Search NASA⌕ Search

SEARCH · Search NASA

Results for “rectification ratio”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

17 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Here we investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low rectification and high leakage current compared to contacts on as-grown films. By employing an optimized surface treatment to restore the GaN surface following UHPA, we obtain Schottky contacts with a high rectification ratio of ~10 9 , a near-unity ideality factor of 1.03, and a barrier height of ~0.9 eV. These characteristics enable the development of GaN junction barrier Schottky diodes employing Mg implantation and UHPA.

42 ENGINEERING↗
DOE OSTI2023

Gallium Oxide Heterojunction Diodes for 400 °C High‐Temperature Applications

β ‐Ga 2 O 3 ‐based semiconductor devices are expected to have significantly improved high‐power and high‐temperature performance due to its ultrawide bandgap of close to 5 eV. However, the high‐temperature operation of these ultrawide‐bandgap devices is usually limited by the relatively low 1–2 eV built‐in potential at the Schottky barrier with most high‐work‐function metals. Herein, heterojunction p ‐NiO/n‐ β ‐Ga 2 O 3 diodes fabrication and optimization for high‐temperature device applications are reported, demonstrating a current rectification ratio ( I ON / I OFF ) of more than 10 6 at 410 °C. The NiO heterojunction diode can achieve higher turn‐on ( V ON ) voltage and lower reverse leakage current compared to the Ni‐based Schottky diode fabricated on the same single‐crystal β ‐Ga 2 O 3 substrate, despite charge transport dominated by interfacial recombination. Electrical characterization and device modeling show that these advantages are due to a higher built‐in potential and additional band offset. These results suggest that heterojunction p–n diodes based on β ‐Ga 2 O 3 can significantly improve high‐temperature electronic device and sensor performance.

Sohel, Shahadat H.↗
DOE OSTI2025

Heterogenous Integration of Boron-Doped p -Diamond with Monolayer n -MoS 2 for PN Junctions Operating at Room Temperature

Diamond has tremendous potential for power electronics, due to its superior thermal conductivity, large electric field strength, and high carrier mobilities. However, the absence of a reliable room temperature n-type transport has impeded any advancements in diamond-based electronics. Here, we circumvent this bottleneck by integrating n-type two-dimensional (2D) monolayers of molybdenum disulfide (MoS 2 ) with boron doped p-type single crystal diamond and demonstrate 2D/3D heterostructure-based PN junction diodes that operate at room temperature with excellent rectification characteristics. Our diodes achieve a maximum forward current density (J D ) of ∼4000 A/cm 2 , an ideality factor (η) value of ∼3.7, and a rectification ratio (RR) of 10 6 . We find that the origin of current rectification stems from the interlayer recombination of majority carriers driven by direct tunnelling (DT) and Fowler Nordheim (FN) tunnelling mechanisms. In conclusion, our demonstration can open new avenues for diamond-based power electronics through its integration with 2D materials.

2D/3D integration↗
DOE OSTI2024

The effect of temperature oscillations on energy storage rectification in harmonic systems

Abstract Rectification, the preferential transport of a current in one direction through a system, has garnered significant attention in molecules because of its importance for controlling thermal and electronic currents at the nanoscale. Here, we report the presence of energy storage rectification effects in a molecular chain. This phenomenon is generated by subjecting a harmonic molecular chain to an oscillating temperature gradient and showing that the energy absorption rate of the system depends on the direction of the gradient. We examine how the energy storage rectification ratios in the chain are affected by the oscillating gradient, asymmetry in the chain, and the system parameters. We find that energy storage rectification can be observed in harmonic lattice structures with time-dependent temperatures and that, correspondingly, anharmonicity is not required to generate this rectification mechanism in such systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Improving 2D Schottky contacts using an intralayer strategy

