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DOE OSTI2022

Radiation hard gallium oxide scintillators for high count rate radiation detection

Despite decades of materials research, the availability of appropriate crystalline radiation-hard scintillators with ultrafast decay times (~10ns) and high light yields (>2000 ph/MeV) are still limited. In this study, we demonstrate the potential of gallium oxide (β-Ga 2 O 3 ) based scintillators for high count rate applications. The low-cost rugged β-Ga 2 O 3 scintillators were grown using the optical float zone (FZ) technique. Several dopants and growth atmospheres were used to demonstrate the balance between ultrafast primary decay time and the light yield of the scintillators. Light yields as high as 6446 ± 716 ph/MeV were obtained with 18.3 ns decay time for 662 keV gamma rays. Decay times as fast as 12ns were obtained with a 3212 ± 357 ph/MeV light yield. An excellent 662 keV gamma energy resolution of 7% was obtained using the β-Ga 2 O 3 :Ce crystals. Even with these excellent scintillation properties, the gamma radiation hardness of β-Ga 2 O 3 crystals was better than the leading radiation-hard lead tungstate (PbWO 4 ) crystals. Twenty-six scintillators fabricated from the grown β-Ga 2 O 3 crystals were tested for radiation hardness with a 60 Co gamma irradiation rate of 14 krad/h with a total radiation dose of 2 Mrad. The scintillation properties of these crystals remained unaffected. To date, no other scintillator has demonstrated such high radiation resistance. Furthermore, these FZ-grown low-cost, non-hygroscopic, and high-density β-Ga 2 O 3 scintillators can replace the existing scintillators in many applications ranging from nuclear and high energy physics experiments to nuclear security.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2020

Radiation hardness characterization of LKH-5 scintillating glass

Radiation hardness is an important property to examine in scintillators to help determine their expected lifetime in application cases where significant radiation dose is expected. Industrial imaging systems using 9 MV linear accelerators for x-ray radiography are one such application where significant radiation doses are expected to the scintillators used. Cadmium tungstate scintillators (CWO) and Thallium doped Cesium Iodide scintillators (CsI(Tl)) are used in some high energy cargo x-ray radiography systems. However, CWO has a high manufacturing cost for adequately uniform crystals and CsI(Tl) does not have sufficient radiation hardness. LKH-5 glass is being investigated as a potential low cost replacement for CWO and CsI(Tl). In this experiment 36 samples of a terbium doped silicate glass called LKH-5 were irradiated at doses up to 5 MRad using a 9 MV linear accelerator, and the change in their transmission properties was observed. Additionally, the glass was discovered to be a radiation hard glass due to the relatively small change in the transmission of the glass: less than 3% per cm at its emission peak of 550 nm and 5 MRad. This is similar to CWO which has a reported reduction in transmitted light of 2% per cm at 5 MRad and the emission peak of 475 nm and better than CsI(Tl) which is reported to have a reduction in transmitted light of 5% per cm at the emission peak of 550 nm and 4.2 MRad dose. Furthermore, an annealing procedure is described that returned the transmission of the glass to pre-irradiation values.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2021

Neutron radiation hardness of aluminum gallium nitride UV LEDs at various wavelengths

Radiation hard diagnostics are critical to the success of nuclear fusion at National Ignition Facility, Z, ITER, and prolonged space explorations. We have first demonstrated the exceptional proton radiation hardness of initial GaN devices and qualified their space flight and deployment for missions such as the Laser Interferometer Space Antenna and International Space Station. We have further conducted neutron radiation hardness experiments at Los Alamos Neutron Science Center by opening a new high fluence beam station. During 2014–2016, we irradiated multiple Aluminum Gallium Nitride (AlGaN) LEDs with a maximum fluence of 2.4 × 1013 neutrons/cm2 in 3 years and generated 54 161 current–voltage (I–V) scan traces. Our data processing program analyzes each and all I–V traces. In addition, we retrieved local temperature records to analyze and remove temperature effects in the outdoor environment. The I–V curve families of AlGaN UV LEDs with emitting wavelengths of 265, 275, and 310 nm were compared. The I–V curves of 265 nm AlGaN UV LEDs have the smallest deviations from the average value, while the I–V curves for 310 nm AlGaN LEDs showed the largest deviations from the average value. We have reached another important recommendation for the optimal use of multiple AlGaN optoelectronic devices or imaging arrays for inertially confined fusion diagnostics: Shorter wavelength devices at 265 nm exhibit more consistent radiation hardness performance than the 310 nm devices. Higher aluminum content LEDs or AlxGa1–xN devices with higher mole fraction x for generating shorter wavelengths have better radiation hardness for fusion diagnostics.

