Direct evidence for carrier locations in graphite - Thermoelectric and Hall quantum resonances
Thermoelectric power and Hall effect quantum resonances in pressure annealed pyrolytic graphite crystals for carrier locations evidence
Woollam, J. A.↗
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Effective-field-theory model for the fractional quantum Hall effect
Starting directly from the microscopic Hamiltonian, a field-theory model is derived for the fractional quantum Hall effect. By considering an approximate coarse-grained version of the same model, a Landau-Ginzburg theory similar to that of Girvin (1986) is constructed. The partition function of the model exhibits cusps as a function of density. It is shown that the collective density fluctuations are massive.
Zhang, S. C.↗
New resistivity for high-mobility quantum Hall conductors
Measurements showing dramatic nonlocal behavior in the four-terminal resistances of a high-mobility quantum Hall conductor are presented. These measurements illustrate that the standard definition of the resistivity tensor is inappropriate, but they are in excellent agreement with a new model of the conductor that treats the edge and bulk conducting pathways independently. This model uses a single intensive parameter, analogous to a local resistivity for the bulk channel only, to characterize the system.
Mceuen, P. L.↗
Selective equilibration among the current-carrying states in the quantum Hall regime
The Hall resistance of a two-dimensional electron gas is measured with gated probes to determine the extent of equilibration among the N current-carrying states in the quantum Hall regime. After traveling macroscopic distances, current injected into the first state is equilibrated among the N - 1 lowest states but equilibration into the highest state varies strongly across the Hall plateau. This is attributed to a change in the Nth state from being localized within a magnetic length of the edge to substantially extending into the sample.
Alphenaar, B. W.↗
AlSb/InAs/AlSb quantum wells
Researchers studied the InAs/AlSb system recently, obtaining 12nm wide quantum wells with room temperature mobilities up to 28,000 cm(exp 2)/V center dot S and low-temperature mobilities up to 325,000 cm(exp 2)/V center dot S, both at high electron sheet concentrations in the 10(exp 12)/cm(exp 2) range (corresponding to volume concentrations in the 10(exp 18)/cm(exp 2) range). These wells were not intentionally doped; the combination of high carrier concentrations and high mobilities suggest that the electrons are due to not-intentional modulation doping by an unknown donor in the AlSb barriers, presumably a stoichiometric defect, like an antisite donor. Inasmuch as not intentionally doped bulk AlSb is semi-insulating, the donor must be a deep one, being ionized only by draining into the even deeper InAs quantum well. The excellent transport properties are confirmed by other observations, like excellent quantum Hall effect data, and the successful use of the quantum wells as superconductive weak links between Nb electrodes, with unprecendentedly high critical current densities. The system is promising for future field effect transistors (FETs), but many processing problems must first be solved. Although the researchers have achieved FETs, the results so far have not been competitive with GaAs FETs.
Kroemer, Herbert↗
Direct evidence for majority carrier locations in the Brillouin zone of graphite
Thermoelectric power and Hall effect quantum resonances in graphite for locating majority carrier electron and hole Fermi Surfaces in Brillouin zone
Woollam, J. A.↗
Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation
We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.
Hall, C.↗
Non-linear extreme quantum limit resistivity in graphite
Magnetoresistance nonlinearity and Hall effect in graphite in magnetic field, observing temperature dependence below 4.2 K
Woollam, J. A.↗
Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov-de Haas measurements
The transport properties of channel delta-doped quantum well structures were characterized by conventional Hall effect and light-modulated Shubnikov-de Haas (SdH) effect measurements. The large number of carriers that become available due to the delta-doping of the channel, leads to an apparent degeneracy in the well. As a result of this degeneracy, the carrier mobility remains constant as a function of temperature from 300 K down to 1.4 K. The large amount of impurity scattering, associated with the overlap of the charge carriers and the dopants, resulted in low carrier mobilities and restricted the observation of the oscillatory magneto-resistance used to characterize the two-dimensional electron gas (2DEG) by conventional SdH measurements. By light-modulating the carriers, we were able to observe the SdH oscillation at low magnetic fields, below 1.4 tesla, and derive a value for the quantum scattering time. Our results for the ratio of the transport and quantum scattering times are lower than those previously measured for similar structures using much higher magnetic fields.
