VTO AMR - NEXT-DRIVE Task 1: Power Semiconductor Devices
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Binder, Andrew [Sandia National Laboratories (SNL-↗
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MLSPICE: Machine Learning based SPICE Modeling Platform for Power Magnetics
Electrical power converters are critical to a wide range of applications ranging from renewable integration to transportation electrification, and can be a key factor determining the size, weight, and efficiency of energy conversion systems. Magnetic components are typically the largest and least efficient components in power electronics. While there have been major strides in the modeling and analysis of power semiconductor devices and circuit simulations, the necessary advances in the design of power magnetics have lagged. In this project, we have transformed the modeling and design of power magnetics with machine learning enabled methods and catalyze simultaneous disruptive improvements for ML-based power electronics design tools. A fully automated open-source machine learning based magnetics modeling platform – the MagNet project - with innovations in full stack have been developed to greatly accelerate the design process and provide new insights to magnetic material and geometry design. The ARPA-E funded MagNet platform contains three major building blocks: 1) a ML-Integrated Data Acquisition System (MIDAS): a highly automated data acquisition testbed which is capable of measuring a large number of magnetic cores with a wide range of electrical circuit excitations; 2) a ML-integrated Core Loss Model (MICLM): a machine-learning trained modeling method for modeling the core loss and saturation effects of magnetic materials for arbitrary excitation waveforms; 3) ML-guided Magnetics SPICE Simulation Tool (PMSPICE): a fully integrated CAD tool which can simulate the magnetics in SPICE. It can help the designers to quickly model the linear and non-linear characteristics of magnetic components and evaluate their behavior in SPICE simulations. The developed MagNet system has fully demonstrated the proposed performance target and has been open sourced to the entire power electronics community to advance the modeling and design of power magnetics from many different angles.
36 MATERIALS SCIENCE↗
Wide-Bandgap Semiconductor Amplifiers for Fusion Plasma Heating and Control
This paper discusses power electronics developed under the ARPA-E GAMOW program to support nuclear fusion power production. The goal of this project was to develop and assess the potential for wide-bandgap (WBG) semiconductor devices in power electronics to enable high-efficiency and high-voltage solid-state systems for fusion plasma generation, heating, and control. The power electronics use an architecture in which multiple high-power boards can be combined to produce megawatt-level power, where using multiple boards provides high reliability. Two main areas of power electronics boards are developed in this project for fusion plasma heating and control applications: (1) pulse generation and control and (2) radiofrequency generation. The first area is for boards capable of driving high-voltage millisecond pulses at high duty cycles. The envisioned application of these pulses is in plasma control of magnetohydrodynamic instabilities, plasma position, and edge-localized modes. Pulse-width modulation allows for the implementation of a wide variety of linear and nonlinear control systems. The boards developed for this project could actuate control coils based on digital input signals and can be parallelized to provide megawatts of output power. The design of the pulse generator is a low-side load switch. A load switch was designed and constructed that utilized 2-kV-rated field-effect transistor (FET)-based cascodes developed by Qorvo under this project to perform initial testing of these cascodes. The second area is being implemented using class E amplifiers with WBG devices and a reactance steering network to handle inductive or capacitive plasma loads. Applications include ion cyclotron resonance heating (ICRH) and high-harmonic fast-wave (HHFW) heating. A class E reactance steering network is demonstrated in modeling and experiment with a resistive-inductive load that models an inductively-coupled plasma. Power combining of boards with class E reactance steering networks is also simulated and demonstrated experimentally, to enable scaling up to high power. Modeling of high-power-density cooling and remaining useful life is conducted to enable reliable, effectively cooled high-power electronics for fusion applications.