Sun, K. -X. (ORCID:0000000224659235)↗

DOE OSTI2024

Gallium oxide semiconductor-based large volume ultrafast radiation hard spectroscopic scintillators

We report on the development of the first-ever inorganic radiation-hard moisture-insensitive large volume spectroscopic semiconductor-based scintillator with less than 2 ns decay time and light yields as high as 8000 ph/MeV. Despite extensive research into scintillator materials, the quest for an ideal scintillator combining ultrafast decay times (akin to BaF 2 and Yb-doped scintillators such as Lu 2 O 3 :Yb), high light yields (exceeding 2000 photons per MeV), spectroscopic capabilities, and exceptional radiation hardness remain unfulfilled. In this study, we demonstrate and report for the first time the viability of large-volume (up to 20 mm thickness) gallium oxide (β-Ga 2 O 3 ) semiconductor-based scintillators for applications requiring these properties. These β-Ga 2 O 3 scintillators were grown using the fast turnaround (~2 days) crucible-free optical float zone (FZ) technique. The high light yield and ultrafast decay time of these high-purity n-type semiconductors with free carrier concentration of 6 × 10 17 cm –3 are attributed to native defects, specifically oxygen vacancies (V O ) and gallium–oxygen vacancy pairs (V Ga –V O ), generated during optimized FZ growth. The ultrafast decay, along with high light yield, enables excellent timing resolution and high count rate detection for applications like time-of-flight positron emission tomography, physics experiments, and nuclear safety. The radiation hardness of these devices has been documented in a separate publication.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

DOE OSTI2022

Radiation hard Ga 2 O 3 detectors for high energy physics

In this project, we explore the use of ultra-wide bandgap Ga 2 O 3 materials for fabricating next-generation radiation hard solid-state detectors for high energy physics (HEP) applications. As an emerging semiconductor, Ga 2 O 3 has ultra-wide bandgap (4.5-4.9 eV), high breakdown electric field (8 MV/cm) and much lower production cost compared with radiation hard diamond detectors, all of which make Ga 2 O 3 a great candidate material working in harsh radiation environment of future HEP experiments. The recent breakthrough of growth technologies of Ga 2 O 3 significantly improves the availability of large area single crystalline Ga 2 O 3 . We focus on an early proof-of-principle demonstration of Ga 2 O 3 detectors and conduct comprehensive material and detector characterization to evaluate the potential of the emerging Ga 2 O 3 as a new radiation-hard detector material. Our endeavors directly support the instrumentation development and update need of HEP experiments and fits very well into the DOE HEP “Detector R&D” research subprogram.

36 MATERIALS SCIENCE↗

DOE OSTI2022

RADiCAL—Precision Timing, Ultracompact, Radiation-Hard Electromagnetic Calorimetry

To address the challenges of providing high-performance calorimetry in future hadron collider experiments under conditions of high luminosity and high radiation (FCC-hh environments), we conducted R&D on advanced calorimetry techniques suitable for such operation, based on scintillation and wavelength-shifting technologies and photosensor (SiPM and SiPM-like) technology. In particular, we focused our attention on ultra-compact radiation-hard EM calorimeters based on modular structures (RADiCAL modules) consisting of alternating layers of the very dense absorber and scintillating plates, read out via radiation hard wavelength shifting (WLS) solid fiber or capillary elements to photosensors positioned either proximately or remotely, depending upon their radiation tolerance. RADiCAL modules provide the capability to measure simultaneously and with high precision the position, energy and timing of EM showers. This paper provides an overview of the instrumentation and photosensor R&D associated with the RADiCAL program.

