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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Design and Performance of the Solid-State Laser Trigger System for HERMES III

The HERMES III accelerator is an 18-20 MeV linear induction accelerator constructed at Sandia National Laboratories in the late 1980s and which continues operation to this day. As part of recent modernization efforts, the laser triggering system on the accelerator has been replaced with a newly designed solid-state system. This system consists of ten Nd:YAG lasers, each having a nominal output energy of 40-45 mJ at a wavelength of 266 nm. The beam from each laser is split such that it triggers two of the Rimfire gas switches on the accelerator. Compared to the previous laser triggering system, this arrangement makes it possible to more readily tailor the final output pulse shape, and overall reliability for the accelerator's operation with these new lasers has increased. The design of this new laser triggering system is presented in this paper, along with details pertaining to the energy budgeting, optical beam paths, and electrical triggering of the lasers. Initial operational data from the HERMES III accelerator using this new triggering system is also presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Ultra-high-power plasma switch INPIS for pulse power systems

A novel plasma switch, the inverse pinch switch (IN-PIS), with a combination geometry based on an inverse-pinch mechanism, has been tested and shown to alleviate the shortcomings of conventional spark gaps. The INPIS switch or INPIStron is currently being upscaled for high-voltage (approximately 1 MV) operation with a multigap arrangement similar to Sandia's rimfire electrodes used for ultra-high-voltage hold off. Preliminary results of the multigap INPIS tests at 230 kV and plasma-puff initiation methods are presented, and an application to compact pulser systems is discussed.

Lee, Ja H.↗

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗

Research on plasma-puff initiation of high Coulomb transfer switches

The plasma-puff triggering mechanism based on hypocycloidal pinch geometry was investigated to determine the optimal operating conditions for an azimuthally uniform surface flashover which initiates plasma-puff under wide ranges of fill gas pressures of Ar, He and N2. Research is presented and resulting conference papers are attached. These papers include 'Characteristics of Plasma-Puff Trigger for an Inverse-Pinch Plasma Switch'; 'Ultra-High-Power Plasma Switch INPUTS for Pulse Power Systems'; 'Characteristics of Switching Plasma in an Inverse-Pinch Switch'; 'Comparative Study of INPIStron and Spark Gap'; and 'INPIStron Switched Pulsed Power for Dense Plasma Pinches.'

Venable, Demetrius D.↗

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗

INPIStron switched pulsed power for dense plasma pinches

The inverse plasma switch INPIStron was employed for 10kJ/40kV capacitor bank discharge system to produce focused dense plasmas in hypocycloidal-pinch (HCP) devices. A single unit and an array of multiple HCP's were coupled as the load of the pulsed power circuit. The geometry and switching plasma dynamics were found advantageous and convenient for commutating the large current pulse from the low impedance transmission line to the low impedance plasma load. The pulse power system with a single unit HCP, the system A, was used for production of high temperature plasma focus and its diagnostics. The radially running down plasma dynamics, revealed in image converter photographs, could be simulated by a simple snow-plow model with a correction for plasma resistivity. The system B with an array of 8-HCP units which forms a long coaxial discharge chamber was used for pumping a Ti-sapphire laser. The intense UV emission from the plasma was frequency shifted with dye-solution jacket to match the absorption band of the Ti crystal laser near 500 nm. An untuned laser pulse energy of 0.6 J/pulse was obtained for 6.4 kJ/40 kV discharge, or near 103 times of the explosion limit of conventional flash lamps. For both systems the advantages of the INPIStron were well demonstrated: a single unit is sufficient for a large current (greater than 50 kA) without increasing the system impedance, highly reliable and long life operation and implied scalability for the high power ranges above I(sub peak) = 1 MA and V(sub hold) = 100 kV.

Han, Kwang S.↗

Interposed pulsed power system for fast separation of radioactive beams

This paper presents the novel design of an interposed pulsed power system, developed to drive a fast-switching magnet with a large multi-mH load inductance, and high field amplitude (> 1 T). This modulator can produce variable flat-top pulses from 1 to 30 ms with rise and fall times of less than 0.5 ms at a variable duty cycle of 3–91% into a heavily inductive load. The system employs a novel over-voltage topology to overcome the inherent inductance and achieve the fast rise and fall times, switching to a precision DC supply to efficiently maintain the flattop without requiring many-kV voltage. We present a power source design consideration, including the results of computer modeling as well as the first experimental results of a modulator scaled test model will also be presented.

