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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

X-ray quantum efficiencies of CCD's

The X-ray quantum efficiency of a CCD was still high enough to obtain good X-ray imaging with this device. The range and response of the CCD to incident X-rays in the 5 to 14.1 KeV range were determined experimentally. Knowledge of this range and response allows direct measurement of quantum efficiency. Quantum efficiency decreased monotonically from 82% to 35% in the range studied. Comparison of experimental and theoretical quantum efficiencies allowed a determination of silicon bulk electron diffusion length. For the device studied, the electron diffusion length was 75 micrometers.

Peckerar, M.↗
NASA NTRS2007

Wide-Band, High-Quantum-Efficiency Photodetector

A design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of optiA design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of opti-

Jackson, Deborah↗
NASA NTRS1998

Quantum Efficient Detectors for Use in Absolute Calibration

The trap or quantum efficient detector has a quantum efficiency of greater than 0.98 for the region from 450 to 900 nm. The region of flattest response is from 600 to 900 nm. The QED consists of three windowless Hamamatsu silicon detectors. The QED was mounted below AVIRIS to monitor the Spectralon panel for changes in radiance during radiometric calibration. The next step is to permanently mount the detector to AVIRIS and monitor the overall radiance of scenes along with calibration.

Faust, Jessica↗
NASA NTRS1993

The quantum efficiency of HgCdTe photodiodes in relation to the direction of illumination and to their geometry

A theoretical study of the effect of the direction of the incident light on the quantum efficiency of homogeneous HgCdTe photodiodes suitable for sensing infrared radiation in the 8-12 microns atmospheric window is presented. The probability of an excess minority carrier to reach the junction is derived as a function of its distance from the edge of the depletion region. Accordingly, the quantum efficiency of photodiodes is presented for two geometries. In the first, the light is introduced directly to the area in which it is absorbed (opaque region), while in the second, the light passes through a transparent region before it reaches the opaque region. Finally, the performance of the two types of diodes is analyzed with the objective of finding the optimal width of the absorption area. The quantum efficiency depends strongly on the way in which the light is introduced. The structure in which the radiation is absorbed following its crossing the transparent region is associated with both higher quantum efficiency and homogeneity. In addition, for absorption region widths higher than a certain minimum, the quantum efficiency in this case is insensitive to the width of the absorption region.

Rosenfeld, D.↗
NASA NTRS1976

III-V photocathode with nitrogen doping for increased quantum efficiency

An increase in the quantum efficiency of a 3-5 photocathode is achieved by doping its semiconductor material with an acceptor and nitrogen, a column-5 isoelectronic element, that introduces a spatially localized energy level just below the conduction band similar to a donor level to which optical transitions can occur. This increases the absorption coefficient, alpha without compensation of the acceptor dopant. A layer of a suitable 1-5, 1-6 or 1-7 compound is included as an activation layer on the electron emission side to lower the work function of the photocathode.

James, L. W.↗
NASA NTRS1984

Investigation of the quantum efficiency of optical heterodyne detectors

The frequency response and quantum efficiency of optical photodetectors for heterodyne receivers is investigated. The measurements utilized two spectral lines from the output of two lasers as input to the photodetectors. These lines are easily measurable in power and frequency and hence serve as known inputs. By measuring the output current of the photodetector the quantum efficiency is determined as a function of frequency separation between the two input signals. An investigation of the theoretical basis and accuracy of this type of measurement relative to similar measurements utilizing risetime is undertaken. A theoretical study of the heterodyne process in photodetectors based on semiconductor physics is included so that higher bandwidth detectors may be designed. All measurements are made on commercially available detectors and manufacturers' specifications for normal photodetector operation are compared to the measured heterodyne characteristics.

Batchman, T. E.↗
NASA NTRS1983

Maximizing the quantum efficiency of microchannel plate detectors - The collection of photoelectrons from the interchannel web using an electric field

High quantum efficiency and two-dimensional imaging capabilities make the microchannel plate (MCP) a suitable detector for a sky survey instrument. The Extreme Ultraviolet Explorer satellite, to be launched in 1987, will use MCP detectors. A feature which limits MCP efficiency is related to the walls of individual channels. The walls are of finite thickness and thus form an interchannel web. Under normal circumstances, this web does not contribute to the detector's quantum efficiency. Panitz and Foesch (1976) have found that in the case of a bombardment with ions, electrons were ejected from the electrode material coating the web. By applying a small electric field, the electrons were returned to the MCP surface where they were detected. The present investigation is concerned with the enhancement of quantum efficiencies in the case of extreme UV wavelengths. Attention is given to a model and a computer simulation which quantitatively reproduce the experimental results.