Anderson, Thomas↗

DOE OSTI2024

Intelligent Pixel Detectors: Towards a Radiation Hard ASIC with On-Chip Machine Learning in 28 nm CMOS

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2020

Radiation-hard miniature optical engine with high bandwidth

Future silicon trackers will be operated in an intense radiation environment and require large volumes of data to be transmitted off detector. In addition, the optical modules must be of low mass in order to limit multiple scattering and nuclear interactions that would degrade the overall performance of the detector. Here, we present a miniature optical engine that satisfies these constraints. The optical engine consists of an ASIC driving a VCSEL (Vertical Cavity Surface Emitting Laser) array in an optical package. Two ASICs are designed to operate a 12-channel VCSEL array at 1.28 or 5.12 Gb/s per channel, which yields a total data rate of up to 60 Gb/s. The core transistors are fabricated in a 65 nm CMOS process which enhance the radiation-hardness. Each channel contains equalizer (CTLE) and clock-data recovery circuits (CDR) so that the ASIC can restore the highly distorted electrical signal after propagating through several meters of cables of small diameter. The equalizer, CDR, and VCSEL driver are configured via a digital I 2 C chip interface with triple redundant memory to mitigate single event upset (SEU) effects. The bias and modulation currents are controlled by a digital-to-analog converter (DAC). We present the design of the circuit together with the results of the simulations and preliminary measurements.

47 OTHER INSTRUMENTATION↗

DOE OSTI2023

Beam Test Results of the RADiCAL—A Radiation Hard Innovative EM Calorimeter

High-performance calorimetry conducted at future hadron colliders, such as the FCC-hh, poses a significant challenge for applying current detector technologies due to unprecedented beam luminosities and radiation fields. Solutions include developing scintillators that are capable of separating events at the sub-fifty picosecond level while also maintaining performance after extreme and constant neutron and ionizing radiation exposure. The radiation-hard innovative calorimeter (RADiCAL) is an approach that incorporates radiation tolerant materials in a sampling “shashlik”-style calorimeter configuration, using quartz capillaries filled with organic liquid or polymer-based wavelength shifters embedded in layers of tungsten plates and lutetium-yttrium oxyorthosilicate (LYSO) crystals. Here, this novel design intends to address the priority research directions (PRD) for calorimetry listed in the DOE basic research needs (BRN) workshop for high energy physics (HEP) instrumentation. Here we report preliminary results from an experimental run at the Fermilab Test Beam Facility (FTBF) in June 2022. These tests demonstrate that the RADiCAL concept is capable of ¡50 ps timing resolution.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2020

Evaluation of radiation hardness of High-Voltage silicon vertical JFETs

In the future ATLAS Inner Tracker, each silicon strip module will be equipped with a switch able to separate the high voltage supply from the sensor in case the latter becomes faulty. The switch, placed in between the HV supply and the sensor, needs to sustain a high voltage in its OFF state, to offer a low resistance path for the sensor leakage current in the ON state, and be radiation hard up to 1.2 * 10 15 neq/cm 2 along with other requirements. While GaN JFETs have been selected as suitable rad-hard switch, a silicon vertical HV-JFET was developed by Brookhaven National Laboratory as an alternative option. Pre-irradiation results showed the functionality of the device and proved that the silicon HV-JFET satisfied the pre-irradiation requirements for the switch. To assess its suitability after irradiation, a few p-type HV-JFETs have been neutron irradiated at Jozef Stefan Institute (JSI, Ljubljana, Slovenia). Overall, this paper reports the static characterization of these irradiated devices and the TCAD numerical simulations used to get an insight of the physics governing the post-irradiation behaviour.

