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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Design and Performance of the Solid-State Laser Trigger System for HERMES III

The HERMES III accelerator is an 18-20 MeV linear induction accelerator constructed at Sandia National Laboratories in the late 1980s and which continues operation to this day. As part of recent modernization efforts, the laser triggering system on the accelerator has been replaced with a newly designed solid-state system. This system consists of ten Nd:YAG lasers, each having a nominal output energy of 40-45 mJ at a wavelength of 266 nm. The beam from each laser is split such that it triggers two of the Rimfire gas switches on the accelerator. Compared to the previous laser triggering system, this arrangement makes it possible to more readily tailor the final output pulse shape, and overall reliability for the accelerator's operation with these new lasers has increased. The design of this new laser triggering system is presented in this paper, along with details pertaining to the energy budgeting, optical beam paths, and electrical triggering of the lasers. Initial operational data from the HERMES III accelerator using this new triggering system is also presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗
DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗
DOE OSTI2021

Interposed pulsed power system for fast separation of radioactive beams

This paper presents the novel design of an interposed pulsed power system, developed to drive a fast-switching magnet with a large multi-mH load inductance, and high field amplitude (> 1 T). This modulator can produce variable flat-top pulses from 1 to 30 ms with rise and fall times of less than 0.5 ms at a variable duty cycle of 3–91% into a heavily inductive load. The system employs a novel over-voltage topology to overcome the inherent inductance and achieve the fast rise and fall times, switching to a precision DC supply to efficiently maintain the flattop without requiring many-kV voltage. We present a power source design consideration, including the results of computer modeling as well as the first experimental results of a modulator scaled test model will also be presented.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Investigating the Performance of SF6 Replacement Gases to Enable the Next Generation of Pulsed Power

High voltage switches are essential components in pulsed power systems, where consistent and reliable performance is crucial—particularly as the field explores alternatives to SF 6 as an insulating gas. This project examines the self-break voltage distributions of various gases, with a focus on the low-voltage discharges observed in the lower tail of these distributions. Experimental results revealed that the specific housing design influenced the self-break behavior. Among the tested gases, air demonstrated a more favorable overall distribution compared to SF 6 , albeit requiring higher operating pressures. However, air also exhibited a greater likelihood of extremely low-voltage dropouts, raising concerns about its suitability as a direct replacement for SF 6 . Notably, all gases tested showed a higher-than-expected probability of low-voltage events when considering the tail of the distribution rather than the bulk behavior.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

A parametric SPICE model for the simulation of spark gap switches

The use of SPICE-based software for the simulation of pulsed power systems—even large complex systems—has become commonplace in the pulsed power community. This is in contrast to earlier work in the field that relied on specially developed simulation codes such as Sandia’s Screamer or the Navy Research Lab’s Bertha, which natively incorporated models for common pulsed power components such as spark gap switches. Unlike these programs, SPICE programs provide a simple and familiar user interface and wide availability. However, SPICE programs do not include realistic models for key pulsed power circuit devices—including the spark gap switch. While simple switch models do exist in SPICE programs, these can only crudely approximate the behavior of a spark gap. This effort focuses on developing an SPICE circuit model for a gas-filled spark gap switch that is physically realistic while being simple enough to permit simulations to run in reasonable times on typical personal computers. Detailed information is provided for implementation in two common versions of SPICE: LTspice and Orcad PSPICE. Adaptation to other SPICE programs is possible with minimal modification. The model is intended as a design tool that uses physical parameters as inputs to connect it directly to the development of useable pulsed power systems. Data collected from the operation of a high-pressure pulsed-charged switch and a complete 12-stage Marx generator have been used to demonstrate the implementation and accuracy of the model over a wide range of parameters.