Mena, R. A.↗
Minority carriers in graphite.
Quantum oscillations as a function of magnetic field in the Hall effect and thermoelectric power are studied in two samples of pressure-annealed pyrolytic graphite. Only the oscillations originating from minority-Fermi-surface carriers are discussed. Frequencies of the de Haas-van Alphen type are measured over a wide range of angles between the magnetic field and the c axis of the Brillouin zone. Results are given graphically and analyzed.
Woollam, J. A.↗
Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures
A simultaneous fit of Hall and conductivity data gives quantitative results on the carrier concentration and mobility in both the quantum well and the parallel conduction channel. In this study this method was applied to reveal several new findings on the effect of persistent photoconductivity (PPC) on free-carrier concentrations and mobilities. The increase in the two-dimensional electron-gas (2DEG) concentration is significantly smaller than the apparent one derived from single carrier analysis of the Hall coefficient. In the two types of structures investigated, delta doped and continuously doped barrier, the apparent concentration almost doubles following illumination, while analysis reveals an increase of about 20% in the 2DEG. The effect of PPC on mobility depends on the structure. For the sample with a continuously doped barrier the mobility in the quantum well more than doubles. This increase is attributed to the effective screening of the ionized donors by the large electron concentration in the barrier. In the delta doped barrier sample the mobility is reduced by almost a factor of 2. This decrease is probably caused by strong coupling between the two wells, as is demonstrated by self-consistent analysis.
Schacham, S. E.↗
High Operating Temperature Midwave Quantum Dot Barrier Infrared Detector (QD-BIRD)
The nBn or XBn barrier infrared detector has the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. High performance detectors and focal plane arrays (FPAs) based on InAsSb absorber lattice matched to GaSb substrate, with a matching AlAsSb unipolar electron barrier, have been demonstrated. The band gap of lattice-matched InAsSb yields a detector cutoff wavelength of approximately 4.2 ??m when operating at ~150K. We report results on extending the cutoff wavelength of midwave barrier infrared detectors by incorporating self-assembled InSb quantum dots into the active area of the detector. Using this approach, we were able to extend the detector cutoff wavelength to ~6 ?m, allowing the coverage of the full midwave infrared (MWIR) transmission window. The quantum dot barrier infrared detector (QD-BIRD) shows infrared response at temperatures up to 225 K.
quantum dot↗
Hardware-Efficient Quantum Optimization Layered Algorithms and Experiments
Quantum optimization algorithms, such as QAOA, that implement parametrized stochastic optimization solvers attempt to identify low-energy solutions of Ising systems by exploiting available quantum effects in noisy-intermediate scale machines. Engineering a well-performing parametrized quantum optimization circuit is indeed an exercise in balancing the trade-off between expressivity and implementation complexity. We show that, for MaxCut QAOA circuits defined on native hardware topology (Rigetti’s Aspen Quantum Processors), error-mitigation techniques recover simulated features of the noiseless theory. Moreover, we explore a design space for QAOA-like ansatze that perform well in theory as well as in hardware for fully-connected problems. We also discuss how efficient coherence and entanglement detection methods that could be coupled with quantum optimization experiments require only linear overhead in benchmarking time.
quantum computing↗
Temperature independent quantum well FET with delta channel doping
A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.
Young, P. G.↗
Performance of Ge:Ga far infrared detectors
A systematic study was carried out of the properties of Ge:Ga photoconductive infrared detectors for wavelengths approx. 100 micron. The detectors studied were made from Ge:Ga with acceptor concentration N sub A approx. 2 x 10 exp 14/cu cm with both low compensation (10 exp -2) and ultralow compensation (10 exp -4). Noise measurements have been made as a function of background photon rate, bias voltage, and chopping frequency. Detective quantum efficiencies approaching unity have been observed over a side range of experimental parameters. Photocurrent has been measured as a function of voltage and temperature. Hall mobility and lifetime have been measured to determine their effect on detector properties. A small potential drop has been observed in nominally ohmic contacts produced by implantation of B ions.