An additional insulating layer between the electrode and semiconductor is beneficial to reduce the interfacial coupling and build two-dimensional (2D) Schottky contacts. Here, an intralayer strategy was proposed by using metallic 2D Bi 2 Sr 2 CaCu 2 O 8+δ (BSCCO) as contacts on 2D semiconductors. Inside a BSCCO monolayer, a conductive layer is sandwiched between insulating layers. Thus, the BSCCO contact has its own insulating layer, which is ultra-thin, single crystalline, and of high quality. This native layer could reduce the metal-induced gap state and thus weaken the interfacial Fermi level pinning effect. Such 2D Schottky diodes thus have barrier heights of 300 mV and a rectification ratio of 104. Furthermore, 2D metal-semiconductor field-effect transistors with BSCCO Schottky gate have a high on-off ratio, low leakage current, and low subthreshold swing value near the theoretical limit. The intralayer structure offers a new approach to improve the 2D Schottky junctions and has prospects in 2D electronics and optoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Electron Spin Polarization and Rectification Driven by Chiral Perylene Diimide-Based Nanodonuts

The chirality-induced spin selectivity (CISS) effect allows thin-film layers of chiral conjugated molecules to function as spin filters at ambient temperature. Through solvent-modulated dropcasting of chiral l- and d-perylene diimide (PDI) monomeric building blocks, two types of aggregate morphologies, nanofibers and nanodonuts, may be realized. Spin-diode behavior is evidenced in the nanodonut structures. Stacked PDI units, which form the conjugated core of these nanostructures, dominate the nanodonut–Au electrode contact; in contrast, the AFM tip contacts largely the high-resistance solubilizing alkyl chains of the chiral monomers that form these nanodonuts. Current–voltage responses of the nanodonuts, measured by magnetic conductive AFM (mC-AFM), demonstrate substantial spin polarizations as well as spin current rectification ratios (>10) that exceed the magnitudes of those determined to date for other chiral nanoscale systems. Furthermore, these results underscore the potential for chiral nanostructures, featuring asymmetric molecular junctions, to enable CISS-based nanoscale spin current rectifiers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

A cryogenic near-field thermal diode leveraging superconducting phase transitions

Control of charge and heat transport is essential for computing and thermal management technologies. Recent work with superconducting materials has shown rectified electrical supercurrents near liquid helium temperatures. However, despite large theoretical interest and expected impact on quantum technologies, no experiments have demonstrated control of nanoscale radiative heat currents at cryogenic temperatures. Here we study photon-mediated thermal transport in nanogaps between niobium and gold. Using novel scanning calorimetric probes and nanofabricated devices, we reveal a ~20-fold suppression of radiative heat transport, when niobium transitions from the metallic to the superconducting state. Taking advantage of this effect, we also demonstrate a niobium-based cryogenic thermal diode with a heat rectification ratio of 70%. As a result, the experimental techniques and advances presented here will enable studying nanoscale thermal transport in quantum materials and advancing thermal management of superconducting devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Vertical van der Waals heterojunction diodes comprising 2D semiconductors on 3D β-Ga 2 O 3

Wide bandgap semiconductors such as gallium oxide (Ga 2 O 3 ) have attracted much attention for their use in next-generation high-power electronics. Although single-crystal Ga 2 O 3 substrates can be routinely grown from melt along various orientations, the influence of such orientations has been seldom reported. Further, making rectifying p–n diodes from Ga 2 O 3 has been difficult due to lack of p-type doping. In this study, we fabricated and optimized 2D/3D vertical diodes on β-Ga 2 O 3 by varying the following three factors: substrate planar orientation, choice of 2D material and metal contacts. Furthermore, the quality of our devices was validated using high-temperature dependent measurements, atomic-force microscopy (AFM) techniques and technology computer-aided design (TCAD) simulations. Our findings suggest that 2D/3D β-Ga 2 O 3 vertical heterojunctions are optimized by substrate planar orientation (–201), combined with 2D WS 2 exfoliated layers and Ti contacts, and show record rectification ratios (>10 6 ) concurrently with ON-Current density (>10 3 A cm –2 ) for application in power rectifiers.