47 OTHER INSTRUMENTATION↗

NASA Tech Briefs, June 2014

Topics include: Real-Time Minimization of Tracking Error for Aircraft Systems; Detecting an Extreme Minority Class in Hyperspectral Data Using Machine Learning; KSC Spaceport Weather Data Archive; Visualizing Acquisition, Processing, and Network Statistics Through Database Queries; Simulating Data Flow via Multiple Secure Connections; Systems and Services for Near-Real-Time Web Access to NPP Data; CCSDS Telemetry Decoder VHDL Core; Thermal Response of a High-Power Switch to Short Pulses; Solar Panel and System Design to Reduce Heating and Optimize Corridors for Lower-Risk Planetary Aerobraking; Low-Cost, Very Large Diamond-Turned Metal Mirror; Very-High-Load-Capacity Air Bearing Spindle for Large Diamond Turning Machines; Elevated-Temperature, Highly Emissive Coating for Energy Dissipation of Large Surfaces; Catalyst for Treatment and Control of Post-Combustion Emissions; Thermally Activated Crack Healing Mechanism for Metallic Materials; Subsurface Imaging of Nanocomposites; Self-Healing Glass Sealants for Solid Oxide Fuel Cells and Electrolyzer Cells; Micromachined Thermopile Arrays with Novel Thermo - electric Materials; Low-Cost, High-Performance MMOD Shielding; Head-Mounted Display Latency Measurement Rig; Workspace-Safe Operation of a Force- or Impedance-Controlled Robot; Cryogenic Mixing Pump with No Moving Parts; Seal Design Feature for Redundancy Verification; Dexterous Humanoid Robot; Tethered Vehicle Control and Tracking System; Lunar Organic Waste Reformer; Digital Laser Frequency Stabilization via Cavity Locking Employing Low-Frequency Direct Modulation; Deep UV Discharge Lamps in Capillary Quartz Tubes with Light Output Coupled to an Optical Fiber; Speech Acquisition and Automatic Speech Recognition for Integrated Spacesuit Audio Systems, Version II; Advanced Sensor Technology for Algal Biotechnology; High-Speed Spectral Mapper; "Ascent - Commemorating Shuttle" - A NASA Film and Multimedia Project DVD; High-Pressure, Reduced-Kinetics Mechanism for N-Hexadecane Oxidation; Method of Error Floor Mitigation in Low-Density Parity-Check Codes; X-Ray Flaw Size Parameter for POD Studies; Large Eddy Simulation Composition Equations for Two-Phase Fully Multicomponent Turbulent Flows; Scheduling Targeted and Mapping Observations with State, Resource, and Timing Constraints;

Source record↗

Investigating the Performance of SF6 Replacement Gases to Enable the Next Generation of Pulsed Power

High voltage switches are essential components in pulsed power systems, where consistent and reliable performance is crucial—particularly as the field explores alternatives to SF 6 as an insulating gas. This project examines the self-break voltage distributions of various gases, with a focus on the low-voltage discharges observed in the lower tail of these distributions. Experimental results revealed that the specific housing design influenced the self-break behavior. Among the tested gases, air demonstrated a more favorable overall distribution compared to SF 6 , albeit requiring higher operating pressures. However, air also exhibited a greater likelihood of extremely low-voltage dropouts, raising concerns about its suitability as a direct replacement for SF 6 . Notably, all gases tested showed a higher-than-expected probability of low-voltage events when considering the tail of the distribution rather than the bulk behavior.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A parametric SPICE model for the simulation of spark gap switches

The use of SPICE-based software for the simulation of pulsed power systems—even large complex systems—has become commonplace in the pulsed power community. This is in contrast to earlier work in the field that relied on specially developed simulation codes such as Sandia’s Screamer or the Navy Research Lab’s Bertha, which natively incorporated models for common pulsed power components such as spark gap switches. Unlike these programs, SPICE programs provide a simple and familiar user interface and wide availability. However, SPICE programs do not include realistic models for key pulsed power circuit devices—including the spark gap switch. While simple switch models do exist in SPICE programs, these can only crudely approximate the behavior of a spark gap. This effort focuses on developing an SPICE circuit model for a gas-filled spark gap switch that is physically realistic while being simple enough to permit simulations to run in reasonable times on typical personal computers. Detailed information is provided for implementation in two common versions of SPICE: LTspice and Orcad PSPICE. Adaptation to other SPICE programs is possible with minimal modification. The model is intended as a design tool that uses physical parameters as inputs to connect it directly to the development of useable pulsed power systems. Data collected from the operation of a high-pressure pulsed-charged switch and a complete 12-stage Marx generator have been used to demonstrate the implementation and accuracy of the model over a wide range of parameters.