47 OTHER INSTRUMENTATION↗

DOE OSTI2020

Radiation hardness of the low gain avalanche diodes developed by NDL and IHEP in China

This paper presents a study on the radiation hardness of low gain avalanche detector (LGAD) developed by the Novel Device Laboratory (NDL) in Beijing and the Institute of High Energy Physics (IHEP) of Chinese Academy of Sciences, in the context of an upgrade project of the ATLAS detector for the high luminosity phase of LHC. NDL LGAD sensors with different layouts, epitaxial resistivity and doping profile were irradiated up to 1.02 × 10 15 n eq /cm 2 by 70 MeV protons at Cyclotron and Radioisotope Center (CYRIC). The timing resolution of NDL LGAD sensors reached 50 ps and the collected charge reached 3 - 4 fC after irradiation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2022

Beta Radiation Hardness of GYGAG(Ce) Transparent Ceramic Scintillators

GYGAG(Ce) transparent ceramic garnet scintillators were irradiated with electrons from 0.5 to 2 MeV with fluences from 10 16 e – /cm 2 to 10 19 e – /cm 2 , corresponding to doses from 0.3 to 310 Gigarad. Absorption spectra were measured before and after irradiations. Light yields from alpha, beta, and gamma excitations were measured before and after irradiation and compared to preirradiation values to gain a deeper understanding of how electron irradiations can affect light yield, as well as defects generated in both the surface and bulk. Within experimental error, no degradation in light yield was observed for the electron-irradiated samples, as measured via beta or gamma excitation, with minimal degradation observed via alpha excitation. A small increase in optical absorption near the wavelength of emission was observed following the largest dose irradiation. These results suggest that GYGAG(Ce) is radiation hard to electron irradiation up to 10 19 e – /cm 2 and doses up to 310 Gigarad. Furthermore, this robustness to irradiation indicates that transparent ceramic garnets may prove useful for applications such as scintillation-based nuclear batteries by allowing for higher energy beta emitters, increased power densities, and enabling long service lifetimes.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Development of Lattice-Mismatched GaInAsP for Radiation Hardness

We develop lattice-mismatched GaInAsP as an alternative alloy to pure As-based alloys currently used in III-V multijunction solar cells. Increasing the alloy phosphorous and indium content while maintaining an optimal bandgap may allow high efficiency multijunction devices with increased radiation hardness. Here, 1.0-eV GaInAsP is developed and implemented into single and multijunction solar cell devices. The lattice-mismatched GaInAsP must be grown strain free, and the subcell thickness must be maintained below the thickness where surface-driven phase separation occurs. As observed in transmission electron microscopy and cathodoluminescence imaging, phase separation strengthens in the GaInAsP layer and leads to interfacial defect formation when the cell thickness is too great. We show single junction 1.0-eV Ga 0.5 In 0.5 As 0.7 P 0.3 with excellent carrier collection and a bandgap-voltage offset of 0.40 V. This material quality approaches that of 1.0-eV Ga 0.7 In 0.3 As used in inverted metamorphic multijunction devices, but has increased phosphorus content and consequently is expected to have a higher radiation resistance. We incorporate the 1.0-eV GaInAsP subcell into a 3-junction inverted metamorphic solar cell to test the performance of the subcell in a multijunction. No additional loss is observed upon integration into a multijunction cell: both the carrier collection and voltage of the GaInAsP subcell are unchanged from single junction devices. While further materials development and radiation testing is still required, these preliminary results indicate that lattice-mismatched GaInAsP can be effectively used in multijunction solar cells to replace radiation-soft materials.

14 SOLAR ENERGY↗

DOE OSTI2026

AI-driven neutrino diagnostics and radiation-hard beam instrumentation for next-generation neutrino experiments

The Long Baseline Neutrino Facility (LBNF) at Fermilab will deliver a high-intensity, multi-megawatt neutrino beam to the Deep Underground Neutrino Experiment (DUNE), enabling precision tests of the three-neutrino paradigm, CP violation searches, neutrino mass ordering determination, and supernova neutrino studies. To accelerate DUNE’s physics reach and ensure robust beam operations, we propose an integrated AI-driven framework with real-time diagnostics and radiation-hardened instrumentation. At its core is a Real-Time Beam Integrity Monitor using a physics-informed Digital Twin. By reconstructing pion phase space from muon profiles and exploiting magnetic horn optic linearity, it enables spill-by-spill beam correction and flux stabilization. By using this approach, flux-related systematics could be reduced from 5% to 1%, potentially accelerating the discovery of CP violations by four to six years. Complementing this, a US–Japan R&D effort will deploy a LAPPD-based muon monitor in the NuMI beamline. ToF measurements can be acquired with picosecond precision using this radiation-hard system, enhancing sensitivity to horn chromatic effects. Simulations confirm strong response to these effects. ML models predict beam quality and horn current to sub-percent accuracy from muon data, enhancing anomaly detection and stability. This scalable, AI-enabled strategy improves beam fidelity, reduces systematics, and sets a new standard for high-power accelerator operations.