36 MATERIALS SCIENCE↗
DOE OSTI2026

High-performance nanodevices based on WGe 2⁢ N 4 monolayer

Two-dimensional (2D) 𝑀⁢𝐴 2 ⁢𝑍 4 -family monolayers (MLs) have emerged as promising semiconductors due to their element tunability and rich electronic and optoelectronic properties. In this work, using first-principles calculations, we investigate the electronic, mechanical, transport, and optoelectronic properties of WGe 2⁢ N 4 ML with a small indirect bandgap. Various nanodevices based on WGe 2 ⁢N 4 ML are studied, including pn-junction diodes, pin-junction field-effect transistors (FETs), and phototransistors. The present results reveal that the WGe 2⁢ N 4 ML exhibits high rigidity, thermal stability, and remarkable light absorption. These nanodevices demonstrate excellent performance: (1) the pn-junction diode shows a high rectification ratio and a near-Shockley-limit ideality factor, (2) the pin-junction FET exhibits significant gate voltage modulation capability with subthreshold swing as low as 71 mV/dec (close to the theoretical limit calculated based on the Boltzmann distribution), and (3) the phototransistor displays strong optoelectronic responses in the visible and ultraviolet regions. Furthermore, these findings establish WGe 2 ⁢N 4 ML as a versatile platform for developing high-performance, multifunctional nanoelectronic and optoelectronic devices, significantly expanding the application potential of 𝑀⁢𝐴 2⁢ 𝑍 4 -family materials.

2-dimensional systems↗
NASA NTRS2000

A Factorial Data Rate and Dwell Time Experiment in the National Transonic Facility

This report is an introductory tutorial on the application of formal experiment design methods to wind tunnel testing, for the benefit of aeronautical engineers with little formal experiment design training. It also describes the results of a Study to determine whether increases in the sample rate and dwell time of the National Transonic Facility data system Would result in significant changes in force and moment data. Increases in sample rate from 10 samples per second to 50 samples per second were examined, as were changes in dwell time from one second per data point to two seconds. These changes were examined for a representative aircraft model in a range of tunnel operating conditions defined by angles of attack from 0 deg to 3.8 degrees, total pressure from 15.0 psi to 24.1 psi, and Mach numbers from 0.52 to 0.82. No statistically significant effect was associated with the change in sample rate. The change in dwell time from one second to two seconds affected axial force measurements, and to a lesser degree normal force measurements. This dwell effect comprises a "rectification error" caused by incomplete cancellation of the positive and negative elements of certain low frequency dynamic components that are not rejected by the one-Hz low-pass filters of the data system. These low frequency effects may be due to tunnel circuit phenomena and other sources. The magnitude of the dwell effect depends on dynamic pressure, with angle of attack and Mach number influencing the strength of this dependence. An analysis is presented which suggests that the magnitude of the rectification error depends on the ratio of measurement dwell time to the period of the low-frequency dynamics, as well as the amplitude of the dynamics The essential conclusion of this analysis is that extending the dwell time (or, equivalently, replicating short-dwell data points) reduces the rectification error.

DeLoach, R.↗
DOE OSTI2023

Ultrawide bandgap vertical β-(Al x Ga1 −x )2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Ultrawide bandgap β-(AlxGa1−x)2O3 vertical Schottky barrier diodes on (010) β-Ga2O3 substrates are demonstrated. The β-(AlxGa1−x)2O3 epilayer has an Al composition of 21% and a nominal Si doping of 2 × 1017 cm−3 grown by molecular beam epitaxy. Pt/Ti/Au has been employed as the top Schottky contact, whereas Ti/Au has been utilized as the bottom Ohmic contact. The fabricated devices show excellent rectification with a high on/off ratio of ∼109, a turn-on voltage of 1.5 V, and an on-resistance of 3.4 mΩ cm2. Temperature-dependent forward current-voltage characteristics show effective Schottky barrier height varied from 0.91 to 1.18 eV while the ideality factor from 1.8 to 1.1 with increasing temperatures, which is ascribed to the inhomogeneity of the metal/semiconductor interface. The Schottky barrier height was considered a Gaussian distribution of potential, where the extracted mean barrier height and a standard deviation at zero bias were 1.81 and 0.18 eV, respectively. A comprehensive analysis of the device leakage was performed to identify possible leakage mechanisms by studying temperature-dependent reverse current-voltage characteristics. At reverse bias, due to the large Schottky barrier height, the contributions from thermionic emission and thermionic field emission are negligible. By fitting reverse leakage currents at different temperatures, it was identified that Poole–Frenkel emission and trap-assisted tunneling are the main leakage mechanisms at high- and low-temperature regimes, respectively. Electrons can tunnel through the Schottky barrier assisted by traps at low temperatures, while they can escape these traps at high temperatures and be transported under high electric fields. This work can serve as an important reference for the future development of ultrawide bandgap β-(AlxGa1−x)2O3 power electronics, RF electronics, and ultraviolet photonics.