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
Enhancement-Mode GaN Monolithic Bidirectional Switch With Breakdown Voltage Over 3.3 kV
Here, this work demonstrates a GaN enhancement-mode monolithic bidirectional switch (MBDS) with breakdown voltage (BV) higher than 3.3 kV in both polarities. This MBDS is realized on a dual p-GaN gate high electron mobility transistor (HEMT) platform on sapphire substrate. It features a novel dual junction termination extension design for electric field management, which is built on the p-GaN layer in the gate stack and does not require epitaxial regrowth. The GaN MBDS exhibits symmetric on-state characteristics in both directions with a threshold voltage (V th ) of 0.6 V and a low specific on-resistance (R on,sp ) of 5.6 m Ω · cm2. This device presents the highest BV, as well as one of the best BV and R on,sp trade-offs, in all the reported MBDS devices. The R on,sp is lower than the performance limit of conventional BDS realized by two discrete devices. This 3.3 kV GaN MBDS opens the door for developing new circuit topologies and advancing system performance in medium-voltage power electronics.
42 ENGINEERING↗
Implanted Guard Ring Edge Termination With Avalanche Capability for Vertical GaN Devices
Edge termination is the key building block in power devices to enable near-ideal, avalanche breakdown voltage (BV). Here, this work presents the design, fabrication, and physics of a GaN guard ring (GR) edge termination formed by selective-area nitrogen implantation through an epitaxial p-GaN layer. The fabrication of this termination only includes a single implantation step that does not require precise control of implant depth, rendering a large process latitude. The selective-area implantation produces p-GaN rings that are separated by the implanted, semi-insulating regions. The number and spacing of the p-type rings are found to determine the BV of the vertical GaN p-n diode. The 16-ring structure enables a BV of 1800 V, being 88% of the theoretical 1-D parallel-plane limit. Avalanche characteristics are observed in devices with a large variety of GR designs. Finally, we present a comprehensive survey on the efficiency, fabrication complexity, real estate, and avalanche capability of various edge termination techniques that have been reported in vertical GaN devices. The high efficiency (among the highest reported in avalanche-capable GaN terminations), simple and robust fabrication process, and uniform avalanche capability make this implanted GR a promising edge termination for high-voltage GaN devices.
42 ENGINEERING↗
From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices
Abstract Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga 2 O 3 . For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.
Materials Science↗
T-Type Modular DC Circuit Breaker (T-Breaker) for Future DC Networks
The developed T-Type Modular DC Circuit Breaker (T-Breaker) technology offers an all-in-one solution to challenges in DC networks. This includes swift fault detection and protection, power transient stability, and power quality improvement, achieved through the utilization of wide bandgap (WBG) power semiconductors and energy storage devices. The T-Breaker not only facilitates rapid fault current detection and interruption but also implements fault current limiting through active insertion of storage devices or by operating WBG devices in the saturation region. Additionally, with the assistance of energy storage devices, potential overvoltage issues on power devices induced by control signal misalignment can be mitigated. The T-Breaker can be regulated to perform shunt current injection/absorption using the vertical arm and series voltage insertion via the horizontal arm, thereby enhancing DC system stability during voltage or load power fluctuation transients. The OSU team and Raytheon team actively worked together on designing, fabricating, assembling, and testing of two T-Breaker prototypes. The first prototype is rated at 1 kV, 500 A with half-bridge (unipolar) structure to validate the T-Breaker concept. The second prototype is rated at 20 kV, 50 A with full-bridge (bipolar) topology which can reach an efficiency of 99.977%, realize a power density of 60.2 MW/m3, and eliminate the 500-A fault current with a fault response time of around 20 µs. The prototypes show great feasibility of adopting this technology in multiple applications including electrified aircraft, super charging stations, data centers, etc.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Unified Universal Control and Coordination of Inverter-Based Resources, and Validation for a PV + Battery Hybrid Plant
