Search NASA⌕ Search

SEARCH · Search NASA

Results for “selective doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Spin-orbit coupling driven orbital-selective doping effect in Sr 2 Ru 1 - x Ir x O 4

Orbital-selective phenomena in mutliorbital systems have received much attention due to their uniqueness as well as possible connections to other phenomena. As orbital-selectiveness is mostly related to the crystal structure, finding a new control parameter other than structure would be of significant importance. Here in this paper we report discovery of an orbital-selective doping effect in Sr 2 Ru 1 - x Ir x O 4 (SRIO). Our systematic electronic structure study of SRIO reveals an anomalous orbital-selective doping effect and concomitant Lifshitz transitions (LTs) in the γ band. With the help of a tight-binding calculation, we find that the orbital-selective doping effect is due to variation in the spin-orbit coupling (SOC) strength. Our findings not only elucidate the mechanism of LTs in the γ band in SRIO but may also open new avenues for novel SOC-controlled orbital-selective phenomena.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Site-Selective Doping and Oxidation State Control of Copper in Gold Nanorods

We report the synthesis of plasmonic gold–copper nanostructures with tunable copper spatial distribution and oxidation state. Au–Cu alloy shells were deposited in aqueous solution onto colloidal gold nanorods that functioned as seeds, and the resulting shell morphology was found to depend strongly on the nanorod aspect ratio. For relatively fat gold nanorods (16 x 31 nm), Au–Cu growth was preferentially localized near the rod midsections, forming belt-like structures, whereas for skinnier nanorods (9 x 32 nm), Au–Cu growth produced patchy surface coverage around the entire rod. The shell thickness was tuned from 1 to 4 nm; upon air exposure, thicker shells exhibited a higher Cu(I) fraction compared to the initial shell. Incorporation of the Au–Cu shell led to pronounced shifts in the plasmonic features of the gold nanorods. These tunable plasmonic Au–Cu nanorods provide a materials basis for Cu-based plasmonic materials in the context of electrochemical CO₂ reduction.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1980

Scratch encourages selective doping

Dislocations induced by scratching produce deep narrow spikes of zinc diffused in gallium arsenide. Density of defects formed locally increases zinc diffusion coefficient. Enhancements by factor of 6 have been observed. Technique works for other dopants than zinc and for other semiconductors besides GaAs.

Hawrylo, F. Z.↗
DOE OSTI2023

Selective area doping of GaN toward high-power applications

Abstract Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

Physics↗
DOE OSTI2022

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2018

Selective nitrogen doping of graphene oxide by laser irradiation for enhanced hydrogen evolution activity

Selective nitrogen-doping of graphene oxide with a high pyridinic N ratio (51%; L-GO) was achieved here by laser irradiation of graphene oxide with ammonia. The resulting L-GO exhibited enhanced electrocatalytic properties; specifically, the overpotential of the hydrogen evolution reaction (HER) was improved by over 400 mV at 10 mA cm -2 compared to the pristine graphene oxide.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Selective area doping for Mott neuromorphic electronics

The cointegration of artificial neuronal and synaptic devices with homotypic materials and structures can greatly simplify the fabrication of neuromorphic hardware. We demonstrate experimental realization of vanadium dioxide (VO 2 ) artificial neurons and synapses on the same substrate through selective area carrier doping. By locally configuring pairs of catalytic and inert electrodes that enable nanoscale control over carrier density, volatility or nonvolatility can be appropriately assigned to each two-terminal Mott memory device per lithographic design, and both neuron- and synapse-like devices are successfully integrated on a single chip. Feedforward excitation and inhibition neural motifs are demonstrated at hardware level, followed by simulation of network-level handwritten digit and fashion product recognition tasks with experimental characteristics. Spatially selective electron doping opens up previously unidentified avenues for integration of emerging correlated semiconductors in electronic device technologies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

High-voltage regrown nonpolar m -plane vertical p-n diodes: A step toward future selective-area-doped power switches

Here, we report high-voltage regrown nonpolar m-plane p-n diodes on freestanding GaN substrates. Secondary-ion mass spectroscopy (SIMS) measurements indicate O and Si spikes at the regrowth interfaces with maximum concentration ~ 5×10 17 cm -3 , which is similar to previously published c-plane studies. A high blocking voltage of 540 V at ~ 1 mA/cm2 (corresponding to an electric field of E ~ 3.35 MV/cm), turn-on voltages between 2.9-3.1 V, specific on-resistance of 1.7 mΩ.cm 2 at 300 A/cm 2 , and a minimum ideality factor of 1.7 were obtained for the regrown diodes. Our results suggest that Si, O and C interfacial impurity levels up to 2×10 17 cm -3 , 8×10 17 cm -3 , and 1×10 19 cm -3 , respectively, at the metallurgical junction of m-plane p-n diodes do not result in very early breakdown in the reverse bias, although the off-state leakage current in forward bias is affected. The impact of growth interruption/regrowth on diode performance is also investigated.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Reaction of BCl 3 with H- and Cl-terminated Si(100) as a pathway for selective, monolayer doping through wet chemistry

