Radiation Hardness Assurance Test Guidelines for Photodetectors and Image Sensors
Presentation of the Radiation Hardness Assurance (RHA) guidelines content.
Jean- Marie Lauenstein↗
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Instructions for Plastic Encapsulated Microcircuit(PEM) Selection, Screening and Qualification.
The use of Plastic Encapsulated Microcircuits (PEMs) is permitted on NASA Goddard Space Flight Center (GSFC) spaceflight applications, provided each use is thoroughly evaluated for thermal, mechanical, and radiation implications of the specific application and found to meet mission requirements. PEMs shall be selected for their functional advantage and availability, not for cost saving; the steps necessary to ensure reliability usually negate any initial apparent cost advantage. A PEM shall not be substituted for a form, fit and functional equivalent, high reliability, hermetic device in spaceflight applications. Due to the rapid change in wafer-level designs typical of commercial parts and the unknown traceability between packaging lots and wafer lots, lot specific testing is required for PEMs, unless specifically excepted by the Mission Assurance Requirements (MAR) for the project. Lot specific qualification, screening, radiation hardness assurance analysis and/or testing, shall be consistent with the required reliability level as defined in the MAR. Developers proposing to use PEMs shall address the following items in their Performance Assurance Implementation Plan: source selection (manufacturers and distributors), storage conditions for all stages of use, packing, shipping and handling, electrostatic discharge (ESD), screening and qualification testing, derating, radiation hardness assurance, test house selection and control, data collection and retention.
King, Terry↗
Enhanced Low Dose Rate Effects in Bipolar Circuits: A New Hardness Assurance Problem for NASA
Many bipolar integrated circuits are much more susceptible to ionizing radiation at low dose rates than they are at high dose rates typically used for radiation parts testing. Since the low dose rate is equivalent to that seen in space, the standard lab test no longer can be considered conservative and has caused the Air Force to issue an alert. Although a reliable radiation hardness assurance test has not yet been designed, possible mechanisms for low dose rate enhancement and hardness assurance tests are discussed.
bipolar integrated circuits↗
Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes
In this paper, we use high- and low-magnification optical microscope images, thermal infrared camera images, and scanning electron microscope images to identify failure locations in heavy-ion-irradiated Schottky diodes. After failures have been identified, the parts were cross-sectioned to describe the structure of the failures and energy dispersive x-ray spectroscopy was used to characterize the materials in the failure structures.
Radiation effects↗
Schottky Diode Derating for Survivability in a Heavy Ion Environment
In this paper, we irradiate a number of silicon power Schottky diodes from a variety of manufacturers. The tested diodes represent a wide assortment of reverse voltages and forward currents. Additionally, we review correlations between single-event failures in Schottky diodes and device electrical parameters. The spatial locations of failures in the diode are discussed, as well as a possible explanation for why the failures occur. Based on these correlations to date, we propose a derating scheme for Schottky diodes flown in a heavy ion environment and suggest screening procedures for decreasing the risks of such failures.
Radiation effects↗
Guideline for Single-Event Effect (SEE) Testing of System on a Chip (SOC) Devices
The use of complex single and multicore processors with significant cache memory, on-chip peripherals, memory controllers, and high speed input/output (IO) that integrate many of the parts of a traditional computer system is becoming more common in space applications. Such devices are often referred to as system on a chip devices (SOCs), even though the term is used somewhat inaccurately due to the lack of analog and mixed signal subcircuits. These devices are complex combinations of single- or multi-core processors with memory controllers, high-speed input/output (IO), and other peripheral structures that formerly would have been handled by off-chip resources. In the past the processors were tested for single event effects (SEE) separately, and the peripherals were often put into custom application-specific integrated circuits (ASICs) along with other resources required by the user. Performance and cost pressures have pushed commercial devices to incorporate many of the functional blocks into a single chip, an SOC. The NASA Electronic Parts and Packaging Program (NEPP) has been examining ways to perform SEE radiation hardness assurance (RHA) testing of these processor-centric SOCs to achieve reasonable understanding of their performance in space missions.
Guertin, Steven M.↗
1988 IEEE Annual Conference on Nuclear and Space Radiation Effects, 25th, Portland, OR, July 12-15, 1988, Proceedings
The effects of nuclear and space radiation on the performance of electronic devices are discussed in reviews and reports of recent investigations. Topics addressed include the basic mechanisms of radiation effects, dosimetry and energy-dependent effects, sensors in and for radiation environments, EMP/SGEMP/IEMP phenomena, radiation effects on isolation technologies, and spacecraft charging and space radiation effects. Consideration is given to device radiation effects and hardening, hardness assurance and testing techniques, IC radiation effects and hardening, and single-event phenomena.
Coakley, Peter G.↗
1989 IEEE Annual Conference on Nuclear and Space Radiation Effects, 26th, Marco Island, FL, July 25-29, 1989, Proceedings. Part 1
Various papers on nuclear science are presented. The general topics addressed include: basic mechanics of radiation effects, dosimetry and energy-dependent effects, hardness assurance and testing techniques, spacecraft charging and space radiation effects, EMP/SGEMP/IEMP phenomena, device radiation effects and hardening, radiation effects on isolation technologies, IC radiation effects and hardening, and single-event phenomena.