Hueschen, M. R.↗
NASA's Low-Cost Optical Terminal (LCOT) Free-Space Optical Subsystem (FSOS): Concept, Design, Build, & Test
We present the status of ongoing work at NASA’s Goddard Space Flight Center (GSFC) to build a prototype, low-cost-of-production, flexibly-configured ground terminal for space optical communication. For laser telecommunication to be cost effective for future missions, a wide-spread global network of operationally responsive optical terminals should be established. There has been a decades-old need for a single modular open systems approach (MOSA) ground terminal architecture capable of supporting multiple space missions ranging from LEO to Lunar distances with 2-way laser communications. At the heart of LCOT’s design concept is the Free-Space Optical Subsystem (FSOS). The major subassemblies of LCOT/FSOS that address most optical common configurations are : (1) Single 700mm F/12 Nasmyth folded Rx R-C Telescope, (2) Four independent 150mm diameter high-power all-reflective Tx beam directors (XOA), (3) Non-coherent direct detection Rx bench on starboard side of telescope (SOB), and (4) Coherent (possibly Quantum) optical communications bench on port side (POB). The Low-Cost Optical Terminal (LCOT) research and development (R&D) prototype is designed to be a generalized system that can be quickly field-reconfigured to support a wide variety of laser communications missions past, present, & future.
COTS↗
Current Status of NASA’s Low-Cost Optical Terminal (LCOT) at Goddard Space Flight Center
This paper provides the status of ongoing work at NASA-Goddard Space Flight Center (GSFC) to build a low-cost flexible ground terminal for optical communication. For laser communication to be cost-effective for future missions, a global network of flexible optical terminals must be put in place. There is a need for a single ground terminal design capable of supporting multiple missions ranging from LEO to lunar distances. NASA’s Low-Cost Optical Terminal (LCOT) has a single modular design that can be quickly reconfigured to support different laser communications missions. The LCOT prototype uses a 70cm commercially available telescope designed with optical and quantum communications in mind. This telescope is currently being integrated with a state-of-the-art adaptive optics system, and novel high-power laser amplifier demonstrate its utility as an optical communications receiver by receiving a downlink from the recently launched Laser Communication Relay Demonstration (LCRD). LCOT uses commercially available components wherever possible, and where commercial options are not available, the LCOT team works with vendors to create commercial options. This paper discusses the development progress for the blueprint of NASA’s future global ground terminal network.
Laser communications↗
NASA's LCOT (Low-Cost Optical Terminal) FSOS (Free-Space Optical Subsystem): Concept, Design, Build, & Test
We present the status of ongoing work at NASA’s Goddard Space Flight Center (GSFC) to build a prototype, low-cost-of-production, flexibly-configured ground terminal for space optical communication. For laser telecommunication to be cost effective for future missions, a wide-spread global network of operationally responsive optical terminals should be established. There has been a decades-old need for a single modular open systems approach (MOSA) ground terminal architecture capable of supporting multiple space missions ranging from LEO to Lunar distances with 2-way laser communications. At the heart of LCOT’s design concept is the Free-Space Optical Subsytem (FSOS). The major subassemblies of LCOT/FSOS that address most optical comms configurations are : (1) Single 700mm F/12 Nasmyth folded Rx R-C Telescope, (2) Four independent 150mm diameter high-power all-reflective Tx beam directors (XOA), (3) Non-coherent direct detection Rx bench on starboard side of telescope (SOB), and (4) Coherent (possibly Quantum) optical communications bench on port side (POB). The Low-Cost Optical Terminal (LCOT) research and development (R&D) prototype is designed to be a generalized system that can be quickly field-reconfigured to support a wide variety of laser communications missions past, present, & future.
COTS↗