The reaction of boron trichloride with the H and Cl-terminated Si(100) surfaces was investigated to understand the interaction of this molecule with the surface for designing wet-chemistry based silicon surface doping processes using a carbon- and oxygen-free precursor. The process was followed with X-ray photoelectron spectroscopy (XPS). Within the reaction conditions investigated, the reaction is highly effective on Cl-Si(100) for temperatures below 70°C, at which point both surfaces react with BCl$_3$. The XPS investigation followed the formation of a B 1s peak at 193.5 eV corresponding to (B-O)$_x$ species. Even the briefest exposure to ambient conditions lead to hydroxylation of surface borochloride species. However, the Si 2p signature at 102 eV allowed for a confirmation of the formation of a direct Si-B bond. Density functional theory was utilized to supplement the analysis and identify possible major surface species resulting from these reactions. This work provides a new pathway to obtain a functionalized silicon surface with a direct Si-B bond that can potentially be exploited as a means of selective, ultra-shallow, and supersaturated doping.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1984

Engineering and design properties of thallium-doped sodium iodide and selected properties of sodium-doped cesium iodide

Mechanical and thermal properties, not available in the literature but necessary to structural design, using thallium doped sodium iodide and sodium doped cesium iodide were determined to be coefficient of linear thermal expansion, thermal conductivity, thermal shock resistance, heat capacity, elastic constants, ultimate strengths, creep, hardness, susceptibility to subcritical crack growth, and ingot variation of strength. These properties were measured for single and polycrystalline materials at room temperature.

Forrest, K.↗
NASA NTRS2007

Conversion of type of quantum well structure

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Ning, Cun-Zheng↗
NASA NTRS2007

Conversion of Type of Quantum Well Structure

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Ning, Cun-Zheng↗
DOE OSTI2025

Effects of chemical disorder and spin-orbit coupling on the electronic-structure and Fermi-surface topology of YbSb-based monopnictides

Here, in this work, we study the influence of disorder on the electronic structure of YbSb—a rare-earth monopnictide featuring a simple rocksalt (B1) crystal structure and a well-defined Fermi-surface topology—by employing first-principles density-functional theory. We focus on chemical disorder introduced through Te and Al doping, selected based on their thermodynamic stability in alloyed configurations, to understand how such perturbations modify the electronic states of YbSb. Our results indicate that Te doping predominantly introduces electronlike states at the 𝑋 and 𝐿 points, while Al doping leads to a suppression of holelike states at Γ, effectively driving the system from a semimetallic state to one characterized by very narrow-gap behavior at Γ. This modulation of the Fermi surface, particularly the reduction of central hole pockets at Γ, plays a central role in altering interpocket scattering—a mechanism critical for tuning quantum transport properties, including superconductivity. This disorder-driven modulation of the Fermi surface, particularly the suppression of central hole pockets at Γ, controls interpocket scattering, which is essential for optimizing quantum transport properties, including superconductivity. Our results show that disorder can be effectively used for engineering band topology, thereby tuning quantum related response through a tailored electronic structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Selective thermal neutron transmutation doping with Gd masks in GaN semiconductors

For the first time, selective neutron transmutation doping was successfully performed on GaN through Gd masks, showing the feasibility of patternable doping through neutron irradiations. In collaborating with Oak Ridge National Laboratory, GaN with Gd masks was irradiated by directional neutrons. By using the Gd properties with high neutron absorption cross-sections, it was confirmed that the area covered by Gd masks on GaN was completely shielded from neutrons, and the uncovered area was doped with the generated Ge and 14 C. Property differences were clearly identified in various ways when comparing the area exposed by neutrons and the area unexposed by neutrons. The discoloration by the ejected protons and elastic scattering of neutrons appeared only in the exposed area while the unexposed area remained the same as before irradiation. The aspect ratio of the patterned profile of GaN was estimated by comparing patterns on the front and backside. From energy dispersive X-ray spectroscopy spectra and secondary ion mass spectrometry measurement, the concentration difference between Ge and 14 C as well as the exact concentration of produced 14 C was also checked. Further, Schottky barrier diodes on the selectively doped GaN were fabricated and investigated to study the electrical properties.

42 ENGINEERING↗
NASA NTRS2015

A Faster Triphosphorylation Ribozyme

In support of the RNA world hypothesis, previous studies identified trimetaphosphate (Tmp) as a plausible energy source for RNA world organisms. In one of these studies, catalytic RNAs (ribozymes) that catalyze the triphosphorylation of RNA 5'-hydroxyl groups using Tmp were obtained by in vitro selection. One ribozyme (TPR1) was analyzed in more detail. TPR1 catalyzes the triphosphorylation reaction to a rate of 0.013 min -1 under selection conditions (50 mM Tmp, 100 mM MgCl 2 , 22°C). To identify a triphosphorylation ribozyme that catalyzes faster triphosphorylation, and possibly learn about its secondary structure TPR1 was subjected to a doped selection. The resulting ribozyme, TPR1e, contains seven mutations relative to TPR1, displays a previously unidentified duplex that constrains the ribozyme's structure, and reacts at a 24-fold faster rate than the parent ribozyme. Under optimal conditions (150 mM Tmp, 650 mM MgCl 2 , 40°C), the triphosphorylation rate of TRP1e reaches 6.8 min -1 .

Gregory F. Dolan↗