Pouncey, J. Cameron (ORCID:0000000153500816)↗

Development of a 250 Degree C 15kV Supercascode Switch Using SiC JFET Technology

Tetra Corporation is developing a pulsed power drilling system for the geothermal industry. The system requires a high temperature switching technology to replace the existing technology based on Si thyristors with a temperature limit of 150 degrees C. This work focuses on the development of such switch based on a Supercascode configuration using SiC JFET technology. The development presented contains thermal models, packaging design and processes, circuit simulations and prototypes of both the Supercascode switch and the high temperature packaged SiC JFETs.

cascaded switch↗

Unifying femtosecond and picosecond single-pulse magnetic switching in Gd-Fe-Co

Many questions are still open regarding the physical mechanisms behind the magnetic switching in Gd-Fe-Co alloys by single optical pulses. Phenomenological models suggest a femtosecond scale exchange relaxation between sublattice magnetization as the driving mechanism for switching. The recent observation of thermally induced switching in Gd-Fe-Co by using both several picosecond optical laser pulse as well as electric current pulses has questioned this previous understanding. This has raised the question of whether or not the same switching mechanics are acting at the femtosecond and picosecond scales. In this work, we aim at filling this gap in the understanding of the switching mechanisms behind thermal single-pulse switching. To that end, we have studied experimentally thermal single-pulse switching in Gd-Fe-Co alloys, for a wide range of system parameters, such as composition, laser power, and pulse duration. We provide a quantitative description of the switching dynamics using atomistic spin dynamics methods with excellent agreement between the model and our experiments across a wide range of parameters and timescales, ranging from femtoseconds to picoseconds. Furthermore, we find distinct element-specific damping parameters as a key ingredient for switching with long picosecond pulses and argue that switching with pulse durations as long as 15 ps is possible due to a low damping constant of Gd. Our findings can be easily extended to speed up dynamics in other contexts where ferrimagnetic Gd-Fe-Co alloys have been already demonstrated to show fast and energy-efficient processes, e.g., domain-wall motion in a track and spin-orbit torque switching in spintronics devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Megavolt, Multigigawatt Pulsed Plasma Switch

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

Lee, Ja H.↗

Circuit Stops Prelasing In A Q-Switched Laser

Protective shutdown circuit stops prelasing in Q-switched laser operating at pulse-repetition rate of about 10 Hz. During normal operation, Q-switch prevents emission of light from laser cavity during application of Q-switch-trigger pulse. When circuit detects prelasing, it triggers relay turning off laser power supply. Circuit integrated into almost any Q-switched-laser system, provided one gains access to laser light, Q-switch-trigger pulse, and safety-interlock line of laser power supply.

Lockard, George E.↗

Magnetically switched power supply system for lasers

A laser power supply system is described in which separate pulses are utilized to avalanche ionize the gas within the laser and then produce a sustained discharge to cause the gas to emit light energy. A pulsed voltage source is used to charge a storage device such as a distributed capacitance. A transmission line or other suitable electrical conductor connects the storage device to the laser. A saturable inductor switch is coupled in the transmission line for containing the energy within the storage device until the voltage level across the storage device reaches a predetermined level, which level is less than that required to avalanche ionize the gas. An avalanche ionization pulse generating circuit is coupled to the laser for generating a high voltage pulse of sufficient amplitude to avalanche ionize the laser gas. Once the laser gas is avalanche ionized, the energy within the storage device is discharged through the saturable inductor switch into the laser to provide the sustained discharge. The avalanche ionization generating circuit may include a separate voltage source which is connected across the laser or may be in the form of a voltage multiplier circuit connected between the storage device and the laser.

Pacala, Thomas J.↗

RF-controlled implantable solid state switch

Miniature, totally implantable, solid state RF-controlled switching circuit for biotelemetry systems consumes zero power in off condition and turns on or off by pulse of RF energy. Switch, the size of small coin, is reducible by integrated circuit techniques.

Fryer, T. B.↗