Pouncey, J. Cameron (ORCID:0000000153500816)↗
DOE OSTI2022

Development of a 250 Degree C 15kV Supercascode Switch Using SiC JFET Technology

Tetra Corporation is developing a pulsed power drilling system for the geothermal industry. The system requires a high temperature switching technology to replace the existing technology based on Si thyristors with a temperature limit of 150 degrees C. This work focuses on the development of such switch based on a Supercascode configuration using SiC JFET technology. The development presented contains thermal models, packaging design and processes, circuit simulations and prototypes of both the Supercascode switch and the high temperature packaged SiC JFETs.

cascaded switch↗
DOE OSTI2021

Unifying femtosecond and picosecond single-pulse magnetic switching in Gd-Fe-Co

Many questions are still open regarding the physical mechanisms behind the magnetic switching in Gd-Fe-Co alloys by single optical pulses. Phenomenological models suggest a femtosecond scale exchange relaxation between sublattice magnetization as the driving mechanism for switching. The recent observation of thermally induced switching in Gd-Fe-Co by using both several picosecond optical laser pulse as well as electric current pulses has questioned this previous understanding. This has raised the question of whether or not the same switching mechanics are acting at the femtosecond and picosecond scales. In this work, we aim at filling this gap in the understanding of the switching mechanisms behind thermal single-pulse switching. To that end, we have studied experimentally thermal single-pulse switching in Gd-Fe-Co alloys, for a wide range of system parameters, such as composition, laser power, and pulse duration. We provide a quantitative description of the switching dynamics using atomistic spin dynamics methods with excellent agreement between the model and our experiments across a wide range of parameters and timescales, ranging from femtoseconds to picoseconds. Furthermore, we find distinct element-specific damping parameters as a key ingredient for switching with long picosecond pulses and argue that switching with pulse durations as long as 15 ps is possible due to a low damping constant of Gd. Our findings can be easily extended to speed up dynamics in other contexts where ferrimagnetic Gd-Fe-Co alloys have been already demonstrated to show fast and energy-efficient processes, e.g., domain-wall motion in a track and spin-orbit torque switching in spintronics devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

The Impact of Inverter Dead-Time in Single-Phase Wireless Power Transfer Systems

In this paper, the effect of the dead-time on a single-phase wireless power transfer system is studied in detail. In practice, the dead-time is always placed between the complementary switching pulses of the inverter phase-leg. At higher operating frequencies, the dead-time issues in the resonant inverter become critical, especially as the power level increases. The detailed analysis of the dead-time on a wireless power transfer system is discussed for different operating conditions of the inverter duty-cycle and power factor. The switching characteristics of the wireless power transfer system inverter are analyzed, and the notch phenomenon that appears at the output of the inverter is also discussed. A notch equation based on the observations is derived to predict the notch occurrence during the system operation. Furthermore, the mathematical expressions are presented for different notch conditions. Subsequently, the effect of the notches on the sensitivity and the power transfer of the series-series compensated wireless power transfer system is analyzed. Finally, the approach is verified experimentally on an 8 kW wireless power transfer system prototype, and the results are compared with the theoretical analysis.

42 ENGINEERING↗
DOE OSTI2026

Ultra Wide Bandgap Laser Addressable Photoconductors

Wide Band Gap (WBG) and Ultra Wide Band Gap (UWBG) photoconductors have the potential to meet several critical mission needs for LLNL and the broader USG due to their exceptional characteristics related to large critical electric field. In particular, high energy laser systems such as the National Ignition Facility would benefit from the development of new materials for active optical devices such as the Optically Addressable Light Valve (OALV) used in the Programmable Spatial Shaper System. Missions in Global Security would benefit from higher performance Photoconductive Semiconductor Switches for pulsed power and radiofrequency amplifiers. This project examined the suitability of both commercially available and custom synthesized semi insulating WBG and UWBG materials for several of these applications. We developed high laser damage threshold OALVs for optical systems based on several of these materials as well as new RF, pulsed power, and power electronics devices based on the same. These devices show superior power handling in terms of laser damage threshold, electric field, and power output. A number of the technologies developed have been transitioned to both internal and external customers.