As renewable energy deployment grows, hybrid power plants (HPPs) combining photovoltaic (PV) and battery systems must evolve to offer both energy and grid stability services. These systems typically include a mix of grid-following (GFL) and grid-forming (GFM) inverters, presenting unique coordination and control challenges. This Department of Energy–funded project developed and validated a Unified Universal Control and Coordination (UUCC) framework for such PV + battery hybrid plants, enabling seamless and stable operation, including ultrafast black start, autonomous synchronization, and robust frequency and voltage regulation, under different grid conditions. The project significantly advanced the understanding of inverter-based resource (IBR) control by developing and validating three complementary system-level approaches for hybrid GFL/GFM operation: 1. A combined Virtual Resistance (VR)-based GFL and Virtual Oscillator Control (VOC)-based GFM method, where each inverter type is governed by a specialized control strategy. Together, these achieve stable, fast-response coordination, eliminating inrush current and enabling smooth black start and grid synchronization across a wide range of grid strengths. 2. A Deadbeat-based UUCC strategy, which uses discrete-time, switching-cycle-level control for both GFL and GFM inverters. This approach replaces traditional PI/PLL control with a control parameter-free, high-bandwidth framework that supports stable LVRT and instantaneous synchronization under all conditions. 3. A benchmark comparison with Siemens’ commercial GFM microgrid controller, which provided a fast baseline platform. The commercial approach decoupled v & f control was implemented on a commercial microgrid controller.The baseline commercial benchmark helped highlight superior transient response and black start performance offered by the deadbeat and VOC approaches. These technical contributions offer substantial improvements over conventional inverter control schemes, which often rely on slow phase-locked loop (PLL)-based synchronization, require careful control parameters tuning, and prone to unstable in weak grids with GFL inverters and in stiff grid with GFM inverters therefore challenging for hybrid GFL+GFM under all grid conditions. The deadbeat-based UUCC framework enables simpler, faster, and more robust operation of hybrid IBR systems using wide-bandgap (WBG) devices such as SiC power semiconductors. The rapid expansion of hybrid distributed energy resources (DERs), including residential and commercial PV-BESS installations such as Tesla Powerwall, PV with vehicle-to-grid (V2G) capability, and other integrated configurations, presents complex operational challenges for medium-voltage radial distribution feeders. These networks are subject to frequent disturbances such as faults, switching operations, rapid reclosing sequences, and feeder reconfigurations, all of which introduce dynamic stress on IBRs. In addition, planned feeder segmentation and deliberate islanding for resilience will require DERs that can autonomously perform blackstart, establish voltage and frequency references, and resynchronize with the main grid. The advanced deadbeat-based UUCC control and blackstart functionalities developed in this project directly address these requirements, enabling decentralized and autonomous operation of inverter-dominated DERs in distribution systems under a wide range of fault and reconfiguration scenarios. From a public benefit perspective, these innovations enable more reliable and cost-effective integration of renewable energy into distribution networks. The ability to autonomously black start and stabilize grids under varying grid conditions support accelerates recovery from outages and support decentralized resilient energy systems. By reducing system complexity and improving performance, this project lays critical groundwork for future inverter-dominated power grids that are clean, reliable, and accessible to all.
14 SOLAR ENERGY↗
Electrification: 2023 Final Progress Report
This project proposes to develop a high-power density, high speed traction motor architecture called QMag, driven by a high-power density motor drive inverter using silicon carbide semiconductor devices. This new architecture will achieve the efficiency and power density targets by means of innovative winding and rotor structures, high bandwidth controls, and advanced thermal management solutions. The project team will pursue the goals of the project systematically, through Finite Element Analysis for machine design, through simulation and co-simulation techniques for power electronics and controls evaluation, and finally system design, fabrication, testing and evaluation. If this project successfully achieves and demonstrates the DOE targets for power density, cost, and reliability, the technology has the potential to become a core enabler of the flagship higher power product portfolio in commercial traction businesses, which has so far been confined to DC, induction, Brush Less DC (BLDC), Permanent Magnet AC (PMAC), and reluctance machines.
