PVC) with varied permeabilities to oxygen. We measured the effects of mechanical loading on the oxidation layer and the effects of wireless inductive coupling on the oxidation layer. We concluded our research by investigating the effects of embedding self-resonant circuits into polydimethylsiloxane (PDMS). Efforts to design engineered systems with soft materials are a growing field with progress in soft robotics, epidermal electronics, and wearable electronics. In the field of soft robotics, PDMS-based grippers are capable of picking up delicate objects because their form-fitting properties allow them to conform to the shape of objects more easily than conventional robotic grippers. Epidermal devices also use PDMS as a substrate to hold electronic components such as radios, sensors, and power supply circuits. Additionally, PDMS-based soft sensors can monitor human motion with liquid metal embedded within micro-channels. Passive wireless sensors have applications in structural health monitoring and medical health monitoring. Doctors can take wireless blood pressure measurements inside arteries to monitor the progression of heart disease. Glaucoma patients can use this technology to monitor the pressure in their eyes to track the progression of the disease.

Dick, Jacob↗

NASA NTRS2002

Microfabricated thermoelectric power-generation devices

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Fleurial, Jean-Pierre↗

NASA NTRS2004

Microfabricated thermoelectric power-generation devices

Fleurial, Jean-Pierre↗

NASA NTRS1999

Nondestructive Detection of Cracks in Ceramics Using Vicinal Illumination

Cracks and other defects in ceramic materials can be difficult or impossible to examine and photograph due to the extreme lack of contrast. A method for inspecting translucent ceramics using scattered light, also known as vicinal illumination, will be described. This method has been known in the ceramics industry for quite some time, but is not well known in the testing and failure analysis community. Electronics applications include substrates, packages, multilayer capacitors, and thin film resistors. Ceramic materials are used in electronic applications as microcircuit packages and substrates which carry signals and power between microcircuits. Fine cracks in ceramic materials can result in mechanical failures, electrical failures, and loss of hermeticity. Often, fine cracks are difficult or impossible to detect using standard nondestructive inspection techniques such as visual inspection, ultrasonic inspection, or vapor crack detection. Dye penetrant inspection is usually effective, but contaminates the part, which is unacceptable for space flight hardware. One effective nondestructive inspection method of detecting cracks involves examining the way in which light scatters through the ceramic material when viewed with a standard bright field reflected light microscope. This method, termed vicinal illumination, has been used for detecting cracks during failure analyses of several part types, and screening of space flight hardware. The technique has proven effective on several different types of ceramic materials as well. A related method for use with dark field equipment has also been used to successfully locate otherwise invisible cracks.

Hull, Scott M.↗