42 ENGINEERING↗
DOE OSTI2025

Testing of Novel Semiconductor Opening Switches Using Magnetic Switching

The performance of semiconductor opening switch (SOS) diodes with different doping profiles is assessed with the primary aim of enhancing or substituting hard-to-find devices. SOS devices are capable of providing long lifetime, gigawatt level pulses in generators with risetimes on the nanosecond scale with pulse widths on the order of 20 ns. An experimental testbed is described which allows for rapid testing of diodes with control of the forward pumping time which is a crucial parameter of SOS diodes. A saturable pulse transformer provides both the initial voltage multiplication and reverse current pulse required to drive SOS diodes. Voltage multiplication ratios of 16:1 were achieved with a modest charging voltage of 800 V and simple circuitry. With current densities of up to 1.4 kA ⋅ cm -2 , the testbed produces 10 kV output pulses into a 56 Ω load with a pulsewidth of 16 ns and delivered power of up to 1.9 MW. These novel devices are compared to legacy SOS diodes originating from Russia, with one of the profiles yielding increased performance. Finally, these profiles are studied in hopes of creating manufacturing demand to augment the availability of these useful devices.

drift step recovery diodes↗
DOE OSTI2020

Experimental determination of the thermal, turbulent, and rotational ion motion and magnetic field profiles in imploding plasmas

A tutorial is presented on advances in spectroscopic diagnostic methods developed for measuring key plasma properties in pulsed-power systems such as Z-pinches, magnetized-plasma compression devices, ion and electron diodes, and plasma switches. The parameters measured include the true ion temperature in Z-pinch implosions, which led to a discovery that much of the ion kinetic energy at stagnation is stored in hydrodynamic rather than in thermal motion. This observation contributed a new important insight into the understanding of the ion thermalization at stagnation and stimulated further investigations of turbulence at stagnation, discussed here too. The second part of this tutorial is devoted to the development of measurements for magnetic-field distributions in Z-pinches and in other pulsed-power systems, as well as their use in studying the plasma dynamics, resistivity, and pressure and energy balance. The latter study raises intriguing questions on the implosion process. In particular, in Z-pinches, the current during stagnation was found to largely flow at relatively large radii, outside the stagnation region. The magnetic-field measurements also enable investigations into the compression of a pre-magnetized cylindrical plasma that uncover striking phenomena related to the current flow, where the current was found to redistribute toward the outer regions during the implosion. Observation of the rotation of the magnetized plasma is also discussed. Lastly, experimental and theoretical investigations of a non-diffusive fast penetration of magnetic field into a low-density plasma, including its effect on the plasma dynamics, are described

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Analysis and Control of a Three-Port Converter with High-Frequency AC Link for Hybrid Unmanned/Autonomous Aerial Vehicles

In this study, a three-port resonant converter with a high-frequency isolation link for hybrid unmanned/autonomous aerial vehicle (UAV/AAV) applications is analyzed. The rectified engine-generator set output supplies the first input ports while the other is connected to a battery energy storage system. Input ports consist of half-bridge high-frequency inverters, whereas output port utilizes a semi-bridgeless active rectifier. This rectifier is formed by replacing rectifier low-side diodes with active switching devices. A phase-shift duty-cycle control is implemented for switching signals to regulate the power share and flow between ports. The proposed control system implemented achieves zero voltage switching (ZVS), reduces switching losses, and minimum current flow optimization ensures regulation in a wide range of output power. Compared to the existing bidirectional pulse width modulation (PWM) converters, the proposed system decreases the number of power conversion stages and provides centralized control without needing communications between the ports. The proposed control technique operating in closed-loop control achieves the power flow between ports under various load conditions. Finally, theoretical analysis demonstrates the proposed converter’s viability and laboratory experimental validations at 500 W full power.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2025

High-Voltage Pulsed Power Generator for Beam Injection Systems

Beam injection systems in hadron colliders require kickers generating ±50 kV peak voltages into a 50 Ω impedance, with peak currents of 1000 A and sub-10 ns rise and fall times. This paper presents a novel high-voltage pulse power generator utilizing a distributed pulser architecture. It combines gallium nitride (GaN) transistors in a Marx topology with an inductive adder, achieving nanosecond-scale switching speeds and high-power efficiency. Compared to other solutions such as based on MOSFETs or fast ionization dynistors, our development offers superior peak and average power performance, reduced system complexity, and enhanced reliability, marking a significant step forward in high-voltage pulse generation for accelerator applications.