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
Automated Algorithms for Screening Electronic Parts for Aging using Power Spectra Analysis (PSA) Data
Understanding the age of semiconductor parts being built into devices and systems is of interest for manufacturing quality control. Power spectrum analysis (PSA) is a fast, non-destructive, sensitive method for examining semiconductor parts. This talk will cover the use of multivariate analysis on both PSA data and conventional current-voltage data generated prior to PSA analysis to create algorithms that can be automated to screen semiconductor parts for aging.
Multari, Rosalie A↗
Probing and controlling oxygen impurity diffusion in h -BN semi-bulk crystals
Combining its unique features of ultrawide bandgap (UWBG) and two-dimensional nature, h-BN has been explored for emerging applications such as deep ultraviolet optoelectronic devices and single photon emitters. One of the unusual applications of h-BN is for solid-state neutron detectors by utilizing the property of high thermal neutron capture cross section of B-10 as well as its UWBG properties. Although a record high detection efficiency of 59% has been attained by h-BN detectors, the understanding/minimization of defects and impurities is still needed to further advance the h-BN material and detector technologies. We report metal organic chemical vapor deposition growth and oxygen (O) impurity diffusion in thick h-BN. The diffusion coefficient (D) of O impurities has been measured via the evolution of an oxygen related emission with the etching depth, providing a value of D of ∼ 2 × 10−13 cm2/s at 1450 °C and supporting the interpretation that oxygen in h-BN is a substitutional donor. A multiple-buffer-layer approach was employed to mitigate to a certain degree the issue of oxygen diffusion from sapphire substrate during growth. It was demonstrated that the performance of h-BN neutron detectors fabricated from the wafer incorporating multiple buffer layers was significantly improved, as manifested by the enhanced thermal neutron detection efficiency. The advancement of the crystal growth technology of h-BN semi-bulk crystals creates applications in optoelectronic and power electronic devices utilizing the UWBG semiconductor properties of h-BN, while high efficiency h-BN neutron detectors have the potential to supplant the traditional He-3 gas detectors in various application areas by offering the obvious advantages of UWBG semiconductor technologies.
Physics↗
Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Intercell Power Transformer for Power Balancing of Polyphase Wireless Power Transfer Systems
Polyphase wireless power transfer (PWPT) systems experience receiver side imbalances in misaligned conditions. This paper proposes a method for power balancing in PWPT systems, specifically addressing the challenges caused by receivers coil unequal coupling. An intercell power transformer (IPT) is introduced at the receiver side to mitigate the effects of coil mismatch. Simulations of the PWPT system incorporating IPT demonstrate its effectiveness in enhancing power distribution. For voltage-fed rectifiers (VFR), the IPT increases the conduction angle, resulting in higher output power. In current- fed rectifiers (CFR), the IPT promotes uniform power sharing among rectifiers, thereby reducing electrical stress on semiconductor devices and passive components. Simulation results indicate that, under coil misalignment, the IPT improves output power by approximately 49% for VFRs and 44% for CFRs compared to conventional PWPT systems without IPT.
Wojda, Rafal [ORNL] (ORCID:0000000286609268)↗
Power Electronic Substrates for Space Restricted Application
High-power modules use substrates to house the semiconductor device and for electrical insulation. These substrates are constructed with thermally conductive dielectric material sandwiched between two metals to extract heat from semiconductor chips. Thus, the required cooling performance of a power module is linked to the substrate’s thermal performance and can vary based on the substrate technologies. In this study, four substrate technologies were evaluated for space-restricted applications: direct-bonded copper, an insulated metal substrate, a thermally annealed pyrolytic graphite–based insulated metal substrate, and direct-bonded aluminum, where the heat sink is directly attached without thermal interface materials. The finite element results suggest that the popular direct-bonded copper substrate has better thermal performance than the rest of the substrates for space-restricted applications. Furthermore, a modified direct-bonded copper is proposed to further improve thermal performance. The evaluation results show that the modified substrate can handle 30% more losses than its traditional counterpart.