Materials Science↗
NASA NTRS1981

Apparatus for damping operator induced oscillations of a controlled system

Flight control-related apparatus for damping operator induced oscillations of a controlled system responding to an operator controlled signal is described. The device utilizes a lag-lead filter for frequency and amplitude estimation of the control input, and a rectification and smoothing filter for producing a signal proportional to the absolute value of the frequency and amplitude estimate for use in suppression of the control system output signal. In one embodiment, this is accomplished by computing a correction signal in a correction generating section. In a second embodiment, a second rectification and smoothing filter produces a signal proportional to the absolute value of the controlled input signal. A ratio of the outputs of the first and second rectification and smoothing filters is then used in a generator to generate a gain factor k sub q for the control system to reduce the gain of the output signal of the control system, thereby to provide a damped control output signal without rate limiting the controlled element.

Edwards, J. W.↗
DOE OSTI2024

Flash healing of laser-induced graphene

The advancement of laser-induced graphene (LIG) technology has streamlined the fabrications of flexible graphene devices. However, the ultrafast kinetics triggered by laser irradiation generates intrinsic amorphous characteristics, leading to high resistivity and compromised performance in electronic devices. Healing graphene defects in specific patterns is technologically challenging by conventional methods. Herein, we report the rapid rectification of LIG’s topological defects by flash Joule heating in milliseconds (referred to as F-LIG), whilst preserving its overall structure and porosity. The F-LIG exhibits a decreased I D /I G ratio from 0.84 – 0.33 and increased crystalline domain from Raman analysis, coupled with a 5-fold surge in conductivity. Pair distribution function and atomic-resolution imaging delineate a broader-range order of F-LIG with a shorter C-C bond of 1.425 Å. The improved crystallinity and conductivity of F-LIG with excellent flexibility enables its utilization in high-performance soft electronics and low-voltage disinfections. Notably, our F-LIG/polydimethylsiloxane strain sensor exhibits a gauge factor of 129.3 within 10% strain, which outperforms pristine LIG by 800%, showcasing significant potential for human-machine interfaces.

36 MATERIALS SCIENCE↗
NASA NTRS1982

Radar image processing for rock-type discrimination

Image processing and enhancement techniques for improving the geologic utility of digital satellite radar images are reviewed. Preprocessing techniques such as mean and variance correction on a range or azimuth line by line basis to provide uniformly illuminated swaths, median value filtering for four-look imagery to eliminate speckle, and geometric rectification using a priori elevation data. Examples are presented of application of preprocessing methods to Seasat and Landsat data, and Seasat SAR imagery was coregistered with Landsat imagery to form composite scenes. A polynomial was developed to distort the radar picture to fit the Landsat image of a 90 x 90 km sq grid, using Landsat color ratios with Seasat intensities. Subsequent linear discrimination analysis was employed to discriminate rock types from known areas. Seasat additions to the Landsat data improved rock identification by 7%.