Smirnov, Alexander (ORCID:0000000280631691)↗
DOE OSTI2021

Demonstration of a compact, multi-joule, diode-pumped Tm:YLF laser

We report the demonstration of a diode-pumped Tm:YLF laser operating at 1.88 µm that produces pulse energies up to 3.88 J in 20 ns. The compact system consists of a Q-switched cavity-dumped oscillator generating 18 mJ pulses, which are then amplified in a 4-pass power amplifier. Energies up to 38.1 J were obtained with long-pulse amplifier operation. These results illustrate the high energy storage and extraction capabilities of diode-pumped Tm:YLF, opening the path to high peak and average power mid-infrared solid-state lasers

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

High speed driver for particle beam deflector

A system, method and apparatus for providing pulsed power comprises a trigger comprising a pulse generator and a photonic transmitter and a multi-stage switch comprising a gate driver circuit, the gate driver circuit further comprising a plurality of transistors connected in series and a plurality of driver stages wherein each of the transistors is turned on and off simultaneously by the plurality of driver stages.

Frolov, Daniil↗
DOE OSTI2024

ITER ECH Transmission Line System Design and Status

The electron cyclotron (EC) heating & current drive (H&CD) system on ITER provides plasma heating by generating, transmitting, and launching high-intensity, high-frequency (170 GHz) electromagnetic wave energy steerable across the plasma cross-section. The transmission line (TL) subsystem connects the Matching Optics Unit (MOU) on each of the 24 gyrotrons to the 32 feed points in the four upper launchers and the 24 feed points in the equatorial launcher. Each TL must be able to operate at up to 1.2 MW of input power for up to 1 hour pulse lengths. The TL system contains 50 mm water-cooled corrugated waveguide, 90o miter bends, 140o miter bends, polarizer miter bend pairs, switches, expansion units, pumpouts, DC breaks, MOU-TL adapters, Radio Frequency (RF) loads, and isolation shutter valves. A detailed finite element analysis has been used to verify the thermo-mechanical performance of each component. The microwave performance has been analyzed using a 2-D electromagnetic code combined with a Monte Carlo code. This approach allows the impact of manufacturing and installation tolerances to be assessed and optimized to provide a high probability of achieving the system performance requirements. Prototypes of the waveguide and TL components have been fabricated and tested at high-power. Production contracts are now being issued for fabrication and delivery of the waveguide and components to ITER.

Hanson, Gregory↗
DOE OSTI2026

Flashlamp drive system for a high-energy 10–100 kHz pulse-burst Nd:YAG laser

We present the design of the flashlamp drive system for the NG100 laser, a 1 J/pulse, 10–100 kHz, pulse-burst Nd:YAG laser system being developed for application in a Thomson scattering plasma diagnostic. This flashlamp drive system is under active development, with a prototype now being constructed. The flashlamp drive system is modular, with each module capable of driving a series pair of linear flashlamps. Each drive module contains and is controlled by a dedicated Analog Regulator Controller. Thus each module is independently operable and controllable. This modular approach imposes no intrinsic limit to the number of modules that may be applied to drive the flashlamp pairs in a laser system. Each flashlamp drive module has a switch-regulated topology. An 1800 V main capacitor bank provides 25 kJ of energy storage, while a lower voltage output capacitor bank provides filtering and the initial energy delivered to the flashlamps at the start of the drive pulse. The main bank is recharged after each flashlamp drive pulse. As energy is drawn from the output bank by the flashlamps, an IGBT switching regulator feeds current from the main bank through an inductor to replenish the output capacitor bank. The rate of replenishment is feedback-controlled to maintain a regulated supply of power to the flashlamp load, with a setpoint range of 0.07 to 1.65 MW. An Analog Regulator Controller produces two-state variable pulse width feedback switching of the regulator IGBT. The switching frequency is ≤ 20 kHz, dynamically adjusted to limit ripple of the flashlamp power to ±3% statistical standard deviation of mean. For development or troubleshooting, each module is operable independent of the laser digital control system (microcontroller and FPGA).

Plasma diagnostics - interferometry↗