Chowdhury, Shajjad↗
A Modified DBC Substrate Improving Thermal Performance for Confined Space Applications
High-power modules use substrates to house the semiconductor device and for electrical insulation. These substrates are constructed with thermally conductive dielectric material sandwiched between two metals to extract heat from semiconductor chips. Thus, the required cooling performance of a power module is linked to the substrate’s thermal performance and can vary based on the substrate technologies. Here, in this study, five substrate technologies were evaluated for space-restricted applications: direct-bonded copper (DBC), an insulated metal substrate (IMS), a thermally annealed pyrolytic graphite (TPG)-based IMS, DBC-based double-sided cooling, and direct-bonded aluminum (DBA) where the heat sink is directly attached without thermal interface materials (TIMs). The finite element (FE) analysis results suggest that the popular DBC substrate has thermal performance better than that of the other substrates for space-constrained applications. To further improve the thermal performance, a modified DBC substrate was proposed where a copper block was added between the semiconductor and the DBC substrate to achieve heat spreading underneath the chip. The modified DBC performance was then compared with the aforementioned substrates and the results showed significant thermal performance improvement. The results were verified with experimental results where the proposed substrate showed 20% more loss handling capability compared to an identical DBC substrate.
42 ENGINEERING↗
Power Electronics Thermal Management
The 2017 Electrical and Electronics Technical Team Roadmap [1] proposes aggressive research and development targets aimed at improving power electronics technology to enable the mass-market penetration of electric-drive vehicles. Achieving these aggressive targets will require a decrease in cost (year 2025 cost target: $2.70/kW) and an increase in power density (year 2025 power density target: 100 kW/L) as compared with current on-road technology. Replacing traditional silicon device-based components with more efficient and higher-temperature wide-bandgap (WBG) semiconductor device-based components will enable increased power density. However, meeting the power density target will also require innovative thermal management solutions to increase the heat fluxes dissipated and allow for compact electronics packaging.
ADVANCED PROPULSION SYSTEMS↗
Power Electronics Thermal Management
The 2017 Electrical and Electronics Technical Team Roadmap [11] proposes aggressive research and development targets aimed at improving power electronics technology to enable the mass-market penetration of electric-drive vehicles. Achieving these aggressive targets will require a decrease in cost (year 2025 cost target: $2.70/kW) and an increase in power density (year 2025 power density target: 100 kW/L) as compared with current on-road technology. Replacing traditional silicon device-based components with more efficient and higher-temperature wide-bandgap (WBG) semiconductor device-based components will enable increased power density. However, meeting the power density target will also require innovative thermal management solutions to increase the heat fluxes dissipated and allow for compact electronics packaging. This project evaluates, designs, and develops thermal management strategies that use dielectric fluid (single-phase heat transfer) as coolants.
ADVANCED PROPULSION SYSTEMS↗
Evaluation of Converter Performance Considering Static and Dynamic Device Part-to-Part Variability
This paper presents a methodology to incorporate and analyze the impact of semiconductor device part-to-part variation on power converter performance. By integrating extensive static and dynamic device characterization data with an automated compact model generation process that reflects manufacturing variability, device models with inherent variability features are utilized in converter simulations for a comprehensive assessment of performance impacts. The traditional converter performance evaluation process typically yields fixed efficiency values, often dismissing the inherent part-to-part variability caused by the manufacturing process of semiconductor devices. To address this limitation, a large population of devices was characterized to capture variations in static parameters-such as transfer, output, and capacitance characteristics-as well as dynamic behaviors, including switching losses. This data-driven approach enables the development of individual compact models, which were then integrated into converter simulations to evaluate efficiency ranges rather than single point estimated values. The converter simulation results show that part-to-part component variation can lead to significant efficiency deviations, exceeding several percentage points in high-power conversion applications. By offering a more accurate representation of converter behavior under real-world manufacturing conditions, this methodology enables designers to anticipate performance variability, improving the robustness of power converter designs.
device characterization↗