Blom, R. G.↗
DOE OSTI2024

Stripe and bubble ratchets on asymmetric substrates

We show that various nonmonotonic ratchet effects can arise when mesophase pattern-forming systems, which exhibit anisotropic crystal, stripe, and bubble regimes, are coupled to one-dimensional asymmetric substrates under ac driving. The patterns emerge in the absence of a substrate when the ratio of attraction to repulsion is varied for particles with competing short-range attraction and long-range repulsion potentials. In the presence of the substrate, we find that the ratchet efficiency varies nonmonotonically with increasing attraction, depending upon how well the mesophase morphology matches the substrate spacing and periodicity. For strong repulsion, there is a weak but finite ratchet effect, while at intermediate attraction, there is a robust ratchet effect in which the system forms stripes aligned with the substrate symmetry direction. For strong attraction, large bubbles appear that have weak or no ratchet effects when the bubble width exceeds the substrate lattice spacing, causing the bubble to be only weakly coupled to the substrate. For very strong attraction, small bubbles form and undergo a strong ratchet effect with an efficiency that oscillates as a function of ac drive amplitude. Although the small bubble regime is a strongly correlated regime in which each bubble contains many particles, the system behaves as if it is in a single-particle regime since the bubble width is much smaller than the substrate lattice spacing. We map out the different rectification phases as a function of the pattern morphology, substrate strength, and ac drive amplitude. The pronounced ratchet effects that we observe in some regimes can be exploited for pattern sorting in hard and soft matter systems. Published by the American Physical Society 2024

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2000

Applications of Fractal Analytical Techniques in the Estimation of Operational Scale

The observational scale and the resolution of remotely sensed imagery are essential considerations in the interpretation process. Many atmospheric, hydrologic, and other natural and human-influenced spatial phenomena are inherently scale dependent and are governed by different physical processes at different spatial domains. This spatial and operational heterogeneity constrains the ability to compare interpretations of phenomena and processes observed in higher spatial resolution imagery to similar interpretations obtained from lower resolution imagery. This is a particularly acute problem, since longterm global change investigations will require high spatial resolution Earth Observing System (EOS), Landsat 7, or commercial satellite data to be combined with lower resolution imagery from older sensors such as Landsat TM and MSS. Fractal analysis is a useful technique for identifying the effects of scale changes on remotely sensed imagery. The fractal dimension of an image is a non-integer value between two and three which indicates the degree of complexity in the texture and shapes depicted in the image. A true fractal surface exhibits self-similarity, a property of curves or surfaces where each part is indistinguishable from the whole, or where the form of the curve or surface is invariant with respect to scale. Theoretically, if the digital numbers of a remotely sensed image resemble an ideal fractal surface, then due to the self-similarity property, the fractal dimension of the image will not vary with scale and resolution, and the slope of the fractal dimension-resolution relationship would be zero. Most geographical phenomena, however, are not self-similar at all scales, but they can be modeled by a stochastic fractal in which the scaling properties of the image exhibit patterns that can be described by statistics such as area-perimeter ratios and autocovariances. Stochastic fractal sets relax the self-similarity assumption and measure many scales and resolutions to represent the varying form of a phenomenon as the pixel size is increased in a convolution process. We have observed that for images of homogeneous land covers, the fractal dimension varies linearly with changes in resolution or pixel size over the range of past, current, and planned space-borne sensors. This relationship differs significantly in images of agricultural, urban, and forest land covers, with urban areas retaining the same level of complexity, forested areas growing smoother, and agricultural areas growing more complex as small pixels are aggregated into larger, mixed pixels. Images of scenes having a mixture of land covers have fractal dimensions that exhibit a non-linear, complex relationship to pixel size. Measuring the fractal dimension of a difference image derived from two images of the same area obtained on different dates showed that the fractal dimension increased steadily, then exhibited a sharp decrease at increasing levels of pixel aggregation. This breakpoint of the fractal dimension/resolution plot is related to the spatial domain or operational scale of the phenomenon exhibiting the predominant visible difference between the two images (in this case, mountain snow cover). The degree to which an image departs from a theoretical ideal fractal surface provides clues as to how much information is altered or lost in the processes of rescaling and rectification. The measured fractal dimension of complex, composite land covers such as urban areas also provides a useful textural index that can assist image classification of complex scenes.

Emerson, Charles W.↗