Taylor, R. C.↗
NASA NTRS1984

Quantum efficiency measurements for several waveshifter coatings in the extreme vacuum ultraviolet

Quantum efficiency measurements are given for coronene and liumogen coatings designed to enhance UV sensitivity for silicon charge coupled device imaging detectors. Coatings on quartz and on UDT PIN 10DP photodiodes were tested. The wavelength range extended from 153.7 to 50.0 nm in the vacuum ultraviolet. Similar measurements were made for coronene, liumogen, and stilbene-3 laser dye films on quartz disks relative to sodium salicylate. Sodium salicylate and coronene are the most efficient waveshifters down to 50 nm so far observed. Coronene's fairly constant quantum efficiency over such a wide wavelength range into the far VUV makes it a useful waveshifter for UV and VUV applications.

Butner, C. L.↗
NASA NTRS1989

Strained-layer InGaAs/GaAs/AlGaAs single quantum well lasers with high internal quantum efficiency

Low threshold current density strained-layer In(0.2)Ga(0.8)As/GaAs/AlGaAs single quantum well lasers, emitting at 980 nm, have been grown by molecular beam epitaxy. Contrary to what has been reported for broad-area lasers with pseudomorphic InGaAs active layers grown by metalorganic chemical vapor deposition, these layers exhibit a high internal quantum efficiency (about 90 percent). The maximum external differential quantum efficiency is 70 percent, limited by an anomalously high internal loss possibly caused by a large lateral spreading of the optical mode. In addition, experimental results supporting the theoretically predicted strain-induced reduction of the valence-band nonparabolicity and density of states are presented.

Larsson, Anders↗
NASA NTRS1975

Quantum efficiency of a channel electron multiplier in the far ultraviolet

Variation of the quantum efficiency of a channel electron multiplier (CEM) in the wavelength range from 1200 to 2536 A is studied. Emphasis is on measurement of CEM sensitivity longward of 1500 A. Results indicate an overall rapid decrease in quantum efficiency with increasing wavelength, with little evidence for a possible change in slope in the range from 2000 to 2500 A. The lowest efficiency measured is 4.5 + or -2.5 times 10 to the minus ninth count/photon at 2536 A. These efficiencies should ensure that unwanted radiation longward of 1500 A can be effectively removed from the bandpass of the instrument.

Paresce, F.↗
NASA NTRS1989

Photosensor with enhanced quantum efficiency

A method to significantly increase the quantum efficiency (QE) of a CCD (or similar photosensor) applied in the UV, far UV and low energy x-ray regions of the spectrum. The increase in QE is accomplished by overthinning the backside of a CCD substrate beyond the epitaxial interface and UV flooding the sensor prior to use. The UV light photoemits electrons to the thinned surface and charges the backside negatively. This in turn forms an accumulation layer of holes near the Si-SiO.sub.2 interface creating an electric field gradient in the silicon which directs the photogenerated signal to the frontside where they are collected in pixel locations and later transferred. An oxide film, in which the backside charge resides, must have quality equivalent to a well aged native oxide which typically takes several years to form under ambient conditions. To reduce the amount of time in growing an oxide of sufficient quality, a process has been developed to grow an oxide by using deionized steam at 95.degree. C. which takes less than one hour to grow.

Janesick, James R.↗
NASA NTRS2009

OP09O-OP404-9 Wide Field Camera 3 CCD Quantum Efficiency Hysteresis

The HST/Wide Field Camera (WFC) 3 UV/visible channel CCD detectors have exhibited an unanticipated quantum efficiency hysteresis (QEH) behavior. At the nominal operating temperature of -83C, the QEH feature contrast was typically 0.1-0.2% or less. The behavior was replicated using flight spare detectors. A visible light flat-field (540nm) with a several times full-well signal level can pin the detectors at both optical (600nm) and near-UV (230nm) wavelengths, suppressing the QEH behavior. We are characterizing the timescale for the detectors to become unpinned and developing a protocol for flashing the WFC3 CCDs with the instrument's internal calibration system in flight. The HST/Wide Field Camera 3 UV/visible channel CCD detectors have exhibited an unanticipated quantum efficiency hysteresis (QEH) behavior. The first observed manifestation of QEH was the presence in a small percentage of flat-field images of a bowtie-shaped contrast that spanned the width of each chip. At the nominal operating temperature of -83C, the contrast observed for this feature was typically 0.1-0.2% or less, though at warmer temperatures contrasts up to 5% (at -50C) have been observed. The bowtie morphology was replicated using flight spare detectors in tests at the GSFC Detector Characterization Laboratory by power cycling the detector while cold. Continued investigation revealed that a clearly-related global QE suppression at the approximately 5% level can be produced by cooling the detector in the dark; subsequent flat-field exposures at a constant illumination show asymptotically increasing response. This QE "pinning" can be achieved with a single high signal flat-field or a series of lower signal flats; a visible light (500-580nm) flat-field with a signal level of several hundred thousand electrons per pixel is sufficient for QE pinning at both optical (600nm) and near-UV (230nm) wavelengths. We are characterizing the timescale for the detectors to become unpinned and developing a protocol for flashing the WFC3 CCDs with the instrument's internal calibration system in flight. A preliminary estimate of the decay timescale for one detector is that a drop of 0.1-0.2% occurs over a ten day period, indicating that relatively infrequent cal lamp exposures can mitigate the behavior to extremely low levels.

Collins, Nick↗