Ochoa, Agustin, Jr.↗
Recent Radiation Effects Activities at JPL: Coping with COTS
The rediation effects and testing programs in place at the Jet Propulsion Laboratory support the insertion of traditional, advanced, and emerging microelectronic and photonic technologies in NASA systems through research and testing that enhances the radiation hardness assurance (RHA) of these technologies. With the decreasing availability of radiation hardened electronics and the new NASA paradigm of faster, more aggressive and less expensive space missions, there has been an increasing emphasis on using high performance commercial microelectronic parts and circuits in NASA spacecraft.
radiation↗
1992 IEEE Annual Conference on Nuclear and Space Radiation Effects, 29th, New Orleans, LA, July 13-17, 1992, Proceedings
The papers presented in this volume provide an overview of recent theoretical and experimental research related to nuclear and space radiation effects. Topics dicussed include single event phenomena, radiation effects in particle detectors and associated electronics for accelerators, spacecraft charging, and space environments and effects. The discussion also covers hardness assurance and testing techniques, electromagnetic effects, radiation effects in devices and integrated circuits, dosimetry and radiation facilities, isolation techniques, and basic mechanisms.
Van Vonno, Nick W.↗
Annual Conference on Nuclear and Space Radiation Effects, 19th, Las Vegas, NV, July 20-22, 1982, Proceedings
The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.
Long, D. M.↗
Screening Parts for Space Missions Using a Pulsed Laser to Test for Failures
This presentation gives an overview pulsed laser testing methods and practical examples for radiation hardness assurance in space system electronics.
Radiation hardness assurance↗
Outline: Recent work at JPL Under MSREP
MSREP is a multi-faceted program with radiation effects in new technologies, development of testing and hardness assurance methods, continual evaluation of space and laboratory test data and support to NASA Projects. Other work in progress includes: 1) Device Scaling and New Phenomena; 2) Radiation Effects in Microprocessors; 3) Latchup Testing and Latchup Mitigation; and 4) Revised Radiation Design Approaches. This paper is in viewgraph form.
Source record↗
Radiation Hardness Assurance for Space Systems
The space radiation environment can lead to extremely harsh operating conditions for on-board electronic box and systems. The characteristics of the radiation environment are highly dependent on the type of mission (date, duration and orbit). Radiation accelerates the aging of the electronic parts and material and can lead to a degradation of electrical performance; it can also create transient phenomena on parts. Such damage at the part level can induce damage or functional failure at electronic box, subsystem, and system levels. A rigorous methodology is needed to ensure that the radiation environment does not compromise the functionality and performance of the electronics during the system life. This methodology is called hardness assurance. It consists of those activities undertaken to ensure that the electronic piece parts placed in the space system perform to their design specifications after exposure to the space environment. It deals with system requirements, environmental definitions, part selection, part testing, shielding and radiation tolerant design. All these elements should play together in order to produce a system tolerant to.the radiation environment. An overview of the different steps of a space system hardness assurance program is given in section 2. In order to define the mission radiation specifications and compare these requirements to radiation test data, a detailed knowledge of the space environment and the corresponding electronic device failure mechanisms is required. The presentation by J. Mazur deals with the Earth space radiation environment as well as the internal environment of a spacecraft. The presentation by J. Schwank deals with ionization effects, and the presentation by T. Weatherford deals with Single particle Event Phenomena (SEP) in semiconductor devices and microcircuits. These three presentations provide more detailed background to complement the sections 3 and 4. Part selection and categorization are discussed in section 5. Section 6 presents the organization of the hardness assurance within a project. Section 7 discusses emerging radiation hardness assurance issues.
Poivey, Christian↗
Solid State Drive Radiation Assurance With Active Testing
Automotive and industrial grade SSDs were tested for TID and SEE response at the assembly level to investigate radiation tolerance trends and explore radiation hardness assurance best practices in commercial memory devices. SSDs were installed in passive NVMe extenders to place only the drive in the beam line. A digital I/O module connected to the test computer provided inhibit signals to block both facility beam delivery and power while attempting recovery from any device failure conditions (e.g., failed write, failed read, or unresponsive device).
Edward P Wilcox↗
1987 Annual Conference on Nuclear and Space Radiation Effects, Snowmass Village, CO, July 28-31, 1987, Proceedings
Various papers on nuclear and space radiation effects are presented. The general topics addressed include: basic mechanisms of radiation effects, single-event phenomena, temperature and field effects, modeling and characterization of radiation effects, IC radiation effects and hardening, and EMP/SGEMP/IEMP phenomena. Also considered are: dosimetry/energy-dependent effects, sensors in and for radiation environments, spacecraft charging and space radiation effects, radiation effects and devices, radiation effects on isolation technologies, and hardness assurance and testing techniques.
Source record↗
Preliminary Radiation Testing of a State-of-the-Art Commercial 14nm CMOS Processor/System-on-a-Chip
Hardness assurance test results of Intel state-of-the-art 14nm “Broadwell” U-series processor / System-on-a-Chip (SoC) for total ionizing dose (TID) are presented, along with exploratory results from trials at a medical proton facility. Test method builds upon previous efforts [1] by utilizing commercial laptop motherboards and software stress applications as opposed to more traditional automated test equipment (ATE).
microprocessor↗
Hardness Assurance and Testing Techniques for High Resolution (12- to 16-bit) Analog-to-Digital Converters
Discussed are hardness assurance and testing techniques to test and evaluate total dose radiation degradation of high resolution A/D converters. Because high-speed, high-resolution converters are critical parts in a digital signal processing or data acquisition system, the evaluation of performance in the early design phase is very important. Converters from three manufacturers are evaluated.
Analog-to-Digital↗