Ganguly, Sudeshna [Fermilab] (ORCID:00000003163482↗

DOE OSTI2024

Radiation-Hard Smart-Pixel Detector ASIC ReadOut with Digital AI in 28nm

Detectors at future high energy colliders will face enormous technical challenges. Disentangling the unprecedented numbers of particles expected in each event will require highly granular silicon pixel detectors with billions of readout channels. With event rates as high as 40 MHz, these detectors will generate petabytes of data per second. To enable discovery within strict bandwidth and latency constraints, future trackers must be capable of fast, power efficient, and radiation hard data-reduction at the source. This effort is pursuing the co-design development of high-performance readout smart pixel ASICs for a future Phase III High Luminosity upgrade of the Large Hadron Collider. A 1.6mm2 ASIC prototype was designed by Fermilab in CMOS 28 nm bulk process and submitted for manufacturing in February 2024. It leverages the analog front-end pixel design of a previous prototype fabricated and tested in 2023, which achieved a simulated detection level of ~400e- with 30fF input capacitance. The ROIC consists of two matrices of 16×16 smart pixels, each 25×25 μm2 in size. Each smart pixel contains a charge-sensitive preamplifier with leakage current compensation and three auto-zero comparators for a 2-bit flash-type ADC. There is digital space for the integration of our fully combinatorial AI that performs momentum classification at the bunch crossing rate. The total power consumption is ∼6μW per pixel, which corresponds to ~1mW/cm2. The ASIC incorporates programmable front-end charge injection circuitry to generate pixel cluster charges during characterization. The cluster profile will be generated to duplicate hit characteristics of various momentum (pT). We will present early results from chip testing.

Parpillon, Benjamin↗

DOE OSTI2025

AI-driven neutrino diagnostics and radiation-hard beam instrumentation for next-generation neutrino experiments

Ganguly, Sudeshna [Fermilab] (ORCID:00000003163482↗

DOE OSTI2020

CACTUS: A depleted monolithic active timing sensor using a CMOS radiation hard technology

The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial granularity of the order of 1 mm. A time measurement at this precision level will also be of interest beyond the LHC and beyond high energy particle physics. We present in this paper the first developments towards a radiation hard Depleted Monolithic Active Pixel Sensor (DMAPS), with high-resolution time measurement capability. The technology chosen is a standard high voltage CMOS process, in conjunction with a high resistivity detector material, which has already proven to efficiently detect particles in tracking applications after several hundred of Mrad of irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2024

The Mu2e Digitizer ReAdout Controller (DiRAC): characterization and radiation hardness

The Mu2e experiment at Fermilab will search for the neutrino-less coherent conversion of a muon into an electron in the field of a nucleus. Mu2e detectors comprise a straw tracker, an electromagnetic calorimeter and a veto for cosmic rays. The calorimeter employs 1348 Cesium Iodide crystals readout by silicon photo-multipliers and fast front-end, and digitization electronics. The digitization board is named DiRAC (Digitizer ReAdout Controller) and 140 cards are needed for the readout of the full calorimeter. The DiRACs are hosted in crates located on the external surface of calorimeter disks, inside the detector solenoid cryostat and must sustain very high radiation and magnetic field so it was necessary to fully qualify it. Several version of prototypes were validated for operation in a high-vacuum (10−4 Torr) and under a 1T magnetic field. An extensive radiation hardness qualification campaign, carried out with photons, 14 MeV neutron beams, and 200 MeV protons, certified the DiRAC design to sustain doses up to 12 Krad, neutron fluences up to ∼ 1011 1 MeV neq/cm2, and very low occurrences of single-event effects. The qualification campaigns and quality assurance procedures will be reviewed.

43 PARTICLE ACCELERATORS↗